Abstract: A wafer placement includes an alumina substrate having a wafer placement surface at an upper surface, and incorporating an electrode; a brittle cooling substrate which is bonded to a lower surface of the alumina substrate, and in which a refrigerant flow path is formed; and a ductile connection member stored in a storage hole opened in a lower surface of the cooling substrate in a state of restricted axial rotation and in a state of being engaged with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section, wherein the storage hole is provided in the refrigerant flow path.

Abstract: A wafer placement table includes an alumina base that has a wafer placement surface on its upper surface, and incorporates an electrode; a brittle cooling base bonded to a lower surface of the alumina base; and a ductile connection member stored in a storage hole, opened in a lower surface of the cooling base, in a state of restricted axial rotation and in a state of engaging with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section.

Abstract: A ceramic heater includes: a ceramic plate which is provided with a wafer placement surface on an upper surface and in which a heating resistor is internally embedded; a ceramic tubular shaft with an upper end bonded to a lower surface of the plate; and power feeding members which penetrate a peripheral wall part of the tubular shaft in a vertical direction, and are electrically connected to the heating resistor. The power feeding members are embedded in the peripheral wall part of the tubular shaft, and are in tight contact with a ceramic material of the tubular shaft.

Abstract: A method of regenerating an acid gas adsorption device includes the steps of: causing an acid gas to be adsorbed to an acid gas adsorption material by supplying the acid gas to an acid gas adsorption device so that the acid gas is brought into contact with an acid gas adsorption layer; causing the acid gas to be desorbed from the acid gas adsorption material; and causing an acid gas adsorption material to adhere to the acid gas adsorption layer of the acid gas adsorption device, which has been subjected to the step of causing the acid gas to be adsorbed and the step of causing the acid gas to be desorbed, by supplying the acid gas adsorption material thereto.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface including a reference surface on which multiple small projections for supporting a wafer are provided and that contains an electrostatic electrode; a plug arrangement hole that is provided in the ceramic plate; an electrostatic electrode opening portion that is provided at a position in the electrostatic electrode through which the plug arrangement hole extends; a cooling plate that is provided on a lower surface of the ceramic plate; a gas hole that extends through the cooling plate and that is in communication with the plug arrangement hole; a plug that is arranged in the plug arrangement hole and that includes a gas flow path; and a raised portion that surrounds the gas flow path and that has a top surface higher than the reference surface and lower than top surfaces of the small projections.

Abstract: A method of regenerating an acid gas adsorption device includes the steps of: causing an acid gas to be adsorbed to an acid gas adsorption material by supplying the acid gas to an acid gas adsorption device so that the acid gas is brought into contact with an acid gas adsorption layer; causing the acid gas to be desorbed from the acid gas adsorption material; pulverizing the acid gas adsorption device, which has been subjected to the step of causing the acid gas to be adsorbed and the step of causing the acid gas to be desorbed, to provide a regenerated material powder; and molding a base material from the regenerated material powder to form an acid gas adsorption layer including an acid gas adsorption material on a surface of the base material.

Abstract: Provided is a lithium secondary battery including a positive electrode layer composed of a cobalt-containing lithium composite oxide sintered body, a negative electrode layer composed of a titanium-containing sintered body, a ceramic separator interposed between the positive electrode layer and the negative electrode layer, an electrolyte impregnating at least the ceramic separator, and an exterior body having a closed space and accommodating the positive electrode layer, the negative electrode layer, the ceramic separator, and the electrolyte within the closed space. The positive electrode layer, the ceramic separator, and the negative electrode layer are bonded together. The lithium composite oxide sintered body contains, as an auxiliary agent, 0.05 to 2.0 mol % of boron with respect to the content of cobalt in the lithium composite oxide sintered body or 0.05 to 1.2 mol % of strontium with respect to the aforementioned cobalt content.

Abstract: A pillar shaped honeycomb structure for induction heating, the honeycomb structure being made of ceramics and including: an outer peripheral wall; and a partition wall disposed on an inner side of the outer peripheral wall, the partition wall defining a plurality of cells, each of the cells penetrating from one end face to other end face to form a flow path, wherein a composite material containing a conductor and a non-conductor is provided in the cells in a region of 50% or less of the total length of the honeycomb structure from one end face, and wherein the conductor is a conductor that generates heat in response to a change in a magnetic field.

Abstract: A method for manufacturing a ceramic member includes a mark process for forming a mark indicating information about a ceramic green body on the ceramic green body by using a mark material capable of being erased by a predetermined heat treatment; and a heat treatment process for erasing the mark by applying the ceramic green body to the predetermined heat treatment.

Abstract: A heat exchange member includes: a honeycomb structure including: an outer peripheral wall; and partition walls arranged on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells each extending from a first end face to a second end face to form a flow path for a first fluid; and a covering member being configured to cover an outer peripheral surface of the outer peripheral wall. In a cross section of the honeycomb structure orthogonal to a flow path direction for the first fluid, the partition walls include first partition walls extending in a radial direction and second partition walls extending in a circumferential direction. A part of at least one of the outer peripheral wall and the second partition walls includes at least one slit 30.

