Abstract: A pixel structure comprising an N-side light emitting surface, several reflectors and several light emitting elements is provided. N is a nature number equal to or greater than 3. The light emitting surface has a first normal line. The reflectors surround peripherals of the light emitting surface. Each reflector, which correspondingly connects with a side of the light emitting surface, is connected to its adjoining reflectors and comprises a first reflecting portion and a second reflecting portion having a second normal line and a third normal line, respectively. The second and the first normal lines intercross to form an acute angle ?, and the third and the first normal lines intercross to form an obtuse angle ?. The lights emitted by the light emitting elements are reflected by the second reflecting portion of the reflectors so that the lights are directed towards the light emitting surface.

Abstract: A lamp with functions of adjusting an illumination direction is disclosed. A substrate is disposed on a base and includes a through groove. At least one light source is disposed on the substrate. An electronic control unit is disposed in the base. A telescopic member is disposed in the base and is connected to the electronic control unit. The electronic control unit drives the telescopic member to elongate and shorten. A flexible light guiding sheet is connected to the telescopic member. When the electronic control unit drives the telescopic member to elongate, the flexible light guiding sheet protrudes onto the substrate via the through groove of the substrate and deflects toward a specific direction, changing the illumination direction of the light source.

Abstract: A method of manufacturing a light emitting diode (LED) substrate includes following steps: providing a nano-patterned substrate, which has a plurality of convex portions and a plurality of first concave portions that are spaced apart from each other, wherein each first concave portion has a depth (d1); forming a plurality of protection structures to cover each convex portion, and exposing a bottom surface of each first concave portion; performing an anisotropic etching processing to etch the bottom surface of each first concave portion which is not covered by the protection structure so as to form a plurality of second concave portions having a depth (d2), and d2 is greater than d1.

Abstract: The disclosure provides a light-emitting diode (LED) and a method for manufacturing the same. The LED includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first current spreading layer, a current blocking having a plurality of nitrogen vacancies, and a second current spreading layer, wherein the second spreading layer includes a current spreading area and a current blocking area. The current blocking area is formed the nitrogen vacancies by high power sputtering on the current blocking area of the second semiconductor layer, so as to increase the resistance of the current blocking area and occur the efficiency of current blocking.

Abstract: A light-emitting device comprising a lamp casing, a heat dissipation element and a light-emitting module is provided. A first opening and a second opening are formed on an upper end and a lower end of the lamp casing respectively. An edge of the lamp casing adjacent to the first opening is bended inward to form a bending portion. The heat dissipation element has several carrying portions separated from each other and arranged in radial-shape, and several fins perpendicular to the carrying portions. Each fin is bended downward and vertically from an edge of the carrying portions and extended toward the second opening. The light-emitting module comprises a substrate and several light-emitting elements. An edge of the substrate leans against the bending portion, such that the light-emitting module is sandwiched between the carrying portions and the e bending portion.

Abstract: A light emitting diode (LED) structure includes a substrate, an LED element, a reverse current protection element, a third conductor, and a fourth conductor. The LED element includes a first N-type semiconductor layer, a first lighting layer, a first P-type semiconductor layer, a first transparent conductive layer, a first electrode, and a second electrode. The reverse current protection element is located on the substrate and surrounds the LED element. The reverse current protection element includes a stack layer, a first conductor, and a second conductor. The stack layer is formed on the substrate by sequentially stacking a second N-type semiconductor layer, a second lighting layer, and a second P-type semiconductor layer. The third conductor is electrically connected to the first conductor and the second electrode. The fourth conductor is electrically connected to the second conductor and the first electrode.

Abstract: A light emitting device comprising a carrier, a first and a second reflective layers, a first and a second micro-structures, a LED package device, a light guide device and a light directing cover is provided. The carrier comprises an upper plate and a lower plate each having a first surface and a second surface. The lower plate has a through hole. The first and second reflective layers are formed on the edges of the second surface of the upper plate and the first surface of the lower plate, respectively. The first and second micro-structures are formed on the edges of the second surface of the upper plate and the first surface of the lower plate, respectively. The LED package device is disposed below the through hole. The light guide device is connected to the LED package device. The light directing cover surrounds the light guide device.

Abstract: A light-emitting device comprising a string-shape circuit board, several light-emitting elements, a first terminal pair and a second terminal pair is provided. The string-shape circuit board has a first side and a second side. The first terminal pair and the second terminal pair are disposed on the first side and the second side respectively, and are electrically connected to the light-emitting elements. The first terminal pair comprises a first base, a second base, a first positive electrode and a first negative electrode. The first positive electrode and the first negative electrode are pivotally connected to the first base and the second base respectively. The second terminal pair comprises a third base, a fourth base, a second positive electrode and a second negative electrode. The second positive electrode and the second negative electrode are pivotally connected to the third base and the fourth base respectively.

