Abstract: In a thin flash module for a camera, a rectangular array of LEDs is mounted on a single lead frame. The lead frame connects the LEDs in series. The LEDs are much smaller than conventional LEDs in a flash module. The LEDs may be in 5×3 array or a 4×3 array, for example. An array of reflective cups is molded over the lead frame or attached to the 10 lead frame, where each of the cups has a substantially square aperture to produce a square sub-beam. A layer of phosphor is located within each cup overlying its associated LED to produce white light. The aspect ratio of the array is selected to generally match the aspect ratio of the camera's field of view (e.g., 16:9). Since the LEDs are very small, the height of the cups may be small to form an ultra-thin flash module. Thin lenses may instead be used.

Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.

Abstract: The invention describes a method (100) for counterfeit detection using a portable device (1) with installed counterfeit detection application, to a data carrier (30) comprising this counterfeit detection application, to the portable device (1) used in this method and to a cover (50) comprising guiding structures to perform this method comprising the steps of taking multiple overlapping pictures (110) from at least a portion of the object (10) with the camera (2) of the portable device (1) positioned in front of the object (10) during relatively moving (RM) the portable device with respect to and (1) along the object (10); combining (120) all taken pictures to a single combined image of at least the portion of the object (10) with increased resolution by the counterfeit detection application (4) executed on the portable device (1); applying image processing (130) to the combined image by the counterfeit detection application (4) providing an improved image with improved properties compared to the combined imag

Abstract: A nano-structure layer is disclosed. The nano-structure layer includes an array of nano-structure material configured to receive a first light beam at a first angle of incidence and to emit the first light beam at a second angle greater than the first angle, the nano-structure material each having a largest dimension of less than 1000 nm.

Abstract: Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.

Abstract: A light emitting diode (LED) light source is disclosed. The LED light source comprises a lens structure that includes a hemispherical dome with a base. The LED light source comprises a cavity in the base. The cavity has an opening and a taper such that a cross-section area within the cavity is smaller than an area of the opening. The LED light source comprises a light emitting device comprising an LED die contacting the taper. The taper allows for easy insertion of the LED die into the lens structure. The taper serves to accurately align the LED die when the LED die is inserted.

Abstract: A light source useful for architectural lighting, general lighting, street lighting, or other lighting applications includes a plurality of light emitting diodes, with at least some light emitting diodes sized between 50 microns and 500 microns. A plurality of micro-optics sized less than 1 millimeter are positioned over at least some of the plurality of light emitting diodes. Each combination of light emitting diode and associated micro-optic is positioned within a Rayleigh distance to each other, sufficient to both present a substantially uniform visual appearance and provide a substantially uniform light beam. In some embodiments the height of the light emitting diodes, their supporting substrate and electrical traces, and associated optics is less than 5 millimeters.

Abstract: In a Sapphire Collector (SC), one or more features, both structural and parametric, are included for capturing the die-size sapphire chips that are removed from a semiconductor structure during die-level laser lift-off (LLO). These features are designed to increase the likelihood that each sapphire chip is securely captured by the Sapphire Collector immediately after it is released from the semiconductor structure. The Sapphire Collector includes a vacuum-enhance collector with a pickup element that lifts each released chip into the collector, and air pushers that direct the chips further into the collection tunnel leading to a discard bin.

Abstract: A LED lighting system includes a power supply, a LED controller, and a light guide plate having a top, a bottom, and an edge. A printed circuit board connected to the power supply is positioned at least partially under the bottom of the light guide plate. At least one surface-emitting LED is positioned on the printed circuit board adjacent to the light guide plate and directed to emit light vertically. A partially transmissive reflector is attached to extend between the top of the edge of the light guide plate and the printed circuit board to direct vertically emitted light from the at least one surface-emitting LED into the edge of the light guide plate.

Abstract: The invention generally relates to a catheter sterilization system using semiconductor light emitting devices (LEDs) to sterilize the lumen of a catheter. The sterilization system may include a sterilization head with attached semiconductor LEDs sized for insertion into the catheter. The sterilization head is connected to the linearly extending connector allowing an operator to move the sterilization head through the catheter. The sterilization system may alternatively include microLEDs attached to the inner sidewalls of the catheter to sterilize the lumen of the catheter.

