Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.

Abstract: The invention describes a lighting assembly (10, 10?, 20, 20?) for use in a lighting arrangement (2) of a vehicle (1), comprising a projection lens (11, 21) and an array (12, 22) of light sources (S11, . . . , S26), wherein the projection lens (11, 21) and the light source array (12, 22) are arranged according to an asymmetry displacement (?i, ?2, di, d2) of the optical axis (X1, X2) of the projection lens (11, 21), and wherein the light sources (S11, . . . , S26) of the light source array (12, 22) of the lighting assembly (10, 10?, 20, 20?) are individually controllable to adjust a swivel angle (?1, ?2) of a light beam (BL, BH) generated by that lighting assembly (10, 10?, 20, 20?). The invention further describes a controller (3) for controlling the light sources (S11, . . . , S26) of such a lighting assembly (10, 10?, 20, 20?).

Abstract: Embodiments of the invention include a semiconductor light emitting device, a first wavelength converting member disposed on a top surface of the semiconductor light emitting device, and a second wavelength converting member disposed on a side surface of the semiconductor light emitting device. The first and second wavelength converting members include different wavelength converting materials.

Abstract: Embodiments of the invention are directed to structures in a vertical light emitting device that prevent light from being generated beneath absorbing structures, and/or direct light away from absorbing structures. Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A bottom contact is disposed on a bottom surface of the semiconductor structure. The bottom contact is electrically connected to one of the n-type region and the p-type region. A top contact is disposed on a top surface of the semiconductor structure. The top contact is electrically connected to the other of the n-type region and the p-type region. The top contact includes a first side and a second side opposite the first side. A first trench is formed in the semiconductor structure beneath the first side of the top contact. A second trench is formed in the seminconductor structure beneath the second side of the top contact.

Abstract: Pre-formed wavelength conversion elements are attached to light emitting elements and are shaped to reduce repeated occurrences of total internal reflection. The sides of the shaped elements may be sloped or otherwise shaped so as to introduce a change in the angle of incidence of reflected light upon the light extraction surface of the wavelength conversion element. The pre-formed wavelength conversion elements may be configured to extend over an array of light emitting elements, with features between the light emitting elements that are shaped to reduce repeated occurrences of total internal reflection.

Abstract: A thin flash module for a camera uses a flexible circuit as a support surface. A blue GaN-based flip chip LED die is mounted on the flex circuit. The LED die has a thick transparent substrate forming a “top” exit window so at least 40% of the light emitted from the die is side light. A phosphor layer conformally coats the die and a top surface of the flex circuit. A stamped reflector having a knife edge rectangular opening surrounds the die. Curved surfaces extending from the opening reflect the light from the side surfaces to form a generally rectangular beam. A generally rectangular lens is affixed to the top of the reflector. The lens has a generally rectangular convex surface extending toward the die, wherein a beam of light emitted from the lens has a generally rectangular shape corresponding to an aspect ratio of the camera's field of view.

Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.

Abstract: The present invention encompasses materials and methods for catalyzing the cross-linking and curing of siloxane polymers. In particular, the present disclosure provides materials, methods, and conditions for vapor phase catalysis for curing organosiloxane polymers and resins, including resin linear organosiloxane block copolymers, as well as the incorporation of those methods into processes for making light emitting devices, including light emitting diodes.

Abstract: Embodiments of the invention include a light emitting device including a substrate and a semiconductor structure including a light emitting layer. A first reflective layer surrounds the light emitting device. A wavelength converting element is disposed over the light emitting device. A second reflective layer is disposed adjacent a first sidewall of the wavelength converting element.

Abstract: A headlight unit 10, 110 is described including a reflector 12 and a lamp mounting cavity 20. A lamp 30, 130 is mounted within the lamp mounting cavity 20. The lamp mounting cavity 20 is sealed by a cap 40 of partly flexible material. The cap 40 is provided as a heat spreader and dissipation element in thermal contact with the lamp 30.

Abstract: A method of separating a wafer including rows of light emitting devices is described. Dicing streets are provided on the wafer such that a respective one of the dicing streets is provided between each of the rows of light emitting devices on the wafer. The wafer is broken along a first one of the dicing streets to separate a first portion of the wafer from a remaining portion of the wafer. The first portion of the wafer includes more than one of the rows of light emitting devices. The first portion of the wafer is broken along a second one of the dicing streets to separate a second portion of the wafer from the first portion of the wafer.

