Abstract: Phosphor-converted LED side reflectors disclosed herein comprise pigments that are photochemically stable under illumination by light from the pcLED. The pigments absorb light in at least a portion of the spectrum of light emitted by the first phosphor converted LED. The side reflector may also comprise light scattering particles or air voids. The pigments, light scattering particles, or air voids may be homogeneously distributed in the reflector. Alternatively the side reflector may be layered, with the pigments, light scattering particles, or air voids inhomogeneously distributed in the reflector. The side reflector can include phosphor particles.

Abstract: A display, system and method of providing a display are described. The display includes sets of microLEDs. Each set of microLEDs corresponds to one of a plurality of pixels of the display and produces a combination of light that forms a color of the corresponding one of the pixels. Lenses control an emission angle and emission profile of the light emitted by the sets of microLEDs. Each set of microLEDs has a red microLED that emits red light, a green microLED that emits green light, a blue microLED that emits blue light, and another microLED that emits light along a red-green locus. The red-green locus light is selected to enhance efficiency at a white point to compensate for reduced emission from the red microLED dependent on a size of the red microLED.

Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent quantum wells and photo-luminescent active regions in the same wafer. A first group of QWs with shortest emission wavelength is placed between the p- and n-layers of a p-n junction. Other groups of QWs with longer wavelengths are placed outside the p-n junction in a part of the LED structure where electrical injection of minority carriers does not occur. Electroluminescence emitted by the first group of QWs is absorbed by other group(s) and re-emitted as longer wavelength light. The color of an individual die made on the wafer can be controlled by either etching away unwanted groups of longer-wavelength QWs at the position of that die, or keeping them intact. Wavelength-selective mirrors that increase down conversion efficiency may be selectively applied to die where longer wavelength emission is desired.

Abstract: A method of manufacturing an augmented LED array assembly is described which comprises providing an LED array assembly configured for inclusion in an LED lighting circuit, the LED array assembly comprising a micro-LED array mounted onto a driver integrated circuit, the driver integrated circuit comprising contact pads configured for electrical connections to a circuit board assembly; providing an essentially planar carrier comprising a plurality of contact bridges, each contact bridge extending between a first contact pad and a second contact pad; and mounting the contact bridge carrier to the LED array assembly by forming solder bonds between the first contact pads of the contact bridge carrier and the contact pads of the driver integrated circuit.

Abstract: Various embodiments include apparatuses and methods enabling a wireless control apparatus for an LED array. In one example, a control apparatus includes a wireless module to receive a signal from a wireless control-device. The wireless signal may include signals related to a desired CCT value and a Duv value. A control unit is coupled to the wireless module to translate signals received from the wireless module. The control unit is also coupled to the LED array and to an LED driver. The control unit receive powers for the LED array from the LED driver and provides the power to the LED array in a manner based on the translated signals. A dimmer emulator is coupled to the control unit to provide one or more control signals to the LED driver. Other apparatuses and methods are described.

Abstract: Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.

Abstract: Techniques and devices are provided for sensing image data from a scene and activating primary light sources based on information sensed from the scene. Subsets of a plurality of primary light sources may be activated to emit sensing spectrum of light onto a scene. Combined image data may be sensed from the scene while the subsets of the plurality of primary light sources are activated. Reflectance information for the scene may be determined based on the combined image data and combined sensing spectra. Spectrum optimization criteria for the primary light sources may be determined based on the reference information and a desired output parameter provided by a user or determined by a controller. The plurality of primary light sources may be activated to emit a lighting spectrum based on the spectrum optimization criteria.

Abstract: A lighting device includes a first LED configured to emit a first light, a second LED configured to emit a third light, a first phosphor disposed over the first LED and second LED, and arranged to absorb a portion of the first light and in response emit a second light of a longer wavelength than the first light, and a second phosphor disposed over the second LED, the second phosphor arranged to absorb a portion of the third light and in response emit a fourth light of a longer wavelength than the third light, and the fourth light exits the second phosphor into the first phosphor, and both the second light and fourth light exit the lighting device though the first phosphor.

Abstract: Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.

Abstract: An optical coupling structures are disposed on light output surfaces of semiconductor LEDs of a miniLED or microLED array to facilitate coupling of light emitted by the semiconductor LEDs through the light output surfaces. The optical coupling structures comprise light scattering particles and/or air voids embedded in or coated with a thin layer of a material that has an index of refraction close to or matching the index of refraction of the material forming the light output surface of the semiconductor LEDs.

Abstract: Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.

