Abstract: Provided is a method for processing electronic and electrical device component scraps, which can selectively recover a substrate scrap including a substance intended to be recovered. A method for processing electronic and electrical device component scraps, including separating a substrate with lead wires contained in the electronic and electrical device component scraps before sorting the electronic and electrical device component scraps by magnetic sorting.

Abstract: A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.

Abstract: In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal.

Abstract: Provided is a CdZnTe monocrystalline substrate which has a small leakage current even when a voltage is applied from a low voltage to a high voltage, and which has a lower variation in resistivity with respect to applied voltage changes from 0 to 900 V, and which can maintain a stable resistivity. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by weight or more and 5.0 ppm by weight or less, wherein when a voltage is applied in a range of from 0 to 900 V, the semiconductor wafer has a resistivity for each applied voltage value of 1.0×107 ?cm or more and 7.0×108 ?cm or less, and wherein a relative variation coefficient of each resistivity to the applied voltages in a range of from 0 to 900 V is 100% or less.

Abstract: A surface treated copper foil 1 includes a copper foil 2, and a first surface treatment layer 3 formed on one surface of the copper foil 2. The first surface treatment layer 3 of the surface treated copper foil 1 has a root mean square gradient of roughness curve elements R?q according to JIS B0601:2013 of 5 to 28°. A copper clad laminate 10 includes the surface treated copper foil 1 and an insulating substrate 11 adhered to the first surface treatment layer 3 of the surface treated copper foil 1.

Abstract: A surface treated copper foil 1 includes a copper foil 2, and a first surface treatment layer 3 formed on one surface of the copper foil 2. The first surface treatment layer 3 of the surface treated copper foil 1 has L* of a CIE L*a*b* color space of 44.0 to 84.0. A copper clad laminate 10 includes the surface treated copper foil 1 and an insulating substrate 11 adhered to a surface of the surface treated copper foil 1 opposite to the first surface treatment layer 3.

Abstract: A method for recovering at least cobalt of valuable metals, cobalt and nickel, from an acidic solution obtained by subjecting waste containing positive electrode materials for lithium ion secondary batteries to a wet process, the acidic solution comprising cobalt ions, nickel ions and impurities, the method including: a first extraction step for Co recovery, the first extraction step being for extracting cobalt ions by solvent extraction from the acidic solution and stripping the cobalt ions; and a second extraction step for Co recovery, the second extraction step being for extracting cobalt ions by solvent extraction from a stripped solution obtained in the first extraction step for Co recovery and stripping the cobalt ions, wherein the first extraction step for Co recovery includes: a solvent extraction process for extracting cobalt ions in the acidic solution into a solvent; a scrubbing process for scrubbing the solvent that has extracted the cobalt ions; and a stripping process for stripping the cobalt io

Abstract: A sputtering target formed from a potassium sodium niobate sintered body to which a dopant has been added; as a dopant, the sputtering target includes one or more types among Li, Mg, Ca, Sr, Ba, Bi, Sb, V, In, Ta, Mo, W, Cr, Ti, Zr, Hf, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cu, Zn, Ag, Mn, Fe, Co, Ni, Al, Si, Ge, Sn, and Ga; and a variation coefficient of a dopant concentration in a plane of the sputtering target is 0.12 or less. In terms of suppressing the generation of particles, provided is a sputtering target which is formed from a sintered body that includes potassium sodium niobate and to which a dopant has been added.

Abstract: An object of the present invention is to recover a minor metal and/or rare-earth metal. The present invention provides a method for recovering a minor metal and/or rare-earth metal from a post-chlorination residue in titanium smelting. The minor metal and/or rare-earth metal is one or more metal selected from the group consisting of Sc, V, Nb, Zr, Y, La, Ce, Pr, and Nd.

Abstract: A method for recovering at least cobalt of valuable metals, cobalt and nickel, from an acidic solution obtained by subjecting waste containing positive electrode materials for lithium ion secondary batteries to a wet process, the acidic solution comprising cobalt ions, nickel ions and impurities, wherein the method includes: a first extraction step for Co recovery, the first extraction step being for extracting cobalt ions by solvent extraction from the acidic solution and stripping the cobalt ions; an electrolytic step for Co recovery, the electrolytic step being for providing electrolytic cobalt by electrolysis using a stripped solution obtained in the first extraction step for Co recovery as an electrolytic solution; a dissolution step for Co recovery, the dissolution step being for dissolving the electrolytic cobalt in an acid; and a second extraction step for Co recovery, the second extraction step being for extracting cobalt ions by solvent extraction from a cobalt dissolved solution obtained in the dis

Abstract: A metal powder in which a coating made of one or more types of elements selected from Gd, Ho, Lu, Mo, Nb, Os, Re, Ru, Tb, Tc, Th, Tm, U, V, W, Y, Zr, Cr, Rh, Hf, La, Ce, Pr, Nd, Pm, Sm and Ti is formed on a surface of a copper or copper alloy powder, wherein a thickness of the coating is 5 nm or more and 500 nm or less. A metal powder for metal additive manufacturing based on the laser method which can be efficiently melted with a laser while maintaining the high conductivity of copper or copper alloy, and a molded object produced by using such metal powder are provided.

