Abstract: A thermoelectric generator unit includes: a case having a heating surface and a cooling surface; first to fourth thermoelectric generator modules housed in the case, the thermoelectric generator modules including a plurality of thermoelectric elements; a multilayer substrate including: a first layer including an interelement electrode for forming an output circuit configured to connect the thermoelectric elements; a second layer provided with a plurality of through holes penetrating therethrough from front to back; and a third layer including a plurality of bypass patterns electrically continuous with the through holes; and lead pins that penetrate through the case inward and outward, the lead pins having base ends connected to both ends of the output circuit on a surface of the first layer, the output circuit being defined in each of the thermoelectric generator modules.

Abstract: A plurality of temperature adjusters each independently include a control loop. A manipulated variable calculator is configured to give manipulated variables to the respective temperature adjusters and includes a reference model output generator configured to provide a reference model as a response output for reaching a temperature setpoint when a first control loop having a slowest response speed among the control loops is defined to have a 100% manipulated variable. The reference model output generator includes: a simulator configured to determine a manipulated variable pattern by conducting successive search of a switching time; and a reference model obtained from a response in which, among the plurality of control loops, the first control loop having the slowest response speed is defined to have the 100% manipulated variable, and the rest of the plurality of control loops are controlled to follow the first control loop.

Abstract: A manipulated variable calculator having a plurality of control loops and configured to calculate manipulated variables to be respectively given to a plurality of temperature adjusters includes: a reference model output generator configured to generate a reference model that generates a response output until reaching a temperature setpoint when, in the plurality of control loops, a manipulated variable of a control loop having the slowest response speed is defined as 100%; a simulator configured to sequentially search for a switching time to determine a manipulated variable pattern; a reference model configured to generate a reference model output based on the searched switching time; and a reference model selecting unit configured to select the reference model depending on a heating responsiveness and a cooling responsiveness of the temperature adjusters.

Abstract: Provided is a tunnel boring machine that can detect a wear condition of a disc cutter with a highly reliable configuration. The tunnel boring machine includes a measurement device. The measurement device is disposed behind the disc cutter mounted on a cutter head. The measurement device has a function as an acquisition unit that acquires cutting edge position data indicating a position of a cutting edge part of a cutter ring in the disc cutter. The tunnel boring machine further includes a DC discrimination unit that discriminates which one of a plurality of disc cutters is the disc cutter the cutting edge position data of which is acquired by the measurement device and a wear amount calculator that calculates a wear amount of the cutting edge part of the discriminated disc cutter.

Abstract: A thermoelectric power module which can be manufactured without spoiling solderability or joining strength when a thermoelectric element and an electrode are joined to each other by using solder, and in which electric resistance does not largely increase in long time use.

Abstract: A thermoelectric power module capable of suppressing diffusion of not only a material of a solder layer but also a material of a solder joint layer into a thermoelectric element, or suppressing oxidation of the thermoelectric element. The thermoelectric power module includes in sequence: a thermoelectric element consisting essentially of a thermoelectric material containing at least two kinds of elements of bismuth (Bi), tellurium (Te), antimony (Sb), and selenium (Se) as principal components; a first diffusion prevention layer consisting essentially of at least one of molybdenum (Mo) and tungsten (W); a second diffusion prevention layer consisting essentially of at least one of cobalt (Co), titanium (Ti), and an alloy or compound containing them as principal components; and a solder joint layer consisting essentially of at least one of nickel (Ni), tin (Sn), and an alloy or compound containing them as principal components.

Abstract: A thermoelectric generating device includes: a thermoelectric generating element configured to convert thermal energy to electric energy and to output the electric energy; a temperature measuring unit configured to measure hot side temperature of the thermoelectric generating element; and a temperature controller configured to perform control to increase an amount of current returning to the thermoelectric generating element when the hot side temperature becomes higher than predetermined temperature.

