Patents Assigned to NGK Insulators
  • Publication number: 20230223291
    Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface including a wafer placement surface and resin porous plugs that have upper surfaces that are exposed from the wafer placement surface. The resin porous plugs are press-fitted and secured in plug insertion holes that extend through the ceramic plate in an up-down direction and allow gas to flow.
    Type: Application
    Filed: October 24, 2022
    Publication date: July 13, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Seiya INOUE, Tatsuya KUNO, Natsuki HIRATA
  • Publication number: 20230220283
    Abstract: A membrane reactor includes a catalyst layer, a separation membrane, and a buffer layer. The catalyst layer contains a catalyst for promoting a conversion reaction from a feed gas containing hydrogen and carbon oxide to a liquid fuel. The separation membrane is permeable to water vapor which is a byproduct of the conversion reaction. The buffer layer is disposed between the separation membrane and the catalyst layer, and permeable to the water vapor toward the separation membrane.
    Type: Application
    Filed: February 27, 2023
    Publication date: July 13, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Hirofumi KAN, Atsushi TORII, Kazuki IIDA
  • Publication number: 20230207370
    Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate; a metal joining layer and a cooling plate (conductive substrate) provided at a lower surface of the ceramic plate; a first hole penetrating the ceramic plate in an up-down direction; and a through-hole and a gas hole (second hole) penetrating the conductive substrate in an up-down direction, and communicating with the first hole. A dense insulating case has a bottomed hole 64 opened in a lower surface, and is disposed in the first hole and the second hole. A plurality of microholes penetrates a bottom of the bottomed hole in an up-down direction. A porous plug is disposed in the bottomed hole and in contact with the bottom.
    Type: Application
    Filed: November 15, 2022
    Publication date: June 29, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Seiya INOUE, Tatsuya KUNO
  • Publication number: 20230193806
    Abstract: A catalyst support for induction heating includes: a honeycomb structure including a pillar shaped honeycomb structure portion having: an outer peripheral wall; and a partition wall disposed on an inner side of the outer peripheral wall, the partition wall defining a plurality of cells, each of the cells extending from an end face on an inlet side to an end face on an outlet side in a gas flow direction to form a flow path; a catalyst supported onto an interior of the partition wall; and at least one magnetic body provided within the honeycomb structure, wherein the catalyst support has a region A where the catalyst is not supported, at least on the end face side of the catalyst support on the inlet side in the gas flow direction, and wherein the magnetic body is arranged at least in the region A in the gas flow direction.
    Type: Application
    Filed: February 14, 2023
    Publication date: June 22, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Yukio MIYAIRI, Masaaki MASUDA, Shuichi ICHIKAWA, Takuya ISHIHARA, Kai MATSUMOTO, Norihisa FUJIE, Yoichi AOKI
  • Publication number: 20230197502
    Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate that has an upper surface including a wafer placement surface; a conductive base that is disposed on a lower surface of the ceramic plate; a first hole that extends through the ceramic plate; a second hole that extends through the conductive base; a porous plug that has an upper surface that is exposed from an upper opening of the first hole and a lower surface that is flush with or below an upper surface of the conductive base; an insulating pipe that has an upper surface that is located below the wafer placement surface and a lower surface that is located below the lower surface of the porous plug; and an integrally formed member that is obtained by integrally forming the porous plug and the insulating pipe.
    Type: Application
    Filed: December 13, 2022
    Publication date: June 22, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Seiya INOUE, Tatsuya KUNO, Kanta MIYAMOTO
  • Publication number: 20230197500
    Abstract: A wafer placement table includes a ceramic substrate having a wafer placement surface on an upper surface thereof and containing an electrode therein, a cooling substrate made of a metal-ceramic composite and having a cooling medium passage therein, and a metal joining layer configured to join a lower surface of the ceramic substrate to an upper surface of the cooling substrate. A thickness of a lower part of the cooling substrate below the cooling medium passage is greater than or equal to 13 mm, or greater than or equal to 43% of an overall thickness of the cooling substrate.
    Type: Application
    Filed: February 13, 2023
    Publication date: June 22, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Seiya INOUE, Hiroshi TAKEBAYASHI, Tatsuya KUNO
  • Publication number: 20230187187
    Abstract: A wafer placement table includes a conductor unit. In the wafer placement table, a sub-RF electrode (first conductive layer) and a jumper layer (second conductive layer) are embedded at different levels in a ceramic substrate having a wafer placement surface, and the conductor unit establishes electrical continuity between the sub-RF electrode and the jumper layer. The conductor unit is a transversely placed coil or a transversely placed perforated cylindrical body.
