Patents Assigned to MEMC
  • Methods of grinding semiconductor wafers having improved nanotopology
    Patent number: 8267745
    Abstract: Methods for holding a workpiece with a hydrostatic pad are disclosed herein. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer. The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels.
    Type: Grant
    Filed: October 6, 2010
    Date of Patent: September 18, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Milind S. Bhagavat, Puneet Gupta, Roland R. Vandamme, Takuto Kazama, Noriyuki Tachi
  • METHODS FOR INTRODUCTING A FIRST GAS AND A SECEOND GAS INTO A REACTION CHAMBER
    Publication number: 20120230903
    Abstract: Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall.
    Type: Application
    Filed: April 25, 2012
    Publication date: September 13, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Milind Kulkarni, Puneet Gupta, Balaji Devulapalli, Jameel Ibrahim, Vithal Revankar, Kwasi Foli
  • REACTOR APPARATUS AND METHODS FOR REACTING COMPOUNDS
    Publication number: 20120199324
    Abstract: Shell and tube heat exchangers that include a baffle arrangement that improves the temperature profile and flow pattern throughout the exchanger and/or that are integral with a reaction vessel are disclosed. Methods for using the exchangers including methods that involve use of the exchanger and a reaction vessel to produce a reaction product gas containing trichlorosilane are also disclosed.
    Type: Application
    Filed: January 20, 2012
    Publication date: August 9, 2012
    Applicant: MEMC ELECTRONIC MATERIALS SPA
    Inventors: Gianluca Pazzaglia, Matteo Fumagalli, Rodolfo Bovo
  • SHELL AND TUBE HEAT EXCHANGERS AND METHODS OF USING SUCH HEAT EXCHANGERS
    Publication number: 20120199323
    Abstract: Shell and tube heat exchangers that include a baffle arrangement that improves the temperature profile and flow pattern throughout the exchanger and/or that are integral with a reaction vessel are disclosed. Methods for using the exchangers including methods that involve use of the exchanger and a reaction vessel to produce a reaction product gas containing trichlorosilane are also disclosed.
    Type: Application
    Filed: January 20, 2012
    Publication date: August 9, 2012
    Applicant: MEMC ELECTRONIC MATERIALS SPA
    Inventors: Gianluca Pazzaglia, Matteo Fumagalli, Rodolfo Bovo
  • METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS
    Publication number: 20120193753
    Abstract: Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.
    Type: Application
    Filed: January 20, 2012
    Publication date: August 2, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Alexis Grabbe, Larry Flannery
  • Methods to recover and purify silicon particles from saw kerf
    Patent number: 8231006
    Abstract: The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw material.
    Type: Grant
    Filed: December 28, 2009
    Date of Patent: July 31, 2012
    Assignee: MEMC Singapore Pte. Ltd.
    Inventors: Alexis Grabbe, Tracy M. Ragan
  • PRODUCTION OF POLYCRYSTALLINE SILICON IN SUBSTANTIALLY CLOSED-LOOP PROCESSES THAT INVOLVE DISPROPORTIONATION OPERATIONS
    Publication number: 20120189527
    Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.
    Type: Application
    Filed: December 16, 2011
    Publication date: July 26, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Puneet Gupta, Yue Huang, Satish Bhusarapu
  • PRODUCTION OF POLYCRYSTALLINE SILICON IN SUBSTANTIALLY CLOSED-LOOP SYSTEMS THAT INVOLVE DISPROPORTIONATION OPERATIONS
    Publication number: 20120189501
    Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.
    Type: Application
    Filed: December 16, 2011
    Publication date: July 26, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Puneet Gupta, Yue Huang, Satish Bhusarapu
  • Directional Solidification Furnace For Reducing Melt Contamination And Reducing Wafer Contamination
    Publication number: 20120186299
    Abstract: A directional solidification furnace includes a crucible for holding molten silicon and a lid covering the crucible and forming an enclosure over the molten silicon. The crucible also includes an inlet in the lid for introducing inert gas above the molten silicon to inhibit contamination of the molten silicon.
    Type: Application
    Filed: January 19, 2012
    Publication date: July 26, 2012
    Applicant: MEMC SINGAPORE PTE. LTD. (UEN200614794D)
    Inventors: Steven L. Kimbel, Jihong (John) Chen, Richard G. Schrenker, Lee W. Ferry
  • Low thermal mass semiconductor wafer plate
    Patent number: 8220646
    Abstract: A support for a semiconductor wafer includes a plate having a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: July 17, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Brian Lawrence Gilmore, Lance G. Hellwig
  • Low thermal mass semiconductor wafer boat
    Patent number: 8220647
    Abstract: A wafer boat for a semiconductor wafer includes vertical rods, fingers supported by the vertical rods, and plates supported by the fingers. The plate has a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: July 17, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Brian Lawrence Gilmore, Lance G. Hellwig
  • Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth
    Patent number: 8216362
    Abstract: Processes for preparing a single crystal silicon ingot are disclosed. In certain embodiments, the processes involve controlling (1) a growth velocity, v, of the ingot as well as (2) an average axial temperature gradient, G, a corrected average axial temperature gradient, Gcorrected, or an effective average axial temperature gradient, Geffective, during the growth of at least a segment of the constant diameter portion of the ingot.
