Abstract: A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.

Abstract: An edge ring is configured to be raised and lowered relative to a substrate support, via one or more lift pins, in a substrate processing system. The edge ring is further configured to interface with a guide feature extending upward from a bottom ring and/or a middle ring of the substrate support during tuning of the edge ring. The edge ring includes an upper surface, an annular inner diameter, an annular outer diameter, a lower surface, and an annular groove arranged in the lower surface of the edge ring to interface with the guide feature. Walls of the annular groove are substantially vertical.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Vapor accumulator reservoirs for semiconductor processing operations, such as atomic layer deposition operations, are provided. Such vapor accumulator reservoirs may include a perimeter plenum volume filled with an inert gas, which may reduce or prevent the leakage of external contaminants into a process gas. In some implementations, the reservoir may be constructed from corrosion-resistant materials to reduce internal contaminants into the process gas.

Abstract: A gas conditioning apparatus comprising a substrate block comprising one or more fluid ports on an upper surface of the substrate block. The substrate block has a first length along a sidewall. The substrate block comprises an inlet port at a first end and an outlet port at a second end. A flow passage extends within the substrate block between the inlet port and the outlet port and is in fluidic communication with the one or more fluid ports. At least one heater strip is on the sidewall of the substrate block. The at least one heater strip extends between the first end and the second end and is to control an internal temperature within a zone of the substrate block. The zone has a second length that is less than or substantially equal to the first length.

Abstract: A patterning method includes etching a mask formed above a stack of two or more layers where the mask comprises a first patterned structure, a second patterned structure above the first patterned structure, where portions of the second patterned structure intersect the first patterned structure to form intersections and at least an opening. The mask includes a structure vertically between portions of the second patterned structure and the stack. The method includes etching a first layer of the stack through the opening and exposing a top surface of a second layer below the first layer, etching and removing the first patterned structure and the second patterned structure selectively to the first layer and the top surface of the second layer to form a planar mask comprising the first layer. The method further includes etching the second layer of the stack using the planar mask.

Abstract: Described is a wafer chuck assembly comprising a platen with one or more plasma electrodes, and a radio frequency (RF) assembly comprising at least one RF conductor electrically coupled to the one or more plasma electrodes. The at least one RF conductor comprises a rod with a rod tip coupled to the one or more plasma electrodes, and a rod stem mechanically coupled to a thermal choke with a hollow interior. The rod comprises a first electrically conductive material and has a first width and a first length. The thermal choke comprises a second electrically conductive material, and has a second width and a second length; and the second width is equal or greater than the first width.

Abstract: A manifold assembly for a processing chamber in a substrate processing system includes a manifold. The manifold includes a first valve assembly configured to flow a liquid coolant at a first temperature from a first channel of a coolant assembly to the processing chamber. The first valve assembly is configured to flow the liquid coolant at a cryogenic temperature. The manifold further includes a first weldment block including tubing associated with the first valve assembly, a second valve assembly configured to flow the liquid coolant at a second temperature greater than the first temperature from a second channel of the coolant assembly to the processing chamber, and a second weldment block including tubing associated with the second valve assembly. An insulative housing enclosing the first valve assembly, the first weldment block, and the second weldment block. The insulative housing is comprised of a plurality of layers of an insulative material.

Abstract: A method for operating a plasma chamber to increase ion energy and decrease angular spread of ions during an etch operation is described. Method includes placing a substrate on an electrostatic chuck within the plasma chamber, wherein the electrostatic chuck is electrically coupled to a node. Method further includes forming a plasma in the plasma chamber, where the plasma produces a sheath with a first sheath voltage. The method further includes increasing the first sheath voltage to a second sheath voltage by applying a non-sinusoidal voltage at the electrostatic chuck and by applying a sinusoidal voltage at the electrostatic chuck, where a sum of the non-sinusoidal voltage and the sinusoidal voltage creates a voltage response on the electrostatic chuck that effectuates a change in a spread in ion energy at the wafer.

Abstract: A wafer processing apparatus comprising a vacuum chamber, the vacuum chamber comprising a wafer transfer arm and a wafer transfer paddle coupled to the wafer transfer arm. The wafer transfer paddle comprises at least one minimum contact area (MCA) feature integral with an upper surface of the wafer transfer paddle and extending a z-height over the upper surface of the wafer transfer paddle. The wafer transfer paddle comprises a gas flow bypass structure on or adjacent to the MCA feature.

Abstract: A valve including a valve body. An actuation housing of the valve body surrounds an actuation cavity. The actuation housing includes a first port configured for entry of actuating air and a second port configured for exhausting the actuating air. A poppet is configured for movement within the valve body and includes a barrier located within the actuation cavity. The poppet being actuated to an open position using the actuating air entering in the first port. When the poppet is in the open position, the actuating air flowing between the first port and the second port cools the stem.

