Abstract: Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a BOW value of ?2.0 to 2.0 ?m, as measured with the back surface of the indium phosphide substrate facing upward.

Abstract: Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a WARP value of 3.5 ?m or less, as measured with the back surface of the indium phosphide substrate facing upward.

Abstract: A method for processing ores containing gold or refining intermediates containing gold, the refining intermediate being obtained by subjecting the ores to a refining process, wherein the method includes: a leaching step of leaching gold from the ores or the refining intermediates using a sulfate solution containing iodide ions and iron (III) ions as a leaching solution; an adsorption step of adsorbing iodine and gold in the leached solution obtained in the leaching step on activated carbon; and an iodine separation step of separating iodine from the activated carbon while leaving gold on the activated carbon that has undergone the adsorption step.

Abstract: A method for recovering lithium according to this invention comprises separating sodium from a lithium-containing solution containing lithium ions and sodium ions to recover lithium, wherein the method comprises a solvent extraction step including: at least three-stage extraction process having a first extraction process, a second extraction process, and a third extraction process; and a lithium back extraction stage of back extracting the lithium ions from a solvent that have undergone the at least three-stage extraction process; and wherein, in the extraction process, the solvent undergoes the first extraction process, the second extraction process, and the third extraction process in this order, and a solution as the lithium-containing solution undergoes the respective processes in opposite order to the order of the solvent.

Abstract: A polycrystalline YAG sintered body, wherein, when dimensions of a smallest rectangular solid surrounding a YAG sintered body are A mm×B mm×C mm, a maximum value (A, B, C) is 150 mm or less, a minimum value (A, B, C) is more than 20 mm and 40 mm or less, and an optical loss coefficient when light of a wavelength of 300 to 1500 nm (excluding wavelengths which result in absorption of light by an additive element) is transmitted therethrough is 0.002 cm?1 or less. Moreover, a polycrystalline YAG sintered body, wherein, when dimensions of a smallest rectangular solid surrounding a YAG sintered body are A mm×B mm×C mm, a maximum value (A, B, C) is more than 150 mm and 300 mm or less, a minimum value (A, B, C) is more than 5 mm and 40 mm or less, and an optical loss coefficient when light of a wavelength of 300 to 1500 nm (excluding wavelengths which result in absorption of light by an additive element) is transmitted therethrough is 0.002 cm?1 or less.

Abstract: Provided are high purity tungsten pentachloride, and a method for obtaining such high purity tungsten pentachloride at a high yield and in an efficient manner. Tungsten pentachloride in which a total content of metal impurities excluding Sb, Ti, and As is less than 10 wtppm is obtained by uniformly mixing one or more types of reducing agents selected from Sb, Ti, and As and tungsten hexachloride at a molar ratio of 1.0:2.0 to 1.0:5.0 (reducing agent/WCl6 ratio) in an inert atmosphere to obtain a mixture, heating and reducing the mixture for 1 to 100 hours in a temperature range in which a chloride of tungsten and the reducing agent becomes a liquid phase to obtain a reduced product, heating the reduced product for 1 to 100 hours at 100 Pa or less and in a temperature range of 90 to 130° C.

Abstract: A sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the brazing material has a melting point of 200° C. or higher and a bonding strength of 0.16 kgf/cm2 or higher. An object is to provide a sputtering target-backing plate assembly in which a Si sputtering target is bonded to a backing plate by way of a brazing material, wherein the sputtering target-backing plate assembly has a high bonding strength and is free from separation even under high temperature sputtering conditions such as during high power sputtering.

Abstract: To provide a surface-treated copper foil that can favorably decrease the transmission loss even used in a high frequency circuit board, and has improved acid resistance. A surface-treated copper foil containing a copper foil, and a surface treatment layer containing a roughening treatment layer on at least one surface of the copper foil, wherein the surface treatment layer contains Ni, the surface treatment layer has a content ratio of Ni of 8% by mass or less (excluding 0% by mass), and an outermost surface of the surface treatment layer has a ten-point average roughness Rz of 1.4 ?m or less.

Abstract: Provided is a radiation detection element, including: a plurality of electrode portions on a surface of a substrate; and an insulating portion between the electrode portions, the substrate being made of a compound semiconductor crystal containing cadmium telluride or cadmium zinc telluride, wherein an intermediate layer containing tellurium oxide is present between each of the electrode portions and the substrate, and wherein the tellurium oxide layer has a thickness of 100 nm or less on a 500 nm inner side from an end portion of the insulating portion between the electrode portions. The radiation detection element has higher adhesion of the electrodes, and does not result in an element performance defect caused by insufficient insulation between the electrodes, even if the radiation detection element has a narrower distance between the electrode portions in order to obtain a high-definition radiographic image.

Abstract: A surface treated copper foil 1 includes a copper foil 2, and a first surface treatment layer 3 formed on one surface of the copper foil 2. The first surface treatment layer 3 of the surface treated copper foil 1 has a Ni concentration of 0.1 to 15.0 atm % based on the total amount of elements of C, N, O, Zn, Cr, Ni, Co, Si, and Cu, in an XPS depth profile obtained by performing sputtering at a sputtering rate of 2.5 nm/min (in terms of SiO2) for 1 minute. A copper clad laminate 10 includes the surface treated copper foil 1 and an insulating substrate 11 adhered to the first surface treatment layer 3 of the surface treated copper foil 1.