    Type: Grant
    Filed: May 18, 2007
    Date of Patent: July 10, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventor: Milind S. Kulkarni
  • SYSTEMS AND METHODS FOR PARTICLE SIZE DETERMINATION AND CONTROL IN A FLUIDIZED BED REACTOR
    Publication number: 20120173170
    Abstract: Systems and methods are provided for determining the size of particles within a fluidized bed reactor. The pressure of gas adjacent a gas inlet and adjacent a gas outlet of the reactor are measured with pressure sensors. An algorithm is applied to at least one of the pressure measurements to determine the size of particles within the reactor. The determined size of the particles can be used to control the operation of the reactor. A dosing system and method is provided for measuring defined volumes of particles for transport to the reactor.
    Type: Application
    Filed: December 29, 2010
    Publication date: July 5, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Satish Bhusarapu, Arif Nawaz, Puneet Gupta, Karthik Balakrishnan
  • SYSTEMS AND METHODS FOR PARTICLE SIZE DETERMINATION AND CONTROL IN A FLUIDIZED BED REACTOR FOR USE WITH THERMALLY DECOMPOSABLE SILICON-CONTAINING GAS
    Publication number: 20120173165
    Abstract: Systems and methods are provided for determining the size of particles within a fluidized bed reactor for use with thermally decomposable silicon-containing gas. The pressure of gas adjacent a gas inlet and adjacent a gas outlet of the reactor are measured with pressure sensors. An algorithm is applied to at least one of the pressure measurements to determine the size of particles within the reactor. The determined size of the particles can be used to control the operation of the reactor.
    Type: Application
    Filed: December 29, 2010
    Publication date: July 5, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Satish Bhusarapu, Arif Nawaz, Puneet Gupta, Karthik Balakrishnan
  • Coating compositions
    Patent number: 8211965
    Abstract: Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.
    Type: Grant
    Filed: July 16, 2010
    Date of Patent: July 3, 2012
    Assignee: MEMC Singapore Pte. Ltd. (UEN 200614794D)
    Inventors: Richard J. Phillips, Steven L. Kimbel, Aditya J. Deshpande, Gang Shi
  • PRODUCTION OF POLYCRYSTALLINE SILICON BY THE THERMAL DECOMPOSITION OF DICHLOROSILANE IN A FLUIDIZED BED REACTOR
    Publication number: 20120164323
    Abstract: Processes for producing polycrystalline silicon by thermal decomposition of dichlorosilane are disclosed. The processes generally involve thermal decomposition of dichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.
    Type: Application
    Filed: December 23, 2010
    Publication date: June 28, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Satish Bhusarapu, Puneet Gupta, Yue Huang
  • SYSTEMS FOR PRODUCING SILANE
    Publication number: 20120164033
    Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.
    Type: Application
    Filed: December 23, 2010
    Publication date: June 28, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Puneet Gupta, Henry F. Erk, Alexis Grabbe
  • METHODS FOR PRODUCING SILANE
    Publication number: 20120160702
    Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.
    Type: Application
    Filed: December 23, 2010
    Publication date: June 28, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Puneet Gupta, Henry F. Erk, Alexis Grabbe
  • Semiconductor wafer polishing apparatus and method of polishing
    Patent number: 8192248
    Abstract: A wafer polishing apparatus has a base and a turntable having a polishing pad thereon and mounted on the base for rotation of the turntable and polishing pad relative to the base about an axis perpendicular to the turntable and polishing pad. The polishing pad includes a work surface engageable with a front surface of a wafer for polishing the front surface of the wafer. A drive mechanism is mounted on the base for imparting rotational motion about an axis substantially parallel to the axis of the turntable. A polishing head is connected to the drive mechanism for driving rotation of the polishing head. The polishing head has a pressure plate adapted to hold the wafer for engaging the front surface of the wafer with the work surface of the polishing pad. The pressure plate has a generally planar position and is selectively movable from the planar position to a convex position and to a concave position.
    Type: Grant
    Filed: May 30, 2008
    Date of Patent: June 5, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Peter D. Albrecht, Guoqiang Zhang
  • Edge etched silicon wafers
    Patent number: 8192822
    Abstract: The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
    Type: Grant
    Filed: March 31, 2009
    Date of Patent: June 5, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Henry F. Erk, Peter D. Albrecht, Eugene R. Hollander, Thomas E. Doane, Judith A. Schmidt, Roland R. Vandamme, Guoqiang (David) Zhang