Abstract: A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.

Abstract: A lighting device including a body (10). The body (10) includes a mounting area (11) with a plurality of conductive pads (50, 52) and an elongate member (16) extending from the mounting area (11). The mounting area (11) and the elongate member (16) are formed of a thermally conductive, electrically insulating material. The conductive pads (50, 52) are embedded in the thermally conductive, electrically insulating material. The device further includes a semiconductor light emitting device (12) disposed in direct contact with the body (10) in the mounting area (11).

Abstract: Semiconductor LED layers are epitaxially grown on a patterned surface of a sapphire substrate. The patterned surface improves light extraction. The LED layers include a p-type layer and an n-type layer. The LED layers are etched to expose the n-type layer. One or more first metal layers are patterned to electrically contact the p-type layer and the n-type layer to form a p-metal contact and an n-metal contact. A dielectric polymer stress-buffer layer is spin-coated over the first metal layers to form a substantially planar surface over the first metal layers. The stress-buffer layer has openings exposing the p-metal contact and the n-metal contact. Metal solder pads are formed over the stress-buffer layer and electrically contact the p-metal contact and the n-metal contact through the openings in the stress-buffer layer. The stress-buffer layer acts as a buffer to accommodate differences in CTEs of the solder pads and underlying layers.

Abstract: An illumination device is manufactured by providing (101) a substrate (1) having a first side (1a), sealingly coupling (106) an at least partially light transmitting cover (2) to the substrate (1) such that an enclosed space (3) is defined by at least the first side (1a) of the substrate (1) and the cover (2), providing a through-hole (4) into the enclosed space (3), and introducing (107) a luminescent material into the enclosed space (3) via the through-hole (4). By hermetically sealing (108) the through-hole (4) after the introduction of the luminescent material, the enclosed space (3) becomes sealed and hence luminescent materials being relatively sensitive to e.g. water and/or oxygen become protected from exposure to the environment.

Abstract: The invention provides a lighting device comprising (a) a light converter comprising a light receiving face; and (b) a solid state light source configured to generate a light source light with a photon flux of at least 10 W/cm2 at the light receiving face, wherein the light converter is configured to convert at least part of the light source light into light converter light having a first frequency, wherein the light converter comprises a semiconductor quantum dot in an optical structure selected from a photonic crystal structure and a plasmonic structure, wherein the optical structure is configured to increase the photon density of states in the light converter resonant with the first frequency for reducing saturation quenching, and wherein the quantum dot has a quantum efficiency of at least 80%.

Abstract: A semiconductor light emitting device (100;200;300;400,400B,400C;500;600;700) may have a reflective side coating (120;220;320;420;520;620;720) disposed on a sidewall (118;215;315;415,435;515) of a semiconductor light emitting device structure. Such a device may be fabricated by dicing a semiconductor structure to separate a semiconductor light emitting device structure and then forming a reflective side coating (120;220;320;420;520;620;720) on a sidewall (118;215;315;415,435;515) of the separated semiconductor light emitting device structure.

Abstract: Embodiments of the invention include a semiconductor light emitting device, a first wavelength converting member disposed on a top surface of the semiconductor light emitting device, and a second wavelength converting member disposed on a side surface of the semiconductor light emitting device. The first and second wavelength converting members include different wavelength converting materials.

Abstract: The surface of a light emitting device is roughened to enhance the light extraction efficiency of the surface, but the amount of roughened area is selected to achieve a desired level of light extraction efficiency. Photo-lithographic techniques may be used to create a mask that limits the roughening to select areas of the light emitting surface. Because the amount of roughened area can be precisely controlled, the light extraction efficiency can be precisely controlled, substantially independent of the particular process used to roughen the surface. Additionally, the selective roughening of the surface may be used to achieve a desired light emission output pattern.

Abstract: A device according to embodiments of the invention includes a light emitting diode (LED) mounted on an electrically conducting substrate. A lens is disposed over the LED. A polymer body is molded over the electrically conducting substrate and in direct contact with the lens.

Abstract: A lamp (10), which is particularly a motor vehicle headlight, comprises a burner (12) for emitting light, which is supported by a holder (16) for mechanically connecting the burner (12) with a socket (14). The holder (16) comprises a metal ring (26) surrounding the burner (12). The metal ring (26) is thermally connected to the burner (12) via a single connecting surface (40), which is in planar contact to the burner (12) over an angle of ?350° in circumferential direction. Due to the increased heat transfer to the environment the used materials are less subjected to heat, so that the overall lifetime and the shock resistance of the lamp (10) are increased at the same time.

Abstract: The invention provides a process for the production of a light converter comprising a siloxane polymer matrix with light converter nano particles embedded therein, the process comprising (a) mixing (i) light converter nano particles having an outer surface grafted with grafting ligands and (ii) curable siloxane polymers, and (b) curing the curable siloxane polymers, thereby producing the light converter; wherein the grafting ligands comprise siloxane grafting ligands having x1 Si backbone elements, wherein at least one Si backbone element of each siloxane grafting ligand comprises a side group having a grafting functionality; wherein the curable siloxane polymers have y1 Si backbone elements; and wherein x1 is at least 20, wherein y1 is at least 2, and wherein x1/y1?0.8.

Abstract: A light emitting diode (“LED”) module is disclosed. The LED module includes a first LED tap and a second LED tap, the first tap being powered on for a longer amount of time than the second LED tap, based on an alternating current voltage. The LED module also includes a first LED package on which a first LED associated with the first LED tap and a second LED associated with the second LED tap are disposed. The LED module further includes a second LED package on which a third LED associated with the first LED tap and a fourth LED associated with the second LED tap are disposed.

Abstract: The invention provides a process for the production of a (particulate) luminescent material comprising particles, especially substantially spherical particles, having a porous inorganic material core with pores, especially macro pores, which are at least partly filled with a polymeric material with luminescent quantum dots embedded therein, wherein the process comprises (i) impregnating the particles of a particulate porous inorganic material with pores with a first liquid (“ink”) comprising the luminescent quantum dots and a curable or polymerizable precursor of the polymeric material, to provide pores that are at least partly filled with said luminescent quantum dots and curable or polymerizable precursor; and (ii) curing or polymerizing the curable or polymerizable precursor within pores of the porous material, as well as a product obtainable thereby.

Abstract: A control circuit for a light emitting diode (LED) lighting system for achieving a dim-to-warm effect is provided. The control circuit includes an LED controller, a clamp circuit coupled to a set of warm correlated-color-temperature (“CCT”) LEDs, a switch coupled to a set of cool LEDs, and a feedback circuit coupled to the clamp and the switch. The LED controller is configured to control the clamp circuit to clamp current through the set of warm LEDs based on the input current, and control the switch to switch on the set of cool LEDs responsive to the input current being greater than a first threshold level and to switch off the set of cool LEDs responsive to the input current being lower than the first threshold level. The feedback circuit is configured to divert current from the set of warm LEDs to the set of cool LEDs.

Abstract: A system is disclosed including, a light source; a converter configured to convert AC voltage to DC operating voltage; a power backup device coupled to the converter; a current source coupled to the power backup device, the current source being powered by the converter, the current source being configured to receive the DC operating voltage generated by the converter through the power backup device, and the current source being configured to output a pulse-width modulated (PWM) signal to the light source based on the DC operating voltage; and a switching device coupled to the power backup device in parallel with the current source, the switching device being configured to couple the light source to the power backup device when the current source is disabled as a result of a supply of AC voltage to the converter being interrupted.

Abstract: A device according to embodiments of the invention includes a waveguide, typically formed from a first section of transparent material. A light source is disposed proximate a bottom surface of the waveguide. The light source comprises a semiconductor light emitting diode and a second section of transparent material disposed between the semiconductor light emitting diode and the waveguide. Sidewalls of the second section of transparent material are reflective. A surface to be illuminated is disposed proximate a top surface of the waveguide. In some embodiments, an edge of the waveguide is curved.

Abstract: An illumination system comprising a radiation source and a monolithic ceramic luminescence converter comprising a composite material of at least one luminescent compound, and at least one non-luminescent compound, wherein the material of the non-luminescent compound comprises silicon and nitrogen, is advantageously used, when the luminescent compound comprises an rare-earth metal-activated host compound also comprising silicon and nitrogen. Shared chemical characteristics of the luminescent compound and the non-luminescent material improve phase assemblage, thermal and optical behavior. The invention relates also to a composite monolithic ceramic luminescence converter.

Abstract: The present invention relates to a LED lamp unit (10) comprising at least two LED light sources (2) arranged between a heat sink (3) and an electrical connector base at two opposing sides of the lamp unit (10) to emit in opposed half spaces. The proposed LED lamp unit can be constructed in a very compact form in order to replace known halogen, xenon and incandescent bulbs without changing the construction of the reflector and mechanical parts in a head lamp or signaling lamp.

Abstract: There is provided an illumination device (100) comprising: a substrate (104); an optically transmissive first layer (106) arranged on the substrate; a photon emitting layer (108), arranged on the optically transmissive first layer and comprising a photon emitting material configured to receive energy from an energy source and to emit light having a predetermined wavelength; a periodic plasmonic antenna array, arranged on the substrate and embedded within the first layer, and comprising a plurality of individual antenna elements (114) arranged in an antenna array plane, the plasmonic antenna array being configured to support a first lattice resonance at the predetermined wavelength, arising from coupling of localized surface plasmon resonances in the individual antenna elements to photonic modes supported by the system comprising the plasmonic antenna array and the photon emitting layer, wherein the plasmonic antenna array is configured to comprise plasmon resonance modes such that light emitted from the plasm

Abstract: A method according embodiments of the invention includes providing a wafer of semiconductor devices. The wafer of semiconductor devices includes a semiconductor structure comprising a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor devices further includes first and second metal contacts for each semiconductor device. Each first metal contact is in direct contact with the n-type region and each second metal contact is in direct contact with the p-type region. The method further includes forming a structure that seals the semiconductor structure of each semiconductor device. The wafer of semiconductor devices is attached to a wafer of support substrates.