Abstract: The present invention provides a surface-treated copper foil capable of imparting the profile shape of the substrate surface after removal of the copper foil, the profile shape maintaining fine wiring formability and achieving satisfactory adhesion of electroless copper plating coating. The present invention also provides a resin substrate provided with a profile shape of the surface maintaining fine wiring formability and achieving satisfactory adhesion of electroless copper plating coating. The surface-treated copper foil of the present invention is a surface-treated copper foil having a surface-treated layer formed on a copper foil, and the surface roughness Sz of the surface of the surface-treated layer is 2 to 6 ?m.
Abstract: A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe100-x—Ptx)100-A—CA (provided A is a number which satisfies 20?A?50 and X is a number which satisfies 35?X?55), wherein C grains are finely dispersed in an alloy, and the relative density is 90% or higher. The production of a magnetic thin film with granular structure is provided without using an expensive simultaneous sputtering device, and a high-density sputtering target capable of reducing the amount of particles generated during sputtering is provided.
Abstract: In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal.
Abstract: Provided is a method for efficiently separating and recovering tungsten and other valuable(s) from at least one valuable containing tungsten. The present invention relates to a method for recovering at least one valuable containing tungsten, comprising subjecting a raw material mixture comprising at least one valuable containing tungsten to electrolysis using an electrolytic solution containing at least one alcohol amine to dissolve tungsten in the electrolytic solution, electrodeposit a part of the valuable(s) onto a cathode used for the electrolysis and separate at least one valuable other than the valuable(s) electrodeposited onto the cathode as a residue in the electrolytic solution, and then separating and recovering each of the residue and the valuable(s) electrodeposited onto the cathode.
Abstract: The present invention provides a method for removing copper from lithium ion battery scrap containing copper, comprising a leaching step of adding the lithium ion battery scrap to an acidic solution and leaching the lithium ion battery scrap under a condition that an aluminum solid is present in the acidic solution; and a copper separating step of separating copper contained in the acidic solution as a solid from the acidic solution, after the leaching step.
March 29, 2016
March 29, 2018
JX NIPPON MINING & METALS CORPORATION
Ken ADACHI, Junichi ARAKAWA, Junichi ITO
Abstract: Provided is an ultrathin copper foil which has improved thickness accuracy of an ultrathin copper layer on a supporting copper foil. An ultrathin copper foil which is provided with a supporting copper foil, a releasing layer that is laminated on the supporting copper foil, and an ultrathin copper layer that is laminated on the releasing layer. The thickness accuracy of the ultrathin copper layer as determined by a weight thickness method is 3.0% or less.
Abstract: Provided is a method for efficiently producing tungsten from a raw material mixture comprising at least one valuable containing tungsten. The present invention relates to a method for producing tungsten, comprising the steps of subjecting a raw material mixture comprising at least one valuable containing tungsten to electrolysis using an organic electrolytic solution to dissolve tungsten in the electrolytic solution; and calcining the electrolytic solution containing dissolved tungsten at a temperature of less than 800° C. to obtain tungsten.
Abstract: The present invention provides a method for treating at least one lithium ion battery enclosed in a housing containing aluminum, comprising heating the lithium ion battery using a combustion furnace in which a combustion object is incinerated by flames, while preventing the flames from being directly applied to the housing of the lithium ion battery.
Abstract: A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an average grain size of 3,000 ?m or less.
Abstract: Provided is a method for efficiently producing tungsten carbide from a raw material mixture comprising at least one valuable containing tungsten. The present invention relates to a method for producing tungsten carbide, comprising the steps of subjecting a raw material mixture comprising at least one valuable containing tungsten to electrolysis using an organic electrolytic solution to dissolve tungsten in the electrolytic solution; and calcining the electrolytic solution containing dissolved tungsten at a temperature of 800° C. or more to obtain tungsten carbide.
