Abstract: A sample to be processed is disposed within a processing cell which contains a liquid. Scratch processing using a scanning probe microscope is performed within the liquid so that chips or shavings removed from the sample scatter within the liquid rather than collecting on the surface of the sample. The processing cell has a supply port and a discharge port so that new liquid can be supplied within the cell through the supply port after the termination of the scratch processing to clean the cell. In this manner, chips or shavings generated by scratch processing a defect portion of the sample can be removed completely without being collected at the surface of a sample despite the surface tension of adsorbed water existing on the sample surface and/or electrostatic charges caused by friction.
Abstract: Poly(ester-acrylate) and poly(ester/epoxide) dendrimers. These materials can be synthesized by utilizing the so-called “sterically induced stoichiometric” principles. The preparation of the dendrimers is carried out by reacting precursor amino/polyamino-functional core materials with various branch cell reagents. The branch cell reagents are dimensionally large, relative to the amino/polyamino-initiator core and when reacted, produce generation=1 dendrimers directly in one step. There is also a method by which the dendrimers can be stabilized and that method is the reaction of the dendrimers with surface reactive molecules to pacify the reactive groups on the dendrimers.
Type:
Application
Filed:
April 20, 2005
Publication date:
October 18, 2007
Applicant:
Dendritic Nanotechnologies, Inc.
Inventors:
Donald Tomalia, Douglas Swanson, Baohua Huang, Veera Pulgam
Abstract: A manufacturing method for a light propagating probe comprises a step of sharpening a light-propagating body having a sharpened section formed on an optical fiber, a step of forming the light-propagating body into a hook shape close to the sharpened section, a metal film coating step for forming a transparent opening section in a tip section, a step of protecting the transparent opening section with a resist material, a step of forming a reflecting surface for a light lever method, a step for metal film coating a spring operating part to the rear from the hook-shaped section, and a step of removing the resist material protecting the transparent opening section.
Abstract: An indentation is formed by thrusting a probe of a scanning probe microscope for processing, which has a vertical surface or a vertical ridge and is harder than sample material, into sample for measuring the indentation. A high-fidelity AFM observation is performed on the shape of the formed indentation with a thin probe with high aspect ratio, the direction of the vertical surface or the vertical ridge is inspected, and the angle error ? is stored. By rotating a sample stage by an angle corresponding to the measured mounting angle error ? of the probe, the mounting angle error of the probe is corrected in advance.
Abstract: A differential scanning calorimeter has a heat sink for accommodating therein a measurement sample and a reference material, and a differential heat flow detector that detects a temperature difference between the sample and the reference material. A cooling mechanism cools the heat sink, and a thermoconductor is disposed between the cooling mechanism and the heat sink and forms a heat flow path between the two. A first heater heats the heat sink, and a second heater heats the thermoconductor to thereby heat the heat sink. The second heater begins operating before the first heater nears its rated maximum output power.
Abstract: There is provided a liquid metal ion beam irradiation device for irradiating a specific portion of a sample 6 with a prescribed liquid metal ion beam so as to form a cross section, and a gaseous ion beam irradiation device 7 for scanning a prescribed region (observation region) of the cross section using a gaseous ion beam focused to a prescribed diameter and removing a damaged layer on the prescribed region.
Abstract: A method of fabricating a three-dimensional microstructure provides data corresponding to information relating to the structure of a three-dimensional microstructure design. A sample is processed in accordance with the provided data by irradiating the sample with a charged-particle beam while controlling processing conditions of the charged-particle beam. Dimensions of the processed sample are compared with the provided data to identify differences between the structure of the processed sample and the structure of the three-dimensional microstructure design. The sample is then irradiated again with a charged-particle beam to correct the identified structural differences while adjusting the processing conditions of the charged-particle beam to thereby fabricate a three-dimensional microstructure having a structure substantially the same as the structure of the three-dimensional microstructure design.
Abstract: A processing method uses a probe of a scanning probe microscope. A fine marker is formed in a processing material by thrusting the probe, which is made of a material harder than the processing material, into a portion of the processing material disposed in the vicinity of an area of the processing material to be processed by the probe during a processing operation. A position of the fine marker on the processing material is detected during the processing operation. A drift amount of the area of the processing material is calculated in accordance with the detected position of the fine marker. A position of the area of the processing material is corrected in accordance with the calculated drift amount.
Abstract: An apparatus of evaluating a layer matching deviation based on CAD information of the invention, is provided with means for storing CAD data and a function of displaying to overlap a scanning microscope image of a pattern of a semiconductor device formed on a wafer and a design CAD image read from the storing means and a function of evaluating acceptability of formation of the pattern by displaying to overlap a pattern image of the semiconductor device formed on the wafer and the design CAD image of the pattern, in addition thereto, a function capable of evaluating acceptability of formation of the pattern also with regard to a shape and positional relationship with a pattern formed at a later step by displaying to overlap a design CAD image of the pattern formed at the later step.
Abstract: A scanning probe microscope is capable of radiating light on a sample without moving the sample from the scanning probe microscope and is capable of measuring the sample while controlling the conditions under which the sample is placed without changing the location of the sample. The scanning probe microscope includes a cantilever having a probe at a distal end thereof, a sample moving device for moving the sample, and a detection unit for detecting deflection of the cantilever using a laser beam. The detection unit is detachably mounted to the scanning probe microscope during measurement of the sample and is detachable from the microscope to enable radiation of the sample with light without changing the location of the sample.
