Patents Assigned to Nanotechnologies, Inc.
  • Patent number: 7614287
    Abstract: A displacement detection mechanism for a scanning probe microscope capable of performing measurement quickly with high precision even if an objective lens or an illumination system is arranged above or below a sample or a cantilever, and a scanning probe microscope comprising it.
    Type: Grant
    Filed: August 21, 2007
    Date of Patent: November 10, 2009
    Assignee: SII NanoTechnology Inc.
    Inventors: Masato Iyoki, Hiroyoshi Yamamoto
  • Patent number: 7605368
    Abstract: A vibration-type cantilever holder holds a cantilever opposed to a sample. The holder supports a main body part of the cantilever at only its base end so that a probe at the free end of the cantilever can contact the sample. The holder has a cantilever-attaching stand on which the main body part is placed and fastened such that the cantilever is tilted at a predetermined angle with respect to the sample. A first vibration source is fastened to the cantilever-attaching stand and vibrates with a phase and an amplitude depending on a predetermined waveform signal, and the first vibration source is fastened at a first location to a holder main body. A second vibration source is fastened at a second location, which is spaced from the first location, to the holder main body and generates vibrations to offset vibrations traveling from the first vibration source to the cantilever-attaching stand and holder main body.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: October 20, 2009
    Assignee: SII NanoTechnology Inc.
    Inventors: Masatsugu Shigeno, Masato Iyoki
  • Patent number: 7589323
    Abstract: To provide a superconducting X-ray detector capable of carrying out a measurement by a high energy resolution by restraining a reduction in a sensitivity by a self magnetic field.
    Type: Grant
    Filed: January 24, 2006
    Date of Patent: September 15, 2009
    Assignee: SII NanoTechnology Inc.
    Inventors: Keiichi Tanaka, Akikazu Odawara, Satoshi Nakayama
  • Patent number: 7588366
    Abstract: There is provided a differential scanning calorimeter in which a base line stability and a responsiveness are improved. There is made a constitution in which the stability is ensured by making a neck-like part in a heat passage from a heat reservoir 1 to a sensor plate 4 and, at the same time, a two-dimension heat flow passage to a sample holder 5a is ensured.
    Type: Grant
    Filed: February 14, 2008
    Date of Patent: September 15, 2009
    Assignee: SII NanoTechnology Inc.
    Inventor: Ryoichi Kinoshita
  • Patent number: 7588605
    Abstract: To be able to measure a value with regard to a dissipation, or a value in proportion to a dissipation energy without making a premise by being brought into a steady state. Exciting means 12 for carrying out an excitation by following a resonance frequency of a cantilever 2, a displacement detector 10 for detecting a displacement of a stylus at a tip of the cantilever 2, an amplitude detector 20 for successively providing an amplitude from a signal from the displacement detector 10, a difference value detector 21 for providing a time difference value of the amplitude, a divider 22 for providing a value of a quotient between the time difference values, a logarithmic converter 23 for providing a logarithmic value of the value of the quotient, and a second divider 24 for providing a value with regard to a dissipation by calculating a value constituted by dividing the logarithmic value by a difference time period are provided.
    Type: Grant
    Filed: August 7, 2007
    Date of Patent: September 15, 2009
    Assignee: SII NanoTechnology Inc.
    Inventor: Norio Ookubo
  • Patent number: 7587025
    Abstract: In an X-ray analysis apparatus and an X-ray analysis method, a quantitative analysis is stably performed by stably behaving an X-ray source. There are possessed an X-ray tubular bulb irradiating a primary X-ray to a sample, a primary X-ray adjustment mechanism capable of adjusting an intensity of the primary X-ray, an X-ray detector detecting a characteristic X-ray radiated from the sample, thereby outputting a signal including energy informations of the characteristic X-ray and a scattered X-ray, an analyzer analyzing the above signal, and an incident X-ray adjustment mechanism disposed between the sample and the X-ray detector, and capable of adjusting a total intensity of the characteristic X-ray and the scattered x-ray, which are entered to the X-ray detector.
    Type: Grant
    Filed: January 10, 2008
    Date of Patent: September 8, 2009
    Assignee: SII NanoTechnology Inc.
    Inventors: Takayuki Fukai, Yoshiki Matoba, Kiyoshi Hasegawa
  • Patent number: 7573047
    Abstract: A wafer holder includes: a frame-shaped holder main body which has an opening at its center and carries a wafer on its upper surface; guide members which contact the outer periphery of the wafer placed on the holder main body and position the wafer on the holder main body; and cross section sample holding members which are disposed on an outer circumference of the holder main body and holds a cross section sample produced from the wafer. Each of the cross section sample holding members includes plate-shaped sample stands to which the cross section sample is fixed, and fixing stands each of which is detachably attached to the holder main body and pinches the sample stand such that the sample stand is attachable to and detachable from the fixing stand.
