Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer. The active layer may include a first barrier layer arranged to have a tensile strain, a second barrier layer arranged to have a tensile strain, and a first well layer disposed between the first barrier layer and the second barrier layer. The active layer may also include a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.

Abstract: A silicone product, a lighting unit comprising the silicone product, and a method of manufacturing a silicone product are provided. The silicone product comprises polymeric material, luminescent material and filler particles. The polymeric material comprises a material of the group of polysiloxanes. The polymeric material being light transmitting. The luminescent material comprises particles which have at least in one dimension a size in the nanometer range. The luminescent material is configured to absorb light of a first spectral range and to convert a portion of the absorbed light into light of a second spectral range. The filler particles are of a light transmitting inert material. The filler particles are miscible with the luminescent material. The filler particles are provided in the polymeric material. The particles of luminescent material are distributed along a surface of the filler particles.

Abstract: LEDs for an illumination system may be mounted on a PCB. The PCB may be provided with alignment features such as oversized holes for connection to a support surface. Using optical sensing of the position of the mounted LEDs, the space made available by the alignment features may be reduced and aligned to create modified alignment features. The modified alignment features may be created by adding a modifying component and aligned based on the sensed positions of the mounted LEDs. The positioning of the modifying component may offset misalignment of the LEDs with the PCB. An opening in the modified alignment feature may receive a bolt or alignment pin for connection to the support surface. The support surface may be aligned with the secondary optics, resulting in the LEDs being aligned with the secondary optics irrespective of misalignment of the LEDs with respect to the PCB.

Abstract: A light emitting structure includes a packaged back-emitting light emitting device mounted on a reflective substrate. The properties of the reflective surface may be controlled to provide a desired luminance pattern. In this manner, the creation of a light emitting structure that provides a desired luminance pattern may be independent of the provider of the packaged light emitting device.

Abstract: A light-emitting device is disclosed that includes a semiconductor structure having an active region disposed between an n-type layer and a p-type layer; a wavelength converter formed above the semiconductor structure; an insulating side coating formed around the semiconductor structure; and a reflective side coating formed around the wavelength converter above the insulating side coating, the reflective side coating having a top surface that is flush with a top surface of the wavelength converter.

Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: Embodiments of the invention include a package for a light emitting diode (LED). The package includes a lead frame, an LED, and an optically reflective but electrically non-conductive molding. The lead frame has a first lead frame part and a second lead frame part electrically isolated from the first lead frame part, each lead frame part having at least one raised pillar. The molding is disposed over the lead frame except over the pillars of the lead frame. The LED is mounted on at least one pillar and is electrically coupled to at least one pillar. The molding serves the purpose of a highly reflective, electrically conductive material like silver without being subject to tarnishing.

Abstract: Systems for LED illumination products. Solutions to the problems attendant to delivering a white-appearing LED product without diminishing efficiency of white light generation are presented. Devices are designed and manufactured that include a specially-formulated off-state white-appearing layer to the LED apparatus. The composition of the specially-formulated off-state white-appearing layer is tuned for high-efficiency during the on-state.

Abstract: A light emitting assembly comprising: a light emitting structure with a first light emission surface comprising one or more point-like light sources to emit light; a transparent beam shaping structure comprising a second light emission surface and a second light receiving surface, wherein the second light receiving surface is arranged at a distance above the first light emission surface to create an air gap to receive light emitted from the light emitting structure within an acceptance angle ? for the beam shaping structure to shape a resulting beam of light being emitted through the second light emission surface; and one or more transparent light guiding elements arranged between the beam shaping structure and the light emitting structure suitably shaped to refract at least part of the light emitted from the first light emission surface under an emergent angle ? larger than the acceptance angle ? towards the beam shaping structure.

Abstract: An LED die includes a luminescent sapphire layer affixed to LED semiconductor layers. The luminescent sapphire absorbs a portion of the primary light and down-converts the primary light to emit secondary light. A phosphor layer may be added. The luminescent sapphire may comprise luminescent sapphire particles in a binder forming a mixture deposited over the LED semiconductor layers. Alternatively, the luminescent sapphire comprises a pre-formed tile that is affixed over the LED semiconductor layers. Alternatively, the luminescent sapphire comprises a luminescent sapphire growth substrate on which is epitaxially grown the LED semiconductor layers. After the LED die is formed, the luminescent characteristics of the sapphire may be adjusted using optical conditioning and/or annealing to tune the die's overall emission.