Abstract: A method for growing single-wall carbon nanotubes involves preparing a catalyst comprising catalytic metals, iron and molybdenum, and magnesium oxide support material and contacting the catalyst with a gaseous carbon-containing feedstock at a sufficient temperature and for a sufficient contact time to make single-wall carbon nanotubes. The weight ratio of iron and molybdenum can range from about 2 to 1 to about 10 to 1 and the metals loading up to about 10 wt % of the MgO. The catalyst can be sulfided. Methane is a suitable carbon-containing feedstock. The process can be conducted in batch, continuous or semi-continuous modes, in reactors, such as a transport reactor, fluidized bed reactor, moving bed reactors and combinations thereof. The process also includes making single-wall carbon nanotubes with catalysts comprising at least one Group VIB or Group VIIIB metal on supports such as magnesia, zirconia, silica, and alumina, where the catalyst is sulfided.
Type:
Grant
Filed:
July 30, 2003
Date of Patent:
July 31, 2007
Assignee:
Carbon NanoTechnologies, Inc.
Inventors:
Yuemei Yang, Martin P. Grosboll, Kenneth A. Smith
Abstract: In a manufacture of a probe for a scattering type near-field microscope, there is provided a method of coating, with a high reproducibility, uniform metal particles efficiently inducing a surface enhanced Raman scattering. It has been adapted such that, in the probe for the scattering type near-field microscope, one part or all of the probe due to an interaction of at least an evanescent field is coated by metal particles which don't mutually adhere and have a particle diameter of 10 nm or larger and 50 nm or smaller in radius of curvature.
Abstract: A superconducting X-ray detection apparatus has a refrigerator, a cooling head cooled by the refrigerator, and a stacked structure connected to an end portion of the cooling head. The stacked structure comprises a sensor holder, a low-temperature first-stage amplifier connected to the sensor holder, and a superconducting X-ray detector mounted on the low-temperature first-stage amplifier.
Abstract: A thermal analyzer has a heat sink for storing therein a specimen, a heater for heating the heat sink and the specimen, at superheating temperatures, and a cooling mechanism thermally connected to the heat sink for cooling the heat sink and the specimen. The cooling mechanism is comprised of a tubular member having an inlet port for introducing a cooling gas into the tubular member and an outlet port for discharging the cooling gas from the tubular member. A tubular extension is thermaly connected to and extends from the tubular member. An electric cooling device has a cooling head connected to the tubular extension for cooling the cooling mechanism.
Abstract: There are provided a gas blowing nozzle adapted such that, by the fact that a groove-like notch structure has been provided in a side to which a beam IB comes flying in a nozzle tip part of a gas gun used on the occasion of a beam assist deposition or a beam assist etching, the beam IB can pass through an inside of the notch structure, and a charged particle beam apparatus having the gas blowing nozzle 11 as well as a working method.
Abstract: The kind of a particle is determined by pressing a hard atomic force microscope stylus having a spring constant equal to or larger than 300 N/m onto a particle to be removed and detecting bending quantity relative to a press force and a kind of a stylus used for removing the particle is changed in accordance with the kind of the particle.
Abstract: An electrical property evaluation apparatus for measuring an electrical property of an object includes a magnetic field generating mechanism that generates a magnetic field in a target area on the object, and a magnetic sensor for measuring the magnetic field near the target area. A cantilever having a conducting probe is supported so that the probe can be brought into contact with the target area. A bending measurement mechanism measures an amount of bending of the cantilever when the probe is brought into contact with the object. A control section controls a moving mechanism to maintain the bending amount of the cantilever constant. A voltage source applies a voltage to the probe, and an electrical property measuring section measures a current or an electrical resistance between the probe and the object in contact with each other.
Abstract: In an image noise prevention method in a composite system of a scanning electron microscope (SEM) and a focused ion beam apparatus (FIB), noise generated during a blanking period of the FIB is prevented from entering an image generated by the SEM by adjustment of scanning cycles of the FIB and the SEM.
Abstract: The object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method. The device of the present invention has an electron beam lens barrel that can carry out processing, as well as an FIB lens barrel, provided inside the same sample chamber, which means that a mask repair method of the present invention, in correction processing to remove redundant sections such as a mask opaque defect, phase shift film bump defect or a glass substrate cut remnant defect, comprises a step of coarse correction by etching using a focused ion beam and a step of finishing processing using an electron beam, to remove surface damage due to gallium irradiation, and residual gallium.
Abstract: A scanning probe microscope having a cantilever holder is provided which gives a cantilever great amplitude by a small-sized vibrator configurable in a limited space and is stably operated even in environments of high viscous drag such as a liquid. A cantilever base part of a cantilever is fixed to a fixing part of a scanning probe microscopy cantilever holder. A vibrator is mounted on the fixing part. When it is defined that the front side is the side close to a probe and the rear side is the side close to a supporting part of the fixing part along in the longitudinal direction of the cantilever, the vibrator displaces the front and rear sides of the fixing part of the cantilever holder to each other in the opposite directions within the plane orthogonal to the sample surface to vibrate the cantilever in a liquid.