Patents Assigned to Nanosys, Inc.
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Patent number: 7976646Abstract: Methods for producing electronic grade metal nanostructures having low levels of contaminants are provided. Monolayer arrays, populations, and devices including such electronic grade nanostructures are described. In addition, novel methods and compositions for production of Group 10 metal nanostructures and for production of ruthenium nanostructures are provided, along with methods for recovering nanostructures from suspension.Type: GrantFiled: August 18, 2006Date of Patent: July 12, 2011Assignee: Nanosys, Inc.Inventors: Srikanth Ranganathan, Paul Bernatis, Joel Gamoras, Chao Liu, J. Wallace Parce
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Patent number: 7977007Abstract: The present invention discloses nanowires for use in a fuel cell comprising a metal catalyst deposited on a surface of the nanowires. A membrane electrode assembly for a fuel cell is disclosed which generally comprises a proton exchange membrane, an anode electrode, and a cathode electrode, wherein at least one or more of the anode electrode and cathode electrode comprise an interconnected network of the catalyst supported nanowires. Methods are also disclosed for preparing a membrane electrode assembly and fuel cell based upon an interconnected network of nanowires.Type: GrantFiled: September 19, 2008Date of Patent: July 12, 2011Assignee: Nanosys, Inc.Inventors: Chunming Niu, Calvin Y. H. Chow, Stephen A. Empedocles, J. Wallace Parce
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Publication number: 20110165405Abstract: Graded artificial dielectrics using nanostructures, such as nanowires, are disclosed. The graded artificial dielectric includes a material (typically a dielectric) with a plurality of nanostructures, such as nanowires, embedded within the dielectric material. One or more characteristics of the nanostructures are spatially varied from a first region within the dielectric to a second region within the dielectric to produce permittivity of the graded artificial dielectric that is spatially varied. The characteristics that can be varied include, but are not limited to, nanostructure density, nanostructure length, nanostructure aspect ratio, nanostructure oxide ratio, and nanostructure alignment. Methods of producing graded artificial dielectrics are also provided. A wide range of electronic devices such as antennas can use graded artificial dielectrics with nanostructures to improve performance.Type: ApplicationFiled: October 31, 2006Publication date: July 7, 2011Applicant: Nanosys, Inc.Inventor: Jeffrey Miller
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Publication number: 20110165337Abstract: Methods and systems for applying nanowires and electrical devices to surfaces are described. In a first aspect, at least one nanowire is provided proximate to an electrode pair. An electric field is generated by electrodes of the electrode pair to associate the at least one nanowire with the electrodes. The electrode pair is aligned with a region of the destination surface. The at least one nanowire is deposited from the electrode pair to the region. In another aspect, a plurality of electrical devices is provided proximate to an electrode pair. An electric field is generated by electrodes of the electrode pair to associate an electrical device of the plurality of electrical devices with the electrodes. The electrode pair is aligned with a region of the destination surface. The electrical device is deposited from the electrode pair to the region.Type: ApplicationFiled: January 19, 2011Publication date: July 7, 2011Applicant: NANOSYS, INC.Inventors: J. Wallace Parce, James M. Hamilton, Samuel Martin, Erik Freer
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Patent number: 7972616Abstract: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.Type: GrantFiled: January 12, 2006Date of Patent: July 5, 2011Assignee: Nanosys, Inc.Inventors: Robert S. Dubrow, Lawrence A. Bock, R. Hugh Daniels, Veeral D. Hardev, Chunming Niu, Vijendra Sahi
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Publication number: 20110156003Abstract: The present invention is directed to systems and methods for nanowire growth. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial vertically oriented nanowire growth including providing a substrate material having one or more nucleating particles deposited thereon in a reaction chamber, introducing an etchant gas into the reaction chamber at a first temperature which gas aids in cleaning the surface of the substrate material, contacting the nucleating particles with at least a first precursor gas to initiate nanowire growth, and heating the alloy droplet to a second temperature, whereby nanowires are grown at the site of the nucleating particles. The etchant gas may also be introduced into the reaction chamber during growth of the wires to provide nanowires with low taper.Type: ApplicationFiled: June 30, 2010Publication date: June 30, 2011Applicant: NANOSYS, INC.Inventor: David Taylor
