Patents Assigned to NGK Insulators
  • Publication number: 20240318913
    Abstract: A heat treatment furnace may include: a furnace body including an entrance and an exit; a lower plate member disposed in the furnace body; an upper plate member disposed above the lower plate member, wherein the upper plate member is configured to allow the plurality of objects stacked in an up-down direction to be placed thereon; an intermediate member interposed between the lower plate member and the upper plate member in the up-down direction and attached to the lower plate member; and a pusher configured to push the upper plate member forward from the entrance toward the exit. The upper plate member may move forward above the lower plate member. A sliding resistance between the upper plate member and the intermediate member may be smaller than a sliding resistance between the upper plate member and the lower plate member.
    Type: Application
    Filed: March 20, 2024
    Publication date: September 26, 2024
    Applicants: NGK INSULATORS, LTD., NGK KILNTECH, CORPORATION, NGK ADREC CO., LTD.
    Inventors: Minoru YAMAGUCHI, Tsuneo KOMIYAMA, Takeshi KOMAKI, Terukazu IWATA, Kazuya NARUMIYA
  • Publication number: 20240322777
    Abstract: A method of producing a composite substrate includes: forming a first layer on a lower surface side of a piezoelectric substrate having an upper surface and a lower surface facing each other and having an electrode formed on the lower surface; performing flattening treatment to set a waviness of a surface of the first layer to more than 2 nm and 70 nm or less; and joining a support substrate to a first layer side of the piezoelectric substrate having the first layer formed thereon.
    Type: Application
    Filed: June 7, 2024
    Publication date: September 26, 2024
    Applicant: NGK INSULATORS, LTD.
    Inventors: Takahiro YAMADERA, Tsuyoshi IIDA
  • Patent number: 12101079
    Abstract: A silicon film is provided on a supporting substrate composed of silicon by physical vapor deposition. The silicon film is subjected to heat treatment at a temperature of 400° C. or higher and 600° C. or lower to generate an intermediate layer. The piezoelectric material substrate is bonded to the supporting substrate through a bonding layer of silicon oxide and the intermediate layer. A method of providing an acoustic wave element with a bonded body is also provided.
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: September 24, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yuji Hori, Takahiro Yamadera
  • Patent number: 12097638
    Abstract: An extrusion molding machine includes: a molding portion having one end and other end, the one end having a die, the other end being connected to an extrusion port of an extrusion portion, the molding portion also including a screen arranged therein. The molding portion includes: at least one first temperature controlling member between the screen and the die, the first temperature controlling member including a plurality of first zones divided in a circumferential direction. Temperatures of the plurality of first zones can be individually controlled.
    Type: Grant
    Filed: September 13, 2021
    Date of Patent: September 24, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Keita Ito, Yuichi Tajima, Yoshimasa Kondo
  • Publication number: 20240307838
    Abstract: A reactor includes a separation membrane, a non-permeation side flow path and a catalyst. The separation membrane is permeable to a product of a conversion reaction in which a raw material gas containing at least hydrogen and carbon oxide is converted to a liquid fuel. The non-permeation side flow path is provided on a non-permeation side of the separation membrane, the raw material gas flowing through the non-permeation side flow path. The catalyst is provided in the non-permeation side flow path and configured to promote the conversion reaction. The catalyst includes catalyst particles each constituted by a carrier and a supported catalytic component, and filler particles softer than the catalyst particles.
    Type: Application
    Filed: May 31, 2024
    Publication date: September 19, 2024
    Applicant: NGK INSULATORS, LTD.
    Inventors: Kosuke NAKAGAWA, Kazuki IIDA, Hirofumi KAN, Atsushi TORII
  • Publication number: 20240310125
    Abstract: A honeycomb structure for a heat exchanger includes: an inner peripheral wall; an outer peripheral wall; and partition walls disposed between the inner peripheral wall and the outer peripheral wall, the partition walls defining a plurality of cells each extending from a first end face to a second end face. In a cross section orthogonal to an extending direction of the cells, the partition walls include one or more first partition walls extending in a radial direction. The inner peripheral wall has an inner diameter of more than 50 mm and 75 mm or less, and the outer peripheral wall has an outer diameter of 60 to 100 mm. The honeycomb structure for a heat exchanger has an opening ratio of 0.15 or more.
    Type: Application
    Filed: February 20, 2024
    Publication date: September 19, 2024
    Applicant: NGK INSULATORS, LTD.
    Inventors: Yutaro FUMOTO, Takeshi SAKUMA
  • Publication number: 20240310124
    Abstract: A honeycomb structure includes: an inner peripheral wall; an outer peripheral wall; and partition walls disposed between the inner peripheral wall and the outer peripheral wall, the partition walls defining a plurality of cells each extending from a first end face to a second end face. In a cross section orthogonal to an extending direction of the cells, the partition walls include one or more first partition walls extending in a radial direction. The inner peripheral wall and the outer peripheral wall have an average thickness of 0.1 mm or more, and a thickness variation coefficient of 1.0 or less, represented by the following equation (1): the thickness variation coefficient=a standard deviation of the thicknesses of the inner peripheral wall and the outer peripheral wall/an average thickness of the inner peripheral wall and the outer peripheral wall??(1).