Abstract: A particle layer is positioned over a light output surface of a light emitting diode. A transparent protection layer positioned between and in contact with the light output surface and the particle layer. The particle layer comprises a multitude of optically scattering or luminescent particles and a thin coating layer of transparent material coating particles of the multitude. The particles are characterized by a D50 greater than about 1.0 ?m and less than about 30. ?m; the coating layer has a thickness less than about 0.20 ?m. The protection layer is less than about 0.05 ?m thick and includes one or more materials different from material of the coating layer. The protection and coating layers can each include one or more metal or semiconductor oxides. Oxide precursor reactivities, with respect to the corresponding light output surface, are less for protection layer material than for coating layer material.

Abstract: The invention describes a light emitting diode array module comprising at least two light emitting diodes and a lens, wherein the lens comprises one common lens segment, wherein the common lens segment comprises a multitude of sections at least partly encompassing an axis perpendicular to the lens, wherein the sections shape an uneven surface of the lens, wherein the light emitting diodes are arranged to illuminate at least two non-overlapping target areas in a reference plane, and wherein the sections are arranged such that at least one light emitting diode illuminates one respective target area of the target areas. The invention further describes a flash light comprising at least one light emitting diode array module.

Abstract: The invention describes a broadband mirror comprising an outer surface layer; and a dielectric layer stack arranged underneath the outer surface layer; characterized in that the dielectric layer stack comprises at least one patterned surface at an interface between adjacent dielectric layers of the dielectric layer stack. The invention further describes a light-emitting diode. The invention also describes a method of manufacturing a broadband mirror, which method comprises the steps of providing an outer surface layer and applying a plurality of dielectric layers to build a dielectric layer stack underneath the outer surface layer, characterized by the step of patterning the surface of at least one dielectric layer before applying a subsequent dielectric layer to the patterned surface.

Abstract: Phosphor-converted LED side reflectors disclosed herein comprise pigments that are photochemically stable under illumination by light from the pcLED. The pigments absorb light in at least a portion of the spectrum of light emitted by the first phosphor converted LED. The side reflector may also comprise light scattering particles and/or air voids. The pigments, light scattering particles and/or air voids may be homogeneously distributed in the reflector. Alternatively the side reflector may be layered, with the pigments, light scattering particles and/or air voids inhomogeneously distributed in the reflector. The side reflector may comprise phosphor particles.

Abstract: A lighting device according to the invention comprises at least one semiconductor layer; at least one light emission surface comprising an array of high luminance areas configured to emit light at a first local luminance level and low luminance areas configured to emit no light or to emit light at a second local luminance level lower than the first local luminance level; a plurality of semiconductor light emitting devices formed in the semiconductor layer to define the plurality of high luminance areas; wherein the high luminance areas and the low luminance areas are arranged in accordance with a predefined light emission profile of the light emission surface.

Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.

Abstract: A backlight apparatus can include a light emitting element configured to emit visible light. The backlight apparatus can include a polarizing device including a prism situated to receive the visible light and to polarize the visible light to generate polarized light. The backlight apparatus can include a light guide panel configured to receive the polarized light at an input surface facing the polarizing device and to distribute the polarized light to a major surface of the light guide panel facing a display screen.

Abstract: A light emitting device and method of forming a light emitting device are disclosed. The light emitting device includes a light emitting diode and a phosphor layer formed on the light emitting diode, the phosphor layer including a plurality of phosphor particles formed in a particle layer, the particle layer including interstices between the phosphor particles, and a matrix material disposed in a portion of the interstices. A plurality of cavities may be disposed in a remaining portion of the interstices.

Abstract: A method is described for low temperature curing of silicone structures, including the steps of providing patterning photoresist structures on a substrate. The photoresist structures define at least one open region that can be at least partially filled with a condensation cure silicone system. Vapor phase catalyst deposition is used to accelerate the cure of the condensation cure silicone, and the photoresist structure is removed to leave free standing or layered silicone structures. Phosphor containing silicone structures that are coatable with a reflective metal or other material are enabled by the method.

Abstract: A light emitting device is disclosed. The light emitting device comprises a metal lead frame including a first lead and a second lead. The light emitting device comprises a first bonding pad on the first lead. The light emitting device comprises a second bonding pad on the second lead. The light emitting device comprises a structure molded on the first lead and the second lead. The structure includes walls extending from a first area of the structure proximate to the metal lead frame. The light emitting device comprises a light emitting diode (LED) die disposed on the first area of the structure. The LED die includes a first electrode electrically coupled to the first bonding pad and a second electrode electrically coupled to the second bonding pad. The light emitting device comprises an encapsulant partially filling the structure.