Abstract: A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrically contacting the ohmic contact layer; a first material barrier layer electrically contacting the reflective layer; a current carrying layer electrically contacting the first material barrier layer; and a second material barrier layer electrically contacting the current carrying layer. LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. Methods of making and using the metal stacks and LED devices are also provided.

Abstract: A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrically contacting the ohmic contact layer; a first material barrier layer electrically contacting the reflective layer; a current carrying layer electrically contacting the first material barrier layer; and a second material barrier layer electrically contacting the current carrying layer. LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. Methods of making and using the metal stacks and LED devices are also provided.

Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.

Abstract: A light-emitting device (100A) includes: a lead frame (110) including a die paddle (111) and a lead (112) spaced apart from each other; a light-emitting die (120) attached on the die paddle (111); a wire (130) bonding the light-emitting die (120) to the lead (112), wherein a first end (131) of the wire (130) and a region of the light-emitting die (120) to which the first end (131) of the wire (130) is bonded form a first necking area (141); a first resin cover (150a) covering the first necking area (141); and a second resin cover (160) covering the first resin cover (150a), the light-emitting die (120), and the wire (130). The first resin cover (150a) has a hardness lower than a hardness of the second resin cover (160).

Abstract: A device comprising a light emitting diode (LED) substrate, and a meta-molecule wavelength converting layer positioned within an emitted light path from the LED substrate, the a meta-molecule wavelength converting layer including a plurality of nanoparticles, the plurality of nanoparticles configured to increase a light path length in the wavelength converting layer.

Abstract: A light-emitting diode (LED) driver is described herein. The LED driver includes input terminals that receive power from a pulse width modulation (PWM) power supply operating at a duty cycle less than 100%. The LED driver also includes a current source that receives the power from the input terminals and provides a controlled current with an adjustable target value for at least one LED. The LED driver also includes a PWM correction unit that adjusts the adjustable target value of the controlled current based on the duty cycle of the PWM to provide a constant light output of the LED retrofit lamp independent of the duty cycle of the PWM.

Abstract: A wavelength converting structure is provided, the wavelength converting structure including an SWIR phosphor having emission wavelengths in the range of 1600-2200 nm, the SWIR phosphor comprising a structurally disordered garnet material, a sensitizer ion, and at least one rare earth emitter ion. Also provided is a luminescent material having emission wavelength in the range of 1600-2200 nm, the luminescent material including (Gd3-u-v-x-y-zLuxTmyHozScvREu)[Sc2-a-bLuaCrbGadAle]{Ga3-cAlc}O12 with RE=La, Y, Yb, Nd, Er, Ce and 0?u?2, 0<v?1, 0<x?1, 0<y?0.5, 0?z?0.05, 0<a?1, 0<b?0.3, 0?c?3, 0<d?1.8, 0?e?1.8. An IR emitting device including the luminescent material may provide a broad-band emission in the wavelength range of 1600-2200 nm with a continuous emission spectrum over a spectral width of at least 500 nm.

Abstract: An LED retrofit signaling lamp is described herein. The lamp includes a lamp body, which includes a cap, a projection part, and a burner part between the cap and the projection part. Power contacts are exposed from the cap. A projection LED light source is provided in the projection part and angled to provide a projected image near to the vehicle when activated. A signaling LED light source is provided in the burner part angled to emit non-projected light via the projection part at angles that avoid the emitted light being blocked by the projection LED light source. The projection LED light source and the signaling LED light source are electrically coupled to the power contacts in parallel to each other.

Abstract: A light emitting diode (LED) lamp, vehicle headlight system and vehicle headlight that are adapted for use with an electrical system of a vehicle that was designed for a conventional lamp-based headlight. To adapt to the electrical system designed a conventional lamp-based headlight, a correcting circuit is utilized that allows for LEDs to be powered irrespective of a polarity of a power signal provided by the vehicle.

Abstract: A method of manufacturing a light emitting diode (LED) device includes forming an LED structure by depositing a plurality of semiconductor layers on a transparent substrate. Trenched metal is placed in the plurality of semiconductor layers, with the trenched metal contacting the transparent substrate. The LED structure is attached to a CMOS structure with electrical interconnects that define a cavity therebetween. Laser light is used to provide laser lift-off of the transparent substrate from the plurality of semiconductor layers.

Abstract: A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.

Abstract: The invention refers to a lighting device comprising at least one light emitting diode (LED). The object to provide a lighting device that is capable of providing a light pattern for illuminating an object in 3D imaging, wherein the lighting device is simple and cost-effective to manufacture, while the lighting device may in addition have a very small form factor, is solved in with a lighting device comprising: at least one LED for emitting light towards a light-emitting side; a first grating with a regular pitch having light-blocking sections and light-permeable sections; wherein the first grating is arranged on the light-emitting side to block the passage of light at the light-blocking sections, such that the light passing the light-permeable sections is capable to illuminate an object with a line pattern. The invention further corresponds to a method for producing a lighting device and the use of a lighting device.