Abstract: The present invention provides a method for removing iron from an iron-containing solution containing an iron ion, comprising adding a lithium ion battery cathode material containing manganese to an acidic sulfuric acid solution to obtain a cathode material-containing solution, and then precipitating a manganese ion as manganese dioxide in a mixed solution obtained by mixing the iron-containing solution with the cathode material-containing solution while precipitating the iron ion contained in the iron-containing solution as a solid.
Abstract: Provided is a novel polyoxometalate and a method for producing the polyoxometalate. The polyoxometalate is represented by the compositional formula: MxOy in which M is tungsten, molybdenum or vanadium; 4?x?1000; and 2.5?y/x?7.
Abstract: A cathode active material for lithium-ion battery is provided, which provides good battery characteristics such as cycle characteristics. The cathode active material for lithium-ion battery is expressed by the composition formula: LixNi1-yMyO?, wherein M is one or more selected from Ti, Cr, Mn, Fe, Co, Cu, Al, Sn, Mg and Zr; 0.9?x?1.2; 0<y?0.5; and 2.0???2.2, wherein the crystallite size obtained by analyzing the XRD pattern is 870 ? or more and the unit lattice volume is 101.70 ?3 or less.
Abstract: A high purity copper-cobalt alloy sputtering target containing 0.1 to 20 at % of Co, and remainder being Cu and unavoidable impurities, wherein a size (dimension) of precipitates in the target structure is 10 ?m or less, and a number of precipitates is 500 precipitates/mm2 or less. It is thereby possible to provide a high purity copper-cobalt alloy sputtering target capable of inhibiting the generation of particles during sputtering, and in particular improving the yield and reliability of semiconductor products that are being subject to further miniaturization and higher integration.
Abstract: Provided is a copper foil provided with a carrier in which the laser hole-opening properties of the ultrathin copper layer are good and which is suitable for producing a high-density integrated circuit substrate. A copper foil provided with a carrier having, in order, a carrier, an intermediate layer, and an ultrathin copper layer, wherein the specular gloss at 60° in an MD direction of the intermediate layer side surface of the ultrathin copper layer is 140 or less.
Abstract: A copper alloy sputtering target most suitable for formation of an interconnection material of a semiconductor device, particularly for formation of a seed layer, characterized in that the target contains 0.4 to 5 wt % of Sn, and the structure of the target does not substantially contain any precipitates, and the resistivity of the target material is 2.2 ??cm or more. This target enables formation of an interconnection material of a semiconductor device, particularly a uniform seed layer stable during copper electroplating and is excellent in sputtering deposition characteristics. A method for manufacturing such a target is also disclosed.
Abstract: Provided is a tantalum sputtering target, which is characterized that an average crystal grain size of the target is 50 ?m or more and 200 ?m or less, and variation of a crystal grain size in the target plane is 40% or higher and 60% or less. This invention aims to provide a tantalum sputtering target capable of improving the uniformity of the film thickness and reducing the variation of the resistance value (sheet resistance).
Abstract: A method of leaching copper from a copper sulfide ore which includes adding a potential adjustment agent for lowering a potential of a leaching solution obtained after leaching copper from the copper sulfide ore by using iodide ion and iron (III) ion, the leaching solution being stored in a tank for storing the leaching solution.
Abstract: A tantalum sputtering target, wherein on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane is 70% or less, an orientation rate of a (222) plane is 10% or more, an average crystal grain size is 50 ?m or more and 150 ?m or less, and a variation in a crystal grain size is 30 ?m or less. By controlling the crystal orientation of the target, it is possible to increase the sputter rate, consequently deposit the required film thickness in a short period of time, and improve the throughput. In addition, by controlling the crystal grain size on the sputtering surface of the target, an effect is yielded in that the abnormal discharge during sputtering can be suppressed.
Abstract: A rolled Cu—Ni—Si based copper alloy having excellent strength, electric conductivity, and bending coefficient is provided. The rolled copper alloy comprises 1.2 to 4.5% by mass Ni, 0.25 to 1.0% by mass Si, and the balance Cu with inevitable impurities. In the direction transverse to the rolling direction, the rolled copper alloy has a bending coefficient of 130 GPa or more and an electrical conductivity of 30% ICAS or more.