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Patent number: 7968474Abstract: The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.Type: GrantFiled: November 9, 2007Date of Patent: June 28, 2011Assignees: Nanosys, Inc., Sharp Kabushiki KaishaInventors: Samuel Martin, Xiangfeng Duan, Katsumasa Fujii, James M. Hamilton, Hiroshi Iwata, Francisco Leon, Jeffrey Miller, Tetsu Negishi, Hiroshi Ohki, J. Wallace Parce, Cheri X. Y. Pereira, Paul John Schuele, Akihide Shibata, David P. Stumbo, Yasunobu Okada
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Patent number: 7968273Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided.Type: GrantFiled: July 27, 2007Date of Patent: June 28, 2011Assignee: Nanosys, Inc.Inventors: Jian Chen, Xiangfeng Duan, Chao Liu, Madhuri L. Nallabolu, J. Wallace Parce, Srikanth Ranganathan
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Publication number: 20110150695Abstract: Methods for producing electronic grade metal nanostructures having low levels of contaminants are provided. Monolayer arrays, populations, and devices including such electronic grade nanostructures are described. In addition, novel methods and compositions for production of Group 10 metal nanostructures and for production of ruthenium nanostructures are provided, along with methods for recovering nanostructures from suspension.Type: ApplicationFiled: August 18, 2006Publication date: June 23, 2011Applicant: NANOSYS, Inc.Inventors: Srikanth Ranganathan, Paul Bernatis, Joel Gamoras, Chao Liu, J. Wallace Parce
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Patent number: 7951422Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.Type: GrantFiled: December 20, 2006Date of Patent: May 31, 2011Assignee: Nanosys, Inc.Inventors: Yaoling Pan, Xiangfeng Duan, Robert S. Dubrow, Jay Goldman, Shahriar Mostarshed, Chunming Niu, Linda T. Romano, David P. Stumbo, Alice Fischer-Colbrie, Vijendra Sahi, Virginia Robbins
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Patent number: 7943064Abstract: The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.Type: GrantFiled: September 9, 2008Date of Patent: May 17, 2011Assignee: Nanosys, Inc.Inventors: Jeffery A. Whiteford, Mihai A. Buretea, Erik C. Scher
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Patent number: 7939218Abstract: The present invention is directed to nanowire structures and interconnected nanowire networks comprising such structures, as well as methods for their production. The nanowire structures comprise a nanowire core, a carbon-based layer, and in additional embodiments, carbon-based structures such as nanographitic plates consisting of graphenes formed on the nanowire cores, interconnecting the nanowire structures in the networks. The networks are porous structures that can be formed into membranes or particles. The nanowire structures and the networks formed using them are useful in catalyst and electrode applications, including fuel cells, as well as field emission devices, support substrates and chromatographic applications.Type: GrantFiled: November 20, 2006Date of Patent: May 10, 2011Assignee: Nanosys, Inc.Inventor: Chunming Niu
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Patent number: 7932511Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.Type: GrantFiled: March 1, 2007Date of Patent: April 26, 2011Assignee: Nanosys, Inc.Inventors: Xiangfeng Duan, Chunming Niu, Stephen Empedocles, Linda T. Romano, Jian Chen, Vijendra Sahi, Lawrence Bock, David Stumbo, J. Wallace Parce, Jay L. Goldman
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Patent number: 7917298Abstract: The compositions, methods and systems of the invention provide nanocrystal taggants for unobtrusive monitoring of objects. Objects can be tagged with nanocrystal taggant compositions for detection of informative invisible emissions on illumination with appropriate excitation wavelengths.Type: GrantFiled: April 16, 2004Date of Patent: March 29, 2011Assignee: Nanosys, Inc.Inventors: Erik C. Scher, Stephen A. Empedocles
