Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on its upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate; a base plate through-hole that penetrates the base plate in an up-down direction; an insulating tube inserted into the base plate through-hole; an adhesive layer including an insulating tube upper surface adhesion part and an insulating tube outer circumferential surface adhesion part; and a positioning structure configured to perform positioning so that a distance between the lower surface of the ceramic plate and the upper surface of the insulating tube reaches a predetermined distance.

Abstract: A porous body design method using a computer causes the computer to execute, a plurality of times, a characteristic prediction/calculation process of predicting or calculating characteristics of a porous body having a predetermined three-dimensional structure, an evaluation process of evaluating the characteristics of the porous body predicted or calculated by the characteristic prediction/calculation process, and an optimization process of changing connectivity between pores in the three-dimensional structure to search for an optimal connectivity, in which the three-dimensional structure of the porous body is determined on the basis of evaluation results of the characteristics of the porous body by the evaluation process.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on its upper surface and a built-in electrostatic electrode; a base plate provided on a lower surface of the ceramic plate; a passage provided from a lower surface of the base plate to the wafer placement surface of the ceramic plate; an internal electrode provided inside the ceramic plate so as to be located in a periphery of the passage under the electrostatic electrode; a switcher coupled to the internal electrode, and configured to switch between whether the internal electrode is electrically coupled to the electrostatic electrode; and a bias electrode provided at a height lower than or equal to a height of the internal electrode electrically independently from the electrostatic electrode, and configured to receive application of a bias voltage when plasma is generated over the wafer placement surface.

Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface on its upper surface and a built-in electrostatic electrode; a base plate provided on a lower surface of the ceramic plate, and configured to include a built-in refrigerant flow path; a passage provided from a lower surface of the base plate to the wafer placement surface of the ceramic plate; at least one inner electrode provided inside the ceramic plate so as to be located in a periphery of the passage under the electrostatic electrode and not to be exposed to an inner wall of the passage, the at least one inner electrode being electrically coupled to the electrostatic electrode; and a bias electrode provided electrically independently from the electrostatic electrode at a height equal to or lower than a height of a lowermost inner electrode of the at least one inner electrode.

Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface on its upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate; a base plate through-hole that penetrates the base plate in an up-down direction; an insulating tube inserted into the base plate through-hole; an adhesive agent pool provided in at least one of an inner circumferential surface of the base plate through-hole or an outer circumferential surface of the insulating tube, and disposed at a position down away from an upper surface of the insulating tube; and an adhesive layer including an insulating tube outer circumferential surface adhesion part formed from the lower surface of the ceramic plate to an intermediate point of the adhesive agent pool.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on an upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate, and configured to include a built-in refrigerant flow path; a base plate through-hole provided between adjacent parts of the refrigerant flow path, and configured to penetrate the base plate in an up-down direction; an insulating tube provided in the base plate through-hole, and fixed; and a ceramic plate hole open to the lower surface of the ceramic plate, and provided to communicate with an inside of the insulating tube, wherein a wall thickness of the insulating tube continuously varies in a circumferential direction of the insulating tube.

Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic plate; a composite plate joined to a lower surface of the ceramic plate; a cooling plate formed of a metal material, disposed on a lower surface of the composite plate; a first fastener that fastens the composite plate and the cooling plate; a support plate that is formed of an insulating material and supports a lower surface of the cooling plate; and a second fastener that fastens the cooling plate and the support plate, wherein, when the ceramic plate is heated from room temperature to high temperature, a first layered body including the ceramic plate and the composite plate deforms such that a central portion of the first layered body is convex, and a second layered body including the cooling plate and the support plate deforms such that a central portion of the second layered body is convex.

