Abstract: A differential amplifier including: 1st transistor that is connected between 1st power-supply terminal and 1st output terminal, and has a control terminal receiving one of the differential input signals; 2nd transistor that is connected between 2nd power-supply terminal and 1st output terminal, and has a control terminal receiving the other of the differential input signals; 1st switch that is connected between 1st power-supply terminal and 1st transistor; 3rd transistor that is connected between 2nd power-supply terminal and 2nd output terminal, and has a control terminal is input to one of the differential input signals; 4th transistor that is connected between 1st power-supply terminal and 2nd output terminal, and has a control terminal receiving the other of the differential input signals; 2nd switch that is connected between 2nd power-supply terminal and 3rd transistor. Drive state of 1st and 2nd switches are controlled by a control signal.

Abstract: A semiconductor device includes a latch circuit which includes a first node for keeping a first potential corresponding to a data, and a second node for keeping a second potential corresponding to the same data, a diffusion layer continuously formed between the first node and the second node, and a transistor provided on the diffusion layer to isolate the first node from the second node.

Abstract: According to an exemplary aspect of the present invention, at least a semiconductor mesa and a semiconductor layer covering at least the side wall of the mesa and a semiconductor mesa are formed on an n-type semiconductor substrate. The semiconductor mesa includes at least a light absorption layer and a p-type contact layer. The principal surface of the semiconductor substrate tilts at an angle ? to the (100) plane. The angle ? is 0.1 degree?|?|?10 degrees.

Abstract: A stream processor includes a programmable main processor MP, and a coprocessor CP that executes an extension instruction, the extension instruction being different from a basic instruction executed by the main processor MP. The main processor MP includes a coprocessor controller CPC outputting the extension instruction to the coprocessor CP, and the coprocessor CP includes a task controller TC, the task controller controlling a task performed based on the extension instruction and outputting status information ST of the task on every clock. The coprocessor controller CPC controls the coprocessor CP based on the status information ST and a basic instruction executed by the main processor MP in background in advance.

Abstract: A nonvolatile semiconductor memory device includes a first columnar protrusion and a second columnar protrusion formed to be spaced out on a surface of a semiconductor substrate, and the first and the second columnar protrusions each include a split gate nonvolatile memory cell in which a first source/drain region and a second source/drain region are formed at a surrounding part and an extremity, and in which a first layered structure, in which a charge accumulating film and a memory gate line are layered, and a second layered structure, in which a gate oxide film and a control gate line are layered, are formed on a surface of a sidewall between the surrounding part and the extremity. The first layered structure is also formed between the first and second columnar protrusions, whereby the memory gate line of the first columnar protrusion and the second columnar protrusion is connected each other.

Abstract: A semiconductor apparatus includes a doped semiconductor layer formed on a semiconductor substrate of a first conductivity type and first and second gate trenches formed in the semiconductor layer, the second gate trench being separated from the first gate trench in a first direction. The doped semiconductor layer includes a low concentration base region of a second conductivity typed formed between the first and second gate trenches, a first source region of the first conductivity type, a second source region of the first conductivity type, a first high concentration base region of the second conductivity type, and a second high concentration base region of the second conductivity type formed so that the first and second high concentration base regions are separated by the low concentration base region, and the second high concentration base region is not below both of the first and second source regions.

Abstract: An etching apparatus includes a process chamber into which an etching gas is introduced, an electrode for generating plasma disposed in the process chamber, a stage disposed in the process chamber, on which a substrate is placed, and a shadow ring disposed in the process chamber and placed above the stage, so as to cover the circumferential portion and an inner region adjacent thereto of the substrate in a non-contact manner. The shadow ring has an irregular pattern on the inner circumferential edge thereof.

Abstract: A mesa photodiode which includes a mesa, the side wall of the mesa (a light-receiving region mesa) and at least a shoulder portion of the mesa in an upper face of the mesa are continuously covered with a semiconductor layer of a first conductivity type, a second conductivity type, a semi-insulating type, or an undoped type (an undoped InP layer, for example) that is grown on the side wall and the upper face of the mesa. In the semiconductor layer, a layer thickness D1 of a portion covering the side wall of the mesa is equal to or greater than 850 nm.

Abstract: A design method for a semiconductor integrated circuit, includes : a first calculating step; a second calculating step; and a setting step. The first step is a step of calculating a consumption current amount of a layout target circuit based on circuit information. The second calculating step is a step of calculating a suppliable current amount per unit area in a region where a power can be supplied from a power wiring line. The setting step is a step of setting a cell size of the layout target circuit based on the consumption current amount so that a consumption current amount per unit area of the layout target circuit is smaller than the suppliable current amount per unit area.

Abstract: A printed wiring board includes a plurality of lands arranged in a mounting area allowing therein mounting of an electronic component; and an wiring respectively connected to a specific land which is at least one of the outermost lands arranged outermostly out of all lands, wherein a connection portion of the specific land and the wiring connected to the specific land is positioned inside a closed curve which collectively surrounds, by the shortest path, all of the outermost lands formed in the mounting area.

