Abstract: Dry development of resists can be useful, for example, to form a patterning mask in the context of high-resolution patterning. Dry development may be advantageously accomplished by a method of processing a semiconductor substrate including providing in a process chamber a photopatterned resist on a substrate layer on a semiconductor substrate, and dry developing the photopatterned resist by removing either an exposed portion or an unexposed portion of the resist by a dry development process comprising exposure to a chemical compound to form a resist mask. The resist may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film EUV resist.

Abstract: In joining composite ceramic bodies, at least one ceramic body is a compositionally graded with varying concentrations between two or more ceramic materials. The compositionally graded ceramic body terminates at an interfacial layer that is substantially composed of a single ceramic material. The compositionally graded ceramic body is joined to another ceramic body that may also be compositionally graded or made of a single ceramic material, and an interfacial layer of the other ceramic body is identical in composition with the interfacial layer of the compositionally graded ceramic body. In some embodiments, the ceramic bodies may be joined by diffusion bonding. In some embodiments, the ceramic bodies include a ceramic platen and ceramic stem of a wafer pedestal implemented in a plasma processing apparatus.

Abstract: Methods and apparatuses for providing an anisotropic ion beam for etching and treatment of substrate are discussed. In one embodiment, a system for processing a substrate includes a chamber, a chuck assembly, an ion source, and a grid system. The ion source includes grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source to form an ion beam. The grid system is oriented so the ion beam is directed into the chamber toward the substrate support, and the array of holes of the grid system is defined vertically by a y-axis and horizontally by an x-axis, The array of holes is defined by hole densities that vary vertically in the y-axis such that the ion beam is caused to have an energy density gradient that is defined vertically in the y-axis.

Abstract: Various showerheads and methods are provided. A showerhead may include a faceplate partially defined by a front surface and a back surface, a back plate having a gas inlet, a first conical frustum surface, and a second conical frustum surface, a plenum volume fluidically connected to the gas inlet and at least partially defined by the gas inlet, the back surface of the faceplate, the first conical frustum surface, and the second conical frustum surface, and a baffle plate positioned within the plenum volume, and having a plurality of baffle plate through-holes extending through the baffle plate. The second conical frustum surface may be positioned radially outwards from the first conical frustum surface with respect to a center axis of the showerhead, and the second conical frustum surface may be positioned along the center axis farther from the gas inlet than the first conical frustum surface.

Abstract: A radio frequency (RF) power generator adapted for coupling to a multi-station integrated circuit fabrication chamber may include an oscillator to provide a periodic signal and one or more preamplifiers each having an input port to receive a signal from the oscillator and having an output port to provide an amplified signal. The RF generator may additionally include one or more constant-gain amplifiers, each having an input port to receive a signal from the one or more preamplifiers, and an output port configured for coupling an amplified signal to an electrode for generating a plasma in an assigned station of the multi-station integrated circuit fabrication chamber.

Abstract: An apparatus adapted for use in a plasma processing chamber is provided. An aluminum body with at least one surface is provided. An aluminum oxide containing aerosol deposition coating is disposed over the at least one surface of the aluminum body. An yttrium containing aerosol deposition coating is disposed over the aluminum oxide containing aerosol deposition coating.

Abstract: An RF antenna is configured, when powered, to inductively generate plasma in a process region of a chamber, including: an array of parallel conductive lines that are oriented along a plane, the array including a first conductive line, a second conductive line, a third conductive line, and a fourth conductive line; wherein the first and second conductive lines are adjacent, wherein the second and third conductive lines are adjacent, and wherein the third and fourth conductive lines are adjacent; wherein when the RF antenna is powered, current flow in the adjacent first and second conductive lines occurs in an opposite direction, current flow in the adjacent second and third conductive lines occurs in a same direction, current flow in the adjacent third and fourth conductive lines occurs in an opposite direction.

Abstract: A vapor delivery head for wet treatment of a substrate includes a body including an upper surface, a lower surface, an upper plenum and a lower plenum. A first bore is arranged on the upper surface of the body and fluidly connected to the upper plenum to supply heated fluid. A second bore is arranged on the upper surface of the body and connected to the upper plenum to remove heated fluid. A third bore is arranged on the upper surface of the body and connected to the lower plenum to receive a gas mixture. A plurality of through holes through the lower surface of the body are in fluid communication with the lower plenum.

Abstract: In one embodiment, the disclosed apparatus is an in-situ, closed-loop bubble and foam detection and reduction system that includes a liquid-level sensor to determine a volume of a liquid in a fluid reservoir, a mass-detection device to determine a mass of the fluid reservoir and any liquid contained within the fluid reservoir, a processor electrically coupled to the liquid-level sensor and the mass-detection device to determine an actual volume of the liquid within the fluid reservoir, and a showerhead coupled to the processor and positioned above the fluid reservoir. The showerhead is activated by the processor when a volume of the liquid determined by the liquid-level sensor exceeds the actual volume of the liquid by a predetermined amount. Other apparatuses and methods are disclosed.