Abstract: A temperature controller for a semiconductor wafer is configured to perform a temperature control on a plurality of temperature adjusters including a reference temperature adjuster to perform a temperature adjustment of the semiconductor wafer, in which a manipulated variable calculator to give a manipulated variable to a master loop and a slave loop includes a master-slave switching unit configured to switch between the master loop and the slave loop and a master-slave cancellation unit configured to cancel a setting of the master loop and the slave loop when a temperature setpoint of the slave loop is set to have a temperature gradient against a temperature setpoint of the master loop.

Abstract: A thermoelectric power module capable of suppressing diffusion of not only a material of a solder layer but also a material of a solder joint layer into a thermoelectric element, or suppressing oxidation of the thermoelectric element. The thermoelectric power module includes in sequence: a thermoelectric element consisting essentially of a thermoelectric material containing at least two kinds of elements of bismuth (Bi), tellurium (Te), antimony (Sb), and selenium (Se) as principal components; a first diffusion prevention layer consisting essentially of at least one of molybdenum (Mo) and tungsten (W); a second diffusion prevention layer consisting essentially of at least one of cobalt (Co), titanium (Ti), and an alloy or compound containing them as principal components; and a solder joint layer consisting essentially of at least one of nickel (Ni), tin (Sn), and an alloy or compound containing them as principal components.

Abstract: A thermoelectric element includes a p-type/n-type semiconductor element having an upper end surface and a lower end surface, a lower electrode that is joined to the lower end surface of the p-type/n-type semiconductor element to connect the p-type/n-type semiconductor element and another n-type/p-type semiconductor element adjacently thereto and has an area less than that of the lower end surface in a joint region therebetween. A joint portion is made of a solder and has a surface joint part joining the lower end surface of the p-type/n-type semiconductor element and a surface of the lower electrode while the lower end surface of the p-type/n-type semiconductor element and the surface of the lower electrode are opposed to each other A fillet part is formed to fill a space produced between intersecting surfaces, i.e., the lower end surface and a lateral side of the lower electrode, and composes a step part formed by the lower end surface and the lower electrode.

Abstract: A thermoelectric power module comprising: a thermoelectric element employing a bismuth-tellurium (Bi—Te) based thermoelectric material; at least one barrier layer disposed on the thermoelectric element; an electrode; an electrode protection layer disposed at least on one principal surface of the electrode; a solder layer having a side surface formed with a recess, the solder layer joining a first region of the electrode protection layer to the at least one barrier layer; and a coating film disposed on a side surface of the thermoelectric element, a side surface of the at least one barrier layer, and the side surface of the solder layer, the coating film covering a second region adjacent to the first region of the electrode protection layer and being filled into the recess of the solder layer.

Abstract: A circulating cooling/heating device that is configured to cool and heat a circulating fluid supplied to a chamber in plasma-etching equipment includes: a reservoir configured to store the circulating fluid; a pump configured to circulate the circulating fluid between the reservoir and the chamber; a heat exchanger configured to perform heat exchange between the circulating fluid and a cooling water, the heat exchanger being immersed in the circulating fluid stored in the reservoir; and a heater configured to heat the circulating fluid in the reservoir.

Abstract: A temperature controller that performs a temperature control on a plurality of temperature adjusters including a reference temperature adjuster to adjust a temperature of a semiconductor wafer includes a setpoint setting section that: sets a temperature detected by a master temperature detector as a control setpoint for a reference one of the temperature adjusters of a master loop, until a temporary setpoint below an actual control setpoint preset as a desired temperature of the semiconductor wafer is reached; and sets the actual control setpoint as the control setpoint for the master loop after the temporary setpoint is reached.

Abstract: A thermoelectric module includes a low temperature-side wiring line, a high temperature-side wiring line, a low temperature-side member, a plurality of low temperature-side thermoelectric conversion elements made of a BiTe-based material, a high temperature-side member, a plurality of high temperature-side thermoelectric conversion elements made of a material different from the BiTe-based material, an insulating member, a radiant heat blocking plate, a low temperature-side electrode, and a high temperature-side electrode. The radiant heat blocking plate is arranged on the side of the high temperature-side member with respect to the low temperature-side wiring line and the high temperature-side wiring line. A thermoelectric module that can restrain burning of wiring lines, as well as a thermoelectric power generating apparatus and a thermoelectric generator including the same can thereby be obtained.

