Patents Assigned to Mitsui
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Publication number: 20030155634Abstract: A lead frame for a semiconductor device. The lead frame has opposite first and second sides bounded respectively by first and second parallel reference planes between which a thickness is defined. The lead frame has a support with a surface at the first side of the lead frame for receiving a semiconductor chip. A plurality of leads are spaced from the support to be electrically connected to a semiconductor chip on the support. A first lead in the plurality of leads has a length between first and second ends and a width taken transversely to the length. The first end of the first lead has a first region that has a thickness less than the thickness of the first lead at the second end of the first lead so that at least a part of the first region is offset from the second reference plane toward the first reference plane. The first end of the first lead has at least a first protrusion projecting away from the first reference plane.Type: ApplicationFiled: December 18, 2002Publication date: August 21, 2003Applicant: Mitsui High-tec, Inc.Inventors: Shoshi Yasunaga, Takahiro Ishibashi, Hiroaki Narimatsu
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Method of manufacturing semiconductor devices and semiconductor devices made according to the method
Patent number: 6607940Abstract: A method of manufacturing semiconductor devices. The method includes the steps of: providing a lead frame assembly having oppositely facing first and second sides; mounting a first semiconductor chip on the first side of the lead frame assembly; mounting a second semiconductor chip on the second side of the lead frame assembly; electrically connecting the first semiconductor chip to a first lead on the lead frame assembly; electrically connecting the second semiconductor chip to a second lead on the lead frame assembly; applying sealing resin to the first and second sides of the lead frame assembly with the first and second semiconductor chips mounted thereon; and after applying sealing resin, separating the lead frame assembly into first and second semiconductor devices. The first semiconductor device consists of a first portion of the lead frame assembly, the first semiconductor chip thereon, and the first lead electrically connected to the first semiconductor chip.Type: GrantFiled: February 21, 2001Date of Patent: August 19, 2003Assignee: Mitsui High-tec Inc.Inventor: Shoshi Yasunaga -
Patent number: 6607222Abstract: A vehicle door latch device comprises a one-motion door opening mechanism transmitting an opening movement of an inside open handle both to a lock lever and to a ratchet, an free-play type antitheft member, and a clutch mechanism provided between the one-motion mechanism and the inside open handle. The clutch mechanism is so connected to the antitheft member that the clutch mechanism is displaced to an uncoupling state where it does not transmit the opening movement to the one-motion mechanism when the antitheft member is changed over to a antitheft position, and that the clutch mechanism is displaced to a coupling state where it transmits the opening movement to the one-motion mechanism when the antitheft member is changed over to an antitheft cancelled position.Type: GrantFiled: December 28, 2000Date of Patent: August 19, 2003Assignee: Mitsui Kinzoku Kogyo Kabushiki KaishaInventor: Jiro Inoue
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Patent number: 6607569Abstract: Disclosed is a method of estimating the outflow amount for each component of the effluent of a coal liquefying reactor consisting of vessel type reactors (16a, 16b, 16c) operated under a high temperature and a high pressure. The outflow amount for each component of the effluent is assumed, and the gas-liquid equilibrium composition of the mixture of the composition within the reaction vessel is calculated. Further, the volume flow rates of the gaseous phase and the liquid phase within the reaction vessel are calculated, and the residence time (&tgr;1G, &tgr;2G, &tgr;3G), (&tgr;1S, &tgr;2S, &tgr;3S) of each of the gaseous phase and the liquid phase is calculated on the basis of the gas hold-up within the reaction vessel calculated on the basis of the volume flow rate and the empirical formula. The outflow amount for each component of the effluent is calculated on the basis of the residence time (&tgr;1, &tgr;, . . .Type: GrantFiled: October 13, 2000Date of Patent: August 19, 2003Assignees: Sumitomo Metal Industries, Ltd., Idemitsu Kosan Co., Ltd., Nippon Steel Corporation, Chiyoda Corporation, NKK Corporation, Mitsui Engineering & Shipbuilding Co., Ltd., Mitsubishi Heavy Industries, Ltd., Japan Energy Corporation, Sumitomo Metal Mining Co., Ltd., Asahi Kasei Kogyo Kabushiki Kaisha, Sumitomo Coal Mining Co., Ltd., The Japan Steel Works, Ltd., Yokogawa Electric CorporationInventors: Yasuki Namiki, Masatoshi Kobayashi, Akira Kidoguchi, Hidenobu Itoh, Masataka Hiraide, Kunihiro Imada, Kenji Inokuchi