Abstract: A method for evacuating a volume below a substrate in a substrate processing system includes arranging the substrate on a lift mechanism of a substrate support to define the volume below the substrate between the substrate and an upper surface of the substrate support. An evacuation step is initiated to evacuate the volume below the substrate. The evacuation step includes pumping down the volume below the substrate at least one of through and around the lift mechanism. The lift mechanism is lowered during the evacuation step to position the substrate on the upper surface of the substrate support and the evacuation step is terminated.

Abstract: A robot system for servicing a semiconductor tool includes a cart frame. An arm support frame is fixed to the cart frame and is coupled to a robot arm. An arm frame is connected by hinges to the arm support frame at a first end and to a fixture connect interface at a second end. The fixture connect interface connects to a docking fixture of the semiconductor tool. An arm locking mechanism is attached to the arm support frame for locking the arm frame, when rotated, to an extended position or a folded position. The fixture connect interface connects the cart frame to the semiconductor tool, when the arm frame is locked in the extended position.

Abstract: A substrate support assembly to support a semiconductor substrate in a processing chamber includes a baseplate arranged in the processing chamber, a dielectric layer arranged on the baseplate to support the semiconductor substrate, an electrode disposed in the dielectric layer along a horizontal plane, and a plurality of channels to carry a fluid. The plurality of channels are disposed in the dielectric layer along the horizontal plane on a side of the electrode facing away from the baseplate.

Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Abstract: A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl4), carbon tetrachloride (CCl4), a hydrocarbon (CxHy where x and y are integers) and molecular chlorine (Cl2), boron trichloride (BCl3), and thionyl chloride (SOCl2); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.

Abstract: A gas delivery apparatus having a heating block assembly, a heating element, a gas line, and a temperature-sensing switch. The heating block assembly includes a pair of heating blocks. Individual ones of the pair of heating blocks comprise a planar surface. The planar surface comprises first and second grooves that are substantially parallel. The first and second grooves extend along a length of the heating block. The planar surfaces of the individual ones of the pair of heating blocks are in mechanical contact with each other. The heating element is within the first groove. The first groove and the heating element extend along a length of the heating block assembly. A gas line is within the second groove. The second groove is adjacent to the first groove within the heating block assembly. The temperature-sensing switch is mechanically coupled to the heating block assembly and electrically coupled to the heating element.

Abstract: Various embodiments include heat and volatile-organic-compounds detecting systems. In one example, the heat-detecting system includes at least one heat sensor mounted externally to a device, such as a local power-box (LPB). The heat sensor has an area-of-detection to detect heat emitted from at least one face of the LPB at one or more locations. The heat-detecting system also includes a high-absorptance infrared-collector (HAIC) formed within the LPB to collect excessive heat generated by a component within the LPB. The excessive heat is correlated to a pre-determined temperature level, and a temperature of the collected excessive heat is measured by the heat sensor. Each of the heat sensor and the HAIC are coupled to a control module. Other apparatuses, designs, and methods are disclosed.

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

Abstract: Method for tuning a voltage setpoint for a multi-state pulsed RF signal in a plasma processing system, including: applying RF power from a first generator to an ESC, the RF power from the first generator defining a first multi-state pulsed RF signal; applying RF power from a second generator to an edge electrode that surrounds the ESC and is disposed below an edge ring that surrounds the ESC, the RF power from the second generator defining a second multi-state pulsed RF signal having a first state and a second state, wherein for each state of the second multi-state pulsed RF signal, the second generator automatically introduces a phase adjustment to substantially match phase with a corresponding state of the first multi-state pulsed RF signal; adjusting a voltage setpoint for the second state of the second multi-state pulsed RF signal to tune the phase adjustment to a target phase adjustment setting.

Abstract: Various embodiments herein relate to a Mixed Reality (MR) control platform to operate a semiconductor manufacturing tool in an MR environment and to display data associated with the semiconductor manufacturing tool. In son embodiments, the MR control platform comprises an MR control system and an MR headset. The MR control system can obtain sensor data representative of sensor output from a semiconductor manufacturing tool. The MR control system can determine operational information associated with the semiconductor manufacturing tool and based on the sensor data. The MR control system can cause the operational information to be transmitted to the MR headset. The MR headset can receive the operational information associated with the semiconductor manufacturing tool from the MR control system. The MR headset can cause content associated with the operational information and one or more control features to be rendered in an MR environment.