Abstract: There is provided a lead-free free-cutting beryllium copper alloy consisting of from 1.80% to 2.10% by weight of Be, from 0.10% to 3.00% by weight of Si, from 0.20% to 0.40% by weight of Co, from 0% to 0.10% by weight of Fe, from 0% to 0.10% by weight of Ni, and the balance being Cu and inevitable impurities, wherein the beryllium copper alloy includes a matrix phase being an ? phase, a Si-rich phase being a ? phase rich in Si, and Co—Be—Si intermetallic compound grains containing Co, Be, and Si, and optionally Fe and/or Ni.

Abstract: There is provided a susceptor for a film deposition apparatus or for an etching apparatus, including a ceramic plate including a first surface on which a wafer is to be placed, and a second surface opposed to the first surface, and embedded with an internal electrode; a cylindrical ceramic shaft attached to the second surface of the ceramic plate; a gas supply hole penetrating through the ceramic plate and the ceramic shaft to extend from the first surface of the ceramic plate to a distal end of the ceramic shaft away from the ceramic plate through the second surface; and a porous plug embedded in a portion of the gas supply hole corresponding to at least the ceramic plate.

Abstract: There is provided a Group-III element nitride semiconductor substrate including a first surface and a second surface, in which even when devices to be produced on the first surface are increased in size, variations in device characteristics between the devices in the same substrate are suppressed. A Group-III element nitride semiconductor substrate includes a first surface and a second surface. The Group-III element nitride semiconductor substrate satisfies at least one of the following items (1) to (3): (1) The main surface has a maximum height Wz of a surface waviness profile of 150 nm or less; (2) The main surface has a root mean square height Wq of the surface waviness profile of 25 nm or less; (3) The main surface has an average length WSm of surface waviness profile elements of 0.5 mm or more.

Abstract: An inspection device for a pillar shaped honeycomb filter, wherein the inspection device includes: a housing portion; an introduction pipe and a discharge pipe, each of the introduction pipe and the discharge pipe being connected to the housing portion; a particle generation portion for generating particles; a particle introduction portion for introducing the particles generated by the particle generation portion into the introduction pipe; a gas stirring portion disposed in the introduction pipe on an upstream side of the particle introduction portion; a particle concentration adjusting portion disposed in the introduction pipe on a downstream side of the particle introduction portion; and particle counters for measuring the number of particles, the particle counters being disposed in the introduction pipe and the discharge pipe on the downstream side of the particle introduction portion.

Abstract: Provided is a method for producing a circuit board assembly, capable of effectively suppressing the deterioration of the battery performance in a high-temperature and high-humidity environment that can occur due to reflow soldering, while employing reflow soldering. The production method includes connecting a lithium ion secondary battery to a circuit board by reflow soldering, wherein the lithium ion secondary battery has a state of charge (SOC) of 30 to 100% during reflow soldering.

Abstract: A honeycomb filter includes a pillar-shaped honeycomb structure having a porous partition wall disposed so as to surround a plurality of cells which serve as a fluid through channel extending from a first end face to a second end face; a plugging portion provided at either an end on the first end face side or the second end face side of the cell; and a catalyst for purifying exhaust gas that is loaded on the partition wall; wherein, in the state where the catalyst is not loaded, the partition wall has a pore volume of 0.07 to 0.30 cc/g of pores having a pore diameter of 10 ?m or less, an average pore diameter of 11 to 23 ?m, and a porosity of 56 to 65%.

Abstract: A communication apparatus, which is mounted in a smart meter, includes: a secondary battery; a transmitter-receiver circuit that is operable by using electric power supplied from the secondary battery; and an antenna that emits a wireless signal based on a transmission signal, which is output from the transmitter-receiver circuit, to a space, wherein the secondary battery is a lithium-ion battery; and wherein when electric power supplied from outside to the smart meter is cut off, the transmitter-receiver circuit outputs the transmission signal indicating a specified alarm to the antenna by using the electric power supplied from the secondary battery and thereby wirelessly transmits the alarm via the antenna.

Abstract: Provided is a lithium secondary battery including a positive electrode layer composed of a lithium complex oxide sintered body, a negative electrode layer composed of a titanium-containing sintered body, a ceramic separator interposed therebetween, an electrolytic solution, and an exterior body including a closed space, which accommodates the positive electrode layer, the negative electrode layer, the ceramic separator, and the electrolytic solution, wherein the positive electrode layer, the ceramic separator, and the negative electrode layer are bonded together, a ratio C/A of a capacity C of the positive electrode layer to a capacity A of the negative electrode layer is 1.03 to 2.30, a ratio Tc/Ta of a thickness Tc of the positive electrode layer to a thickness Ta of the negative electrode layer is 0.50 to 2.00, the thickness Tc is 50 to 1000 ?m, and the thickness Ta is 50 to 1200 ?m.

Abstract: A drying device configured to dry a resin film including a solvent, the drying device may include: a housing; a partition disposed in the housing and partitioning a space in the housing into a first space and a second space; a conveyor configured to convey the resin film in the first space; a first heater disposed in the second space and configured to radiate electromagnetic waves to the resin film being conveyed by the conveyor; and a window disposed in the partition and configured to allow the electromagnetic waves radiated from the first heater to penetrate therethrough. The first heater may be configured to radiate electromagnetic waves in a wavelength band below 4.0 ?m to the resin film and to absorb electromagnetic waves in a wavelength band of at least 4.0 ?m or more.

Abstract: A heater element includes: a honeycomb structure comprising an outer peripheral wall and partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face to form a flow path, at least the partition walls 14 being made of a material having a PTC property; a pair of electrodes provided on the first end face and the second end face; and terminals provided on at least a part of the pair of electrodes.