Abstract: A heat generating device includes a honeycomb structure, a first electrode, and a second electrode. The honeycomb structure includes an outer wall and partition walls. The partition walls define a plurality of cells extending from a first end surface to a second end surface. The first electrode is provided on a profile surface of the honeycomb structure. The second electrode is provided on the profile surface, and is located away from the first electrode. The profile surface includes: a first portion located between the first electrode and the second electrode; and a second portion located on a side opposite to the first portion with respect to a center of a cross section of the honeycomb structure taken along a direction orthogonal to an extending direction of the cells. The honeycomb structure has a first slit. The first slit extends from the first portion toward the second portion.

Abstract: A gas sensor includes a laminated body constituted by at least two ceramic layers laminated thereon, and having at least one gas introduction port, and at least one internal vacancy, and an outer side electrode formed on the laminated body, and provided in order to discharge oxygen from the internal vacancy, wherein a slit portion connected to an external space, and which is formed in the laminated body in covering relation to the outer side electrode, is interposed between the ceramic layers and the outer side electrode.

Abstract: A wafer placement table includes a ceramic plate, a cooling plate and a refrigerant flow path. The refrigerant flow path has a first variable section and a second variable section. The first variable section is provided such that the cross-sectional area of the refrigerant flow path gradually decreases as it proceeds in the direction of refrigerant flow from a starting point of the first variable section. The second variable section is provided such that, after the cross-sectional area of the refrigerant flow path is once expanded from the cross-sectional area of the refrigerant flow path at an end point of the first variable section in a first expansion section right before a starting point of the second variable section, the cross-sectional area of the refrigerant flow path gradually decreases as it proceeds in the direction of refrigerant flow from the starting point of the second variable section.

Abstract: A method of operating a separation apparatus using a separation membrane includes a step of performing a normal operation for supplying a mixed gas containing a plurality of types of gases to a separation membrane at a constant set pressure, to thereby separate a substance in the mixed gas, which has high permeability through the separation membrane, from any other substance and a step of performing a high pressure treatment for supplying the mixed gas to the separation membrane at a pressure higher than the set pressure at the time of starting supply of the mixed gas to the separation membrane before the normal operation or in the middle of the normal operation.

Abstract: A wafer placement table includes a ceramic plate having a wafer placement surface on its upper surface, a cooling plate on a lower surface of the ceramic plate, a refrigerant flow path in the cooling plate, and an insulating hole located beside the refrigerant flow path in the cooling plate and extending from a lower surface of the cooling plate to a ceiling located higher than 2/3 of a height of the refrigerant flow path from its bottom.

Abstract: A porous body design method using a computer causes the computer to execute, a plurality of times, a structure generation process of virtually generating a three-dimensional structure of a porous body on the computer on the basis of generation parameter values for generating the porous body, a characteristic prediction/calculation process of predicting or calculating the characteristics of the porous body having the three-dimensional structure generated by the structure generation process, an evaluation process of evaluating the characteristics of the porous body predicted or calculated by the characteristic prediction/calculation process, and an optimization process of changing the generation parameter values to search for optimal generation parameter values, in which the three-dimensional structure of the porous body is determined on the basis of evaluation results of the characteristics of the porous body obtained by the evaluation process.

Abstract: An electrically heating support according to the present invention includes: a ceramic honeycomb structure, the honeycomb structure including an outer peripheral wall and a partition wall arranged on an inner side of the outer peripheral wall, the partition wall defining a plurality of cells each extending from one end face to other end face to form a flow path; and a pair of metal electrodes 5 for applying a voltage to a honeycomb structure, wherein each of the pair of metal electrodes 5 includes: at least one connection portion 50 fixed to an outer peripheral surface of the honeycomb structure; and at least one drawer portion 51 extending from the connection portion 50, and wherein the drawer portion is provided with at least two bent portions 510, and extending directions of ridgelines of the at least two bent portions 510 are different from each other.

Abstract: The bonded substrate includes the silicon nitride ceramic substrate, a copper plate, the bonding layer, and penetrating regions. The copper plate and the bonding layer are patterned into a predetermined shape, and are disposed over a main surface of the silicon nitride ceramic substrate. The bonding layer bonds the copper plate to the main surface of the silicon nitride ceramic substrate. The penetrating regions each include one or more penetrating portions penetrating continuously from the main surface of the substrate into the silicon nitride ceramic substrate to a depth of 3 ?m or more and 20 ?m or less, and contain silver, and the number of penetrating regions present per square millimeter of the main surface of the substrate is one or more and 30 or less.

Abstract: A honeycomb structure made of ceramics, wherein the honeycomb structure includes: a borosilicate; and silicon particles doped with at least one dopant, the dopant is a Group 13 element or a Group 15 element, the silicon particles have a dopant amount (A) of 1×1016 to 5×1020/cm3, and the honeycomb structure has a silicon particle content (B) of 30 to 80% by mass.

Abstract: A wafer placement table includes: a ceramic substrate that has a wafer placement surface at an upper surface of the ceramic substrate; an electrode that is incorporated in the ceramic substrate; and an electrically conductive electrode extraction portion that is incorporated in the ceramic substrate and is electrically connected to the electrode. A volume content percentage of a ceramic material that is identical to a main component of the ceramic substrate is high in the electrode extraction portion compared with the electrode.