Abstract: A ceramic heater with a shaft includes: a ceramic plate in which resistance heating element is embedded; a hollow ceramic shaft bonded to the surface on an opposite side of a wafer placement surface of the ceramic plate; a conductive film provided in an axial direction to extend on the internal circumferential surface of the ceramic shaft; a recessed section provided to reach a terminal of the resistance heating element from the surface on the opposite side of the wafer placement surface of the ceramic plate, the recessed section having a bottom surface to which a lower surface of the terminal is exposed and a lateral surface to which a surface of the conductive film is exposed; and a connection member which is filled in the recessed section, and electrically connects the lower surface of the terminal and the surface of the conductive film.

Abstract: A multi-zone heater capable of heating a wafer mounted on a disc-shaped ceramic substrate includes: a plurality of lift pin holes which are provided in the substrate; an inner zone heater embedded in an inner zone of the ceramic substrate; an outer zone heater embedded in an outer zone outside the inner zone; first and second feed terminals to which opposite ends of the inner zone heater are connected; first and second leads to which opposite ends of the outer zone heater are connected; and third and fourth feed terminals to which the first and second leads are respectively connected, the plurality of lift pin holes, the inner zone heater, and the outer zone heater are arranged to be symmetric with respect to a common axis of symmetry, and the first and second leads are arranged along the axis of symmetry to be symmetric to each other.

Abstract: There is provided a copper alloy composed of Ni: 5 to 25% by weight, Sn: 5 to 10% by weight, at least one element M selected from the group consisting of Zr, Ti, Fe, and Si: 0.01 to 0.30% by weight in total, at least one element A selected from the group consisting of Mn, Zn, Mg, Ca, Al, and P: 0.01 to 1.00% by weight in total, the balance being Cu and inevitable impurities. Ni-based intermetallic compound grains containing a Ni-M intermetallic compound are formed in the copper alloy. The number of the Ni-based intermetallic compound grains present per unit area of 1 mm2 in the copper alloy is 1.0×103 to 1.0×106.

Abstract: A vehicle air conditioning system includes: an air conditioning duct for allowing air to flow therethrough; a first humidity control unit having at least one humidity control device including a moisture absorbing material-containing layer, wherein the first humidity control unit is disposed in the air conditioning duct; a second humidity control unit having at least one humidity control member containing a moisture absorbing material, the second humidity control unit being disposed in the air conditioning duct on a downstream side of the first humidity control unit; and a power source for applying a voltage to the humidity control device. The total amount of the moisture absorbing material in the second humidity control unit is 0.3 to 12 times the total amount of the moisture absorbing material in the first humidity control unit.

Abstract: There is provided a ceramic susceptor including a disk-shaped ceramic plate bonded body including an upper ceramic plate and a lower ceramic plate, an internal electrode embedded in the bonded body, and a purge gas groove, a vacuum suction groove, and a thermocouple insertion groove that are respectively provided on a bonding surface side of the upper ceramic plate or the lower ceramic plate. The ceramic plate bonded body has a central zone and an outer peripheral zone. The purge gas groove, the vacuum suction groove, and the thermocouple insertion groove respectively have straight-line portions in the central zone. An angle ?1 formed by a straight-line portion of the purge gas groove and a straight-line portion of the thermocouple insertion groove, and an angle ?2 formed by the straight-line portion of the purge gas groove and a straight-line portion of the vacuum suction groove satisfy 90°<?1<180°, 135°<?2<225°, and ?1<?2.

Abstract: A moisture absorbing device for humidifiers includes: a honeycomb structure having an outer peripheral wall and partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face to form a flow path; and a moisture absorbing material-containing layer provided on a surface of each of the partition walls. The honeycomb structure has a thickness of each of the partition walls of 0.089 to 0.140 mm and a cell density of 62.0 to 93.0 cells/cm2.

Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface on an upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate, and configured to include built-in refrigerant flow paths; a through-hole that penetrates the base plate in an up-down direction; an insulating tube inserted into the through-hole; and a resin-containing adhesive layer provided at least one of between an upper surface of the insulating tube and a lower surface of the ceramic plate or between an outer circumferential surface of the insulating tube and an inner circumferential surface of the through-hole, and configured to fix the insulating tube. A thermal conductivity of the insulating tube is less than or equal to 10 W/mK.