Abstract: Described herein is a system and method for tuning light scatter in an optically functional porous layer of an LED. The layer comprises a non-light absorbing material structure having a plurality of sub-micron pores and a polymer matrix. The non-light absorbing material forms either a plurality of micron-sized porous particles dispersed throughout the layer or a mesh slab, wherein a plurality of sub-micron pores is located within each micron-sized porous particle or forms an interconnected network of sub-micron pores within the mesh slab, respectively. A polymer matrix, such as a high refractive index silicone fills the plurality of sub-micron pores creating an interface between the materials. Refractive index differences between the materials allow for light scatter to occur at the interface of the materials. Light scatter can also be decreased as a function of temperature, creating a system for tuning light scatter in both an off state and on state of an LED.

Abstract: A light-emitting device includes a semiconductor diode structure, a surface-lattice-mode (SLR) structure against the back of the diode structure, and a reflector against the back of the SLR structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength ?0 to propagate within the diode structure. The SLR structure includes an index-matched layer, a lower-index layer, and scattering elements, and is in near-field proximity to the active layer relative to ?0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating surface-lattice-resonance modes supported by the SLR structure, to propagate perpendicularly toward the device exit surface.

Abstract: A light-emitting device includes a semiconductor diode structure, a quasi-guided-mode (QGM) structure against the back of the diode structure, and a reflector against the back of the QGM structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength ?0 to propagate within the diode structure. The QGM structure includes a waveguide layer, a cladding layer, and scattering elements, and is in near-field proximity to the active layer relative to ?0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The scattering elements redirect output light propagating within the device, including in laterally propagating quasi-guided modes supported by the QGM structure, to propagate perpendicularly toward the device exit surface.

Abstract: A light-emitting device includes a semiconductor diode structure and a multi-layer reflector (MLR) structure. The diode structure includes first and second doped semiconductor layers and an active layer between them; the active layer emits output light at a nominal emission vacuum wavelength ?0 to propagate within the diode structure. The MLR structure is positioned against a back surface of the second semiconductor layer, includes two or more layers of dielectric materials of two or more different refractive indices, reflects incident output light within the diode structure, and is in near-field proximity to the active layer relative to ?0. At least a portion of the output light, propagating perpendicularly within the diode structure relative to a device exit surface, exits the diode structure as device output light. The MLR structure can include scattering elements that scatter some laterally propagating output light to propagate perpendicularly.

Abstract: Systems for apparatuses formed of light emitting devices. Solutions for controlling the off-state appearance of lighting system designs is disclosed. Thermochromic materials are selected in accordance with a desired off-state of an LED device. The thermochromic materials are applied to a structure that is in a light path of light emitted by the LED device. In the off-state the LED device produces a desired off-state colored appearance. When the LED device is in the on-state, the thermochromic materials heat up and become more and more transparent. The light emitted from the device in its on-state does not suffer from color shifting due to the presence of the thermochromic materials. Furthermore, light emitted from the LED device in its on-state does not suffer from attenuation due to the presence of the thermochromic materials. Techniques to select and position thermochromic materials in or around LED apparatuses are presented.

Abstract: A first LED with a first LED sidewall is disclosed. A second LED with a second LED sidewall facing the first LED sidewall is also disclosed. A first dynamic optical isolation material between the first LED sidewall and the second LED sidewall and configured to change an optical state based on a state trigger such that a light behavior at the first LED sidewall for a light emitted by one of the first LED and the second LED is determined by the optical state, is also disclosed.

Abstract: A device including a phosphor layer having a plurality of holes or pockets arranged within the phosphor layer to reduce lateral light transmission. The phosphor layer can be sized and positioned to extend over a plurality of LED emitter pixels.

Abstract: Panels of LED arrays and LED lighting systems are described. A panel includes a substrate having a top and a bottom surface. Multiple backplanes are embedded in the substrate, each having a top and a bottom surface. Multiple first electrically conductive structures extend at least from the top surface of each of the backplanes to the top surface of the substrate. Each of multiple LED arrays is electrically coupled to at least some of the first conductive structures. Multiple second conductive structures extend from each of the backplanes to at least the bottom surface of the substrate. At least some of the second electrically conductive structures are coupled to at least some of the first electrically conductive structures via the backplane. A thermal conductive structure is in contact with the bottom surface of each of the backplanes and extends to at least the bottom surface of the substrate.