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Patent number: 6606792Abstract: A process for forming printed circuit substrates incorporating impedance elements in which a pattern of impedance elements and a conductor pattern are incorporated on an insulating support. The process involves depositing a layer of an impedance material on a first surface of a sheet of an electrically highly conductive material and attaching a second surface of the sheet of highly conductive material to a support. Then one applies a layer of a photoresist material onto the layer of impedance material with imagewise exposure and development. After etching away the portion of the impedance layer material underlying the removed nonimage areas of the photoresist material, a pattern of impedance elements remain on the sheet of highly conductive material. Thus printed circuit board with impedance elements can be manufactured to a high degree of electrical tolerance.Type: GrantFiled: May 25, 2000Date of Patent: August 19, 2003Assignee: Oak-Mitsui, Inc.Inventor: John A. Andresakis
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Publication number: 20030153248Abstract: A p-type thermoelectric material is prepared by mixing and melting at least two members selected from bismuth, tellurium, selenium, antimony, and sulfur to obtain an alloy ingot, grinding the alloy ingot to obtain powder of the allow mass; and hot pressing the powder. At least the hot pressing is carried out in the presence of any one of hexane and solvents represented by CnH2n+1OH or CnH2n+2CO (where n is 1, 2 or 3). A dopant may be used at the step of mixing.Type: ApplicationFiled: February 13, 2003Publication date: August 14, 2003Applicant: MITSUI MINING & SMELTING CO., LTD.Inventors: Norihiko Miyashita, Tomoyasu Yano, Ryoma Tsukuda, Isamu Yashima
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Patent number: 6604417Abstract: A strainer integrated flowmeter 210 is constituted by a strainer section 203 provided with a housing 202 having a flow passage 207 formed therein, a filter member 209 and a filter member insertion cylinder 210; and a flowmeter section 204 provided with a housing 202 having a flow passage 208 formed therein and a flow rate sensor 226. The housings 202 of both the strainer section 203 and flowmeter section 204 are integrated, and the flowmeter section 204 is disposed at downstream side. A vent hole 215 is formed in the housing 202 so as to be in communication with the flow passage 207.Type: GrantFiled: February 20, 2001Date of Patent: August 12, 2003Assignee: Mitsui Mining & Smelting Co., Ltd.Inventors: Atsushi Koike, Kiyoshi Yamagishi, Kenichi Hiraizumi, Takayuki Takahata
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Patent number: 6605369Abstract: The present invention is directed to provision of a surface-treated copper foil exhibiting a maximum effect of a silane coupling agent which is adsorbed onto the copper foil and is employed in order to enhance adhesion between the copper foil and a substrate during manufacture of printed wiring boards. The invention is also directed to provision of a method for producing such a copper foil. To attain these goals, a surface-treated copper foil for producing printed wiring boards is provided, wherein an anti-corrosion treatment comprises forming a zinc layer or a zinc alloy layer on a surface of the copper foil and forming an electrodeposited chromate layer on the zinc or zinc alloy layer; forming a silane-coupling-agent-adsorbed layer on the electrodeposited chromate layer without causing the electrodeposited chromate layer of the nodular-treated surface to dry; and drying.Type: GrantFiled: August 14, 2001Date of Patent: August 12, 2003Assignee: Mitsui Mining & Smelting Co., Ltd.Inventors: Naotomi Takahashi, Yutaka Hirasawa
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Publication number: 20030148136Abstract: The purpose is to provide a surface treated copper foil and an electrodeposited copper foil with carrier to be employed for a copper clad laminate capable to be processed for simultaneous hole formation in the copper foil layer and a substrate resin layer using carbon dioxide gas laser. The purpose can be achieved by using a surface treated copper foil bearing a nickel layer or a cobalt layer with a prescribed thickness in one side of a copper foil or an electrodeposited copper foil with carrier provided with a nickel layer or a cobalt layer with a prescribed thickness between a carrier foil and an electrode posited copper foil layer. When a copper clad laminate is manufactured using these foils, the copper clad laminate is capable to be processed to easily and simultaneously form a hole in the copper foil layer and the substrate resin layer using carbon dioxide gas laser.Type: ApplicationFiled: February 7, 2002Publication date: August 7, 2003Applicant: Mitsui Mining & Smelting Co. Ltd.Inventors: Takuya Yamamoto, Takashi Kataoka, Yutaka Hirasawa, Naotomi Takahashi