Abstract: A drying device may include: a body defining a drying space therein; a heater disposed in the drying space to face a surface of the film moving in the drying space, including an inner tube and an outer tube, and configured to radiate electromagnetic waves through the outer tube, wherein a surface temperature of the outer tube is maintained at 200 degrees or less; and a reflector at least partially covering the heater and configured to reflect at least a part of the electromagnetic waves radiated from the outer tube of the heater toward the film moving in the drying space. The heater may be configured to radiate electromagnetic waves in a wavelength band below a predetermined wavelength to the film and is configured to absorb electromagnetic waves in a wavelength band equal to or above the predetermined wavelength.

Abstract: There is provided a ceramic susceptor where a conduction failure due to defective connection of inner electrodes is unlikely to occur. The ceramic susceptor includes a ceramic susceptor main body including a first surface for a wafer to be placed thereon, and a second surface opposite the first surface; an inner electrode that is embedded in the ceramic susceptor main body; and a terminal having one end connected to the inner electrode and another end reaching the second surface of the ceramic susceptor main body. The inner electrode includes a horizontal portion provided in parallel with the first surface, and a non-horizontal portion extending from the horizontal portion toward the first surface or the second surface. The horizontal portion and the non-horizontal portion are integrally formed by bending one electrode such that a bent portion that forms a boundary between the horizontal portion and the non-horizontal portion is present.

Abstract: A heater element includes: a honeycomb structure having an outer peripheral wall and partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face to form a flow path; a first electrode including an electrode portion A1 provided on the first end face, and an electrode portion B1 connected to the electrode portion A1 and provided on surfaces of the partition walls in an extending direction of the flow path from the first end face; and a second electrode including an electrode portion A2 provided on the second end face, and an electrode portion B2 connected to the electrode portion A2 and provided on surfaces of the partition walls in the extending direction of the flow path from the second end face.

Abstract: A wafer placement table includes a ceramic plate that has a wafer placement surface, a first RF electrode that is circular and that is embedded in the ceramic plate, a first RF terminal that is electrically connected to the first RF electrode, a second RF electrode that is annular and that is positioned at an outer side of the first RF electrode in plan view, and that is embedded in the ceramic plate at a different depth from the first RF electrode, a second RF terminal that is electrically connected to the second RF electrode and a connection circuit that connects the second RF terminal and the second RF electrode. The connection circuit is formed of electroconductive wires that are in a mesh-patterned form or in a radial form. A width of the electroconductive wires becomes broader from the second RF electrode toward the second RF terminal.

Abstract: An electrically heated catalyst system includes a catalyst support that is made of a conductive material and includes an outer surface, a pair of metal terminals attached to the outer surface of the catalyst support, a buck-boost converter that applies a voltage across the two metal terminals, an inverter that is disposed between the two metal terminals and the buck-boost converter and switches a direction of energization to the two metal terminals, and a controller that controls the inverter. When an energization time to the two metal terminals reaches the end of a prescribed time interval, the controller switches the direction of energization to the two metal terminals.

Abstract: A honeycomb structure includes: a honeycomb structure portion 1 made of ceramics, the honeycomb structure portion 1 including an outer peripheral wall 10, a partition wall 11defining a plurality of cells 11a, and a plurality of slits 12 cut inwardly in a radial direction from the outer peripheral wall 10; a pair of electrode layers 2 being provided on an outer surface of the outer peripheral wall 10 so as to face each other across a central axis CA of the honeycomb structure portion 1; and reinforcing layers 3 provided on the outer surface of the outer peripheral wall 10 so as to be located between the pair of electrode layers 2 in a circumferential direction 1C of the honeycomb structure portion 1, the reinforcing layers 3 being electrically separated from the pair of electrode layers 2 by the slits 12.

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface and incorporating an electrode, a cooling base in which a refrigerant flow channel is formed, and a metal bonding layer that bonds the ceramic base with the cooling base. The cooling base includes a ceiling base made of a metal matrix composite material or a low thermal expansion metal material and defining a ceiling of the refrigerant flow channel, a grooved base of which a main component is made of the same ceramic material as a main component of the ceramic base and on a top surface of which a flow channel groove defining a bottom and a side wall of the refrigerant flow channel is provided, and a metal ceiling bonding layer that bonds a bottom surface of the ceiling base with the top surface of the grooved base.

Abstract: A method for producing a ceramic formed body comprises: a wet mixing step of adding a liquid containing water to ceramic raw material mixed powder and subjecting it to wet mixing in a continuous mixer; and an extrusion molding step of feeding the wet mixed powder obtained in the wet mixing step to an extruder by a belt feeder and extruding the wet mixed powder. In the method for producing the ceramic formed body, an amount of the wet mixed powder fed to the extruder is adjusted based on an amount of mass change of the wet mixed powder stored in a reservoir provided between the continuous mixer and the belt feeder.

Abstract: A semiconductor-manufacturing apparatus member includes a ceramic plate having an upper surface serving as a wafer placement surface, a plug disposed in an undersurface of the ceramic plate and including a dense body and a gas flow channel that extends through the body in a thickness direction of the body while winding, a gas outlet port that extends through the ceramic plate in a thickness direction of the ceramic plate to be connected to an upper portion of the gas flow channel, and a metal cooling plate joined to the undersurface of the ceramic plate, and including a gas supply channel through which gas is supplied from a lower portion of the gas flow channel. In the plug, at least a portion in length of the gas flow channel is formed from a porous member.

Abstract: Provided is a method for producing a circuit board assembly, including connecting a lithium ion secondary battery to a circuit board by reflow soldering, wherein the lithium ion secondary battery has been subjected to at least initial charging and discharging, and the lithium ion secondary battery has a state of charge (SOC) of 0 to 29% during reflow soldering.