    Type: Application
    Filed: December 6, 2022
    Publication date: June 15, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Mikiya Tadaki, Kazuhiro Nobori, Takuya Yokono, Keita Yamana, Reon Takanoya, Atsuki Iriyama
  • Publication number: 20230187261
    Abstract: A wafer placement table includes a ceramic substrate having a wafer placement surface; a first electrically conductive layer embedded in the ceramic substrate; and an electrically conductive via connected at one end to the first electrically conductive layer, wherein the electrically conductive via includes a plurality of columnar members connected together in a vertical direction, and wherein the area of the connection surface of one of two columnar members connected to each other is larger than the area of the connection surface of the other.
    Type: Application
    Filed: October 21, 2022
    Publication date: June 15, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Hiroya SUGIMOTO, Masaki ISHIKAWA
  • Publication number: 20230184151
    Abstract: A cylindrical can body capable of housing a honeycomb structure therein, the cylindrical can body including: a coil for induction-heating the honeycomb structure; a cylindrical member made of an insulating material; and a cylindrical metal member capable of housing the coil and the cylindrical member therein, wherein, in a cross section parallel to an axial direction of the cylindrical member, (i) the coil is provided radially outward from an inner circumferential surface of the cylindrical member, and at least a part of the coil is embedded in the cross section of the cylindrical member; or (ii) the coil is provided on an outer circumferential portion of the cylindrical member.
    Type: Application
    Filed: February 7, 2023
    Publication date: June 15, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Yukio MIYAIRI, Masaaki MASUDA, Shuichi ICHIKAWA, Takuya ISHIHARA
  • Publication number: 20230167577
    Abstract: A refining method according to the present invention is a refining method for crystallizing a compound with at least one crystal form, including setting, as a target wavelength and a target concentration, a specific infrared wavelength and a specific concentration at which a specific crystal form precipitates from a solution of the compound dissolved in a solvent, and using an infrared radiation apparatus capable of emitting infrared radiation including the target wavelength to evaporate the solvent and precipitate the specific crystal form while irradiating a solution of the compound dissolved in the solvent at the target concentration with infrared radiation including the target wavelength.
    Type: Application
    Filed: December 28, 2022
    Publication date: June 1, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Norimitsu TOHNAI, Daiki KATO, Yoshio KONDO, Kazunari YAMADA
  • Publication number: 20230170191
    Abstract: A wafer placement table has a wafer placement surface that allows a wafer to be placed thereon. The wafer placement table includes a ceramic substrate having a built-in electrode, a cooling substrate including a refrigerant flow path, a metal joining layer that joins the ceramic substrate to the cooling substrate, and a plurality of small protrusions disposed on a reference plane of the wafer placement surface. The top surfaces of the small protrusions can support the lower surface of a wafer. The top surfaces of all the small protrusions are located on the same plane. In a flow path overlapping range of the wafer placement surface in which the wafer placement surface overlaps the refrigerant flow path in plan view, an area ratio of the small protrusions is minimized in a portion facing a most upstream portion of the refrigerant flow path.
    Type: Application
    Filed: September 14, 2022
    Publication date: June 1, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Seiya INOUE, Tatsuya KUNO, Ikuhisa MORIOKA
  • Publication number: 20230154781
    Abstract: A wafer placement table includes an alumina base that has a wafer placement surface on its upper surface, and incorporates an electrode; a brittle cooling base bonded to a lower surface of the alumina base; and a ductile connection member stored in a storage hole, opened in a lower surface of the cooling base, in a state of restricted axial rotation and in a state of engaging with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section.
    Type: Application
    Filed: July 29, 2022
    Publication date: May 18, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Tatsuya KUNO, Seiya INOUE
  • Publication number: 20230155106
    Abstract: A heat treatment system disclosed herein may include: one or more saggars, each of which is configured to accommodate powder of a lithium positive electrode material; and a heat treatment furnace configured to heat-treat the powder accommodated in the one or more saggars. Each of the one or more saggars may include a contact surface which is to make contact with the powder, wherein at least the contact surface of each saggar is constituted of a nickel-based alloy. The heat treatment furnace may be configured to heat-treat the powder accommodated in the one or more saggars at a temperature of 300° C. or more and 1000° C. or less for a duration of 10 hours or more and 30 hours or less.