    Type: Application
    Filed: February 13, 2024
    Publication date: September 19, 2024
    Applicant: NGK INSULATORS, LTD.
    Inventors: Seiya SAWADA, Takeshi SAKUMA, Yutaro FUMOTO
  • Publication number: 20240302113
    Abstract: A heat recovery member includes: a metal pipe having a straight portion; and a honeycomb structure having an outer peripheral wall and a plurality of partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells each extending from a first end face to a second end face, the honeycomb structure being disposed in the straight portion of the metal pipe. The straight portion of the metal pipe is fixed by interference fitting to the outer peripheral wall parallel to an extending direction of the cells of the honeycomb structure.
    Type: Application
    Filed: February 6, 2024
    Publication date: September 12, 2024
    Applicant: NGK INSULATORS, LTD.
    Inventors: Makoto YOSHIHARA, Takeshi SAKUMA
  • Publication number: 20240306266
    Abstract: There is provided a ceramic heater including a ceramic plate embedded with a heater electrode; a ceramic shaft on a second surface of the ceramic plate; a shaft hole in a side wall constituting the ceramic shaft, to penetrate through the ceramic shaft; a gas groove in an arc shape on the second surface, and configured to form a gas passage communicating with the shaft hole; gas introduction holes provided in a vertical direction just above the gas groove to communicate therewith, and arranged apart from each other in a longitudinal direction of the gas groove; and lateral holes provided in a lateral direction from the gas introduction holes, and configured to reach a first surface of the ceramic plate. At least one of the gas introduction holes has a diameter different from those of the other gas introduction holes, to uniformize gas flow rates in the gas introduction holes.
    Type: Application
    Filed: March 11, 2024
    Publication date: September 12, 2024
    Applicant: NGK INSULATORS, LTD.
    Inventor: Reon TAKANOYA
  • Patent number: 12089297
    Abstract: A ceramic heater includes a ceramic plate incorporating an outer peripheral resistance heating element, and an outer peripheral thermocouple that measures the temperature of an outer peripheral zone by a temperature measurement portion provided at the tip of the outer peripheral thermocouple. The outer peripheral resistance heating element extends out from one of a pair of terminals provided at a center portion of the ceramic plate to the annular outer peripheral zone and reaches the other of the pair of terminals after disposed in the outer peripheral zone while turning back at a plurality of turn-back portions. The temperature measurement portion is disposed at a location in the outer peripheral zone excluding parts where the turn-back portions of the outer peripheral resistance heating element face each other.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: September 10, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Tomohiro Takahashi, Noboru Kajihara
  • Patent number: 12087613
    Abstract: A wafer placement table is a ceramic sintered body with a surface provided with multiple projections that support a wafer. Of the surface of the ceramic sintered body, the area provided with no projection is a mirror surface which has a surface roughness Ra of 0.1 ?m or less. The projections are formed of an aerosol deposition film or a thermal spray film made of the same material as for the ceramic sintered body.
    Type: Grant
    Filed: December 10, 2021
    Date of Patent: September 10, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Hiroshi Takebayashi, Kenichiro Aikawa, Tatsuya Kuno
  • Patent number: 12087609
    Abstract: A wafer placement table includes a ceramic substrate that has a wafer placement surface, a first electrode that is embedded in the ceramic substrate, a first power supply terminal that is inserted from a surface of the ceramic substrate opposite the wafer placement surface toward the first electrode, a first joint that joins the first electrode and the first power supply terminal to each other and a second electrode that is disposed between the wafer placement surface and the first electrode in the ceramic substrate. A linear portion that extends in the ceramic substrate from a position on the first electrode opposite the first joint to the wafer placement surface is composed of material of the ceramic substrate.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: September 10, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Tatsuya Kuno, Takumi Wakisaka
  • Patent number: 12087600
    Abstract: A thermocouple guide includes a straight tube portion and a curved tube portion formed in continuation with the straight tube portion to turn an extension direction from the straight tube portion. A cross-section of a tip-side part of the curved tube portion, the tip-side part occupying a predetermined range including a tip end of the curved tube portion, has an external shape that is obtained by linearly cutting both sides of a circle.
    Type: Grant
    Filed: June 2, 2021
    Date of Patent: September 10, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventor: Ryohei Matsushita
  • Patent number: 12087610
    Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface including a wafer placement surface and that contains an electrode; a plug insertion hole that is formed as at least a portion of a through-hole extending through the ceramic plate in an up-down direction, an internal thread portion being on an inner circumferential surface around the plug insertion hole; and an insulating plug that includes an external thread portion screwed on the internal thread portion on an outer circumferential surface and that allows gas to pass therethrough.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: September 10, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Tatsuya Kuno, Seiya Inoue
  • Publication number: 20240297358
    Abstract: A reuse support system performs an electrode degradation judgment to judge, based on one or a plurality of kinds of first data diagnosed regarding a ceramic electrode removed from a lithium-ion secondary battery having the ceramic electrode, whether or not a degradation degree of the removed ceramic electrode satisfies a condition for enabling regeneration of the ceramic electrode.