Abstract: Provided is an indium phosphide substrate which has suppressed sharpness of a wafer edge when polishing is carried out from the back surface of the wafer by a method such as back lapping. An indium phosphide substrate, wherein when planes A each parallel to a main surface are taken in a wafer, the phosphide substrate has an angle ? on the main surface side of 0°<??110° for all of the planes A where a distance from the main surface is 100 ?m or more and 200 ?m or less, wherein the angle ? is formed by a plane B, the plane B including an intersection line of an wafer edge with each of the planes A and being tangent to the wafer edge, and an plane of each of the planes A extending in a wafer outside direction, and wherein in a cross section orthogonal to the wafer edge, the indium phosphide substrate has an edge round at least on the main surface side, and the edge round on the main surface side has a radius of curvature Rf of from 200 to 350 ?m.

Abstract: Provided is a method for processing electronic and electrical device component scrap according to an embodiment of the present invention includes a smelting raw material sorting step of sorting a processing raw material containing valuable metals processable in a smelting step from the electronic and electrical device component scrap, wherein the method comprises removing lump copper wire scrap contained in the electronic and electrical device component scrap using a parallel link robot.

Abstract: Provided is a large diameter InP single crystal substrate having a diameter of 75 mm or more, which can achieve a high electrical activation rate of Zn over a main surface of the substrate even in a highly doped region having a Zn concentration of 5×1018 cm?3 or more; and a method for producing the same. An InP single crystal ingot is cooled such that a temperature difference of 200° C. is decreased for 2 to 7.5 minutes, while rotating the InP single crystal ingot at a rotation speed of 10 rpm or less, and the cooled InP single crystal ingot is cut into a thin plate, thereby allowing production of the InP single crystal substrate having an electrical activation rate of Zn of more than 85% over the main surface of the substrate even in a highly doped region having a Zn concentration of 5×1018 cm?3 or more.

Abstract: A surface treated copper foil 1 includes a copper foil 2, and a first surface treatment layer 3 formed on one surface of the copper foil 2. The first surface treatment layer 3 of the surface treated copper foil 1 has a Ni deposited amount of 20 to 200 ?g/dm2 and a Zn deposited amount of 20 to 1,000 ?g/dm2. A copper clad laminate 10 includes the surface treated copper foil 1 and an insulating substrate 11 adhered to the first surface treatment layer 3 of the surface treated copper foil 1.

Abstract: Provided is an indium phosphide substrate having good accuracy of flatness of the orientation flat, and a method for producing the indium phosphide substrate. An indium phosphide substrate having a main surface and an orientation flat, wherein a difference between maximum and minimum values of a maximum height Pz in each of four cross-sectional curves is less than or equal to 1.50/10000 of a length in a longitudinal direction of an orientation flat end face, wherein the four cross-sectional curves are set at intervals of one-fifth of a thickness of the substrate on a surface excluding a width portion of 3 mm inward from both ends of the orientation flat end face in the longitudinal direction of the orientation flat end face, and the maximum height Pz in each of the four cross-sectional curves is measured in accordance with JIS B 0601:2013.

Abstract: Provided is a stable CdZnTe monocrystalline substrate having a small leakage current even when a high voltage is applied and having a lower variation in resistivity with respect to variations in applied voltage values. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by mass or more and 5.0 ppm by mass or less, wherein the semiconductor wafer has a resistivity of 1.0×107 ?cm or more and 1.0×108 ?cm or less when a voltage of 900 V is applied, and wherein a ratio (variation ratio) of the resistivity at application of 0 V to the resistivity at application of a voltage of 900 V is 20% or less.

Abstract: Provided is a sorting machine capable of more easily and efficiently sorting specific parts having a specific shape from raw materials containing various substances having different shapes, and a method for treating electronic and electric device component scraps using the sorting machine. The sorting machine includes a conveying device 1 having a conveying surface 13 which conveys raw materials containing substances having different shapes from a raw material inlet 11 to a receiving port 12; and a gate device 2 provided with a cylindrical roll portion 21 having a rotating function arranged at a certain distance d on the conveying surface to allow at least a part of the raw materials 100 to pass through to the receiving port 12.

Abstract: Provided is an indium phosphide substrate having good linearity accuracy of a ridge line where the main surface is in contact with the orientation flat, and a method for producing the indium phosphide substrate. An indium phosphide substrate having a main surface and an orientation flat, wherein a maximum value of deviation is less than 1/1000 of a length of a ridge line where the main surface is in contact with the orientation flat, when a plurality of measurement points are set at intervals of 2 mm from a start point to an end point at the ridge line, except for a length portion of 3 mm inward from both ends of the ridge line, and based on a reference line which is a straight line connecting the start point and the end point, a distance of each measurement point from the reference line is defined as the deviation of each measurement point.

Abstract: Provided is a method for processing electronic and electrical device component scrap, which can improve an efficiency of sorting of raw materials fed to the smelting step from electronic and electrical device component scrap, and reduce losses of valuable metals. A method for processing electronic and electrical device component scrap which includes sorting electronic and electrical device component scrap by wind powder sorting to remove plate-shaped materials containing valuable metals included in the electronic and electrical device component scrap, and then sorting the resulting sorted objects by magnetic sorting.

Abstract: Provided is a method for processing electronic and electrical device component scrap, which can improve an efficiency of sorting of raw materials fed to the smelting step from electronic and electrical device component scrap, and reduce losses of valuable metals. A method for processing electronic and electrical device component scrap which includes removing powdery objects contained in electronic and electrical device component scrap prior to a step of separating non-metal objects or metal objects from the electronic and electrical device component scrap containing the metal objects and the non-metal objects, using a metal sorter including: a metal sensor, a color camera, an air valve, and a conveyor.