Patents Assigned to Lehigh University
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Publication number: 20120217472Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.Type: ApplicationFiled: December 8, 2011Publication date: August 30, 2012Applicant: Lehigh UniversityInventors: Nelson Tansu, Xiaohang Li, Hongping Zhao, Guangyu Liu, James Foster Gilchrist, Pisist Kumnorkaew
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Patent number: 8226745Abstract: Provided herein are new compact and miniature oxygen concentrator apparatus, as well as methods incorporating use of the apparatus. The apparatus and methods utilize selected cycle times, adsorbent specifications and novel conditions to produce a fast Pressure Swing Adsorption (“PSA”) system. The oxygen concentrator apparatus and methods herein have significant utility in the fields of biotechnology, engineering, and medicine. A particularly advantageous use of this invention is as a “snap on” portable oxygen concentrator, where piped compressed air is already available such as in civil and military hospitals, ambulances, air craft cabins, mobile fish tanks, etc. Those embodiments eliminate the need for dedicated moving machinery (blower, compressor, vacuum pump) normally associated with a conventional PSA oxygen concentrator.Type: GrantFiled: April 28, 2010Date of Patent: July 24, 2012Assignee: Lehigh UniversityInventors: Chai Siew-Wah, Shivaji Sircar, Mayuresh V. Kothare
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Patent number: 8220404Abstract: Boats and suspensions are provided, wherein the boat includes at least one hull, and at least one sponson, the at least one hull and at least one sponson connected by a shock-absorbing suspension member. The suspension greatly reduces the accelerations of the main hull, such that the hull accelerations are generally substantially less than the accelerations of the sponsons at selected speeds.Type: GrantFiled: May 5, 2009Date of Patent: July 17, 2012Assignee: Lehigh UniversityInventor: Joachim L. Grenestedt
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Patent number: 8187890Abstract: Methods for rapid sensing of dissolved toxic heavy metals use a hybrid inorganic material (“HIM”), which is synthesized from hydrated iron oxide (“HFO”) and calcium magnesium silicate. HIM thus synthesized is used in sensing dissolved toxic heavy metals. Water containing toxic heavy metals (e.g., lead, copper, zinc, nickel, etc.) is passed through a sorbent bed of HIM, whereupon it shows a sharp drop in pH after a certain length of time. The presence of HFO and calcium magnesium silicates in HIM synergistically provide a precipitous drop in pH, which is characteristic of the concentration and type of toxic heavy metal. Therefore, observing a change in pH indicates the presence and identity of heavy metal ions in a test water sample.Type: GrantFiled: June 4, 2008Date of Patent: May 29, 2012Assignee: Lehigh UniversityInventors: Arup K. Sengupta, Prasaun K. Chatterje
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Patent number: 8183933Abstract: A circuit includes a first transistor in a common-collector configuration and a heterojunction bipolar transistor (HBT) in a common-emitter configuration. The first transistor has a base coupled to an input node for receiving a pulsed signal. A collector of the first transistor is coupled to a first voltage source node. A base of the HBT is coupled to an emitter of the first transistor. A collector of the HBT is coupled to a second voltage source node configured to bias the HBT normally off. The HBT operating isothermally when the pulsed signal has a short-pulse width and a low duty cycle. The first transistor drives the HBT when the pulsed signal is received at the base of the first transistor to output an amplified pulsed signal at the collector of the HBT.Type: GrantFiled: April 3, 2009Date of Patent: May 22, 2012Assignee: Lehigh UniversityInventors: Subrata Halder, Renfeng Jin, James C.M. Hwang
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Publication number: 20120034286Abstract: This invention discloses a stabilized biosolids composition and a method for the stabilization of biosolids. It entails the use of a chemically and biologically reactive material, in the form of ultrafine iron particles. The nanometer-sized iron particles are capable of degrading odorous organosulfur compounds, transforming persistent and toxic organic pollutants such as PCBs and chlorinated pesticides, inhibiting the growth of pathogens by increasing pH and maintaining the increased pH of the stabilized biosolids, immobilizing toxic metal ions such as mercury and lead, and improving the overall quality of biosolids for land application and plant growth.Type: ApplicationFiled: August 29, 2011Publication date: February 9, 2012Applicant: Lehigh UniversityInventor: Wei-Xian Zhang
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Patent number: 8076667Abstract: A tight emitting device comprises at least one p-type layer and at least one n-type layer and a microlens array surface. A method for improving light efficiency of a light emitting device, comprises depositing polystyrene microspheres by rapid convection deposition on surface of light emitting device; depositing a monolayer of close-packed SIO2 microspheres onto the polystyrene microspheres; and heal treating to convert the polystyrene microspheres into a planar microlayer film to provide a surface comprising substantially two-dimensional (2D) hexagonal close-packed SIO2 colloidal microsphere crystals partially imposed into a polystyrene monolayer film.Type: GrantFiled: December 24, 2007Date of Patent: December 13, 2011Assignee: Lehigh UniversityInventors: Nelson Tansu, Yik Khoon Ee, James F. Gilchrist, Pisit Kumnorkaew, Ronald A. Arif
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Patent number: 8071642Abstract: Water-soluble dimethyl amino ethyl ether psoralens useful in the treatment of proliferative skin disorders, microbial infections and diseases, disorders of the blood and bone marrow of mammals and in microbiocidal compositions for sterilization of blood and blood products and surgical implants and inhibition of microbial growth in industrial applications are provided.Type: GrantFiled: June 27, 2008Date of Patent: December 6, 2011Assignees: Rutgers, The State University of New Jersey, University of Medicine and Dentistry of New Jersey, Lehigh UniversityInventors: Jeffrey D. Laskin, Diane E. Heck, Ned D. Heindel
