Abstract: The disclosure provides a heat sink for electrical elements and a light-emitting device containing thereof. The heat sink includes a radiating substrate and at least one hollow radiating channel. In which, the hollow radiating channel is horizontally embedded in the radiating substrate, and has two openings disposed on the same site or the opposite sites of the radiating substrate, so that gas may flow in the hollow radiating channel and remove heat of the radiating substrate. And a light-emitting device containing the heat sink is also provided.

Abstract: A lens device and a light source module using the same are provided. The lens device comprises a lens and a patterned light shielding layer. The lens has a middle light emitting surface and a periphery light emitting surface surrounding the middle light emitting surface. The patterned light shielding layer is formed on the periphery light emitting surface of the lens.

Abstract: A light emitting diode structure is provided. The light emitting diode structure includes a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.

Abstract: A lamp tube is provided, including a cover, a heat sink, and a light bar. The cover includes a first connection portion and a second connection portion opposite to each other. The heat sink includes a base, a first supporting portion, and a second supporting portion extended upwardly from the base. The first and second supporting portions respectively include a first recess and a second recess formed on the outer sides thereof. The cover is joined with the heat sink to form a tube structure by respectively engaging the first and second connection portions with the first and second recesses. The light bar is disposed on a surface formed by a first end and a second end of the first and second supporting portions which are distant from the base.

Abstract: A control device including a first switch, a control unit and a second switch is provided. When the first switch is turned on, a power signal generated by a power supply is transmitted to a lighting load via the first switch. The brightness of the lighting load is gradually increased or reduced as time increases. When the first switch is turned on, the control unit executes a countdown according to a time value. Upon finishing the countdown, the control unit generates a trigger signal and simultaneously the brightness of the lighting load is at a set value. When receiving the trigger signal, the second switch stops transmitting the power signal from the first switch to the lighting load at first and then transmits the power signal from the first switch to the lighting load such that the brightness of the lighting load keeps at the set value.

Abstract: A light-emitting diode is provided. The light-emitting diode includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A P-type electrode includes a body part and an extension part, wherein the body part is disposed on a corner of an upper surface of the P-type semiconductor layer and the extension part extends from the body part onto the N-type semiconductor layer along a sidewall of the P-type semiconductor layer adjacent to the N-type semiconductor layer. An N-type electrode is disposed on the N-type semiconductor layer. Moreover, a current blocking layer is disposed under the P-type electrode. A transparent conductive layer is disposed on a partial upper surface of the P-type semiconductor layer.

Abstract: A light emitting diode (LED) device includes a transparent substrate, a first reflection layer, a LED chip, a positive electrode, a negative electrode and a wavelength-converting layer. The LED chip is disposed on a surface of the transparent substrate, and the first reflection layer is disposed between the LED chip and the transparent substrate. The positive electrode and the negative electrode are disposed on an end portion of the transparent substrate and are electrically connected with the LED chip. The wavelength-converting layer covers the first reflection layer and the LED chip.

Abstract: A light-emitting diode (LED) packaging structure is provided, which includes a LED stacked layer, a first silicon substrate and a second silicon substrate. The first and second silicon substrates are respectively disposed on two opposite surfaces of the LED stacked layer. The first and second silicon substrates respectively have at least one first hollow portion and at least one second hollow portion, so as to expose the surfaces of a portion of the LED stacked layer. Light emitted by a light-emitting layer may go out through the first and second hollow portions. A method for manufacturing the LED packaging structure is also provided.

Abstract: A lamp tube is provided, including a cover, a heat sink, a reflecting structure, a light bar, and a driving circuit. The cover is joined with the heat sink to form a tube body. The heat sink includes a first portion and a second portion symmetrical to a reference plane. The reflecting structure is disposed above the second portion, wherein the reflecting structure and the second portion of the heat sink define a receiving space with the driving circuit disposed therein. The light bar is disposed on the first portion of the heat sink.

Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.

Abstract: A light-emitting diode (LED) driving circuit is configured for driving at least one group of LEDs. The LED driving circuit includes a constant current source, a pulse width modulation (PWM) element, and at least one pulse frequency modulation (PFM) element. The constant current source is configured for generating a current signal with a constant current value; the PWM element is electrically connected to the constant current source and configured for modulating the current signal to generate a PWM signal corresponding to the current signal; the PFM element is electrically connected between the PWM element and the LED and configured for modulating a frequency width of the PWM signal to generate at least one PFM signal for driving the LED.