Abstract: A light emitting device comprising a carrier board, a first group of light emitting elements, a second group of light emitting elements and a driver circuit. The first group of light emitting elements includes a plurality of first LEDs disposing on the carrier board and are used for emitting a first color temperature light. The second group of light emitting elements includes a plurality of second LEDs disposing on the carrier board and are used for emitting a second color temperature light. The first LEDs and the second LEDs are disposed in an alternative arrangement. The driver circuit output a first and a second driving current to drives the first LED and the second LED respectively. When the first driving current is the maximum, the second driving current is the minimum, and vice versa. The minimum of the first driving current and the second driving current is not zero.

Abstract: An LED lighting module includes a support board with a first LED and a second LED thereon. The wavelength of light emitted by the first LED is different from that of light emitted by the second LED. The height of the first LED is different from that of the second LED for preventing the emitting light of the first LED absorbed by the wavelength conversion layer of the second LED.

Abstract: A light emitting diode structure is provided. The light emitting diode structure comprises a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.

Abstract: A light emitting diode structure includes a patterned substrate, an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer. Plural protruding portions are formed on a surface of the substrate. A horizontal projection of each of the protruding portions on the surface of the substrate has a projection width W1. An interval width W2 is formed between every two adjacent protruding portions. A vertical height h is formed between a peak of each of the protruding portions and the horizontal surface of the surface of the substrate. The value of {[(W1)/2+W2]/h} is substantially equal to tan 46°. The N-type semiconductor layer is located on the substrate and covers the protruding portions. The light emitting layer is located on the N-type semiconductor layer. The P-type semiconductor layer is located on the light emitting layer.

Abstract: A light fixture includes a light guide member, a light bar, and two conductive pins. A cavity is formed on a bottom portion of the light guide member, and two engaging groove are respectively at two sides of the bottom portion. The light bar is arranged under the bottom portion of the light guide member, and a plurality of light emitting units are disposed on a surface of the light bar. Two sides of the light bar are respectively fixed in the two engaging grooves, such that the emitting units are located in the cavity. The two conductive pins protrude from each end of the light guide member, and are electrically connected to the light emitting units.

Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.

Abstract: A lighting device is provided and includes a light guide plate including a plurality of light incident surfaces and two light emitting surfaces, a plurality of edge frames, and at least one light source. Each of the edge frames includes a main body including an accommodating groove and an opening, first and second clamp members, and first and second fixing elements respectively located on first and second ends of the main body. The light emitting surfaces are clamped by the first and second clamp members of each edge frame. Each of the light incident surfaces is inserted in the main body of one of the edge frames through the opening and accommodated in the accommodating groove. The light source is located in the accommodating groove of one of the edge frames and adjacent to the corresponding light incident surface.

Abstract: The disclosure provides a light-emitting diode (LED) package structure, including: a lead frame; at least two light-emitting diode chips having different light-emitting wavelengths disposed on the lead frame; an encapsulant disposed over the lead frame and covering the light-emitting diode chips, wherein the encapsulant has a first concave portion; and an optical glue disposed in the first concave portion, wherein the optical glue has a plurality of scattering particles to uniformly mix the lights of different wavelengths emitted by the light-emitting diode chips.

Abstract: A light emitting diode includes a semiconductor epitaxial stack structure, a first transparent conductive layer and at least one second transparent conductive layer. The semiconductor epitaxial stack structure includes a first semiconductor layer, an active layer and a second semiconductor layer. The active layer is disposed on a portion of the second semiconductor layer. The first semiconductor layer is disposed on the active layer. The first transparent conductive layer is disposed on the first semiconductor layer, and includes plural first crystalline particles, wherein the average size thereof is d1. The second transparent conductive layer is disposed on the first transparent conductive layer, and includes plural second crystalline particles, wherein the average size thereof is d2, and d1 is greater than d2.

Abstract: An LED package is disclosed, which includes a heat dissipation plate, a composite structure, an LED chip, and an encapsulant. The heat dissipation plate has a chip bonding area, a circuit area, and a first dam disposed at the boundary between the chip bonding area and the circuit area, wherein the first dam is formed by punching or bending the heat dissipation plate. The composite structure is disposed on the circuit area. The LED chip which is disposed on the chip bonding area is electrically connected to the composite structure and covered by the encapsulant. Also a light-emitting device using the LED package is disclosed.

Abstract: A LED package structure including a carrier and a light emitting diode (LED) chip is provided. The LED chip includes a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer. The substrate has a first surface and a second surface opposite to the first surface. The patterned structure is formed on the second surface of the substrate. The first semiconductor layer is disposed on the first surface of the substrate. The active layer is disposed on a portion of a surface of the first semiconductor layer, and other portion of the surface not covered by the active layer is exposed. The second semiconductor layer is disposed on the active layer. The LED chip is disposed on the carrier by way of flip-chip so that the first and the second semiconductor layers face towards the carrier.

Abstract: A light-emitting diode (LED) light tube driving circuit includes a LED driver and a rectifier unit. The LED driver is configured for receiving an operating voltage to drive at least one LED. The rectifier unit has a first input/output terminal and a second input/output terminal and is electrically coupled to an external alternating-current power source selectively by the first input/output terminal and the second input/output terminal. The rectifier unit is configured for providing the operating voltage to the LED driver. The rectifier unit further includes a first rectifier diode and a second rectifier diode.