Abstract: A slit copper material, a purity of Cu is comprises 99.96% by mass or greater of Cu. In this slit copper material, a ratio W/t of a plate width W to a plate thickness t is 10 or greater, an electrical conductivity is 97.0% IACS or greater, a ratio B/A of an average crystal grain size B in a plate surface layer portion to an average crystal grain size A in a plate center portion is in a range of 0.80 or greater and 1.20 or less, and the average crystal grain size A in the plate center portion is 25 ?m or less.

Abstract: What is provided is a method for separating cobalt and nickel including: a crushing and sorting step of crushing and classifying the lithium ion secondary battery to obtain an electrode material containing at least cobalt, nickel, copper, and lithium; a leaching step of immersing the electrode material in a processing liquid containing sulfuric acid and hydrogen peroxide to obtain a leachate; a copper separation step of adding a hydrogen sulfide compound to the leachate with stirring and subsequently carrying out solid-liquid separation to obtain an eluate containing cobalt and nickel and a residue containing copper sulfide; and a cobalt/nickel separation step of adding an alkali metal hydroxide to the eluate to adjust a pH and subsequently, adding a hydrogen sulfide compound with stirring and carrying out solid-liquid separation to obtain a precipitate containing cobalt sulfide and nickel sulfide and a residual liquid containing lithium.

Abstract: A copper alloy plastically-worked material comprises Mg in the amount of 10-100 mass ppm and a balance of Cu and inevitable impurities, which comprise 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi and 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio of [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 or greater and 50 or less. The electrical conductivity is 97% IACS or greater. The tensile strength is 275 MPa or less. The heat-resistant temperature after draw working is 150° C. or higher.

Abstract: The plasma-resistant coating film according to the present invention is formed on a substrate, including crystalline Y2O3 particles having an average particle diameter of 0.5 ?m to 5.0 ?m in a SiO2 film, in which a film density of the plasma-resistant coating film is 90% or more, the film density being obtained by performing image analysis of a cross section of the film with an electron scanning microscope and by using the following expression (1), a size of pores in the film is 5 ?m or less in terms of diameter, and a peeling rate of the film from the substrate measured by performing a cross-cut test is 5% or less. Film density (%)=[(S1?S2)/S1]×100 (1). However, in the expression (1), S1 is an area of the film and S2 is an area of a pore portion in the film.

Abstract: A method of recovering cobalt and nickel includes the steps of: adding alkaline to an acidic solution containing aluminum together with cobalt and nickel, adjusting pH of the acidic solution to 5 to 7, and converting the cobalt, the nickel and the aluminum into hydroxides thereof; recovering the hydroxides by solid-liquid separation, mixing the recovered hydroxides with an alkaline solution, and leaching aluminum contained in the hydroxides under a liquid condition of pH 8 or more; and recovering a cobalt hydroxide and a nickel hydroxide that aluminum is separated therefrom by solid-separation on a leachate.

Abstract: A base material at least a surface is made of copper or copper alloy and a silver-nickel-potassium alloy plating layer formed on at least a part of the base material are provided; the silver-nickel-potassium alloy plating layer has a film thickness of 0.5 ?m or more and 20.0 ?m or less, a nickel content of 0.02% by mass or more and 0.60% by mass or less, and a potassium content of 0.03% by mass or more and 1.00% by mass or less; and an average crystal grain size of the silver-nickel-potassium alloy plating layer is preferably 10 nm or more and 150 nm or less.

Abstract: A terminal material for a connector provided with a base material in which at least a surface layer is made of copper or copper alloy, a nickel-plating layer made of nickel or nickel alloy and formed on a surface of the base material, a silver-nickel alloy plating layer made of silver-nickel alloy and formed on at least a part of the nickel-plating layer, and a silver-plating layer made of silver and formed on the silver-nickel alloy plating layer; the silver-nickel alloy plating layer has a film thickness 0.05 µm or more and less than 0.50 µm and a nickel content 0.03 at% or more and 1.00 at% or less.

Abstract: The present invention is provided with a base electrode layer forming step of forming a base electrode layer on both surfaces of a thermistor wafer formed of a thermistor material, a chip forming step of obtaining a thermistor chip with a base electrode layer by cutting the thermistor wafer to form chips, a protective film forming step of forming a protective film formed of an oxide on an entire surface of the thermistor chip with a base electrode layer, a cover electrode layer forming step of forming a cover electrode layer by applying and sintering a conductive paste on an end surface of the thermistor chip with a base electrode layer, and a conduction heat treatment step of performing a heat treatment such that the base electrode layer and the cover electrode layer are electrically conductive, in which the electrode portion is formed.

Abstract: In a method for producing high-purity electrolytic copper, a first additive (A) containing an aromatic ring of a hydrophobic group and a polyoxyalkylene group of a hydrophilic group, a second additive (B) formed of polyvinyl alcohols, and a third additive (C) formed of tetrazoles are added to a copper electrolyte, copper electrolysis is performed by controlling each concentration of the first additive (A), the second additive (B), and the third additive (C), a current density and a bath temperature, and accordingly, electrolytic copper in which a concentration of Ag is less than 0.2 mass ppm, a concentration of S is less than 0.07 mass ppm, a concentration of all impurities is less than 0.2 mass ppm, and an area ratio of crystal grains having an average crystal grain misorientation (referred to as a GOS value) exceeding 2.5° is 10% or less is obtained.

