Abstract: Briefly, in accordance with one or more embodiments, a piezoresistive stress sensor comprises a plurality of piezoresistive elements coupled in a bridge circuit disposed on, near, or contiguous to a flexure to detect torsional flexing about an axis of the flexure. The bridge circuit has at least two nodes disposed along the axis of the flexure and at least two nodes disposed off the axis of the flexure to maximize, or nearly maximize, an output of the bridge circuit in response to the torsional flexing of the flexure. A torsional flexing component of the output signal of the bridge circuit is relatively increased with respect to a component of the output signal generated by non-torsional stress of the flexure, or a component of the output signal generated by non-torsional stress of the flexure is reduced with respect to the torsional flexing component of the output signal, or combinations thereof.

Abstract: This invention provides a design to process a large range of detection beam current at low noise with a single detector. With such a design, the detection system can generate up to 1010 gain and maximum signal output at more than mini Ampere (mA) level. A condenser lens is configured to increase bandwidth of the detector that scan speed can be enhanced.

Abstract: The present invention introduces a metal seal flange assembly for a vacuum system. A new designed metal gasket has a crosses-section shape of irregular quadrangle with two sharp angle forms by the longer base and legs. The long base of the irregular quadrangle is the vertical inner wall of the metal gasket. A preferred cross section shape of the metal gasket is trapezoid or isosceles trapezoid. this design can reduce the normal force applied to the metal seal flange assembly and reduce the number of bolts used in a limit working space.

Abstract: The present invention provides two ways to form a special permeability discontinuity unit inside every sub-lens of a multi-axis magnetic lens, which either has a simpler configuration or has more flexibility in manufacturing such as material selection and mechanical structure. Accordingly several types of multi-axis magnetic lens are proposed for various applications. One type is for general application such as a multi-axis magnetic condenser lens or a multi-axis magnetic transfer lens, another type is a multi-axis magnetic non-immersion objective which can require a lower magnetomotive force, and one more type is a multi-axis magnetic immersion objective lens which can generate smaller aberrations. Due to using permeability-discontinuity units, every multi-axis magnetic lens in this invention can also be electrically excited to function as a multi-axis electromagnetic compound lens so as to further reduce aberrations thereof and/or realize electron beam retarding for low-voltage irradiation on specimen.

Abstract: Briefly, in accordance with one or more embodiments, a beam scanner may comprise a nanophotonics chip to provide a scanned output beam. The nanophotonics chip comprises a substrate, a grating in-coupler formed in the substrate to couple a beam from a light source into the substrate, a modulator to modulate the beam, and a photonic crystal (PC) superprism to provide a scanned output beam that is scanned in response to the modulated beam.

Abstract: An assembly for a charged particle detection unit is described. The assembly comprises a scintillator disc, a partially coated light guide a thin metal tube for allowing the primary charged particle beam to pass through and a photomultiplier tube (PMT). The shape of scintillator disc and light guide are redesigned to improved the light signal transmission thereafter enhance the light collection efficiency. A light guide with a conicoidal surface over an embedded scintillator improved the light collection efficiency of 34% over a conventional design.

Abstract: The present application discloses systems and methods for the comprehensive monitoring of the microcirculation in order to assess the ultimate efficacy of the cardiovascular system in delivering adequate amounts of oxygen to the organ cells. In some cases, system embodiments may utilize reflectance avoidance by reflectance filtering, such as OPS imaging or Mainstream Dark Field imaging, or by Sidestream Dark Field imaging, which utilizes external direct light on the tip of the light guide to achieve reflectance avoidance whereby incident and reflected light do not travel down the same pathway.

Abstract: Briefly, in accordance with one more embodiments, a substrate guided relay for a photonics module includes a slab guide having a first end and a second end, and a first surface and a second surface. An input coupler disposed at the first end of the slab guide at an interface between the input coupler and the slab guide receives an input beam and feeds the input beam into the slab guide which generates multiple copies of the input beam. An output coupler disposed on the first surface of the slab guide causes the multiple copies of the input beam to exit the slab guide via the output coupler as an output. A homogenizer disposed on the second surface of the slab guide reflects at least some of the multiple copies of the input beam to increase uniformity of the output.