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Publication number: 20030149230Abstract: A polymerizable composition for a lens with a high refractive index comprising at least one polythiol compound represented general formula (1):Type: ApplicationFiled: December 11, 2002Publication date: August 7, 2003Applicant: Mitsui Chemicals, Inc.Inventors: Mamoru Tanaka, Shigetoshi Kuma, Seiichi Kobayashi, Yoshinobu Kanemura
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Publication number: 20030144381Abstract: Pastes for circuit connections and anisotropic conductive pastes that are excellent in storage stability and dispenser application properties, can be free of voids, bubbles and bleeding on thermocompression bonding and can give cured products having high bonding and connection reliability at high temperatures and high humidity, and the ability to be repaired. The paste for circuit connection contains an epoxy resin, an acid anhydride curing agent or a phenolic curing agent, and high-softening point fine particles. The anisotropic conductive paste additionally contains conductive particles. The method of using the paste for circuit connection or the anisotropic conductive paste involves connecting an electric circuit wiring formed on a substrate with an electric circuit wiring formed on another substrate with the paste for circuit connection or the anisotropic conductive paste.Type: ApplicationFiled: December 2, 2002Publication date: July 31, 2003Applicant: Mitsui Chemicals, Inc.Inventors: Yasushi Mizuta, Tatsuji Murata, Makoto Nakahara, Takatoshi Kira, Daisuke Ikesugi
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Patent number: 6599981Abstract: This invention relates to a method for manufacturing an olefinic thermoplastic elastomer composition, characterized by disposing specific kneading segment at least at one place of the screw on the occasion of manufacturing an olefinic thermoplastic elastomer composition comprising a polyolefin resin and a crosslinked rubber by dynamic crosslinking with a twin screw extruder.Type: GrantFiled: November 16, 2001Date of Patent: July 29, 2003Assignee: Mitsui Chemicals, Inc.Inventors: Yuichi Itoh, Akira Uchiyama
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Patent number: 6599675Abstract: A polyimide having a repeating unit of the general formula (I) and a polyamic acid having a repeating unit of the formula (IV): (wherein, R1 and R2 represent H or a C1 to C20 alkyl group, and Z represents a condensed polycyclic aromatic group or an group of the following formulae: Herein, X represents —CO— or —C(═N2)—, Y represents a direct bond, —CH2—, —O—, —SO2—, —S—, —CO— or —C(═N2)—, and W represents a direct bond, —CH2—, —C(CH3)2—, —C(CF3)2—, —S—, —SO—, —SO2— or —O—, b, m and n are 0 or 1; r is a C1 to 4 alkyl group, halogen group or phenyl group; a is 0 or 1 to 3).Type: GrantFiled: December 19, 2001Date of Patent: July 29, 2003Assignee: Mitsui Chemicals, Inc.Inventors: Jun Kamada, Ken-ichi Goto, Takashi Kuroki, Shoji Tamai
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Patent number: 6599984Abstract: A blend of a rubber and a rubber modifier, the rubber modifier comprising an ethylene/&agr;-olefin copolymer rubber (A) composed of one or more copolymers selected from the group consisting of a copolymer of ethylene and an &agr;-olefin having 3-20 carbon atoms and a copolymer of ethylene, an &agr;-olefin having 3-20 carbon atoms and a non-conjugated polyene, the copolymer rubber (A) having the parameters: an ethylene/&agr;-olefin mole ratio in the range of 51/49 to 87/13, an intrinsic viscosity [&eegr;] determined in decahydronaphthalene at 135° C. in the range of 0.8 to 2.5 dl/g and an iodine value in the range of 0 to 40.Type: GrantFiled: April 21, 2000Date of Patent: July 29, 2003Assignee: Mitsui Chemicals, Inc.Inventors: Masaaki Kawasaki, Taku Koda, Takashi Hakuta, Tetsuo Tojo
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Patent number: 6596392Abstract: The sheathed wire or cable of the invention is obtained by coating an outermost layer of a wire or cable with a polyethylene resin produced by polymerization using a single-site catalyst. The polyethylene resin preferably has the properties: (i) the 50% crack occurrence time (F50), that becomes an indication of stress crack resistance, is not less than 600 hours, (ii) the abrasion wear as measured by a Taber abrasion test is not more than 10 mg, and (iii) the Izod impact strength (notched) as measured at −40° C. is not less than 40 J/m2. In the polyethylene resin, high-pressure low-density polyethylene may be contained. The sheathed wire and cable exhibit excellent stress crack resistance, abrasion resistance and low-temperature impact resistance because their sheaths have stress crack resistance, abrasion resistance and low-temperature impact resistance better than those of conventional polyethylene sheaths.Type: GrantFiled: September 20, 2000Date of Patent: July 22, 2003Assignee: Mitsui Chemicals, Inc.Inventors: Mutsuhiro Tanaka, Shinichi Nagano, Tomohiko Kimura
