Abstract: A differential amplifier has first and second input terminals (T1, T2), an output terminal, a differential stage connected to the first and second input terminals, and an amplification stage having an input terminal thereof connected to an output terminal of the differential stage and an output terminal thereof connected to the output terminal. The differential stage includes a first differential pair with one of an input pair thereof connected to the first input terminal (T1) and the other connected to the output terminal, a second differential pair with one of an input pair thereof connected to the first input terminal (T1) and the other connected to the second input terminal (T2), a first current source for supplying current to the first differential pair, a second current source for supplying current to the second differential pair, and a load circuit connected to the output pairs of the first and second differential pairs.

Abstract: A heat sink 109 is configured by a plate component having a combined structure composed of a recess and a projection formed thereon, wherein the recess is formed by allowing a part of the plate component to be set back from the surface level of the residual region, and the projection is formed on one surface of the plate component with the progress of formation of the recess, so as to be built up above the level of the residual region of the one surface.

Abstract: A semiconductor device 1 includes a semiconductor chip 10 (first semiconductor chip), a semiconductor chip 20 (second semiconductor chip) and a seal ring 30. The semiconductor chip 20 is provided on a surface S1 of the semiconductor chip 10 so as to be spaced apart from the semiconductor chip 10 with a predetermined spacing therebetween. A seal ring 30 is interposed between the semiconductor chip 10 and the semiconductor chip 20. An internal region, which is an inner region of the seal ring 30, and an external region, which is an outer region of the seal ring 30, are provided between the semiconductor chip 10 and the semiconductor chip 20.

Abstract: A multiprocessor system includes a memory that stores a program; an address notification register; a first processor; and a second processor, in which the first processor stores address information indicating an address from which the program is executed in the address notification register, when the first processor notifies an interrupt request to the second processor and causes the second processor to execute the program, and the second processor obtains the interrupt request notified from the first processor and the address information stored in the address notification register, and starts to execute the program from the address indicated by the obtained address information.

Abstract: A main object of the invention is to provide a reflective mask for EUV lithography, which may detect an alignment mark by transmission. The invention achieves the object by providing a reflective mask comprising a substrate, a multilayer formed on one side of the substrate, an intermediate layer formed on the multilayer, an absorber formed in pattern on the substrate on which the multilayer and the intermediate layer are formed, and a conductive layer formed on the other side of the substrate, wherein the pattern of the absorber constitutes a circuit pattern and an alignment mark, and in an alignment region where the alignment mark is provided, the other side of the substrate is exposed.

Abstract: Two interconnect layers are electrically connected while reducing the number of manufacturing steps. A contact plug 9c which is formed into a beaded shape in a layer underlying two interconnects 11C and 11D and which also electrically connects the two interconnects 11C and 11D is included. The two interconnects 11C and 11D are separated to each other and are formed in a same layer. The contact plug 9c is simultaneously formed with a contact plug 9b to be connected to an interconnect 4b and a contact plug 9a to be connected to a source/drain region 6.

Abstract: An exemplary embodiment of the present invention is an autofocus method that includes moving a focus lens according to an image signal generated from an image of a subject formed by an imaging optical system with a focus lens, obtaining a focus contrast of each of multiple image signals generated in a case of moving a position of the focus lens; and determining a moving direction of the focus lens according to the multiple obtained focus contrasts in response to a focus instruction.

Abstract: A display device uses a plurality of pixel circuits each of which includes a light-emitting element; a light-emission control switching element; a current control circuit for supplying a driving current, which corresponds to gray-level display data, to the light-emitting element via the light-emission control switching element; and a voltage control circuit, which includes a first capacitance element for storing a voltage corresponding to the gray-level display data, and controls ON/OFF operation of the light-emission switching element in accordance with the voltage stored. If the gray-level display data is data for causing the light-emitting element to display less than a certain luminance, the current control circuit supplies the light-emitting element with a constant driving current corresponding to the gray-level display data for displaying the certain luminance, and the voltage control circuit controls the ON time of the light-emission control switching element in accordance with a voltage stored.

Abstract: A reference current or voltage generation circuit which forms a self feedback circuit with a plurality of transistors and generates a reference current or a reference voltage, the reference current or voltage generation circuit including a normally-on type transistor that has a gate connected to a first power supply and is connected between a node and a second power supply. Moreover, a voltage of the node is substantially equal to a voltage of the first power supply when the reference current or voltage generation circuit does not operate, and the voltage of the node fluctuates from the voltage of the first power supply toward a voltage of the second power supply by a predetermined value or more when the reference current or voltage generation circuit operates.

Abstract: A push-pull amplifier including first to third current paths. The first current path includes first transistor allowing first current to flow through the first current path according to input signal. The second current path includes second transistor allowing second current having opposite phase to the first current to flow through the second current path according to the first current; first resistor; and third transistor connected to one end of the first resistor and having control terminal connected to the other end of the first resistor. The third current path includes output terminal; fourth transistor allowing current having the same phase as the first current to flow through the third current path according to the input signal; and fifth transistor allowing current having the same phase as the second current to flow through the third current path according to voltage of first node between the first resistor and the third transistor.

