Abstract: Provided is a backlight unit including a plurality of light emitting diodes (LEDs) that emit light; a plurality of LED modules having a printed circuit board (PCB) which supports and drives the plurality of LEDs; a plurality of optical sheets that are attached to the top surfaces of the respective LED modules; and a plurality of heat radiating pads that are attached to the rear surfaces of the respective LED modules.

Abstract: A method for providing a high in-plane and through-plane thermal conductivity path between a heat producing electronic device and a heat sink is described. A vapor chamber, or other type of heat spreader, is provided that has a substantially flat top copper surface and a substantially flat bottom copper surface. A ceramic submount is also provided, where the submount has a top copper metallization layer patterned for connection to electrodes of a heat-producing die, and where the submount has a bottom copper metallization layer. Prior to a working fluid being introduced into the vapor chamber, and prior to a die being mounted on the submount, the top copper surface of the vapor chamber is diffusion bonded to the bottom copper metallization layer of the ceramic submount under heat and pressure. The working fluid is then introduced into the vapor chamber, and the chamber is sealed. Dies are then mounted on the submount. The bottom of the vapor chamber is then affixed over a heat sink.

Abstract: Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

Abstract: An LED display with a reduced thickness is described. In one embodiment, the LED display includes a second support plate between a front support plate and a back support plate. The second support plate enables the front support plate to be thinner than if the second support plate was not included. The second support plate increases the distance between an LED chip and a light exit surface thereby allowing the front support plate thickness to be reduced by about the thickness of the second support plate. In one embodiment, the second support plate allows the thickness of an LED display to be thinner. The second support plate adds structural integrity to a back support plate. Therefore, the back support plate can be thinner, and thickness of the LED display can be reduced.

Abstract: A light emitting diode backlight (LED) unit includes: a substrate having a plurality of divided areas; a plurality of LEDs disposed on the substrate; and an LED driver supplying a drive power to the plurality of LEDs disposed in at least two of the plurality of divided areas, wherein at least a part of the plurality of LEDs disposed in one of the plurality of divided areas is electrically connected to each other.

Abstract: An LED diode package includes a heat connecting part for mounting a light emitting part on an upper surface thereof, frames electrically connected to the light emitting part while holding the heat connecting part and a molded part fixing the heat connecting part and the frames together. The light emitting part generates light in response to current applied thereto, and the upper surface of the heat connecting part is protruded beyond an upper surface of the molded part to a predetermined height. This can optimize the unique beam angle of the light source thereby to maximize lighting efficiency as well as prevent overflow of the encapsulating material in the assembling process of the lens, which may otherwise soil adjacent components.

Abstract: Disclosed herein is a color LED driver, which is capable of being implemented by a compact structure without a feedback structure and accompanying a small size and low cost, by directly connecting a negative temperature coefficient (NTC) thermistor to a driving current path of a color LED applied to an LCD backlight to compensate a characteristic variation of the LED due to a variation in a temperature.

Abstract: A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions

Abstract: Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrificial layer, forming a plurality of masking dots of a metal nitride on the passivation layer, laterally epitaxially growing a nitride-based semiconductor layer on the passivation layer using the masking dots as masks, forming a semiconductor device on the nitride-based semiconductor layer, and wet etching the sacrificial layer to separate and/or remove the substrate from the semiconductor device.

Abstract: Disclosed herein is a color LED driver, which is capable of being implemented by a compact structure without a feedback structure and accompanying a small size and low cost, by directly connecting a negative temperature coefficient (NTC) thermistor to a driving current path of a color LED applied to an LCD backlight to compensate a characteristic variation of the LED due to a variation in a temperature.

Abstract: A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate.

Abstract: Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

Abstract: A solid state lighting device includes at least one emitter and a forged heatsink arranged to receive and dissipate heat generated by emitter(s). The heatsink may have a thickness and/or profile that varies in at leats two dimensions. Fabrication of a solid state lighting device may include providing a forged heatsink, and mounting at least one solid state emitter in thermal communication with the heatsink. A space or object may be illuminated with a lighting device including at least one solid state emitter and a forged heatsink. The lighting device may be operated responsive to at least one sensor arranged to sense temperature and/or at least one characteric of light emitted by the emitter(s).

Abstract: There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

Abstract: A white light emitting device capable of expanding the wavelength range of a blue LED used for realizing white light. The white light emitting device according to the present invention includes a blue LED and a mixture of orange phosphor and green phosphor disposed above the blue LED.

Abstract: A new SMD (surface mount devices) package design for efficiently removing heat from LED Chip(s) is involved in this invention. Different from the regular SMD package, which electrical isolated materials like Alumina or AlN are used, the substrate material here is metal like Copper, Aluminum and so on. Also, different from regular design, which most time only has one LED chip inside, current design will at least have two or more LED chips (or chip groups) in one package. All chips are electrical connected via metal blocks, traces or wire-bond. This type of structure is generally fabricated via chemical etching and then filled with dielectric material inside to form a strong package. Because the thermal conductivity of the metal is much higher than the ceramics, the package thermal resistance is much lower than the ceramics based package. Also, the cost of the package is much lower than ceramics package. Moreover, emitting area in one package is much larger than the current arts.

Abstract: Climate control unit with an interior section containing a storage space and with a closable access opening to the storage section whereby at least one part of the interior section is separated and sealed against the rest of the interior section thus forming a separate germ-proof section. The division takes place at least in part by a membrane that is permeable for water vapor and gas but impermeable for microorganisms.

Abstract: A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

Abstract: There is provided a backlight unit for an LCD device. The backlight unit, disposed under a liquid crystal panel and emitting light to a liquid crystal panel, includes a lightguide plate, a light emitting diode (LED) array disposed at an edge of the lightguide plate and including a plurality of LED blocks each including at least one LED emitting white light, and a controller controlling a current signal applied to each of the plurality of LED blocks to regulate the luminance of each LED block. Accordingly, the backlight unit can be provided, which is capable of contributing to manufacturing thinner and larger products and realizing effective local dimming by using an LED disposed at an edge of the lightguide plate.