Abstract: A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, the electrical conductivity is 90% IACS or more, and the average value of KAM values is 3.0 or less.

Abstract: A method is provided for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer and a metal layer that are formed on an insulating layer, and the heat sink being bonded to the metal layer side. The method includes: an aluminum bonding layer forming step of forming an aluminum bonding layer formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower on the metal layer; and a heat sink bonding step of laminating a copper bonding material formed of copper or a copper alloy between the aluminum bonding layer and the heat sink and bonding the aluminum bonding layer, the copper bonding material, and the heat sink to each other by solid phase diffusion bonding.

Abstract: A chip discharging flute is formed in a tip outer peripheral portion of a drill body rotated around an axis in a drill rotation direction. A cutting edge is formed in an intersection ridgeline portion between a wall surface of the chip discharging flute facing the drill rotation direction and a tip flank. The cutting edge includes a main cutting edge portion extending from an inner peripheral side toward an outer peripheral side of the drill body, and a cutting edge shoulder portion extending from an outer peripheral end of the main cutting edge portion to an outer periphery of the drill body, and is subjected to honing. Compared to the outer peripheral end of the main cutting edge portion, in an outer peripheral end of the cutting edge shoulder portion, a true rake angle is increased on a negative rake angle side, and a size of the honing decreases.

Abstract: A corrosion-resistant terminal material for an aluminum core wire having a good adhesion of plating and a high effect of corrosion resistant, having a base material in which at least a surface is made of copper or copper alloy and a corrosion-resistant film formed on at least a part of the base material; the corrosion film having an intermediate alloy layer made of tin alloy, a zinc layer made of zinc or zinc alloy formed on the intermediate alloy layer, and a tin-zinc alloy layer made of tin alloy containing zinc and formed on the zinc layer; and a tin content in the intermediate alloy layer is 90 at % or less.

Abstract: This copper alloy for electronic or electric devices contains 100 mass ppm or greater and 400 mass ppm or less of Mg, 5 mass ppm or greater and 20 mass ppm or less of Ag, and less than 5 mass ppm of P with a balance being Cu and inevitable impurities, in which when a ratio of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to all grain boundary triple junctions is defined as NFJ3 and a ratio of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary constituting the grain boundary triple junction is a random grain boundary, to all grain boundary triple junctions is defined as NFJ2, an expression of 0.22<(NFJ2/(1?NFJ3))0.5?0.45 is satisfied.

Abstract: This copper alloy contains greater than 10 mass ppm and less than 100 mass ppm of Mg, with a balance being Cu and inevitable impurities, which comprise: 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, and 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50, an electrical conductivity is 97% IACS or greater. The half-softening temperature ratio TLD/TTD is greater than 0.95 and less than 1.08. The half-softening temperature TLD is 210° C. or higher.

Abstract: Providing a terminal material for connectors provided with a base material in which at least a surface layer is made of copper or copper alloy, a nickel-plating layer made of nickel or nickel alloy coating a surface of the base material, and a silver-nickel alloy plating layer formed on at least a part of the nickel-plating layer, the silver-nickel alloy plating layer having a film thickness of 0.5 ?m to 20 ?m inclusive, a nickel content of 0.03 at % to 1.20 at % inclusive, and an average crystal grain size of 10 nm to 150 nm inclusive, to improve abrasion resistance and heat resistance.

Abstract: A copper alloy plastically-worked material comprises Mg in the amount of greater than 10 mass ppm and 100 mass ppm or less and a balance of Cu and inevitable impurities, that comprise 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, and 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio of [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 or greater and 50 or less, the electrical conductivity is 97% IACS or greater. The tensile strength is 200 MPa or greater. The heat-resistant temperature is 150° C. or higher.

Abstract: This copper alloy of one aspect contains greater than 10 mass ppm and less than 100 mass ppm of Mg, with a balance being Cu and inevitable impurities, in which among the inevitable impurities, a S amount is 10 mass ppm or less, a P amount is 10 mass ppm or less, a Se amount is 5 mass ppm or less, a Te amount is 5 mass ppm or less, an Sb amount is 5 mass ppm or less, a Bi amount is 5 mass ppm or less, an As amount is 5 mass ppm or less, a total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less, a mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50, an electrical conductivity is 97% IACS or greater, and a residual stress ratio at 150° C. for 1000 hours is 20% or greater.

Abstract: This copper alloy contains 10-100 mass ppm of Mg, with a balance being Cu and inevitable impurities, which comprise; 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50. The electrical conductivity is 97% IACS or greater. The half-softening temperature is 200° C. or higher. The residual stress ratio RSG at 180° C. for 30 hours is 20% or greater. The ratio RSG/RSB at 180° C. for 30 hours is greater than 1.0.

Abstract: A CO2 separation/recover method in cement production exhaust gas has a step of harmful component removal that removes an acidic component and a harmful component from exhaust gas discharged from a cement production facility; and a step of CO2 separation and recover that separates and recovers CO2 by bringing the exhaust gas from which the acidic component and the harmful component are removed into contact with a CO2 absorption material, so that the acidic component and the harmful component are removed before separating and recovering CO2, resulting in deterioration of the absorbing ability of the CO2 absorption material being suppressed; and the cement production exhaust gas can be appropriately disposed.