Abstract: Providing a method for selecting minerals containing arsenic. A peptide comprising an amino acids sequence according to the following formula: (T, S, N, or Q)-(H, P, or W)-(E, or D)-(H, P, W, R, or K)-(L, I, V, F, or A)-(L, I, V, F, or A)-(L, I, V, F, or A)-(T, S, N, or Q)-(H, P, or W)-(L, I, V, F, or A)-(T, S, N, or Q)-(L, I, V, F, or A) wherein one amino acid is respectively selected from each group defined by paired parentheses.

Abstract: Provided is an electromagnetic wave shielding material that can exhibit improved electromagnetic wave shielding property, light-weight property and formability. The present invention relates to an electromagnetic wave shielding material comprising a laminate in which N number of metal foils each having a thickness of 5 to 100 ?m and N+1 number of resin layers each having a thickness of 5 ?m or more are alternately laminated or a laminate in which N+1 number of metal foils each having a thickness of 5 to 100 ?m and N number of resin layers each having a thickness of 5 ?m or more are alternately laminated, N being an integer of 2 or more, wherein thickness of the laminate is from 100 to 500 ?m, and wherein, when a thickness center of the laminate is used as a reference, for all pairs of interfaces at which sequences of the resin layers and the metal foils on both upper and lower sides of the reference correspond to each other, distances from the reference to the interfaces have an error of within ±10%.

Abstract: A semiconductor substrate has, on an Au electrode pad, an electrolessly-plated Ni film/an electrolessly-plated Pd film/an electrolessly-plated Au film or an electrolessly-plated Ni film/an electrolessly-plated Au film and a method of manufacturing the semiconductor substrate by the steps indicated in (1) to (6) below: (1) a degreasing step; (2) an etching step; (3) a pre-dipping step; (4) a Pd catalyst application step; (5) an electroless Ni plating step; (6) an electroless Pd plating step and electroless Au plating step or an electroless Au plating step.

Abstract: The present invention provides a rare earth thin film magnet having Nd, Fe, and B as essential components, wherein the rare earth thin film magnet has a texture in which an ?-Fe phase and a Nd2Fe14B phase are alternately arranged three-dimensionally, and each phase has an average crystal grain size of 10 to 30 nm. An object of this invention is to provide a rare earth thin film magnet having superior mass productivity and reproducibility and favorable magnetic properties, as well as to provide the production method thereof and a target for producing the thin film.

Abstract: A method for processing positive electrode active material waste of lithium ion secondary batteries, the waste containing cobalt, nickel, manganese and lithium, the method including: a carbon mixing step of mixing the positive electrode active material waste in the form of powder with carbon to obtain a mixture having a ratio of a mass of carbon to a total mass of the positive electrode active material waste and the carbon of from 10% to 30%; a roasting step of roasting the mixture at a temperature of from 600° C. to 800° C. to obtain roasted powder; a dissolution step including a first dissolution process of dissolving lithium in the roasted powder in water or a lithium-containing solution, and a second dissolution process of dissolving the lithium in a residue obtained in the first dissolution process in water; and an acid leaching step of leaching a residue obtained in the lithium dissolution step with an acid.

Abstract: A sputtering target according to this invention comprises an alloy of Al and Sc and contains from 25 at. % to 50 at. % of Sc. The sputtering target has an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less.

Abstract: A Cr:YAG sintered body including Al, Y, Cr, Ca, Mg, Si, and O, and component contents in the sintered body satisfying conditional expressions of 1) to 3) below, provided in the Conditional expression, each chemical symbol represents a component content (atppm). |(Y+Ca)/(Al+Cr+Si+Mg)?0.6|<0.001;??1) 0?(Ca+Mg)?(Cr+Si)?50 atppm; and??2) 50?Si?500 atppm??3) The embodiment of the present invention is to provide a Cr:YAG sintered body which exhibits high transparency and has a high Cr4+ conversion ratio, and its production method.

Abstract: Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula: Mg2Sn.Zna??Composition formula: in which, a is a Zn content of from 0.05 to 1 at % relative to Mg2Sn.

Abstract: Provided is an apparatus for analyzing composition of electronic and electrical device part scraps which can determine a composition of part scraps in the electronic and electrical device part scraps in a short time, a device for processing electronic and electrical device part scraps, and a method for processing electronic and electrical device part scraps using those devices.