    Type: Grant
    Filed: February 28, 2007
    Date of Patent: August 11, 2009
    Assignee: SII NanoTechnology Inc.
    Inventor: Hiroyuki Suzuki
  • Patent number: 7571639
    Abstract: An opaque defect is processed by scanning with a high load or height fixed mode using a probe harder than a pattern material of a photomask at the time of going scanning, and is observed by scanning with a low load or intermittent contact mode at the time of returning scanning so as to detect an ending point of the opaque defect by the height information. When there is a portion reaching to a glass substrate as an ending point, this portion is not scanned by the high load or height fixed mode in the next processing, and only a portion not reaching to the ending point is scanned by the high load or height fixed mode.
    Type: Grant
    Filed: April 27, 2007
    Date of Patent: August 11, 2009
    Assignee: SII NanoTechnology Inc.
    Inventors: Toshio Doi, Kazutoshi Watanabe, Osamu Takaoka, Atsushi Uemoto
  • Publication number: 20090191247
    Abstract: This invention generally relates to use of novel nanomaterials comprised of metals in anti-viral applications. Such nanomaterials, for example, can be produced using a high power, pulsed plasma process, which plasma process, optionally, can be performed on the metal with a precursor (i.e., a gaseous precursor, such as acetylene or methane) when forming the unagglomerated nanomaterials. In embodiments of the invention, the metal is nanosilver. Optionally, the nanomaterials may also comprise carbon, including in the form of carbyne.
    Type: Application
    Filed: December 5, 2005
    Publication date: July 30, 2009
    Applicant: Nanotechnologies, INC
    Inventors: Miguel Jose-Yacaman, Kurt A Schroder, Karl M. Martin, Darrin L. Willauer
  • Publication number: 20090178741
    Abstract: Novel reactive composite materials and associated methods for making the same which are pertinent to numerous new or improved applications. The method for making the reactive composite materials utilizes mechanical deformation to manufacture such materials with controlled, predictable characteristics. In the first deformation step, an assembly of reactive layers and/or particles is plastically deformed to reduce its cross sectional area by one-half or more. Portions of the deformed sheets are stacked or bent into a new assembly, and the new assembly is then deformed. The steps of assembly and deformation are repeated a sufficient number of times that the resulting materials are only locally layered but have relatively uniform reaction velocity and heat generating characteristics predictable by stochastic models derived herein.
    Type: Application
    Filed: January 12, 2009
    Publication date: July 16, 2009
    Applicant: Reactive Nanotechnologies, Inc.
    Inventors: Yuwei Xun, David Lunking, Etienne Besnoin, David Van Heerden, Timothy P. Weihs, Omar M. Knio
  • Patent number: 7550723
    Abstract: A preliminary processing technology for a sample locally cuts out a sample part of a device to be analyzed and processes it into a needle-like projection, and a technology of realizing SAP analysis on an atomic level by ensuring stabilized ion evaporation sequentially even in the case of a sample of multilayer structure including an element layer of small evaporation electric field. The preliminary processing method for a sample used on atom probe apparatus comprises a step for cutting the desired observing part of the sample into a block using an FIB equipment, a step for transferring the sample block onto a sample substrate and fixing the sample block in place, and a step for processing the sample block fixed onto the sample substrate into a needle-point shape by FIB etching. The sample processed into a needle-point shape is shaped such that the layer direction of the multilayer structure becomes parallel to the longitudinal direction of the needle.
    Type: Grant
    Filed: March 2, 2005
    Date of Patent: June 23, 2009
    Assignee: SII NanoTechnology Inc.
    Inventor: Takashi Kaito
  • Patent number: 7534490
    Abstract: In various aspects provided are methods for producing a nanoparticle within a cross-linked, collapsed polymeric material. In various embodiments, the methods comprise (a) providing a polymeric solution comprising a polymeric material; (b) collapsing at least a portion of the polymeric material about one or more precursor moieties; (c) cross-linking the polymeric material; (d) modifying at least a portion of said precursor moieties to form one or more nanoparticles and thereby forming a composite nanoparticle.
    Type: Grant
    Filed: September 23, 2008
    Date of Patent: May 19, 2009
    Assignee: Northern Nanotechnologies, Inc.
    Inventors: Cynthia M. Goh, Jose Amado Dinglasan, Jane B. Goh, Richard Loo, Emina Veletanlic
  • Patent number: 7531796
    Abstract: Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.
    Type: Grant
    Filed: August 17, 2007
    Date of Patent: May 12, 2009
    Assignee: SII NanoTechnology Inc.