    Type: Application
    Filed: October 14, 2022
    Publication date: May 18, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Masatoshi HIRANO, Takeshi KOMAKI
  • Publication number: 20230150957
    Abstract: A refining method according to the present invention is a refining method for crystallizing a compound with at least one crystal form, including: setting, as a target wavelength, a specific infrared wavelength at which a specific crystal form precipitates from a solution of the compound dissolved in a solvent; and using an infrared radiation apparatus capable of emitting infrared radiation including the target wavelength to evaporate the solvent and precipitate the specific crystal form while irradiating the solution with infrared radiation including the target wavelength. The specific infrared wavelength is preferably set as the target wavelength based on an infrared absorption spectrum of the crystal form and the dissolution rate of the compound in the solvent.
    Type: Application
    Filed: December 28, 2022
    Publication date: May 18, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Norimitsu TOHNAI, Daiki KATO, Yoshio KONDO, Kazunari YAMADA
  • Publication number: 20230150958
    Abstract: A refining method according to the present invention is a refining method for crystallizing a compound with at least one crystal form, including setting, as a target wavelength and a target temperature, a specific infrared wavelength and a specific temperature at which a specific crystal form precipitates from a solution of the compound dissolved in a solvent, and using an infrared radiation apparatus capable of emitting infrared radiation including the target wavelength to evaporate the solvent and precipitate the specific crystal form while irradiating the solution with infrared radiation including the target wavelength and adjusting a temperature of the solution to the target temperature.
    Type: Application
    Filed: December 28, 2022
    Publication date: May 18, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Norimitsu TOHNAI, Daiki KATO, Yoshio KONDO, Kazunari YAMADA
  • Publication number: 20230146815
    Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode; a cooling base having a refrigerant flow channel; and a bonding layer that bonds the ceramic base with the cooling base, wherein in an area that overlaps the wafer placement surface in plan view of the refrigerant flow channel, a cross-sectional area of the refrigerant flow channel at a most downstream part of the refrigerant flow channel is less than the cross-sectional area at a most upstream part of the refrigerant flow channel.
    Type: Application
    Filed: August 15, 2022
    Publication date: May 11, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Seiya INOUE, Tatsuya KUNO, Ikuhisa MORIOKA
  • Publication number: 20230144107
    Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base having a refrigerant flow channel, and a bonding layer that bonds the ceramic base with the cooling base, wherein in an area that overlaps the wafer placement surface in plan view of the refrigerant flow channel, a distance from a ceiling surface of the refrigerant flow channel to the wafer placement surface at a most downstream part of the refrigerant flow channel is shorter than the distance at a most upstream part of the refrigerant flow channel.
    Type: Application
    Filed: August 10, 2022
    Publication date: May 11, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Seiya INOUE, Tatsuya KUNO, Ikuhisa MORIOKA
  • Publication number: 20230146001
    Abstract: A wafer placement table includes a central ceramic base that has an upper surface including a wafer placement surface, an outer circumferential ceramic base that has an upper surface including a focus ring placement surface, and a cooling base that includes a central portion, an outer circumferential portion, and a coupler that couples the central portion and the outer circumferential portion with each other. The cooling base has a central refrigerant flow path that is formed in the central portion and an outer circumferential refrigerant flow path that is formed in the outer circumferential portion. The coupler has an upward groove that open from an upper surface and that have an annular shape, and a downward groove that opens from a lower surface, that have a ceiling surface higher than a bottom surface of the upward groove, and that have an annular shape.
    Type: Application
    Filed: August 15, 2022
    Publication date: May 11, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Tatsuya KUNO, Seiya INOUE
  • Patent number: 11644252
    Abstract: A heat exchanger 100 includes: an inner cylinder 10 through which a first fluid can flow, the inner cylinder 10 being configured to be capable of housing a heat recovery member 40; an outer cylinder 20 disposed so as to be spaced on a radially outer side of the inner cylinder 10 such that a second fluid can flow between the outer cylinder 20 and the inner cylinder 10; and an intermediate cylinder 30 disposed between the inner cylinder 10 and the outer cylinder 20, the intermediate cylinder 30 partitioning a flow path for the second fluid into an inner flow path 31b and an outer flow path 31a. In the heat exchanger, the intermediate cylinder 30 includes communication holes 32 that are communicated in a radial direction, and the communication holes 32 are provided in an axial direction of the intermediate cylinder 30.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: May 9, 2023
    Assignee: NGK Insulators, Ltd.
    Inventors: Takafumi Hamada, Tatsuo Kawaguchi, Takeshi Sakuma, Yutaro Fumoto
  • Publication number: 20230138000
    Abstract: An AlN ceramic substrate of the present invention contains yttrium aluminate, and has a volume resistivity of 3×109 ?cm or more at 550° C.
    Type: Application
    Filed: October 14, 2022
    Publication date: May 4, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Keita YAMANA, Kazuhiro NOBORI