Abstract: Various embodiments include apparatuses and methods enabling a wireless control apparatus for an LED array. In one example, a control apparatus includes a wireless module to receive a signal from a wireless control-device. The wireless signal may include signals related to a desired CCT value and a Duv value. A control unit is coupled to the wireless module to translate signals received from the wireless module. The control unit is also coupled to the LED array and to an LED driver. The control unit receive powers for the LED array from the LED driver and provides the power to the LED array in a manner based on the translated signals. A dimmer emulator is coupled to the control unit to provide one or more control signals to the LED driver. Other apparatuses and methods are described.

Abstract: A light-emitting device assembly includes an emitter array of light-emitting elements, a transparent substrate, a structured lens, and an angular filter. The emitter array emits from its emission surface output light that is transmitted through the substrate, and enables selective activation of and emission from individual elements or subsets of elements of the array. The structured lens is formed on or in the substrate, and comprises micro- or nano-structured elements resulting in an effective focal length less than an effective distance between the structured lens and the emission surface. The angular filter is positioned on or in the substrate or on the emission surface and exhibits decreasing transmission or a cutoff angle with increasing angle of incidence.

Abstract: An array of light emitting devices is mounted on a support surface with the transparent growth substrate (e.g., sapphire) facing up. A photoresist layer is then deposited over the top surface of the growth substrate, followed by depositing a reflective material over the top and side surfaces of the light emitting devices to encapsulate the light emitting devices. The top surfaces of the light emitting devices are then ground down to remove the reflective material over the top surface of the photoresist. The photoresist is then dissolved to leave a cavity over the growth substrate having reflective walls. The cavity is then filled with a phosphor. The phosphor-converted light emitting devices are then singulated to form packaged light emitting devices. All side light is reflected back into the light emitting device by the reflective material and eventually exits the light emitting device toward the phosphor. The packaged light emitting devices, when energized, appear as a white dot with no side emission (e.g.

Abstract: The invention describes an LED lighting arrangement comprising a single-layer carrier comprising a mounting surface, a metal core, and a dielectric layer between the mounting surface and the metal core; at least one LED string comprising a plurality of series-connected LED die packages mounted on the mounting surface, wherein the LED die packages of a string are arranged in a two-dimensional array comprising at least two rows; and at least one micro-via extending through the dielectric layer of the single-layer carrier and arranged to electrically connect the final cathode of an LED string to the metal core of the single-layer carrier. The invention further describes a lighting unit; and a method of manufacturing an LED lighting arrangement.

Abstract: A light converting device comprising: a light converter with a light entrance surface and a light emission surface, wherein the light converter is arranged to convert laser light scanned over the light entrance surface to converted light, wherein a peak emission wavelength of the converted light is in a longer wavelength range than a laser peak emission wavelength of the laser light, a confinement structure enclosing the light converter, wherein the confinement structure is arranged to preserve a geometric shape of the light converter in case of a mechanical failure of the light converter. A laser-based light source comprising such a light converting device and a vehicle headlight comprising such a laser-based light source.

Abstract: A lighting device is described. The lighting device includes a support structure, which includes a central mounting face and at least one first lateral mounting face adjacent the central mounting face and forming an included angle with the central mounting face of 60° to 90°. The device also includes at least one central light emitting element on the central mounting face and in contact with the support structure and at least one first lateral light emitting element on the first lateral mounting face and in contact with the support structure.

Abstract: A lighting device, automotive lighting system and method of manufacturing a light device are described. A lighting device includes a mounting portion, at least one first light emitting element, at least one second light emitting element, and at least one optical component. The mounting portion includes at least a central mounting face and at least one lateral mounting face at an angle with respect to the central mounting face. The at least one first light emitting element is mounted on the central mounting face. The at least one second light emitting element is mounted on the at least one lateral mounting face. The at least one optical component is mounted to the mounting portion and configured to adjust an intensity distribution of light emitted from the at least one of the at least one first light emitting element or the at least one second light emitting element.

Abstract: A system, method and device for collimating the output of a light emitting diode (LED) are disclosed. The system, method and device include an LED substrate including a top surface from which the light is emitted, and an array of subwavelength scattering antennas positioned within the emitted light path, the array of subwavelength scattering antennas configured to select directions of scatter of the LED emitted light to provide collimated light output from the device. The array may be aligned perpendicular to the plane of propagation of the light emitted from the LED and may be positioned adjacent to the top surface. The array may be at least partially, or completely, positioned within the LED substrate. The array may be spaced a distance from the top surface and the spacing may be achieved using a dielectric spacer adjacent to the top surface. The array may be positioned within the dielectric spacer.