Abstract: The present invention relates to a charged particle system for reticle or semiconductor wafer defects inspection and review, and more particularly, relates to an E-beam inspection tool for reticle or semiconductor wafer defects inspection and review without gravitational AMC settling. The charged particle system is an upside down electron beam inspection system with an electron beam aimed upward. The face down design may prevent AMC from gravitational settling on the inspected face of the specimen during inspection, thereafter having a cleaner result compared with conventional face-up inspection system.

Abstract: Briefly, in accordance with one or more embodiments, an input device may be utilized in conjunction with a scanned beam display or the like, or may be based on the scanning platform as used in a scanned beam display such as a MEMS based scanner. An input event such as illumination of a photodetector or reflection of a scanned beam off of a retroreflector may be correlated with a timing event of the scanning platform such as a refresh signal, or a horizontal and vertical sync signals. The correlation of the timing event may be representative of an X-Y location, and in some embodiments of a Z location, that may be utilized to provide input data back to a host device.

Abstract: A drive circuit includes a generator and a driver. The generator generates a signal having a period and a varying amplitude during a driving portion of the period, and the driver is coupled to the generator and drives a plate of an electrostatically drivable plant with the signal. The drive circuit may be used to drive a mirror plate of a comb-drive MEMS mirror.

Abstract: A scanning projector includes a MEMS device with a scanning mirror that sweeps a light beam in two dimensions. A laser limit comparison circuit determines a metric from measured peak scan angles and measured light output. The metric is compared to a threshold and a light source is shut down when the metric exceeds the threshold.

Abstract: An image projection system (103) includes an image projector (104) and an image orientation device (106). The image orientation device (106) can be configured to cause a reference line (110) associated with an image (108) to remain aligned in a predetermined orientation on a projection surface (109) regardless of projection system motion. A second image orientation device (206) can be included as well. The second image orientation device (206) can be configured to cause portions of an image (208) to move with projection system motion while a reference line (210) remains stable.

Abstract: A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.

Abstract: A piezoelectric actuated device includes one or more areas of piezoelectric material coupled to a substrate. The piezoelectric material may be placed on regions of the substrate that exhibit the greatest curvature and stress when the device is vibrating according to a desired structural Eigenmode of vibration. The piezoelectric material may have a non-uniform density.

Abstract: A method, apparatus and computer readable medium for charged particle beam inspection of a sample comprising at least one sampling region and at least one skip region is disclosed. The method, apparatus and computer readable medium comprise receiving an imaging recipe which at least comprises information of the area of the sampling and skip regions; calculating a default stage speed according to the imaging recipe; calculating an alternative stage speed at least according to the default stage speed, the sampling region area information, and the skip region area information; calculating at least one imaging scan compensation offset at least according to the alternative stage speed; and inspecting the sample at the alternative stage speed while adjusting the motion of the charged particle beam according to the imaging scan compensation offsets, such that the charged particle beam tightly follows the motion of the stage and images only the sampling regions on the sample.

Abstract: A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.

Abstract: An apparatus determines a cursor position in an illumination field of a projector. An obstruction is detected in the illumination field. The cursor position is determined as the point on the obstruction furthest from where the obstruction crosses a border of the illumination field. A distance to the point on the obstruction is determined and compared to a distance to a point not on the obstruction. Gestures are recognized as a function of movement of the obstruction and the determined distances.

Abstract: A cellular-type PD unit is proposed and a plurality of the cellular-type PD units is used in pairs in a multi-axis magnetic lens for focusing a plurality of charged beams. First type PD units or second type PD units (called as hybrid PD unit as well) can be applied to cellular-type PD units to flexibly construct sub-lenses. Furthermore, magnetic shielding plates with a plurality of through openings can be placed above and/or below the multi-axis magnetic lens to make magnetic flux leaking out of the multi-axis magnetic lens vanish away rapidly outside the magnetic shielding plates.

Abstract: A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.