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THERMOELECTRIC MATERIALS BASED ON SINGLE CRYSTAL AlInN-GaN GROWN BY METALORGANIC VAPOR PHASE EPITAXY
Publication number: 20110240082Abstract: The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).Type: ApplicationFiled: December 8, 2010Publication date: October 6, 2011Applicant: Lehigh UniversityInventors: Nelson Tansu, Hua Tong, Jing Zhang, Guangyu Liu, Gensheng Huang -
Patent number: 8030641Abstract: A gallium nitride-based device has ? first GaN layer and ? type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer, wherein the InGaN comprises ? graded molar In concentration.Type: GrantFiled: December 19, 2007Date of Patent: October 4, 2011Assignee: Lehigh UniversityInventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee
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Patent number: 8007626Abstract: A method of bonding a capillary tube made of a thermally deformable material to a passage in a glass wafer comprising the steps of treating the surface of the capillary tube to render the surface bondable and wettable by a conventional epoxy resin; inserting a support inside the capillary to prevent inward deformation of the capillary during subsequent fabricating steps; inserting the supported capillary inside the port on the wafer; heating an end of the capillary proximate a bottom portion of the port to effect melting of a portion of the heated end of the capillaries; moving the melted end of the capillary into contact with a wall of the port at a desired location for the capillary in the port, thus forming a temporary seal between the capillary and the wall of the port; and introducing an epoxy around the capillary to bind the capillary to the wafer.Type: GrantFiled: April 22, 2009Date of Patent: August 30, 2011Assignee: Lehigh UniversityInventors: Ashish V. Pattekar, Mayuresh V. Kothare
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Publication number: 20110204328Abstract: A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 ? or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.Type: ApplicationFiled: December 15, 2010Publication date: August 25, 2011Applicant: Lehigh UniversityInventors: Nelson Tansu, Hongping Zhao, Guangyu Liu, Gensheng Huang
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Patent number: 7986186Abstract: A power amplifier includes a LDMOS transistor having a source, a drain, a control gate and a shielding electrode positioned between the control gate and the drain, and means for adaptively biasing the drain and shielding electrode power information for a RF signal.Type: GrantFiled: December 13, 2007Date of Patent: July 26, 2011Assignee: Lehigh UniversityInventors: Marvin Nii Nartey Marbell, James Cheng-Min Hwang
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Publication number: 20110155999Abstract: A conventional semiconductor LED is modified to include a microlenslayer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.Type: ApplicationFiled: December 8, 2010Publication date: June 30, 2011Applicant: Lehigh UniversityInventors: Nelson Tansu, James F. Gilchrist, Yik-Khoon Ee, Pisist Kumnorkaew
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Publication number: 20110147702Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 ? and 24 ? thick, respectively.Type: ApplicationFiled: December 14, 2010Publication date: June 23, 2011Applicant: Lehigh UniversityInventors: Nelson Tansu, Hongping Zhao, Guangyu Liu, Ronald Arif
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Publication number: 20110133157Abstract: A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.Type: ApplicationFiled: December 8, 2010Publication date: June 9, 2011Applicant: Lehigh UniversityInventors: Nelson Tansu, Hongping Zhao, Jing Zhang, Guangyu Liu
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Patent number: 7919069Abstract: Provided herein is a hydrothermal process for the rapid synthesis of inorganic nanomaterials (e.g., nanofibers) containing sodium, bismuth, titanium, and oxygen, as well as new compositions made thereby. The process involves heating an aqueous solution or suspension of suitable salts of aforementioned elements at elevated temperature and pressure under constant stirring in a hermetically sealed vessel for a predetermined amount of time (e.g., less than two hours). The powder thus obtained contains nanofibers of rectangular cross-section, with the smallest fibers typically have a cross section of 16 nm×40 nm. Example fibers made by such processes have an aspect ratio exceeding 200.Type: GrantFiled: June 13, 2008Date of Patent: April 5, 2011Assignee: Lehigh UniversityInventor: Animesh Kundu
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Patent number: 7892739Abstract: The invention relates to stretch measurements of nucleic acids and correlating those measurements to the extent of double- and single-stranded content of a nucleic acid of interest, and to compositions, systems, and devices related thereto. In preferred embodiments, one performs the stretch or elasticity measurements under conditions such that one can determine a nucleic acid sequence or the presence of an oligonucleotide in a sample.Type: GrantFiled: March 27, 2008Date of Patent: February 22, 2011Assignee: Lehigh UniversityInventor: Dmitri Vezenov
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Patent number: 7844352Abstract: A system for embedding real-time Model Predictive Control (MPC) in a System-on-a-Chip (SoC) devices is provided. In the system, a microprocessor is connected to an auxiliary unit or application-specific matrix coprocessor. The microprocessor can control the operation of the MPC algorithm, i.e., carry out the tasks of input/output for the MPC algorithm, initialize and send the appropriate commands to auxiliary unit and receive back the optimal control moves or instructions from auxiliary unit. The auxiliary unit can operate as a matrix coprocessor by executing matrix operations, e.g. addition, multiplication, inversion, etc., required by the MPC algorithm.Type: GrantFiled: October 22, 2007Date of Patent: November 30, 2010Assignee: Lehigh UniversityInventors: Panagiotis Vouzis, Leonidas Bleris, Mark G. Arnold, Mayuresh V. Kothare
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Patent number: 7842531Abstract: A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect.Type: GrantFiled: March 5, 2009Date of Patent: November 30, 2010Assignee: Lehigh UniversityInventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee