Abstract: Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed.

Abstract: Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed.

Abstract: Systems and methods are disclosed for transporting wafers to a processing apparatus. The system comprises a frame having a support sized for receiving a wafer assembly including the wafers. An alignment system is connected to the frame. The alignment system is disposed for guiding the wafer assembly to a first position as the wafer assembly is lowered onto the support of the frame. The alignment system reduces the amount of time required to transport the wafers to the processing apparatus.

Abstract: Systems and methods are provided for processing abrasive slurry used in cutting operations. The slurry is mixed with a first solvent in a tank. The slurry is vibrated and/or ultrasonically agitated such that abrasive grain contained in the slurry separates from the other components of the slurry and the first solvent. After the abrasive grain has settled to a bottom portion of the container, the other components of the slurry and the first solvent are removed from the tank. The abrasive grain may then be washed with a second solvent. The abrasive grain is then heated and is suitable for reuse in an abrasive slurry.

Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Abstract: Systems and methods are provided for processing abrasive slurry used in cutting operations. The slurry is mixed with a first solvent in a tank. The slurry is vibrated and/or ultrasonically agitated such that abrasive grain contained in the slurry separates from the other components of the slurry and the first solvent. After the abrasive grain has settled to a bottom portion of the container, the other components of the slurry and the first solvent are removed from the tank. The abrasive grain may then be washed with a second solvent. The abrasive grain is then heated and is suitable for reuse in an abrasive slurry.

Abstract: The disclosure relates to preparation of silicon on insulator structures with reduced unbonded regions and to methods for producing such wafers by minimizing the roll-off amount (ROA) of the handle and donor wafers. Methods for polishing wafers are also provided.

Abstract: Apparatus and methods for mechanically cleaving a bonded wafer structure are disclosed. The apparatus and methods involve clamps that grip the bonded wafer structure and are actuated to cause the bonded structure to cleave.

Abstract: Apparatus and methods for mechanically cleaving a bonded wafer structure are disclosed. The apparatus and methods involve clamps that grip the bonded wafer structure and are actuated to cause the bonded structure to cleave.

Abstract: The invention generally related to a method for preparing a layer of graphene directly on the surface of a semiconductor substrate. The method includes forming a carbon-containing layer on a front surface of a semiconductor substrate and depositing a metal film on the carbon layer. A thermal cycle degrades the carbon-containing layer, which forms graphene directly upon the semiconductor substrate upon cooling. In some embodiments, the carbon source is a carbon-containing gas, and the thermal cycle causes diffusion of carbon atoms into the metal film, which, upon cooling, segregate and precipitate into a layer of graphene directly on the semiconductor substrate.

Abstract: A wafer support ring and a method of using the same are disclosed herein. The support ring supports a wafer during a first processing operation. A top surface of the support ring is in contact with a first plurality of locations on a surface of the wafer during the first processing operation. A second wafer support structure is used to support the wafer during a second processing operation. A top surface of the second wafer support structure is in contact with a second, different plurality of locations on the surface of the wafer during the second processing operation. The wafer support ring may also have an outer lip disposed about an outer periphery of the support ring that has a depth such that it does not form part of the top surface of the support ring.

Abstract: Systems and methods are disclosed for connecting an ingot to a wire saw with an ingot holder, a bond beam, and a bar. The bar has an angled mating surface that engages a recessed surface formed in a slot of the bond beam. Mechanical fasteners are used to connect the tee bar to the ingot holder. The angle of the mating surface with respect to the recessed surface of the slot prevents deformation of the bond beam and prevents compromising the integrity of the adhesive bond between the ingot and the bond beam.

Abstract: Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.

Abstract: Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.

Abstract: A barrel susceptor for supporting semiconductor wafers in a heated chamber having an interior space. Each of the wafers has a front surface, a back surface and a circumferential side. The susceptor includes a body having a plurality of faces arranged around an imaginary central axis of the body. Each face has an outer surface and a recess extending laterally inward into the body from the outer surface. Each recess is surrounded by a rim defining the respective recess. The susceptor also includes a plurality of ledges extending outward from the body. Each of the ledges is positioned in one of the recesses and includes an upward facing support surface for supporting a semiconductor wafer received in the recess. Each of the support surfaces is separate from the outer surface of the respective face.

Abstract: Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall.

Abstract: A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.

Abstract: Systems and methods are provided for mechanically cleaving a bonded wafer pair by controlling the rate of cleaving. This controlled rate of cleaving results in a reduction or elimination of non-uniform thickness variations in the cleaved surface of the resulting SOI wafer. One embodiment uses flexible chucks attached to the faces of the wafers and actuators attached to the flexible chucks to cleave the bonded wafer pair. Other embodiments also use rollers in contact with the surfaces to control the rate of cleaving.

Abstract: Methods for producing aluminum trifluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, optionally, in the presence of a source of silicon; methods for producing silane that include acid digestion of by-products of silane production to produce aluminum trifluoride.

Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.