Abstract: A semiconductor device including a plurality of memory cells arranged in a matrix pattern, a write amplifier which writes write data to the memory cell in synchronization with a clock, a sense amplifier which reads out the write data written in the memory cell in synchronization with the clock, a plurality of column select switches which connect the plurality of the memory cells with the sense amplifier and the write amplifier, a column address decoder which makes the column select switch corresponding to one column among the plurality of the memory cells a conductive state based on a column address, a row address decoder which activates the memory cell of one row based on a row address, and a test write circuit which writes data corresponding to a logical level of a test signal to the memory cell based on a test mode signal.

Abstract: Provided is a semiconductor device including: a first charge pump circuit that generates a first control signal based on electric charge of a first pumping capacitor accumulated through a first drive transistor; a second charge pump circuit that generates a second control signal based on electric charge of a second pumping capacitor accumulated through a second drive transistor; a third charge pump circuit that transfers electric charge between an output terminal and a reference voltage terminal through a third drive transistor; and a fourth charge pump circuit that transfers electric charge between the output terminal and the reference voltage terminal through a fourth drive transistor. Conductive states of the first and third drive transistors are controlled based on the second control signal, and conductive states of the second and fourth drive transistors are controlled based on the first control signal.

Abstract: A semiconductor device includes an electrode pad and an external connection terminal. The external connection terminal contains Sn equal to or more than 50 wt %, Sn and Pb equal to or more than 90 wt % in total, or Pb equal to or more than 85 wt %, and the surface thereof is coated with an Au layer. The thickness of the Au layer is preferably equal to or more than 10 nm and equal to or less than 1 ?m. The weight of the Au layer is preferably equal to or less than 0.6% of the weight of the external connection terminal.

Abstract: An input interface circuit according to the present invention includes an input first stage circuit that is connected to a signal terminal, where the signal terminal receives external data, and a phase adjustment circuit that adjusts an external input clock and a latch timing signal to be in phase, where the latch timing signal is output to latch circuits included in the input first stage circuit. The phase adjustment circuit adjusts delay time of the latch timing signal that passes through the clock tree circuit and is supplied to the latch circuit in response to a comparison result between the clock and an output from a replica delay circuit which is replicated from the clock.

Abstract: A heat sink 109 is configured by a plate component having a combined structure composed of a recess and a projection formed thereon, wherein the recess is formed by allowing a part of the plate component to be set back from the surface level of the residual region, and the projection is formed on one surface of the plate component with the progress of formation of the recess, so as to be built up above the level of the residual region of the one surface.

Abstract: A die unit that maintains uniform quality of a work despite continuous operation is provided. The die unit includes a lower die holder including a base hole, an upper die holder including a through hole, a pillar having an end portion inserted to the base hole and the other end portion slidably inserted through the through hole, so as to allow the upper die holder to slide toward and away from the lower die holder, an annular bushing attached to the through hole so as to slide along the pillar, and a die element and a punch attached to one of the lower die holder and the upper die holder respectively. A spacer is provided at least one of between an inner circumferential surface of the through hole and the bushing, and between an inner circumferential surface of the base hole and the pillar, and the spacer has lower thermal conductivity than the upper die holder or the lower die holder on which the spacer is provided.

Abstract: A light-receiving circuit includes a photodiode that converts an input optical signal to a current signal; a current-voltage converting circuit that outputs an output voltage signal obtained by adding a reference voltage to a voltage signal proportional to the current value of the current signal; and an input current limiting unit that supplies the current-voltage converting circuit with the current signal upon limiting the current value of this current signal based upon the reference voltage in such a manner that the output voltage signal will not exceed a constant value irrespective of the value of the reference voltage.

Abstract: A multiplier PLL multiplies a reference clock and outputs the multiplied clock. A DLL compares the clock output from the multiplier PLL with a clock obtained by delaying the clock output from the multiplier PLL. The DLL generates a delay signal having a given amount of delay based on the comparison result. A delay control signal operation circuit generates a delay control signal based on the delay signal generated by the DLL. A first delay circuit delays an input signal based on the delay control signal generated by the delay control signal operation circuit.

Abstract: A D-A converter includes a resistor string that generates a plurality of voltages including an upper limit voltage, a lower limit voltage, and an intermediate voltage, a first selector that selects and outputs a first voltage among the plurality of voltages according to a lower bit, the first voltage being selected from the intermediate voltage and a voltage lower than the intermediate voltage, a second selector that selects and outputs a second voltage according to a higher bit, the second voltage being one of a lower power supply voltage and the intermediate voltage or a voltage higher than the intermediate voltage, a third selector that selects and outputs a third voltage according to the higher bit, the third voltage being selected from the lower limit voltage and the lower power supply voltage; and an amplifier that adds the first voltage and the second voltage and subtracts the third voltage.

Abstract: A mesa photodiode which includes a mesa, the side wall of the mesa (a light-receiving region mesa) and at least a shoulder portion of the mesa in an upper face of the mesa are continuously covered with a semiconductor layer of a first conductivity type, a second conductivity type, a semi-insulating type, or an undoped type (an undoped InP layer, for example) that is grown on the side wall and the upper face of the mesa. In the semiconductor layer, a layer thickness D1 of a portion covering the side wall of the mesa is equal to or greater than 850 nm.