Patents Assigned to JX Nippon Mining & Metals Corporation
  • Laminate of ceramic layer and sintered body of copper powder paste
    Patent number: 11056279
    Abstract: Provided is a laminate of a sintered body produced by sintering a copper powder paste and a ceramic substrate, which has improved adhesion between the sintered body and the ceramic substrate. A laminate with a copper powder paste sintered body laminated on a ceramic layer, the laminate comprising portions where one or more elements selected from Si, Ti and Zr derived from a copper powder surface treatment agent are together present with a thickness in a range of from 5 to 15 nm in boundaries between the copper powder paste sintered body and the ceramic layer, when observing the boundaries by scanning the laminate with STEM over 100 nm across the boundaries in a thickness direction of the laminate.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: July 6, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Hideki Furusawa
  • LINEAR OBJECT REMOVAL METHOD, LINEAR OBJECT REMOVAL DEVICE, AND ELECTRONIC/ELECTRIC APPARATUS COMPONENT SCRAP PROCESSING METHOD
    Publication number: 20210197229
    Abstract: Provided is a method for removing wire-form objects, a device for removing wire-form objects, and a method for processing electronic/electrical apparatus component waste, which can efficiently sort wire-form objects from sorting target objects having various shapes.
    Type: Application
    Filed: September 3, 2019
    Publication date: July 1, 2021
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Katsushi AOKI, Tsubasa TAKEDA
  • Tungsten silicide target and method of manufacturing same
    Patent number: 11046616
    Abstract: A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 ?m or more per 80000 mm2 on the sputtering surface.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: June 29, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Kunihiro Oda, Takayuki Asano
  • Laminated body and method of producing shaped article
    Patent number: 11040518
    Abstract: Provided is a laminated body of at least one metal foil and resin layers, which is suitable for drawing. The laminated body includes at least one metal foil and at least two resin layers. The laminated body has a thickness of 25 to 500 ?m. In the laminated body, both surfaces of each metal foil are closely laminated to the resin layers, and the relationships: 60??Y?150, and 1.4??b/?Y are satisfied, in which ?Y represents a nominal stress (MPa) at a nominal strain of 5% when a tensile test according to JIS K 7127: 1999 is performed on the laminated body, and ?b represents a nominal stress (MPa) at a nominal strain at which the metal foil in the laminated body is broken when a tensile test according to JIS K 7127: 1999 is performed on the laminated body.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: June 22, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Koichiro Tanaka
  • COPPER POWDER, METHOD FOR MANUFACTURING COPPER POWDER, AND METHOD FOR MANUFACTURING SOLID SHAPED OBJECT
    Publication number: 20210178465
    Abstract: The present invention provides a copper powder which is capable of fusion bonding with a low energy laser by enabling heat to be efficiently inputted with a high absorption rate for laser irradiation and has high convenience in handling, and provides a method for manufacturing the copper powder. One embodiment of the present invention is a copper powder, having an absorption rate for light having a wavelength ?=1060 nm of 18.9% to 65.0%, and an index, which is indicated by (the absorption rate for light having a wavelength ?=1060 nm)/(an oxygen concentration), of 3.0 or more.
    Type: Application
    Filed: January 12, 2018
    Publication date: June 17, 2021
    Applicant: JX Nippon Mining & Metals Corporation
    Inventors: Yosuke ENDO, Hiroyoshi YAMAMOTO, Ryo SUZUKI, Kenji SATO
  • SPUTTERING TARGET, MAGNETIC FILM AND METHOD FOR PRODUCING MAGNETIC FILM
    Publication number: 20210172055
    Abstract: Provided is a sputtering target that can form a magnetic film having both good magnetic separation between magnetic grains and high coercive force at the same time; a magnetic film; and a method for producing a magnetic film. The sputtering target according to the present invention comprises: 1 at. % or more of Zn, a part or all of Zn forming a complex oxide(s) of Zn—Ti—O and/or Zn—Si—O; and 45 at. % or less of Pt, the balance being Co and inevitable impurities, the atomic percentage being based on an atomic ratio.
    Type: Application
    Filed: September 11, 2018
    Publication date: June 10, 2021
    Applicant: JX Nippon Mining & Metals Corporation
    Inventors: Manami Masuda, Masayoshi Shimizu, Akira Shimojyuku
  • Copper alloy plate having excellent electrical conductivity and bending deflection coefficient
    Patent number: 11021774
    Abstract: There are provided a copper alloy plate having high strength, high electrical conductivity, a high bending deflection coefficient, and excellent stress relaxation characteristics, and an electronic component preferred for high current applications or heat dissipation applications. A copper alloy plate comprising 0.8 to 5.0% by mass of one or more of Ni and Co and 0.2 to 1.5% by mass of Si, with the balance being copper and an unavoidable impurity, having a tensile strength of 500 MPa or more, and having an A value of 0.5 or more, the A value being given by the following formula: A=2X(111)+X(220)?X(200) X(hkl)=I(hkl)/I0(hkl) wherein I(hkl) and I0(hkl) are diffraction integrated intensities of a (hkl) face obtained for a rolled face and a copper powder, respectively, using an X-ray diffraction method.
