Patents Assigned to JX Nippon Mining & Metals Corporation
  • Patent number: 9955583
    Abstract: The present invention provides a surface-treated copper foil capable of imparting the profile shape of the substrate surface after removal of the copper foil, the profile shape maintaining fine wiring formability and achieving satisfactory adhesion of electroless copper plating coating. The present invention also provides a resin substrate provided with a profile shape of the surface maintaining fine wiring formability and achieving satisfactory adhesion of electroless copper plating coating. The surface-treated copper foil of the present invention is a surface-treated copper foil having a surface-treated layer formed on a copper foil, and the surface roughness Sz of the surface of the surface-treated layer is 2 to 6 ?m.
    Type: Grant
    Filed: July 23, 2014
    Date of Patent: April 24, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Masafumi Ishii, Misato Honda, Nobuaki Miyamoto
  • Patent number: 9945026
    Abstract: A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe100-x—Ptx)100-A—CA (provided A is a number which satisfies 20?A?50 and X is a number which satisfies 35?X?55), wherein C grains are finely dispersed in an alloy, and the relative density is 90% or higher. The production of a magnetic thin film with granular structure is provided without using an expensive simultaneous sputtering device, and a high-density sputtering target capable of reducing the amount of particles generated during sputtering is provided.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: April 17, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Atsushi Sato, Shin-ichi Ogino
  • Publication number: 20180102446
    Abstract: In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal.
    Type: Application
    Filed: December 11, 2017
    Publication date: April 12, 2018
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Akira NODA, Masaru OTA, Ryuichi HIRANO
  • Publication number: 20180087166
    Abstract: Provided is a method for efficiently separating and recovering tungsten and other valuable(s) from at least one valuable containing tungsten. The present invention relates to a method for recovering at least one valuable containing tungsten, comprising subjecting a raw material mixture comprising at least one valuable containing tungsten to electrolysis using an electrolytic solution containing at least one alcohol amine to dissolve tungsten in the electrolytic solution, electrodeposit a part of the valuable(s) onto a cathode used for the electrolysis and separate at least one valuable other than the valuable(s) electrodeposited onto the cathode as a residue in the electrolytic solution, and then separating and recovering each of the residue and the valuable(s) electrodeposited onto the cathode.
    Type: Application
    Filed: March 30, 2016
    Publication date: March 29, 2018
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventor: Toshifumi KAWAMURA
  • Publication number: 20180087127
    Abstract: The present invention provides a method for removing copper from lithium ion battery scrap containing copper, comprising a leaching step of adding the lithium ion battery scrap to an acidic solution and leaching the lithium ion battery scrap under a condition that an aluminum solid is present in the acidic solution; and a copper separating step of separating copper contained in the acidic solution as a solid from the acidic solution, after the leaching step.
    Type: Application
    Filed: March 29, 2016
    Publication date: March 29, 2018
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Ken ADACHI, Junichi ARAKAWA, Junichi ITO
  • Patent number: 9930776
    Abstract: Provided is an ultrathin copper foil which has improved thickness accuracy of an ultrathin copper layer on a supporting copper foil. An ultrathin copper foil which is provided with a supporting copper foil, a releasing layer that is laminated on the supporting copper foil, and an ultrathin copper layer that is laminated on the releasing layer. The thickness accuracy of the ultrathin copper layer as determined by a weight thickness method is 3.0% or less.
    Type: Grant
    Filed: December 25, 2012
    Date of Patent: March 27, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Michiya Kohiki
  • Publication number: 20180080101
    Abstract: Provided is a method for efficiently producing tungsten from a raw material mixture comprising at least one valuable containing tungsten. The present invention relates to a method for producing tungsten, comprising the steps of subjecting a raw material mixture comprising at least one valuable containing tungsten to electrolysis using an organic electrolytic solution to dissolve tungsten in the electrolytic solution; and calcining the electrolytic solution containing dissolved tungsten at a temperature of less than 800° C. to obtain tungsten.
    Type: Application
    Filed: March 28, 2016
    Publication date: March 22, 2018
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventor: Toshifumi KAWAMURA
  • Publication number: 20180083325
    Abstract: The present invention provides a method for treating at least one lithium ion battery enclosed in a housing containing aluminum, comprising heating the lithium ion battery using a combustion furnace in which a combustion object is incinerated by flames, while preventing the flames from being directly applied to the housing of the lithium ion battery.
    Type: Application
    Filed: April 15, 2016
    Publication date: March 22, 2018
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Shojiro USUI, Nobuaki OKAJIMA
  • Patent number: 9922807
    Abstract: A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an average grain size of 3,000 ?m or less.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: March 20, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Yousuke Endo
  • Publication number: 20180072576
    Abstract: Provided is a method for efficiently producing tungsten carbide from a raw material mixture comprising at least one valuable containing tungsten. The present invention relates to a method for producing tungsten carbide, comprising the steps of subjecting a raw material mixture comprising at least one valuable containing tungsten to electrolysis using an organic electrolytic solution to dissolve tungsten in the electrolytic solution; and calcining the electrolytic solution containing dissolved tungsten at a temperature of 800° C. or more to obtain tungsten carbide.
    Type: Application
    Filed: March 28, 2016
    Publication date: March 15, 2018
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventor: Toshifumi KAWAMURA
  • Publication number: 20180073098
    Abstract: The present invention provides a method for removing iron from an iron-containing solution containing an iron ion, comprising adding a lithium ion battery cathode material containing manganese to an acidic sulfuric acid solution to obtain a cathode material-containing solution, and then precipitating a manganese ion as manganese dioxide in a mixed solution obtained by mixing the iron-containing solution with the cathode material-containing solution while precipitating the iron ion contained in the iron-containing solution as a solid.