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Patent number: 6596841Abstract: This invention provides a polymerizable composition for a lens with a high refractive index comprising at least one polythiol compound represented general formula (1): R—(SH2SH)n (1) where R is an organic residue except an aromatic group and n is an integer of at least 1, having at least two intramolecular mercapto groups and at least one compound having an intramolecular functional group which can react with a mercapto group; a resin prepared by polymerizing the composition; an optical element and a lens made of the resin; and a process for preparing a thiol compound comprising the steps of reacting a compound represented by general formula (2): HS—R1(—S—R2)m (2) where m is an integer of at least 1; R1 represents an aromatic, aliphatic, alicyclic or heterocyclic organic residue or aliphatic, alicyclic or heterocyclic organic residue with an aromatic ring or a sulfur atom in its chain; and R2 represents a protective group, with a compound having a functional gType: GrantFiled: March 27, 2001Date of Patent: July 22, 2003Assignee: Mitsui Chemicals, Inc.Inventors: Mamoru Tanaka, Shigetoshi Kuma, Seiichi Kobayashi, Yoshinobu Kanemura
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Publication number: 20030134149Abstract: There is provided a transparent conductive film comprising: a substrate(A), and a transparent conductive layer(B) formed on one main surface of the substrate(A), wherein the layer(B) mainly comprises indium, tin and oxygen atoms, and a resistance variation rate of the layer(B) is 5% or less after 60% to 70% of the surface area of the layer(B) is covered with a 28 wt % aqueous ammonia solution for five hours.Type: ApplicationFiled: November 21, 2002Publication date: July 17, 2003Applicant: Mitsui Chemicals, Inc.Inventors: Takehiro Miyashita, Yukinori Asakawa, Akemi Nakajima, Masato Koyama, Masanori Makino, Akira Suzuki, Satoru Okada
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Patent number: 6593408Abstract: An organic polymer/inorganic fine particle-dispersed aqueous solution having excellent dispersion stability comprising a water-slightly soluble inorganic fine particle (B) having a particle diameter of 500 nm or less obtained by reacting (a) a compound of a second group element in the periodic table with (b) at least one compound selected from organic acids, inorganic acids and salts thereof in the presence of a water-soluble or water-dispersible synthetic high molecular compound (A) having a carboxyl group in a proportion of (A):(B)=10:90 to 99.99:0.01 (weight ratio). The above dispersed aqueous solution can be used as a paper-making chemical, an ink jet recording chemical, medical materials and cosmetic raw materials.Type: GrantFiled: May 11, 2001Date of Patent: July 15, 2003Assignee: Mitsui Chemicals, Inc.Inventors: Toshihiko Takaki, Masaru Tanabe, Hiroshi Itoh, Toshiki Oyanagi
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Patent number: 6592986Abstract: The present invention presents an SMC with which the electrically conductive layer does not break down or become non-uniform during molding and with which molded articles with excellent electromagnetic wave shielding capability and electric conductivity can be produced. This SMC is a thermosetting resin sheet molding compound having at least one continuous layer of electrically conductive fibers with a fiber length of 50 &mgr; to 5 mm, and it is further preferred that electrically conductive powder is uniformly dispersed throughout the entire molding compound. These SMCs can be produced by impregnating a reinforcing material with a thermosetting resin composition which is combined with the above-mentioned electrically conductive fibers, or the electrically conductive fibers and electrically conductive powder, and forming at least one continuous layer of these electrically conductive fibers adjacent to this reinforcement layer.Type: GrantFiled: November 24, 2000Date of Patent: July 15, 2003Assignee: Mitsui Takeda Chemicals Inc.Inventors: Masahiro Hakotani, Koichi Akiyama, Hiromu Miyashita, Takashi Shibata
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Patent number: 6592812Abstract: The present invention provides a heat-resistant and low-electric-resistance aluminum alloy thin film which, even after heat treatment at 300-400° C., exhibits no hillock generation and has a specific resistance of 7 &mgr;&OHgr;·cm or less and also provides a sputtering target material employed for forming such aluminum alloy thin film. The thin film of aluminum alloy of the present invention contains, as components of the alloy, aluminum, carbon, and magnesium, wherein the carbon content and the magnesium content fall within a region defined by the following formulas: X=0.61; X=8; Y=2; and Y=−0.13X+1.3, wherein Y (at %) represents the carbon content by atomic percent and X (at %) represents the magnesium content by atomic percent, and the balance of (X+Y) contains aluminum and unavoidable impurities.Type: GrantFiled: March 26, 2001Date of Patent: July 15, 2003Assignee: Mitsui Mining & Smelting Co., Ltd.Inventors: Takashi Kubota, Hiroshi Watanabe