    Type: Grant
    Filed: April 9, 2014
    Date of Patent: June 1, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Takaaki Hatano
  • Electromagnetic wave shielding material
    Patent number: 11019759
    Abstract: Provided is an electromagnetic shielding material that has good magnetic field shielding properties against a low-frequency electromagnetic field of 1 MHz or less, lightweight and also excellent formability. The electromagnetic shielding material has a structure in which at least two metal foils are closely laminated via at least one resin layer, wherein at least one resin forming the at least one resin layer has no yield point at 150° C.; wherein all of combinations of the at least two metal foils and the at least one resin layer forming the electromagnetic shielding material satisfy the following equation (A): ?M×dM×dR?3×10?3,??Equation (A): wherein the electromagnetic shielding material satisfies the following equation (B): ? i a = 1 ? ( d Ra + f Ra ) ? j b = 1 ? ( d Mb + f Mb ) ? 0.
    Type: Grant
    Filed: December 1, 2016
    Date of Patent: May 25, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Koichiro Tanaka
  • Photodiode and photosensitive device
    Patent number: 11011664
    Abstract: Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg2Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: May 18, 2021
    Assignees: IBARAKI UNIVERSITY, JX NIPPON MINING & METALS CORPORATION
    Inventors: Haruhiko Udono, Toshiaki Asahi
  • Sputtering target
    Patent number: 10984992
    Abstract: A sputtering target comprising a flat part and a tapered part, wherein a machined groove for use in ignition is arranged on a sputtering surface of the target. With the sputtering target of the present invention, the ignition failure rate during ignition (plasma ignition) can be reduced, and the sputtering process can be started stably. It is thereby possible to shorten the downtime of the device, and consequently contribute to improved throughput and enhanced cost performance.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: April 20, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shuhei Murata, Yasuhiro Yamakoshi, Kotaro Nagatsu
  • LITHIUM RECOVERY METHOD
    Publication number: 20210108286
    Abstract: A method for recovering lithium from lithium ion battery scrap according to this invention comprises subjecting lithium ion battery scrap to a calcination step, a crushing step, and a sieving step sequentially carried out, wherein the method comprises, between the calcination step and the crushing step, between the crushing step and the sieving step, or after the sieving step, a lithium dissolution step of bringing the lithium ion battery scrap into contact with water and dissolving lithium contained in the lithium ion battery scrap in the water to obtain a lithium-dissolved solution; a lithium concentration step of solvent-extracting lithium ions contained in the lithium-dissolved solution and stripping them to concentrate the lithium ions to obtain a lithium concentrate; and a carbonation step of carbonating the lithium ions in the lithium concentrate to obtain lithium carbonate.
    Type: Application
    Filed: March 28, 2018
    Publication date: April 15, 2021
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Junichi ARAKAWA, Yasufumi HAGA, Junichi ITO
  • COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING SINGLE CRYSTAL OF COMPOUND SEMICONDUCTOR
    Publication number: 20210108335
    Abstract: Provided is a large diameter InP single crystal substrate having a diameter of 75 mm or more, which can achieve a high electrical activation rate of Zn over a main surface of the substrate even in a highly doped region having a Zn concentration of 5×1018 cm?3 or more; and a method for producing the same. An InP single crystal ingot is cooled such that a temperature difference of 200° C. is decreased for 2 to 7.5 minutes, while rotating the InP single crystal ingot at a rotation speed of 10 rpm or less, and the cooled InP single crystal ingot is cut into a thin plate, thereby allowing production of the InP single crystal substrate having an electrical activation rate of Zn of more than 85% over the main surface of the substrate even in a highly doped region having a Zn concentration of 5×1018 cm?3 or more.
    Type: Application
    Filed: November 9, 2017
    Publication date: April 15, 2021
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Akira NODA, Keita KAWAHIRA, Ryuichi HIRANO
  • COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING THE SAME
    Publication number: 20210111252
    Abstract: Provided is a cadmium zinc telluride (CdZnTe) single crystal including a main surface that has a high mobility lifetime product (?? product) in a wide range, wherein the main surface has an area of 100 mm2 or more and has 50% or more of regions where the ?? product is 1.0×10?3 cm2/V or more based on the entire main surface, and a method for effectively producing the same.
    Type: Application
    Filed: September 14, 2018
    Publication date: April 15, 2021
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Kohei YAMADA, Koji MURAKAMI, Kenya ITANI
  • LITHIUM RECOVERY METHOD
    Publication number: 20210108285
    Abstract: A method for recovering lithium according to this invention comprises separating sodium from a lithium-containing solution containing lithium ions and sodium ions to recover lithium, wherein the method comprises a solvent extraction step including: at least three-stage extraction process having a first extraction process, a second extraction process, and a third extraction process; and a lithium back extraction stage of back extracting the lithium ions from a solvent that have undergone the at least three-stage extraction process; and wherein, in the extraction process, the solvent undergoes the first extraction process, the second extraction process, and the third extraction process in this order, and a solution as the lithium-containing solution undergoes the respective processes in opposite order to the order of the solvent.