    Type: Application
    Filed: March 29, 2016
    Publication date: March 15, 2018
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Junichi ARAKAWA, Junichi ITO, Takuya YOKOTA
  • Publication number: 20180065862
    Abstract: Provided is a novel polyoxometalate and a method for producing the polyoxometalate. The polyoxometalate is represented by the compositional formula: MxOy in which M is tungsten, molybdenum or vanadium; 4?x?1000; and 2.5?y/x?7.
    Type: Application
    Filed: March 30, 2016
    Publication date: March 8, 2018
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventor: Toshifumi KAWAMURA
  • Patent number: 9911518
    Abstract: A cathode active material for lithium-ion battery is provided, which provides good battery characteristics such as cycle characteristics. The cathode active material for lithium-ion battery is expressed by the composition formula: LixNi1-yMyO?, wherein M is one or more selected from Ti, Cr, Mn, Fe, Co, Cu, Al, Sn, Mg and Zr; 0.9?x?1.2; 0<y?0.5; and 2.0???2.2, wherein the crystallite size obtained by analyzing the XRD pattern is 870 ? or more and the unit lattice volume is 101.70 ?3 or less.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: March 6, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Tatsuya Kameyama, Tomoya Tamura
  • Patent number: 9909196
    Abstract: A high purity copper-cobalt alloy sputtering target containing 0.1 to 20 at % of Co, and remainder being Cu and unavoidable impurities, wherein a size (dimension) of precipitates in the target structure is 10 ?m or less, and a number of precipitates is 500 precipitates/mm2 or less. It is thereby possible to provide a high purity copper-cobalt alloy sputtering target capable of inhibiting the generation of particles during sputtering, and in particular improving the yield and reliability of semiconductor products that are being subject to further miniaturization and higher integration.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: March 6, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Kenichi Nagata, Tomio Otsuki
  • Publication number: 20180063950
    Abstract: Provided is a copper foil provided with a carrier in which the laser hole-opening properties of the ultrathin copper layer are good and which is suitable for producing a high-density integrated circuit substrate. A copper foil provided with a carrier having, in order, a carrier, an intermediate layer, and an ultrathin copper layer, wherein the specular gloss at 60° in an MD direction of the intermediate layer side surface of the ultrathin copper layer is 140 or less.
    Type: Application
    Filed: October 31, 2017
    Publication date: March 1, 2018
    Applicant: JX Nippon Mining & Metals Corporation
    Inventor: Michiya KOHIKI
  • Patent number: 9896745
    Abstract: A copper alloy sputtering target most suitable for formation of an interconnection material of a semiconductor device, particularly for formation of a seed layer, characterized in that the target contains 0.4 to 5 wt % of Sn, and the structure of the target does not substantially contain any precipitates, and the resistivity of the target material is 2.2 ??cm or more. This target enables formation of an interconnection material of a semiconductor device, particularly a uniform seed layer stable during copper electroplating and is excellent in sputtering deposition characteristics. A method for manufacturing such a target is also disclosed.
    Type: Grant
    Filed: December 4, 2002
    Date of Patent: February 20, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Takeo Okabe, Hirohito Miyashita
  • Patent number: 9890452
    Abstract: Provided is a tantalum sputtering target, which is characterized that an average crystal grain size of the target is 50 ?m or more and 200 ?m or less, and variation of a crystal grain size in the target plane is 40% or higher and 60% or less. This invention aims to provide a tantalum sputtering target capable of improving the uniformity of the film thickness and reducing the variation of the resistance value (sheet resistance).
    Type: Grant
    Filed: March 19, 2013
    Date of Patent: February 13, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Kotaro Nagatsu, Shinichiro Senda
  • Publication number: 20180002781
    Abstract: A method of leaching copper from a copper sulfide ore which includes adding a potential adjustment agent for lowering a potential of a leaching solution obtained after leaching copper from the copper sulfide ore by using iodide ion and iron (III) ion, the leaching solution being stored in a tank for storing the leaching solution.
    Type: Application
    Filed: March 14, 2016
    Publication date: January 4, 2018
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Shintaro KAWASHIRO, Akira MIURA
  • Patent number: 9859104
    Abstract: A tantalum sputtering target, wherein on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane is 70% or less, an orientation rate of a (222) plane is 10% or more, an average crystal grain size is 50 ?m or more and 150 ?m or less, and a variation in a crystal grain size is 30 ?m or less. By controlling the crystal orientation of the target, it is possible to increase the sputter rate, consequently deposit the required film thickness in a short period of time, and improve the throughput. In addition, by controlling the crystal grain size on the sputtering surface of the target, an effect is yielded in that the abnormal discharge during sputtering can be suppressed.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: January 2, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shinichiro Senda, Kotaro Nagatsu
  • Patent number: 9859031
    Abstract: A rolled Cu—Ni—Si based copper alloy having excellent strength, electric conductivity, and bending coefficient is provided. The rolled copper alloy comprises 1.2 to 4.5% by mass Ni, 0.25 to 1.0% by mass Si, and the balance Cu with inevitable impurities. In the direction transverse to the rolling direction, the rolled copper alloy has a bending coefficient of 130 GPa or more and an electrical conductivity of 30% ICAS or more.
    Type: Grant
    Filed: February 15, 2013
    Date of Patent: January 2, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Hiroshi Kuwagaki