Patents Assigned to MEMC
  • Wafer holder for supporting a semiconductor wafer during a thermal treatment process
    Patent number: 8186661
    Abstract: A wafer holder for holding a semiconductor wafer during a thermal wafer treatment process. The wafer holder includes at least three wafer supports. Each wafer support includes an upright shaft and a plurality of flexible fibers supported by the shaft in positions such that at least some of the fibers engage the semiconductor wafer when the wafer rests on the wafer supports.
    Type: Grant
    Filed: September 16, 2008
    Date of Patent: May 29, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: John A. Pitney, Thomas A. Torack
  • METHODS FOR MONITORING THE AMOUNT OF METAL CONTAMINATION IN A PROCESS
    Publication number: 20120115258
    Abstract: Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants.
    Type: Application
    Filed: January 18, 2012
    Publication date: May 10, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Jeffrey L. Libbert, Lu Fei
  • Production of Polycrystalline Silicon By The Thermal Decomposition of Trichlorosilane In A Fluidized Bed Reactor
    Publication number: 20120100059
    Abstract: Processes for producing polycrystalline silicon by thermal decomposition of trichlorosilane are disclosed. The processes generally involve thermal decomposition of trichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.
    Type: Application
    Filed: October 22, 2010
    Publication date: April 26, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Satish Bhusarapu, Yue Huang, Puneet Gupta, Milind S. Kulkarni
  • Production of Polycrystalline Silicon in Substantially Closed-loop Processes
    Publication number: 20120100061
    Abstract: Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.
    Type: Application
    Filed: October 22, 2010
    Publication date: April 26, 2012
    Applicant: MEMC Electronic Materials, Inc.
    Inventors: Satish Bhusarapu, Yue Huang, Puneet Gupta
  • Production of Polycrystalline Silicon in Substantially Closed-Loop Systems
    Publication number: 20120100042
    Abstract: Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.
    Type: Application
    Filed: October 22, 2010
    Publication date: April 26, 2012
    Applicant: MEMC Electronic Materials, Inc.
    Inventors: Satish Bhusarapu, Yue Huang, Puneet Gupta
  • Methods for generating representations of flatness defects on wafers
    Patent number: 8165706
    Abstract: Methods are disclosed for generating a representation of flatness defects on a wafer. Data is received describing the thickness of the wafer at a plurality of points on a wafer divided into a plurality of sites. A reference plane is defined for each of the plurality of sites. For each of the sites, an upper plane and a lower plane are defined relative to the reference plane. A determination is made as to which of the plurality of points on the wafer represents a flatness defect by identifying which points are not disposed between the upper plane and lower plane. A representation is then generated depicting a location of each of the flatness defects on the wafer. In some embodiments, a single representation is generated depicting the location of flatness defects on a plurality of wafers.
    Type: Grant
    Filed: December 29, 2009
    Date of Patent: April 24, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventor: John A. Pitney
  • METHODS FOR CROPPING A CYLINDRICAL INGOT
    Publication number: 20120085332
    Abstract: Methods for cropping a cylindrical ingot and, in some particular embodiments, for cropping a multicrystalline ingot such as a multicrystalline silicon ingot.
    Type: Application
    Filed: December 14, 2011
    Publication date: April 12, 2012
    Applicant: MEMC SINGAPORE PTE. LTD. (UEN200614794D)
    Inventor: Steven L. Kimbel
  • Process for annealing semiconductor wafers with flat dopant depth profiles
    Patent number: 8153538
    Abstract: A process is disclosed for annealing a single crystal silicon wafer having a front surface and a back surface, and an oxide layer disposed on the front surface of the wafer extending over substantially all of the radial width. The process includes annealing the wafer in an annealing chamber having an atmosphere comprising oxygen. The process also includes maintaining a partial pressure of water above a predetermined value such that the wafer maintains the oxide layer through the annealing process. The annealed front surface is substantially free of boron and phosphorus.
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: April 10, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Larry Wayne Shive, Brian Lawrence Gilmore
  • Processes for Recovering Silane From Heavy-Ends Separation Operations
    Publication number: 20120080304
    Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.
    Type: Application
    Filed: October 5, 2010
    Publication date: April 5, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Zhihui Gu, Timothy D. Truong, Puneet Gupta
  • SYSTEMS FOR PURIFYING SILANE
    Publication number: 20120079848
    Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.