Abstract: A temperature adjustment apparatus suppresses decline in temperature adjustment performance by avoiding even partial impairment of the function of a thermoelectric module in respective zones, which is accomplished due to the presence of terminals. A terminal is provided via an electrode extension section on a heat exchange plate side electrode of the thermoelectric module of inner zones apart from an outermost zone, of four zones. The electrode extension section is disposed at a position which is sandwiched between adjacent thermoelectric elements and over which a temperature adjustment side electrode spans. The terminals are disposed outside the thermoelectric module in the outermost zone.

Abstract: A thermoelectric generating device includes: a thermoelectric generating element configured to convert thermal energy to electric energy and to output the electric energy; a temperature measuring unit configured to measure hot side temperature of the thermoelectric generating element; and a temperature controller configured to perform control to increase an amount of current returning to the thermoelectric generating element when the hot side temperature becomes higher than predetermined temperature.

Abstract: A Peltier module for laser diode that can be mounted with high melting point solder is provided. A Peltier module for laser diode includes: a heat dissipation-side substrate; a heat dissipation-side electrode; a p-type thermoelectric conversion element and an n-type thermoelectric conversion element; a solder joint layer; and Ni-containing layers. The solder joint layer is disposed between the heat dissipation-side electrode and each of the p-type and n-type thermoelectric conversion elements, and includes Ni intermetallic compound containing Au and Sn, Au5Sn intermetallic compound, and a eutectic composition including Au5Sn intermetallic compound and AuSn intermetallic compound. The Ni-containing layer is disposed between the solder joint layer and the heat dissipation-side electrode and between the solder joint layer and each of the p-type and n-type thermoelectric conversion elements. The solder joint layer has a eutectic ratio of 15.1% or less.

Abstract: A temperature adjustment system configured to adjust the temperature of a fluid used in a semiconductor manufacturing apparatus includes: a heat exchanger including therein a temperature adjuster for heating and cooling the fluid, the heat exchanger being configured to perform heat exchange between the fluid therein and the temperature adjuster; a temperature sensor configured to measure the temperature of the fluid; a PID-constant calculator configured to calculate PID constants for PID control based on the physical properties of the fluid and a time constant of the temperature sensor; and a PID-control calculator configured to perform the PID control on the temperature adjuster with the PID constants calculated by the PID-constant calculator.

Abstract: A circulating cooling/heating device configured to cool and heat a circulating fluid supplied to a chamber in plasma-etching equipment includes: a heat exchanger configured to perform heat exchange between the circulating fluid and a cooling water; a heater configured to heat the circulating fluid; a pump configured to circulate the circulating fluid between the circulating cooling/heating device and the chamber; a cooling water circulation block through which the cooling water passes; and a pressure sensor serving as a pressure detecting unit configured to detect a pressure of the cooled or heated circulating fluid, the pressure sensor being attached to the cooling water circulation block.

Abstract: A temperature control device includes: a circulating cooling/heating unit cooling and heating a circulating fluid and circulating the circulating fluid relative to a chamber; a controller adjusting a temperature of the circulating fluid to adjust the temperature of the chamber to a temperature setpoint, and a housing for housing the circulating cooling/heating unit and the controller, the housing defining therein a circulation chamber in which the circulating cooling/heating unit is disposed and a control chamber in which the controller is disposed. These chambers are on the same level. A reservoir for storing the circulating fluid, a pump for circulating the circulating fluid, a heat exchanger for cooling the circulating fluid, and a heater for heating the circulating fluid are disposed in the circulation chamber. An inverter for controlling a drive of the pump and an SSR for switching ON/OFF of the heater are disposed in the control chamber.