Abstract: An LED module includes a heat sink. The heat sink has a mounting surface that defines, with respect to ambient light incident thereon, one main direction of a beam perpendicular to the mounting surface and secondary directions of the beam inclined to the main direction of the beam at angles having absolute values smaller than or equal to 90 degrees. The heat sink also has a reflection surface oriented such that, with respect to the ambient light incident on thereon, a main direction of the beam of the reflection surface is perpendicular to the reflection surface and points in a direction included in the angle range determined by the main direction of the beam of the mounting surface and the secondary directions of the beam of the mounting surface. The LED module further includes an LED light source on the mounting face and pigments on the reflection surface.

Abstract: A method for manufacturing light emitting elements is described and includes providing an un-coated light converting platelet. The un-coated light converting platelet has a top surface, a bottom surface, and side surfaces. A plurality of LED dies is provided. Side surfaces of the un-coated light converting platelet are coated with an at least partly reflective material to form a coated light converting platelet. The coated light converting platelet is separated into light converting tiles. An outline of the light converting tiles substantially corresponds to an outline of one of the plurality of LED dies. The light converting tiles and the plurality of LED dies are assembled to form light emitting elements.

Abstract: LED devices and methods of operating LED devices are described. An LED device includes a light-emitting element, a wavelength converting layer and a dichroic mirror. The light-emitting element is configured to emit ultra violet, visible, or ultra violet and visible light. The wavelength converting layer is configured to absorb at least a portion of the light emitted by the light-emitting element and in response emit infrared light. The dichroic mirror transmits the infrared light emitted by the wavelength converting layer, reflects the light emitted by the light emitting element, and is arranged to reflect back into the wavelength converting layer light emitted by the light emitting element, transmitted unabsorbed through the wavelength converting layer, and incident on the dichroic mirror.

Abstract: A light-emitting apparatus can include a reflective cavity that can reflect visible light within the reflective cavity. The reflective cavity can allow the reflected visible light to exit the reflective cavity only at one or more specified emission locations. A visible light-emitting diode can emit visible light into the reflective cavity. An infrared light-emitting diode can emit infrared light into the reflective cavity. A lens can angularly redirect infrared light and visible light that exit the cavity through the one or more emission locations. The reflective cavity can be formed by surfaces at least partially coated with a coating that is reflective for visible light. The coated surfaces can include a circuit board that supports the light-emitting diodes, an incident surface of the lens, and an extension portion of the lens that extends from a flange to the incident surface of the lens.

Abstract: The image capture system of the present disclosure comprises an illuminator comprising at least one infrared light LED or laser and one visible light LED, an image sensor that is sensitive to infrared light and visible light, a memory configured to store instructions, and a processor configured to execute instructions to cause the image capture system to emit infrared light, receive image data comprising at least one infrared image, and determine depth maps, visible focus settings, or infrared exposure settings based on the infrared image data.

Abstract: An LED lamp (1) for a vehicle light, the LED lamp (1) comprising a retrofit body (112) defining a longitudinal direction and being integrally configured as a heat sink, a conductive structure (13) being arranged in a cavity of the retrofit body (12) and at least one LED module (11) being electrically connected to the conductive structure (13), the at least one LED module (11) comprising a substrate (111) and a diode semiconductor (112) applied onto the substrate (111); a retrofit body (12), a conductive structure (13), and a method for manufacturing an LED lamp (1) for a vehicle.

Abstract: A nano-structure layer is disclosed. The nano-structure layer includes an array of nano-structure material configured to receive a first light beam at a first angle of incidence and to emit the first light beam at a second angle greater than the first angle, the nano-structure material each having a largest dimension of less than 1000 nm.

Abstract: A light emitting diode (LED) may include a conductive via in a first portion of an epitaxial layer and a first contact on a second portion of the epitaxial layer. The first portion and the second portion may be separated by an isolation region. The LED may include a transparent conductive layer on the epitaxial layer.

Abstract: A particle layer is positioned over a light output surface of a light emitting diode. A transparent protection layer positioned between and in contact with the light output surface and the particle layer. The particle layer comprises a multitude of optically scattering or luminescent particles and a thin coating layer of transparent material coating particles of the multitude. The particles are characterized by a D50 greater than about 1.0 ?m and less than about 30. ?m; the coating layer has a thickness less than about 0.20 ?m. The protection layer is less than about 0.05 ?m thick and includes one or more materials different from material of the coating layer. The protection and coating layers can each include one or more metal or semiconductor oxides. Oxide precursor reactivities, with respect to the corresponding light output surface, are less for protection layer material than for coating layer material.

Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.

Abstract: Phosphor-converted LED side reflectors disclosed herein comprise pigments that are photochemically stable under illumination by light from the pcLED. The pigments absorb light in at least a portion of the spectrum of light emitted by the first phosphor converted LED. The side reflector may also comprise light scattering particles or air voids. The pigments, light scattering particles, or air voids may be homogeneously distributed in the reflector. Alternatively the side reflector may be layered, with the pigments, light scattering particles, or air voids inhomogeneously distributed in the reflector. The side reflector can include phosphor particles.

Abstract: In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.