    Type: Application
    Filed: September 27, 2011
    Publication date: April 5, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Timothy Dinh Truong, Zhihui Gu, Puneet Gupta
  • PROCESSES FOR PURIFYING SILANE
    Publication number: 20120079847
    Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.
    Type: Application
    Filed: September 27, 2011
    Publication date: April 5, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Timothy Dinh Truong, Zhihui Gu, Puneet Gupta
  • Systems for Recovering Silane From Heavy-Ends Separation Operations
    Publication number: 20120080303
    Abstract: Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.
    Type: Application
    Filed: October 5, 2010
    Publication date: April 5, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Zhihui Gu, Timothy D. Truong, Puneet Gupta
  • Crystal puller and method for growing a monocrystalline ingot
    Patent number: 8147613
    Abstract: A crystal puller for growing monocrystalline ingots includes a side heater adjacent a crucible for heating the crucible and a melt heat exchanger sized and shaped for surrounding the ingot and disposed adjacent a surface of the melt. The heat exchanger includes a heat source having an area for radiating heat to the melt for controlling heat transfer at the upper surface of the melt. The melt heat exchanger is adapted to reduce heat loss at the exposed upper surface portion. Methods for growing single crystal silicon crystals having desired defect characteristics are disclosed.
    Type: Grant
    Filed: November 10, 2003
    Date of Patent: April 3, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventor: Milind Kulkarni
  • Low Thermal Mass Semiconductor Wafer Plate
    Publication number: 20120074081
    Abstract: A support for a semiconductor wafer includes a plate having a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.
    Type: Application
    Filed: September 14, 2011
    Publication date: March 29, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Brian Lawrence Gilmore, Lance G. Hellwig
  • Adapter Ring For Silicon Electrode
    Publication number: 20120073752
    Abstract: Methods and systems are provided for retrofitting wafer etching systems. The methods and systems use an adapter ring to retrofit wafer etching systems designed for use with multiple piece electrodes such that single piece electrodes can be used in the etching systems. A portion of the adapter ring is disposed in a receptacle formed in a thermal coupled plate in the wafer etching system. Another portion of the adapter ring is positioned in a channel formed in an upper electrode.
    Type: Application
    Filed: September 20, 2011
    Publication date: March 29, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventor: Terry Parde
  • Low Thermal Mass Semiconductor Wafer Boat
    Publication number: 20120077138
    Abstract: A wafer boat for a semiconductor wafer includes vertical rods, fingers supported by the vertical rods, and plates supported by the fingers. The plate has a support surface for supporting the wafer and a recessed surface spaced from the support surface and spaced from the wafer. A plurality of holes extends from the recessed surface, and the support surface is free of holes to inhibit contamination of the wafer.
    Type: Application
    Filed: September 14, 2011
    Publication date: March 29, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Brian Lawrence Gilmore, Lance G. Hellwig
  • Methods for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing
    Patent number: 8143078
    Abstract: Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants.
    Type: Grant
    Filed: December 16, 2010
    Date of Patent: March 27, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Jeffrey L. Libbert, Lu Fei
  • Methods and systems for adjusting operation of a wafer grinder using feedback from warp data
    Patent number: 8145342
    Abstract: Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.
    Type: Grant
    Filed: September 27, 2010
    Date of Patent: March 27, 2012
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Sumeet S. Bhagavat, Roland R. Vandamme, Tomomi Komura, Tomhiko Kaneko, Takuto Kazama
  • METHODS TO RECOVER AND PURIFY SILICON PARTICLES FROM SAW KERF
    Publication number: 20120027660
    Abstract: The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw material.
    Type: Application
    Filed: October 13, 2011
    Publication date: February 2, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Alexis Grabbe, Tracy M. Ragan
  • Grinding Tool For Trapezoid Grinding Of A Wafer
    Publication number: 20120028555
    Abstract: A grinding tool for trapezoid grinding of a wafer on a profiling machine includes an annular wheel including a central hole adapted for mounting the wheel on a spindle. The wheel includes at least two grooves disposed at an outer edge of the wheel and the grooves are sized for receiving an outer edge of the wafer. At least one of the grooves is adapted for rough grinding of the wafer. At least one other of the grooves is adapted for fine grinding of the wafer.
    Type: Application
    Filed: July 30, 2010
    Publication date: February 2, 2012
    Applicant: MEMC ELECTRONIC MATERIALS, INC.
    Inventors: Guoqiang David Zhang, Roland Vandamme, Peter D. Albrecht