    Inventors: Junichi Tashiro, Yutaka Ikku, Toshiaki Fujii
  • Patent number: 7518125
    Abstract: A processing apparatus uses a focused charged particle beam to process a micro sample that is supported on a micro mount part. The micro mount part is supported on a micro sample stage and locally cooled by a cooling unit. The micro mount part is thermally independent of the micro sample stage and, due to its small size, can be cooled rapidly by the cooling unit.
    Type: Grant
    Filed: August 9, 2006
    Date of Patent: April 14, 2009
    Assignee: SII NanoTechnology Inc.
    Inventors: Yo Yamamoto, Haruo Takahashi, Toshiaki Fujii
  • Patent number: 7518109
    Abstract: In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied. An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.
    Type: Grant
    Filed: July 2, 2007
    Date of Patent: April 14, 2009
    Assignee: SII NanoTechnology Inc.
    Inventors: Yutaka Ikku, Tatsuya Asahata, Hidekazu Suzuki
  • Patent number: 7511269
    Abstract: A method of approaching a probe to a target position on a sample mounted on a sample stage tilted at a preselected tilt angle about a tilt axis of the sample stage. A distance between the tip of the probe and the target position of the sample is observed with a charged particle beam microscope while approaching the tip of the probe to the target position on the sample. The probe is moved in a direction so that on a display of the charged particle beam microscope, the tip of the probe and the tip of a shadow of the probe on the sample coincide at the target position on the sample.
    Type: Grant
    Filed: August 22, 2005
    Date of Patent: March 31, 2009
    Assignee: SII NanoTechnology Inc.
    Inventor: Masanao Munekane
  • Patent number: 7511289
    Abstract: A working method of performing beam assist deposition or beam assist etching of a sample comprises irradiating a focused charged particle beam onto a region of the sample, and blowing a predetermined gas through a gas blowing nozzle toward the sample region while the focused charged particle beam passes through a passage in a side portion of the gas blowing nozzle and irradiates the sample region. The passage may be a slot provided in the side portion of the gas blowing nozzle such that the focused charged particle beam passes through an inside of the slot. The slot terminates at one end near a tip of the gas blowing nozzle, and the one end of the slot terminates at and opens into the interior of the gas blowing nozzle.
    Type: Grant
    Filed: May 3, 2007
    Date of Patent: March 31, 2009
    Assignee: SII Nanotechnology Inc.
    Inventor: Takashi Kaito
  • Patent number: 7508907
    Abstract: When an X-ray focused by using an X-ray lens is irradiated to a sample, there is generated an X-ray halo component at the peripheral part of the focal point of the focused X-ray in the sample and, by this, precision of an analysis of a microscopic region becomes an issue. In order to control the shape of the X-rays from the X-ray lens, a collimator is installed between the X-ray lens and the sample, with an opening part having a tapering shape in which the opening at the side toward the sample is made smaller than that at the side toward the X-ray lens.
    Type: Grant
    Filed: August 27, 2007
    Date of Patent: March 24, 2009
    Assignee: SII NanoTechnology Inc.
    Inventor: Norio Sasayama
  • Patent number: 7507957
    Abstract: A problem to be resolved by the invention resides in providing a multifunction analyzing apparatus for detecting a shape with high resolution and physical property information capable of not only successively reading a base arrangement from end to end but also specifying a position hybridized by known RNA with regard to a single piece of DNA elongated in one direction on a board. A microscope system of the invention is provided with a fluorescence microscope, a scanning near field microscope and a scanning probe microscope as a detecting system, the microscopes are fixed to a switching mechanism and can be moved to a position at which the various microscopes can observe the same portion of a sample by switching operation of the mechanism. The microscope system of the invention is provided with a function capable of directly detecting a shape and physical property information of one piece of DNA by the scanning probe microscope by multifunction scanning.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: March 24, 2009
    Assignee: SII NanoTechnology Inc.
    Inventors: Masamichi Fujihira, Masatoshi Yasutake, Tatsuaki Ataka
  • Patent number: 7500779
    Abstract: A thermal analysis apparatus possesses has a cylindrical furnace tube axially inserted in a cylindrical heating furnace, and a pair of sample holders extending axially inside the furnace tube. The furnace tube is supported by two axially spaced groups of butting members, each group having three or more butting members that are disposed in circumferentially spaced-apart relationship on the outside of the furnace tube and that butt against the furnace tube to restrain positional deviation thereof in a radial direction while permitting expansion and contraction thereof in the axial direction during heating of the furnace tube by the heating furnace.
    Type: Grant
    Filed: February 13, 2007
    Date of Patent: March 10, 2009
    Assignee: SII NanoTechnology Inc.
    Inventors: Toshitada Takeuchi, Masakatsu Hasuda