Abstract: A wafer placement table includes a ceramic plate having a wafer placement surface and an electrode, a cooling plate made of a metal-ceramic composite and having a cooling medium passage, and a joining layer configured to join the plates. A distance from the wafer placement surface to at least one of upper base or lower base of the cooling medium passage is not constant. The cooling plate has a plurality of plate portions including a first plate portion and a second plate portion, and has a structure in which the plurality of plate portions metal-joined to each other. The first plate portion has a first passage portion which is a through groove having the same shape as the cooling medium passage. The second plate portion has a second passage portion which is a bottomed groove disposed in at least part of a region facing the first passage portion.

Abstract: A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole.

Abstract: A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole; and a thermally conductive paste interposed, for example, between side surfaces of the projections and an inner peripheral surface of the projection insertion hole of the heat dissipation sheet.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate incorporating an electrode; a ceramic plate through hole extending through the ceramic plate in an up-and-down direction; a base plate having electrical conductivity and located adjacent to a lower surface of the ceramic plate; a base plate through hole extending through the base plate in the up-and-down direction; an insulating sleeve inserted into the base plate through hole and having an outer circumferential surface adhered to an inner circumferential surface of the base plate through hole with an adhesive layer therebetween; and a sleeve through hole extending through the insulating sleeve in the up-and-down direction and communicating with the ceramic plate through hole, wherein the insulating sleeve has at least one ring-shaped or spiral outer circumferential groove on the outer circumferential surface of the insulating sleeve except for an upper end portion of the insulating sleeve.

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface; resistance heating elements buried in the ceramic base; jumper layers having a planar shape and provided in a different layer from the resistance heating elements; an inner via connecting the jumper layer and an end of the resistance heating element; and a feed via connected to the jumper layer, wherein each of the resistance heating elements is provided for each of zones of a surface parallel to the wafer placement surface, each of the jumper layers is provided for each of the resistance heating elements, and a center-to-center distance between the inner via and the feed via in each of the jumper layers is greater than or equal to 50 mm.

Abstract: A member for a semiconductor manufacturing apparatus, includes: a ceramic plate that has a ceramic plate through hole; an electroconductive base plate that has a base plate through hole and that is disposed on a lower surface side of the ceramic plate; an insulating sleeve which is inserted into the base plate through hole and of which an outer peripheral surface is adhered to an inner peripheral surface of the base plate through hole via an adhesion layer; and a sleeve through hole that passes through the insulating sleeve in the up-down direction and that communicates with the ceramic plate through hole. The insulating sleeve has a tool engaging portion that is engageable with an external tool, and upon being engaged with the external tool, the tool engaging portion transmits rotation torque of the external tool to the insulating sleeve.

Abstract: A member for a semiconductor manufacturing apparatus, the member has a wafer placement surface and includes: a plurality of gas outflow passages each having an opening on the wafer placement surface; a common gas passage that is in communication with the plurality of gas outflow passages; and at least one gas inflow passage that is in communication with the common gas passage from a surface of the member for a semiconductor manufacturing apparatus that is on an opposite side from the wafer placement surface, the number of the at least one gas inflow passage being smaller than the number of the gas outflow passages in communication with the common gas passage. Among the plurality of gas outflow passages, a gas outflow passage closer to the gas inflow passage has a larger gas passage resistance than a gas outflow passage farther from the gas inflow passage.

Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface; a conductive base plate; a gas common passage provided inside the base plate; gas outlet passages provided to reach the wafer placement surface from the gas common passage; at least one gas inlet passage provided to communicate with the gas common passage from a lower surface of the base plate; and an insulating sleeve disposed in a base plate through-hole. The insulating sleeve has a first communication hole that constitutes part of the gas common passage, and a second communication hole that is provided to reach an upper surface of the insulating sleeve from the first communication hole, and constitute part of the gas outlet passages.

Abstract: A wafer placement table includes an upper substrate including a ceramic substrate and having a wafer placement surface, a lower substrate disposed on a lower surface of the upper substrate including a refrigerant flow path or a refrigerant flow-path groove, a through hole extending through the lower substrate in an up-down direction to intersect with the refrigerant flow path or the refrigerant flow-path groove, a screw hole provided in the lower surface of the upper substrate, at a position facing the through hole, a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole, and a refrigerant-leakage prevention member that prevents the refrigerant from leaking out to the lower surface of the lower substrate through the through hole into which the screw member is inserted.

Abstract: A cooling plate according to the present invention contains 42% to 65% by mass of TiSi2, 4% to 16% by mass of TiC, and a smaller amount of SiC than the mass percentage of TiSi2.

Abstract: A honeycomb filter comprising a pillar-shaped honeycomb structure body having a porous partition wall and a plugging portion, wherein a thickness of the partition wall is 0.257 mm or less, a porosity of the partition wall is 52 to 57%, an average pore diameter of the partition wall is 6 to 13 µm, a number per unit area of pores which exist at a surface of the partition wall and which have equivalent circle opening diameters exceeding 3 µm is 800 to 1500 /mm2, an average equivalent circle opening diameter of pores which exist at a surface of the partition wall and which have equivalent circle opening diameters exceeding 3 µm is 8.0 to 12.0 µm, and in a pore diameter distribution of the partition wall, D10 is 2.0 to 5.5 µm, D90 is 13.0 to 25.5 µm, and (Log(D90)-Log(D10))/Log(D50) is 0.84 or less.