Abstract: A centering ring for an LED retrofit lamp is described. The lamp includes a ring-shaped body that includes an outer ring and an opening in a central region of the ring-shaped body that receives the LED retrofit lamp. The lamp also includes a recess formed in the outer rim of the ring-shaped body in at least two locations.

Abstract: A semiconductor light-emitting device includes a junction or active layer between doped semiconductor layers coextensive over a contiguous device area, corresponding sets of electrical contacts connected to the semiconductor layers, and multiple nanostructured optical elements at a surface of one semiconductor layer opposite the other semiconductor layer. Composite electrical contacts of one set include a conductive layer, a transparent dielectric layer between the conductive and semiconductor layers, and vias through the dielectric layer connecting the conductive and semiconductor layers. The nanostructured elements redirect light, propagating laterally in optical modes supported by the semiconductor layers, to exit the device. The composite electrical contacts can be independent and define independently addressable pixel areas of the device. The nanostructured elements and thin semiconductor layers can yield high contrast between adjacent pixel areas without trenches between them.

Abstract: This specification discloses pcLEDs in which the wavelength converting structure comprises one or more layers of phosphor particles disposed on a transparent substrate at high packing density. The particles are coated with an inorganic non-absorbing layer which mechanically stabilizes the phosphor particle layers and provides a thermally conductive connection between the phosphor particles. The wavelength converting structure is attached to a semiconductor LED die with the transparent substrate of the wavelength converting structure facing away from the die by a thin glue layer that bonds a light emitting surface of the die to the phosphor particle layers. Methods for fabricating such pcLEDs are also disclosed.

Abstract: LED arrays comprise patterned reflective grids that enhance the contrast ratio between adjacent pixels or adjacent groups of pixels in the array. The pattern on the reflective grid may also improve adhesion between the reflective grid and one or more layers of material disposed on and attached to the reflective grid. The reflective grid may be formed, for example, as a reflective metal grid, a grid of dielectric reflectors, or a grid of distributed Bragg reflectors (DBRs). If formed as a metal grid, the reflective grid may provide electrical contact to one side of the LED diode junctions. This specification also discloses fabrication processes for such LED arrays.

Abstract: A semiconductor light-emitting device includes a junction between doped semiconductor layers, a first set of multiple independent contacts connected to a first doped layer and a second set of one or more contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, enabling differing corresponding via currents to be applied to the first doped layer through the vias independent of one another. A spatial distribution of via currents among the multiple vias can be selected to yield a corresponding spatial distribution of emission intensity. Alteration of the via current distribution results in corresponding alteration of the emission intensity distribution; such alterations can be implemented dynamically.

Abstract: A LED controller for an LED pixel array includes a serial interface to an external data bus, along with an address generator connected to the serial interface and the LED pixel array. An image frame buffer is connected to the interface to receive image data and further connected to the address generator to receive an image frame buffer address. A command and control module is connected to the serial interface and configured to modify image frame buffer output signals. A calibration data storage module is connected to the command and control module to store calibration data related to pixel voltage response in the LED pixel array and enable modification of voltage provided by the dynamic power supply at least in part based on the image presented by the LED pixel array.

Abstract: Described are arrays of light emitting diode (LED) devices and methods for their manufacture. An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, the top surface comprising a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. There is a first trench separating the first mesa and the adjacent mesa, n-type metallization in the first trench and in electrical contact with the first color active region and the second color active region of the adjacent mesa, and p-type metallization contacts on the n-type layer of the first mesa and on the p-type layer of the adjacent mesa.

Abstract: This specification discloses a method of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+2y?zSizO4?4y?zN4y+z:EUx(AE=Ca, Sr, Ba; 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: The invention describes a method of controlling a segmented flash (10) having a plurality of flash segments (S1, S2, . . . , Sn), which method comprises the steps of measuring the forward voltages (Vf1, Vf2, . . . , Vfn) of the flash segments (S1, S2, . . . , Sn); and adjusting the brightness of the flash segments (S1, S2, . . . , Sn) on the basis of the measured forward voltages (Vf1, Vf2, . . . , Vfn) to achieve a desired illumination profile (P) for the segmented flash (10). The invention further describes a segmented flash system (1) comprising a segmented flash (10) with a plurality of flash segments (S1, S2, . . . , Sn), wherein each flash segment (S1, S2, . . . , Sn) is arranged to illuminate a portion (20) of a scene (2); and a flash driver (11) adapted to perform the steps of the inventive method to adjust the brightness of the flash segments (S1, S2, . . . , Sn).