Abstract: To suppress stress variation on a channel forming region, a semiconductor device includes an element isolating region on the semiconductor substrate principal surface, and an element forming region on the principal surface to be surrounded by the element isolating region. The principal surface has orthogonal first and second directions. A circumferential shape of the element forming region has a first side extending along the first direction. The element forming region has a first transistor region (TR1), a second transistor region (TR2) arranged between the first side and TR1, and a dummy region on the first direction side of TR1. TR1 has a first channel forming region facing the first side. TR2 has a second channel forming region facing the first side. The first channel forming region has a non-facing region that is not facing the second channel forming region. The dummy region faces the non-facing region in the second direction.

Abstract: A test apparatus according to the present invention includes a probe card recognition unit that recognizes positions of at least two probe card marks formed to a probe card and assumes a probe card mark connection line connecting the positions of the probe card marks, a backing material recognition unit that recognizes positions of at least two backing material marks formed to a backing material where a semiconductor chip is fixed thereto and assumes a backing material mark connection line connecting the positions of the backing material mark, a positional relationship recognition unit that recognizes a positional relationship between the probe card and the backing material according to the probe card mark connection line and the backing material mark connection line, and a correction unit that corrects the position of at least one of the probe card and the backing material according to the positional relationship.

Abstract: A semiconductor testing device of the prevent invention includes a current detecting circuit, an electric current drawing circuit, and a determining device. The electric current drawing circuit is connected to a semiconductor device under test, and draws a branched electric current branched from a measured electric current output from a second terminal based on predetermined electric voltage. The current detecting circuit is connected to the semiconductor device, and detects a detection current obtained by subtracting the branched electric current from the measured electric current. The determining device determines a quality of the semiconductor device based on the detection current.

Abstract: A signal line driving circuit according to an exemplary aspect of the present invention includes: a first amplifier; a second amplifier; a first charge share switch connected between an output terminal of the first amplifier and an output terminal of the second amplifier; a first output switch connected between an output node of the first amplifier and the output terminal of the first amplifier; a second charge share switch connected between a node between the first output switch and the output terminal of the first amplifier and an input terminal of the first amplifier; and a first input switch connected to the input terminal of the first amplifier.

Abstract: A plurality of projections, respectively given later as cores of a plurality of external connection terminals, are formed first by selectively forming a curable resin layer over a protective insulating film; flat portions are then formed respectively on the top surfaces of the plurality of projections, by pressing a molding jig having a flat opposing surface onto the top surfaces of the plurality of projections, before the projections are cured; the plurality of projections are cured; and the plurality of external connection terminals, and the plurality of interconnects are formed, by selectively forming an electro-conductive film over the plurality of projections, the protective insulating film, and the plurality of electrode pads.

Abstract: A semiconductor device includes a wiring board that has a conductive pattern formed on at least one principal surface, and an IC chip that is mounted on the wiring board. The IC chip includes a plurality of electrodes to make conductor connection with the wiring board. The conductive pattern includes a lead line pattern and a heat dissipation pattern. The lead line pattern is connected with at least one of the plurality of electrodes through a conductor. The heat dissipation pattern is physically spaced from the IC chip and the lead line pattern and has a larger surface area than the lead line pattern. Further, the lead line pattern and the heat dissipation pattern are placed opposite to each other with a gap therebetween, and their opposite parts respectively have interdigitated shapes and are arranged with the respective interdigitated shapes engaging with each other with the gap therebetween.

Abstract: This method includes an electrode pad forming process for forming an electrode pad on a substrate, a solder bump forming process for forming a solder bump on the electrode pad, at least part of the surface of the solder bump being covered with a flux, and an oxygen exposure process for supplying an oxygen gas having reactive properties, such as an ozone (O3) gas, to the solder bump.

Abstract: After opening a via hole, the bottom portion and the top portion are rounded by etching performed twice. As a result, resistance of the via hole can be reduced and its quality and life can be enhanced.

Abstract: A semiconductor device includes a cell array and a plurality of process failure detection circuits each having a layout pattern substantially identical to that of a cell of the cell array in a dummy region arranged around the cell array. Each of the process failure detection circuits includes a dummy pattern that equalizes a degree of density/sparsity of a peripheral part of the cell array with that of a central part of the cell array. The process failure detection circuits include a process failure detection circuit having a layout pattern formed with a stricter pattern margin in at least one manufacturing process, compared with the layout pattern of the cell of the cell array.

Abstract: A small size circuit reproducing data with low error rate even when a signal includes a non-linear distortion is desired. In such a circuit, the Viterbi method is performed. In the Viterbi method, branch metrics are calculated based on a difference of a sampled reproduction signal and a predetermined expectation values. Path metrics are calculated from the branch metrics. Paths among the plurality of paths having the calculated path metrics and merging at a same state are compared with one another. Based on the magnitude of the compared path metrics, survivor path is selected. In the circuit, for the path metrics of paths merging at a same state, offset corresponding to a determination result until a merging point is added to the paths for the comparison for determining the survivor path from the plurality of merging paths.