Abstract: An interface currents channeling circuit may be used to convert two current channels of a conventional two-channel driver into three driving currents for the three strings of LEDs. By doing so, the same two channel driver can be used for applications requiring just two LED arrays as well as three LED arrays.

Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.

Abstract: Systems for apparatuses formed of light emitting devices. Solutions for controlling the off-state appearance of lighting system designs is disclosed. Thermochromic materials are selected in accordance with a desired off-state of an LED device. The thermochromic materials are applied to a structure that is in a light path of light emitted by the LED device. In the off-state the LED device produces a desired off-state colored appearance. When the LED device is in the on-state, the thermochromic materials heat up and become more and more transparent. The light emitted from the device in its on-state does not suffer from color shifting due to the presence of the thermochromic materials. Furthermore, light emitted from the LED device in its on-state does not suffer from attenuation due to the presence of the thermochromic materials. Techniques to select and position thermochromic materials in or around LED apparatuses are presented.

Abstract: A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.

Abstract: A multi-layer metal core printed circuit board (MCPCB) has mounted on it at least one or more heat-generating LEDs and one or more devices configured to provide current to the one or more LEDs. The one or more devices may include a device that carries a steep slope voltage waveform. Since there is typically a very thin dielectric between the patterned copper layer and the metal substrate, the steep slope voltage waveform may produce a current in the metal substrate due to AC coupling via parasitic capacitance. This AC-coupled current may produce electromagnetic interference (EMI). To reduce the EMI, a local shielding area may be formed between the metal substrate and the device carrying the steep slope voltage waveform. The local shielding area may be conductive and may be electrically connected, to a DC voltage node adjacent to the one or more devices.

Abstract: A light emitting structure includes a packaged back-emitting light emitting device mounted on a reflective substrate. The properties of the reflective surface may be controlled to provide a desired luminance pattern. In this manner, the creation of a light emitting structure that provides a desired luminance pattern may be independent of the provider of the packaged light emitting device.

Abstract: An LED module includes a substrate having a high thermal conductivity and at least one LED die mounted on the substrate. A wavelength conversion material, such as phosphor or quantum dots in a binder, has a very low thermal conductivity and is formed to have a relatively high volume and low concentration over the LED die so that the phosphor or quantum dots conduct little heat from the LED die. A transparent top plate having a high thermal conductivity is positioned over the wavelength conversion material, and a hermetic seal is formed between the top plate and the substrate surrounding the wavelength conversion material. The LED die is located in a cavity in either the substrate or the top plate. In this way, the temperature of the wavelength conversion material is kept well below the temperature of the LED die. The sealing is done in a wafer level process.

Abstract: A method according to embodiments of the invention includes positioning a flexible film (48) over a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a semiconductor structure (13) including a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor light emitting devices is bonded to a substrate (50) via the flexible film (48). After bonding, the flexible film (48) is in direct contact with the semiconductor structures (13). The method further includes dividing the wafer after bonding the wafer to the substrate (50).

Abstract: The invention provides a lighting unit comprising a source of blue light, a source of green light, a first source of red light comprising a first red luminescent material, configured to provide red light with a broad band spectral light distribution, and a second source of red light comprising a second red luminescent material, configured to provide red light with a spectral light distribution comprising one or more red emission lines. Especially, the first red luminescent material comprises (Mg,Ca,Sr)AlSiN3:Eu and/or (Ba,Sr,Ca)2Si5-xAlxOxN8-x:Eu, and the second red luminescent material comprises K2SiF6:Mn.

Abstract: The invention provides a lighting device for providing light, the lighting device comprising a closed chamber with a light transmissive window and a light source configured to provide light source radiation into the chamber, wherein the chamber further encloses a wavelength converter configured to convert at least part of the light source radiation into wavelength converter light, wherein the light transmissive window is transmissive for the wavelength converter light, wherein the wavelength converter comprises luminescent quantum dots which upon excitation with at least part of the light source radiation generate at least part of the wavelength converter light, and wherein the closed chamber comprises a filling gas comprising one or more of helium gas, hydrogen gas, nitrogen gas or oxygen gas, the filling gas having a relative humidity at 19° C. of at least 5%.