Abstract: An illumination device includes a light-emitting diode (LED) lamp and a LED dimming circuit. The LED dimming circuit includes a power converting module, a sensing unit and a dimming module. The power converting module is used to generate a driving voltage to drive the LED lamp. The sensing unit is used to generate a sensing voltage signal. The dimming module includes an input interface, a dimming signal generator and an isolating unit. The input interface is used to receive a dimming control signal. The dimming signal generator is used to output a first feedback signal based on the sensing voltage signal and the dimming control signal. The isolating unit is used to receive the first feedback signal and output a second feedback signal to the power converting module so as to control a driving current.

Abstract: A temperature and illumination adjusting system, including: a temperature and illumination adjusting device, including a CPU, receiving a temperature value and an illumination value, and generating a first PWM value and a second PWM value according to a first formula and a second formula; and a communication unit, outputting the first PWM value and the second PWM value; and a lamp device, including a lamp communication unit, receiving the first PWM value and the second PWM value; a first light module; a second light module; a first PWM driving unit, driving the first light module with the first PWM value; a second PWM driving unit, driving the second light module with the second PWM value, wherein the outputs of the first light module and the second light module have different color temperature.

Abstract: The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.

Abstract: A light emitting device comprising a first frame, a light bar and a light guide plate is provided. The first frame has a groove which has a bottom plane, two inner walls, and an opening. The light bar disposed in the groove comprises a substrate having a lower surface attached to the bottom plane and an upper surface having several light sources. The light guide plate has a light emitting surface and a light incident surface. The light incident surface perpendicular and adjoining to the light emitting surface has several abutting portions. The light guide plate is inserted to the groove via the opening. The emitting light of the light source entering the light guide plate is guided by the light guide plate to be emitted off the light emitting surface. The abutting portions abut to the upper surface, so that the light bar is fixed in the groove.

Abstract: A light-emitting diode (LED) chip is disclosed. The chip includes a light-emitting diode and an electrode layer on the light-emitting diode. The electrode layer includes a reflective metal layer. The reflective metal layer includes a first composition and a second composition. The first composition includes aluminum or silver, and the second composition includes copper, silicon, tin, platinum, gold or a combination thereof. The weight percentage of the second composition is greater than 0% and less than 20%.

Abstract: A light-emitting device includes a power module, a first light-emitting module, a second light-emitting module, a third light-emitting module, and a control module. The power module is configured to rectify an AC voltage for providing a periodic driving voltage. The first, second, third light-emitting modules are connected in series. The control module is configured to make the first, second, third light-emitting modules being driven by the driving voltage in response to different driving stages in a cycle period of a driving voltage. An average-diode-junction-area of the first light-emitting module is different from an average-diode-junction-area of the second light-emitting module or an average-diode-junction-area of the third light-emitting module.

Abstract: A light emitting diode structure includes a first contact electrode, a first insulating layer, a second contact electrode, a second insulating layer, a first barrier layer, a second barrier layer, a first illuminant epitaxial structure, and a second illuminant epitaxial structure. The first contact electrode includes a first protruding portion. The first insulating layer covers the first contact electrode and exposes a top of the first protruding portion. The second contact electrode is located on the first insulating layer and includes a second protruding portion. The second insulating layer covers the second contact electrode and exposes a top of the second protruding portion. The first barrier layer is located on the second insulating layer and is electrically connected to the second contact electrode. The second barrier layer is located on the second insulating layer.

Abstract: A LED device is provided. The LED comprises a frame, a housing, a LED chip and a protection component. The frame comprises a first lead frame and a second lead frame disposed along a first direction and isolated from each other. The housing partially covers the first and second lead frames, and has a receiving portion exposing parts of the surfaces of the first and second lead frames. The LED chip is disposed in the receiving portion on the exposed surface of the first lead frame, and electrically connected to the first and second lead frames. The protection component is disposed on a surface of the second lead frame that is covered by the housing and electrically connected to the first lead frame. None of the sides of a vertical projection of the protection component on the second lead frame is parallel or perpendicular to the first direction.

Abstract: An electrode structure includes a first diffusion barrier layer, an aluminum reflective layer formed over the first diffusion barrier layer. The aluminum reflective layer has a thickness from about 500 angstroms (?) to less than 2,000 ?, a second diffusion barrier layer formed over the aluminum reflective layer, and an electrode layer overlying the second diffusion barrier layer. The electrode structure is applicable in a light emitting diode device.