Abstract: A substrate support includes a body and a thermal void. The body is configured to support a substrate during processing of the substrate. The body includes plates including a top plate, a first intermediate plate, a second intermediate plate and a bottom plate. The plates are arranged to form a stack. The first intermediate plate is disposed on the second intermediate plate. The thermal void is defined by an upper surface of the second intermediate plate and at least one of a lower surface of the first intermediate plate or a lower surface of the top plate. The thermal void is annular-shaped.

Abstract: A sorption structure used in a plasma process chamber includes an inner layer having one or more heating elements to heat the sorption structure, a middle section having a lattice structure and a coolant flow delivery network through which a coolant circulates to cool the sorption structure, and a vacuum flow network that is connected to a vacuum line to create low pressure vacuum. The lattice structure includes network of openings defined in a plurality of layers. The inner layer is disposed adjacent to the middle section and an outer layer of the lattice structure faces an interior region of the chamber. The openings in the layers of the lattice structure progressively increase in size from the inner layer to the outer layer. The lattice structure is used to adsorb by-products released in the process chamber and the vacuum flow network is used to remove the by-products.

Abstract: Various embodiments include apparatuses and methods to form the apparatus. In one embodiment, the apparatus is a flow meter having inlet and outlet portions for transporting a fluid along a flow path. A flow-restrictor element is formed within the flow path to impart a pressure drop to the fluid. A flow sensor has a first surface of the flow sensor in direct fluid communication with fluid flowing upstream of the flow-restrictor element and a second surface, on a portion of the flow sensor opposite to the first surface, in direct fluid communication with fluid flowing downstream of the flow-restrictor element. The flow sensor senses a differential pressure in the fluid due to the at least one flow-restrictor element. Other apparatuses and systems are disclosed.

Abstract: Systems and methods for compressing data are described. One of the methods includes receiving a plurality of measurement signals from one or more sensors coupled to a radio frequency (RF) transmission path of a plasma tool. The RF transmission path is from an output of an RF generator to an electrode of a plasma chamber. The method includes converting the plurality of measurement signals from an analog form to a digital form to sample data and processing the data to reduce an amount of the data. The amount of the data is compressed to output compressed data. The method includes sending the compressed data to a controller for controlling the plasma tool.

Abstract: A substrate support includes an edge ring, a heater element arranged within the edge ring, a ceramic layer, at least one heating element arranged within the ceramic layer, and a cable configured to provide power from a power source to the heater element and the at least one heating element. The cable includes a first plurality of wires connected to the heater element, a second plurality of wires connected to the at least one heating element, a filter module, and an isolation device connected only to the first plurality of wires between the filter module and the heater element. The first and second pluralities of wires are twisted together within the filter module. The isolation device is configured to compensate for a resonance frequency generated during operation of the heater element and the at least one heating element.

Abstract: A substrate processing system for processing a substrate within a processing chamber is provided and includes a source terminal, a substrate support, and a tuning circuit. The substrate support holds the substrate and includes first and second electrodes, which receive power from a power source via the source terminal. The tuning circuit is connected to the first electrode or the second electrode. The tuning circuit is allocated for tuning signals provided to the first electrode. The tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is serially connected between the first electrode and the power source and receives a first signal from the power source via the source terminal. The second impedance set is connected between an output of the power source and a reference terminal and receives the first signal from the power source via the source terminal.

Abstract: Systems and techniques for determining and using multiple types of offsets for providing wafers to a transfer pedestal of a multi-station processing chamber are disclosed. Such techniques may be used to provide pedestal-specific offsets that may be selected based on which pedestal of a multi-station chamber is assigned to a particular wafer. Similar techniques may be used to provide wafer support-specific offsets based on which indexer arm of an indexer is assigned to a given wafer.

Abstract: A method for multi-state pulsing to achieve a balance between bow control and mask selectivity is described. The method includes generating a primary radio frequency (RF) signal. The primary RF signal pulses among three states including a first state, a second state, and a third state. The method further includes generating a secondary RF signal. The secondary RF signal pulses among the three states. During the first state, the primary RF signal has a power level that is greater than a power level of the secondary RF signal. Also, during the second state, the secondary RF signal has a power level that is greater than a power level of the primary RF signal. During the third state, power levels of the primary and secondary RF signals are approximately equal.

Abstract: An apparatus for processing a wafer comprises: a rotatable chuck adapted to receive a wafer; a heating assembly comprising an array of light-emitting heating elements arranged to illuminate a wafer received by the rotatable chuck to heat the wafer; and one or more light sensors arranged to detect light emitted by the array of light-emitting heating elements.