Abstract: A honeycomb filter comprising a pillar-shaped honeycomb structure body having a porous partition wall and a plugging portion, wherein, in a pore diameter distribution of the partition wall, in the case where the pore diameter (µm) whose cumulative pore volume is 10% of the total pore volume is denoted by D10, the pore diameter (µm) whose cumulative pore volume is 50% of the total pore volume is denoted by D50, and the pore diameter (µm) whose cumulative pore volume is 90% of the total pore volume is denoted by D90, all of the following equations (1) to (6) are satisfied. 8 .4 ? ? m<D10 ­­­(1) 17 .5 ? ? m<D50<24 .0 ? ? m ­­­(2) D90<55 .2 ? ? m ­­­(3) logD90-logD10 / logD50 <0 .60 ­­­(4) logD90 / logD50 <1 .30 ­­­(5) logD50 / logD10 <1 .

Abstract: A honeycomb filter includes: a honeycomb substrate having porous partition walls disposed so as to surround cells extending from an inflow end face to an outflow end face, an outer peripheral coating layer disposed so as to surround an outer periphery of the honeycomb substrate, and plugging portions that are disposed at any one of ends on the inflow end face and ends on the outflow end face, of the cells, wherein, the outer peripheral coating layer has an inflection point at which thermal expansion in thermal expansion behavior of the outer peripheral coating layer turns to contraction and a temperature T1 of which is 1000 to 1500° C., and the outer peripheral coating layer has a porosity P1 of 36 to 48%, and a thermal expansion coefficient C1 between 40 to 800° C. of 2.5 to 3.5×10-6 /°C.

Abstract: A wafer placement table includes a ceramic substrate having a wafer placement surface on an upper surface thereof and containing an electrode therein; a conductive substrate disposed adjacent to a lower surface of the ceramic substrate, serving also as a plasma generating electrode, and having the same diameter as the ceramic substrate; a support substrate disposed adjacent to a lower surface of the conductive substrate, having a greater diameter than the conductive substrate, and electrically insulated from the conductive substrate; and a mounting flange constituting a part of the support substrate and radially extending out of the conductive substrate.

Abstract: A wafer placement includes an alumina substrate having a wafer placement surface at an upper surface, and incorporating an electrode; a brittle cooling substrate which is bonded to a lower surface of the alumina substrate, and in which a refrigerant flow path is formed; and a ductile connection member stored in a storage hole opened in a lower surface of the cooling substrate in a state of restricted axial rotation and in a state of being engaged with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section, wherein the storage hole is provided in the refrigerant flow path.

Abstract: A honeycomb filter comprising a pillar-shaped honeycomb structure body having a porous partition wall and a plugging portion, wherein, in a pore diameter distribution of the partition wall, in the case where the pore diameter (µm) whose cumulative pore volume is 10% of the total pore volume is denoted by D10, the pore diameter (µm) whose cumulative pore volume is 50% of the total pore volume is denoted by D50, and the pore diameter (µm) whose cumulative pore volume is 90% of the total pore volume is denoted by D90, all of the following equations (1) to (6) are satisfied. 3.9 ? ? m<D10 ­­­(1) 10.5 ? ? m<D50<16 .6 ? ? m ­­­(2) D90<38 .7 ? ? m ­­­(3) log ? D90-logD10 / log ? D50<0 .80 ­­­(4) log ? D90 / logD50<1 .36 ­­­(5) log ? D50 / logD10<1 .

Abstract: A wafer placement table includes: a ceramic substrate having a wafer placement surface at an upper surface, and incorporating an electrode; a cooling substrate which is bonded to a lower surface of the ceramic substrate, and in which a refrigerant flow path is formed; a power supply terminal connected to the electrode; and a power supply terminal hole vertically penetrating the cooling substrate and storing the power supply terminal. The power supply terminal hole intersects with the refrigerant flow path.

Abstract: A method for producing a shrink-fitted member by arranging a pillar shaped ceramic body inside a deep-drawn stainless steel pipe and shrink-fitting them. The method includes: a preparing step of preparing the deep-drawn stainless steel pipe produced by deep-drawing and the pillar shaped ceramic body; a heating step of heating the deep-drawn stainless steel pipe to 900° C. or more; and a shrink-fitting step of inserting the pillar shaped ceramic body into the heated deep-drawn stainless steel pipe and shrink-fitting them.

Abstract: A honeycomb filter includes a honeycomb structure body that has porous partition walls disposed so as to surround cells, and plugging portions that are disposed at any one of the ends on the inflow end face and the ends on the outflow end face. A cross-sectional shape of each of the inflow cells is octagonal and a cross-sectional shape of each of the outflow cells is quadrangular. An area ratio (S1/S2) of a cross-sectional area S2 of each of the outflow cells to a cross-sectional area S1 of each of the inflow cells is 1.40 to 2.20. The plugging portions have convex portions that protrude from the end faces on which the plugging portions are disposed, toward the outer sides, and have a protruding height H of 0.3 to 3.0 mm, and the plugging portions have a plugging depth L of 4.0 to 9.0 mm.

Abstract: A honeycomb filter comprising a pillar-shaped honeycomb structure body having a porous partition wall disposed to surround a plurality of cells which serve as fluid through channels extending from a first end face to a second end face and a plugging portion provided at an open end on the first end face side or the second end face side of each of the cells, wherein the partition wall has an average number of branches of pores existing at the outermost surface of the partition wall of greater than 7.5 and less than 9.0.