    Type: Application
    Filed: March 28, 2018
    Publication date: April 15, 2021
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventor: Junichi ARAKAWA
  • METHOD FOR PROCESSING ELECTRONIC AND ELECTRICAL DEVICE COMPONENT SCRAP
    Publication number: 20210107034
    Abstract: Provided is a method for processing electronic and electrical device component scrap, which can accurately and efficiently sort electronic and electrical device component scrap. The method for processing electronic and electrical device component scrap includes a separation step of separating non-metal objects 1b or metal objects 1a1, 1a2 from electronic and electrical device component scrap 1 containing the metal objects 1a1, 1a2 and the non-metal objects 1b using a sorter 10 comprising a metal sensor 2, a color camera 3, an air valve 4, and a conveyor 5, wherein a fixed distance is provided between the metal objects 1a1, 1a2 adjacent to each other so as to prevent the non-metal objects 1b between the metal objects 1a1, 1a2 from being erroneously detected, when detecting the metal objects 1a1, 1a2 in the electronic and electrical device component scrap 1 by the metal sensor 2.
    Type: Application
    Filed: March 18, 2019
    Publication date: April 15, 2021
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Katsushi AOKI, Tsubasa TAKEDA
  • Methods and compositions for refining molybdenum mineral
    Patent number: 10954531
    Abstract: Improved methods and compositions for refining molybdenum mineral are provided, in particular for isolating a substance containing molybdenum which comprises contacting the substance containing molybdenum with a composition comprising a M13 phage. The M13 phage provides selectivity and recovery of the substance containing molybdenum.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: March 23, 2021
    Assignees: SHIBAURA INSTITUTE OF TECHNOLOGY, JX NIPPON MINING & METALS CORPORATION
    Inventors: Mitsuo Yamashita, Akira Miura
  • Ruthenium sputtering target and ruthenium alloy sputtering target
    Patent number: 10943773
    Abstract: A ruthenium sputtering target, wherein a Si content is 10 to 100 wtppm, a total content of unavoidable impurities excluding gas components is 50 wtppm or less, and a remainder is Ru. By suppressing the crystal growth of ruthenium or a ruthenium alloy and reducing the generation of coarse crystal grains, arcing that occurs during sputtering is minimized, particle generation is reduced, and yield is improved.
    Type: Grant
    Filed: April 30, 2019
    Date of Patent: March 9, 2021
    Assignee: JX NIPPON MINING & METALS CORPORATION
    Inventor: Kentaro Harada
  • Fe—Pt based magnetic material sintered compact
    Patent number: 10937455
    Abstract: Provided is an Fe—Pt based magnetic material sintered compact, comprising BN and SiO2 as non-magnetic materials, wherein Si and O are present in a region where B or N is present at a cut surface of the sintered compact. A high density sputtering target is provided which enables production of a magnetic thin film for heat-assisted magnetic recording media, and also reduces the amount of particles generated during sputtering.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: March 2, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Shin-ichi Ogino
  • Surface treated copper foil, surface treated copper foil with resin layer, copper foil with carrier, laminate, method for manufacturing printed wiring board, and method for manufacturing electronic device
    Patent number: 10925170
    Abstract: The present invention provides a surface treated copper foil in which a dropping of the roughening particles from a roughening treatment layer provided on the surface of the copper foil is favorably suppressed and an occurrence of wrinkles or stripes when bonding with an insulating substrate is favorably suppressed.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: February 16, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Yuki Ori, Hideta Arai, Atsushi Miki, Ryo Fukuchi
  • Surface treated copper foil, surface treated copper foil with resin layer, copper foil with carrier, laminate, method for manufacturing printed wiring board, heat dissipation substrate, and method for manufacturing electronic device
    Patent number: 10925171
    Abstract: The present invention provides a surface treated copper foil in which a dropping of the roughening particles from a roughening treatment layer on the surface of the copper foil is suppressed and an occurrence of wrinkles or stripes when bonding with an insulating substrate is suppressed. The surface of the roughening treatment layer satisfies one or more of the following: a roughness Ra is 0.08 to 0.20 ?m, a roughness Rz is 1.00 to 2.00 ?m, a roughness Sq is 0.16 to 0.30 ?m, a roughness Ssk is ?0.6 to ?0.35, a roughness Sa is 0.12 to 0.23 ?m, a roughness Sz is 2.20 to 3.50 ?m, a roughness Sku is 3.75 to 4.50, and a roughness Spk is 0.13 to 0.27 ?m, a glossiness of a TD of the surface of the side of the roughening treatment layer of the surface treated copper foil is 70% or less.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: February 16, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Yuki Ori, Hideta Arai, Atsushi Miki, Ryo Fukuchi