Abstract: The present invention relates to a transparent sealing member and an optical component. The present invention is a transparent sealing member (10A) used in an optical component (100A) provided with a package (16A) having at least one optical element (14) emitting ultraviolet light (12) and a mount board (18) to which the optical element is mounted. The transparent sealing member (10A) is provided with a transparent body (24) joined on the mount board (18) via an organic adhesion layer (20), and the transparent body (24) has a housing space (26) in a lower surface opening.

Abstract: There is provided a copper alloy bonded body composed of members made of an age-hardenable copper alloy, diffusion-bonded to one another. In the bonded body, a bonding interface between the members remains, and (i) the age-hardenable copper alloy is a beryllium copper alloy of which the beryllium content is 0.7% by weight or less, and an area ratio of inclusions composed of an oxide, a carbide, and/or an intermetallic compound in a HAADF-STEM image of a rectangular section of a size of 800 nm×400 nm including the bonding interface is 7.5% or less, or (ii) the age-hardenable copper alloy is a copper alloy free from beryllium, and an area ratio of inclusions composed of an oxide, a carbide, and/or an intermetallic compound in a HAADF-STEM image of a rectangular section of a size of 800 nm×400 nm including the bonding interface is 30% or less.

Abstract: There is provided a copper alloy bonded body composed of members made of an age-hardenable copper alloy, the members diffusion-bonded to one another, wherein a bonding interface between the members remains. In the bonded body, the content of beryllium in the age-hardenable copper alloy is 0.7% by weight or less, and, in a laser microscope image of a section including the bonding interface, a ratio of a total length of a line segment corresponding to a discontinuous region relative to an entire length of a bonding interface line defined along the bonding interface and a position where the bonding interface was present is 3.5% or more. The discontinuous region is defined as a region where, when a plurality of perpendicular lines is drawn with respect to the bonding interface line at a pitch of 5 ?m, three or more adjacent perpendicular lines do not intersect with the remaining bonding interface.

Abstract: A solid electrolyte contains A, M?, M?, M?, and Cl, wherein A is at least one element selected from the group consisting of Li and Na, M? is at least one element selected from the group consisting of Zr and Hf, M? is at least one element selected from the group consisting of Ta and Nb, M? is at least one element selected from the group consisting of Gd, Yb, Dy, Er, Ho, Eu, and Sc, and the amount of substance of Cl is greater than the amount of substance of A.

Abstract: A saggar may include: a ceramic part of ceramic with a box shape, the ceramic part including an outer bottom surface and an outer side wall; and a metal part having a box shape, the metal part including an inner bottom surface and an inner side wall, the metal part being removably disposed inside the ceramic part, wherein when the metal part is inside the ceramic part at a room temperature, a clearance is defined between the outer and inner side walls, the outer side wall includes at least a pair of recesses, in a plan view of the metal part, the pair of recesses is at positions facing each other across a center of the metal part, the metal part includes at least a pair of flanges, and when the metal part is inside the ceramic part, the pair of flanges is located within the pair of recesses.

Abstract: A sensor element includes a base part including a plurality of oxygen-ion-conductive solid electrolyte layers stacked; a measurement-object gas flow part for introduction and flow of a measurement-object gas through one end part in a longitudinal direction of the base part; a main pump cell including an inner main pump electrode disposed on an inner surface of the measurement-object gas flow part, and an outer pump electrode; a target-gas-decomposing pump cell including a target-gas-decomposing pump electrode disposed at a position farther from the one end part than the inner main pump electrode, and an outer pump electrode; a residual-oxygen-measuring pump cell including a residual-oxygen-measuring electrode disposed at a position farther from the one end part than the inner main pump electrode, and an outer pump electrode; and a reference electrode. The target-gas-decomposing pump electrode comprises a metal material that has catalytic activity of decomposing a target gas to be measured.