Abstract: A ceramic green wavelength conversion element (120) is coated with a red wavelength conversion material (330) and placed above a blue light emitting element (110) such that the ceramic element (120) is attached to the light emitting element (110), thereby providing an efficient thermal coupling from the red and green converters (330, 120) to the light emitting element (110) and its associated heat sink. To protect the red converter coating (330) from the effects of subsequent processes, a sacrificial clear coating (340) is created above the red converter element (330). This clear coating (340) may be provided as a discrete layer of clear material, or it may be produced by allowing the red converters to settle to the bottom of its suspension material, thereby forming a converter-free upper layer that can be subjected to the subsequent fabrication processes.

Abstract: Light emitting diodes (LEDs) having a sensor segment for operational feedback are described. A semiconductor stack is grown on a sapphire substrate. The semiconductor stack is segmented to form at least two segments, where one segment senses light emissions (photosensor segment) from the other segment (emitter segment). The segmentation is achieved by etching a trench or forming a segmentation layer between the segments. One segment can alternate on a predetermined basis between functioning as a photosensor segment or as an emitter segment. The photosensor segment can detect either a side light ray emitting from the emitter segment or a reflected light ray from a substrate. The photosensor segment generates a current based on the detected light ray. A detector circuit can provide operational feedback based on the sensed current.

Abstract: In some embodiments of the invention, a device includes a semiconductor light emitting device having a first light extraction surface, a wavelength converting element, and a second light extraction surface. A majority of light extracted from the semiconductor light emitting device is extracted from the first light extraction surface. The first light extraction surface has a first area. The second light extraction surface is disposed over the first light extraction surface and has a second area. The first area is larger than the second area.

Abstract: A mounting substrate (40) has a patterned metal layer defining a plurality of top metal bond pads for bonding to bottom metal bond pads of LED dies. A solder mask layer (52) is formed over the mounting substrate, where the mask has openings that expose the top metal bond pads and protects metal traces on the substrate. The mask layer is a highly reflective white paint. The exposed top metal bond pads are then wetted with solder. The LED dies' bottom metal bond pads are then soldered to the exposed top metal bond pads, such that the mask layer surrounds each LED die to reflect light. A reflective ring (60) is affixed to the substrate to surround the LED dies. A viscous phosphor material (62) then partially fills the ring and is cured. All downward light by the LED dies and phosphor is reflected upward by the ring and solder mask layer.

Abstract: A system may include a light source. A converter may be configured to convert an AC voltage to a DC operating voltage during normal operation. A power backup device may be coupled to the converter. A current source may have a first terminal configured to receive the DC operating voltage during regular operation and a second terminal configured to provide a pulse-width modulated (PWM) signal to an anode end of the light source. A switching device may have a first connecting terminal coupled to the anode end of the light source, a second connecting terminal coupled to the power backup device, and a control terminal coupled to the converter. The switching device may be configured to open a switch between the first connecting terminal and the second connecting terminal during normal operation and close the switch upon detecting an interruption of the DC operating voltage at the control terminal.

Abstract: A Light Emitting Device (LED) that has increased reliability and efficiency. Specifically, the LED may be formed using Atomic Layer Deposition to improve the thermal conductivity between the ceramic plate and the LED, decrease the amount of organic contamination, and increase the efficiency of the optical output of the LED.

Abstract: A structure according to embodiments of the invention includes a semiconductor light emitting device and an optical element disposed over the semiconductor light emitting device. The semiconductor light emitting device is disposed in a recess in the optical element. A reflector is disposed on a bottom surface of the optical element. A method according to embodiments of the invention includes disposing a semiconductor light emitting device on a substrate and forming a reflector adjacent the semiconductor light emitting device. An optical element is formed over the semiconductor light emitting device. The semiconductor light emitting device is removed from the substrate.

Abstract: A light-emitting diode (LED) strip is disclosed. The LED strip includes: an input terminal for receiving a first reference signal, a first LED coupled to an end of a power bus and driven by a first current signal, the first current signal being supplied to the first LED via the power bus; a current-copying circuit arranged to control a flow rate of the first current signal based on the first reference signal; and a first switching element arranged to re-couple the first LED to the power bus when the first LED is disconnected from the end of the power bus as a result of the LED strip being cut at a first location.