    Type: Application
    Filed: May 14, 2024
    Publication date: September 5, 2024
    Applicant: NGK INSULATORS, LTD.
    Inventors: Nobuyuki KOBAYASHI, Eiji NAKASHIMA, Daisuke IIDA, Yuki TANAKA
  • Publication number: 20240297062
    Abstract: A wafer placement table includes a ceramic plate having a wafer placement surface on its top surface and incorporating an electrode; an electrically conductive plate joined to a bottom surface of the ceramic plate; a ceramic plate penetrating part extending through the ceramic plate; an electrically insulating gas passage plug provided in the ceramic plate penetrating part and that allows gas to pass inside; a gas introduction passage provided at least inside the electrically conductive plate and communicating with the ceramic plate penetrating part; and an electrically conductive gas passage part provided in the gas introduction passage, being in contact with a bottom surface of the electrically insulating gas passage plug, being electrically continuous with the electrically conductive plate, and that allows gas to pass inside.
    Type: Application
    Filed: February 21, 2024
    Publication date: September 5, 2024
    Applicant: NGK INSULATORS, LTD.
    Inventors: Seiya INOUE, Tatsuya KUNO, Masaki ISHIKAWA, Taro USAMI, Ren NAKAMURA, Natsuki HIRATA, Kenji YONEMOTO
  • Patent number: 12080551
    Abstract: A SiC composite substrate includes a SiC single crystal layer and at least one biaxially oriented SiC layer. The at least one biaxially oriented SiC layer is disposed on the SiC single crystal. In the biaxially oriented SiC layer, the SiC is oriented in both a c-axis direction and an a-axis direction. The biaxially oriented SiC layer has pores and has a density of defect reaching the surface of 1.0×101/cm2 or less.
    Type: Grant
    Filed: June 11, 2021
    Date of Patent: September 3, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Risa Miyakaze, Kiyoshi Matsushima, Jun Yoshikawa, Morimichi Watanabe
  • Patent number: 12080868
    Abstract: Provided is an air electrode/separator assembly including a hydroxide ion conductive dense separator and an air electrode layer provided on one side of the hydroxide ion conductive dense separator. The air electrode layer includes: an internal catalyst layer provided closer to the hydroxide ion conductive dense separator and filled with a mixture containing a hydroxide ion conductive material, an electron conductive material, an organic polymer, and an air electrode catalyst (provided that the hydroxide ion conductive material may be the same material as the air electrode catalyst, and provided that the electron conductive material may be the same material as the air electrode catalyst); and an outermost catalyst layer provided away from the hydroxide ion conductive dense separator having a porosity of 60% or more, composed of a porous current collector and a layered double hydroxide (LDH) covering a surface thereof.
    Type: Grant
    Filed: October 29, 2021
    Date of Patent: September 3, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Naomi Hashimoto, Ozora Kano, Naomi Saito
  • Patent number: 12078092
    Abstract: A catalyst support for induction heating includes: a honeycomb structure including a pillar shaped honeycomb structure portion having: an outer peripheral wall; and a partition wall disposed on an inner side of the outer peripheral wall, the partition wall defining a plurality of cells, each of the cells extending from an end face on an inlet side to an end face on an outlet side in a gas flow direction to form a flow path; a catalyst supported onto an interior of the partition wall; and at least one magnetic body provided within the honeycomb structure, wherein the catalyst support has a region A where the catalyst is not supported, at least on the end face side of the catalyst support on the inlet side in the gas flow direction, and wherein the magnetic body is arranged at least in the region A in the gas flow direction.
    Type: Grant
    Filed: February 14, 2023
    Date of Patent: September 3, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yukio Miyairi, Masaaki Masuda, Shuichi Ichikawa, Takuya Ishihara, Kai Matsumoto, Norihisa Fujie, Yoichi Aoki
  • Patent number: 12076716
    Abstract: A honeycomb filter includes: a honeycomb structure having porous partition walls disposed so as to surround cells, and plugging portions disposed at any one of ends on the inflow end face and the ends on the outflow end face, of cells. In a cross section perpendicular to an extending direction of the cells, a thickness T1 of the partition walls in a central portion including a center of gravity O of the cross section is 0.17 to 0.32 mm, a thickness T2 of the partition walls in an outer peripheral portion is 70 to 90% of the thickness T1, and the outer peripheral portion extends from an outer peripheral edge of the cross section of honeycomb structure by 6 to 12% of a radius r which is from the center of gravity O of the cross section to the outer peripheral edge.
    Type: Grant
    Filed: February 24, 2023
    Date of Patent: September 3, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Fumihiko Yoshioka, Yudai Kurimoto