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Patent number: 7912653Abstract: The compositions, methods and systems of the invention provide nanocrystal taggants for unobtrusive monitoring of objects. Objects can be tagged with nanocrystal taggant compositions for detection of informative invisible emissions on illumination with appropriate excitation wavelengths. Authentication schemes are also provided that takes advantage of the unique emission and absorption characteristics of nanocrystals to create a unique spectral code that is far more difficult to decode and replicate than those previously employed.Type: GrantFiled: March 8, 2005Date of Patent: March 22, 2011Assignee: Nanosys, Inc.Inventors: Erik C. Scher, Stephen A. Empedocles
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Patent number: 7910064Abstract: This invention provides nanowire based molecular sensors and methods for detecting analytes in a microfluidic system. Methods for sensing analytes include detecting changed electrical parameters associated with contact of a nanowire with the analyte in a microfluidic system. Sensors of the invention include nanowires mounted in microchambers of a microfluidic system in electrical contact with the detector, whereby electrical parameter changes induced in the nanowire by the analyte can be monitored by the detector.Type: GrantFiled: April 6, 2006Date of Patent: March 22, 2011Assignee: Nanosys, Inc.Inventors: James M. Hamilton, Robert S. Dubrow, Calvin Y. H. Chow
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Publication number: 20110064785Abstract: Methods, systems, and apparatuses for nanomaterial-enhanced platelet binding and hemostatic medical devices are provided. Hemostatic materials and structures are provided that induce platelet binding, including platelet binding and the coagulation of blood at a wound/opening caused by trauma, a surgical procedure, ulceration, or other cause. Example embodiments include platelet binding devices, hemostatic bandages, hemostatic plugs, and hemostatic formulations. The hemostatic materials and structures may incorporate nanostructures and/or further hemostatic elements such as polymers, silicon nanofibers, silicon dioxide nanofibers, and/or glass beads into a highly absorbent, gelling scaffold. The hemostatic materials and structures may be resorbable.Type: ApplicationFiled: March 9, 2010Publication date: March 17, 2011Applicant: Nanosys, Inc.Inventors: R. Hugh Daniels, Esther Li, Erica J. Rogers
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Publication number: 20110045660Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.Type: ApplicationFiled: November 5, 2010Publication date: February 24, 2011Applicant: NANOSYS, INC.Inventors: Linda T. Romano, Jian Chen
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Patent number: 7892610Abstract: Methods and systems for applying nanowires and electrical devices to surfaces are described. In a first aspect, at least one nanowire is provided proximate to an electrode pair. An electric field is generated by electrodes of the electrode pair to associate the at least one nanowire with the electrodes. The electrode pair is aligned with a region of the destination surface. The at least one nanowire is deposited from the electrode pair to the region. In another aspect, a plurality of electrical devices is provided proximate to an electrode pair. An electric field is generated by electrodes of the electrode pair to associate an electrical device of the plurality of electrical devices with the electrodes. The electrode pair is aligned with a region of the destination surface. The electrical device is deposited from the electrode pair to the region.Type: GrantFiled: May 2, 2008Date of Patent: February 22, 2011Assignee: Nanosys, Inc.Inventors: J. Wallace Parce, James M. Hamilton, Samuel Martin, Erik Freer
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Publication number: 20110039690Abstract: Porous and/or curved nanofiber bearing substrate materials are provided having enhanced surface area for a variety of applications including as electrical substrates, semipermeable membranes and barriers, structural lattices for tissue culturing and for composite materials, production of long unbranched nanofibers, and the like. A method of producing nanofibers is disclosed including providing a plurality of microparticles or nanoparticles such as carbon black particles having a catalyst material deposited thereon, and synthesizing a plurality of nanofibers from the catalyst material on the microparticles or nanoparticles. Compositions including carbon black particles having nanowires deposited thereon are further disclosed.Type: ApplicationFiled: August 29, 2006Publication date: February 17, 2011Applicant: Nanosys, Inc.Inventor: Chunming Niu