Patents Assigned to NGK Insulators
  • HONEYCOMB STRUCTURE, ELECTRICALLY HEATING SUPPORT, AND EXHAUST GAS PURIFICATION DEVICE
    Publication number: 20230249170
    Abstract: A honeycomb structure includes: a honeycomb structure portion comprising: an outer peripheral wall; a partition wall; and at least one slit cut radially inward from the outer peripheral wall. The outer peripheral wall and the partition contain SiC and Si. The at least one slit is filled with a filling material. At least one of two regions sandwiched between the pair of electrode layers on the outer surface of the outer peripheral wall has an information recognition portion for displaying information, and the information recognition portion has an area of a color tone range of 0.36?x?0.38, 0.38?y?0.41, 14?Y?100 of 250 mm2 or more in a CIExyY color space as defined in JIS Z 8781-3.
    Type: Application
    Filed: January 26, 2023
    Publication date: August 10, 2023
    Applicant: NGK Insulators, Ltd.
    Inventor: Ryosuke SAKAI
  • Heat exchanger
    Patent number: 11719489
    Abstract: A heat exchanger 100, including: an inner cylinder 10 through which a first fluid can flow, the inner cylinder 10 being configured to house a heat recovery member 30; and an outer cylinder 20 disposed so as to be spaced on a radially outer side of the inner cylinder 10 such that a second fluid can flow between the outer cylinder 20 and the inner cylinder 10. In the heat exchanger 100, at least a part of the outer cylinder 20 and/or the inner cylinder 10 has at least one continuous irregular structure 40.
    Type: Grant
    Filed: February 5, 2020
    Date of Patent: August 8, 2023
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yutaro Fumoto, Tatsuo Kawaguchi, Daisuke Kimura
  • Member for semiconductor manufacturing apparatus
    Patent number: 11715652
    Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic plate having an upper surface serving as a wafer mounting surface and incorporating an electrode, a ceramic dense plug disposed adjacent to a lower surface side of the ceramic plate and ceramic-bonded to the ceramic plate by a ring-shaped joint portion, a metal cooling plate joined to the lower surface of the ceramic plate in a portion other than the ring-shaped joint portion, and a gas flow channel. The gas flow channel includes a gas discharge hole that passes completely through the ceramic plate in the thickness direction of the ceramic plate and an internal gas flow channel that passes from the upper surface to the lower surface of the dense plug while winding through the dense plug. The gas flow channel passes inside of an inner periphery of the joint portion.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: August 1, 2023
    Assignee: NGK INSULATORS, LTD.
    Inventors: Masaki Ishikawa, Yuji Akatsuka
  • Composite sintered body and method of manufacturing composite sintered body
    Patent number: 11715661
    Abstract: A composite sintered body includes a base material (i.e., a main body) using ceramics as a main material and an electrode disposed inside the main body or on a surface thereof. The electrode contains WC and TiN. It is thereby possible to reduce the difference in thermal expansion coefficient between the electrode and the main body while suppressing an increase in the resistivity of the electrode. As a result, it is possible to suppress any damage such as a crack, a breakage, or the like of the main body, which is caused by the difference in the thermal expansion coefficient.
    Type: Grant
    Filed: October 14, 2020
    Date of Patent: August 1, 2023
    Assignee: NGK INSULATORS, LTD.
    Inventor: Kyohei Atsuji
  • CONTROL METHOD FOR REDUCTANT GENERATION DEVICE, EXHAUST PURIFICATION METHOD, REDUCTANT GENERATION SYSTEM, AND EXHAUST PURIFICATION SYSTEM
    Publication number: 20230235689
    Abstract: A method for controlling a reductant generation device 100, the reductant generation device 100 including: a sprayer 10 capable of spraying a reductant precursor 50; and a heater 20 comprising a ceramic substrate 21, the heater 20 being arranged on a downstream side of the sprayer 10 and capable of heating the reductant precursor 50 to generate a reductant 60. The method includes: a permeation step of spraying the reductant precursor 50 from the sprayer 10 and permeating the ceramic substrate 21 with the reductant precursor 50 when the heater is not heated; and after the permeation step, a heating step A of heating the reductant precursor 50 by the heater 20 and generating the reductant 60 while spraying the reductant precursor 50 from the sprayer 10.
    Type: Application
    Filed: March 28, 2023
    Publication date: July 27, 2023
    Applicant: NGK INSULATORS, LTD.
    Inventors: Katsumi SAIKI, Yukinari SHIBAGAKI
  • WAFER PLACEMENT TABLE, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, USING THE SAME
    Publication number: 20230238258
    Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface and incorporating an electrode, a cooling base provided on a bottom surface side of the ceramic base, and a refrigerant flow channel groove provided in the cooling base so as to open at a bottom surface of the cooling base.
    Type: Application
    Filed: September 1, 2022
    Publication date: July 27, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Seiya INOUE, Tatsuya KUNO
  • MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
    Publication number: 20230238224
    Abstract: A member for semiconductor manufacturing apparatus has a ceramic plate, a porous plug, an insulating lid, and pores. The ceramic plate has a wafer placement surface as an upper surface. The porous plug is disposed in a plug insertion hole penetrating the ceramic plate in an up-down direction, and allows a gas to flow. The insulating lid is provided in contact with an upper surface of the porous plug, and exposed to the wafer placement surface. A plurality of pores are provided in the insulating lid, and penetrate the insulating lid in an up-down direction.
    Type: Application
    Filed: November 18, 2022
    Publication date: July 27, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Seiya INOUE, Tatsuya KUNO, Shinya YOSHIDA, Tomoki NAGAE, Yusuke OGISO, Takuya YOTO
  • Infrared light radiation device
    Patent number: 11710628
    Abstract: An infrared light radiation device includes a radiation unit and a condenser. The radiation unit includes a heater and a metamaterial structure. The metamaterial structure is able to radiate, when heat energy is input from the heater, infrared light having a peak wavelength of a non-Planck distribution. The condenser includes at least one condensing lens that concentrates and transmits toward outside the infrared light radiated from the radiation unit.
    Type: Grant
    Filed: September 20, 2019
    Date of Patent: July 25, 2023
    Assignee: NGK INSULATORS, LTD.
    Inventors: Daiki Kato, Yoshio Kondo
  • LDH-LIKE COMPOUND SEPARATOR AND ZINC SECONDARY BATTERY
    Publication number: 20230231154
    Abstract: Provided is an LDH-like compound separator including a porous substrate made of a polymeric material; and a layered double hydroxide (LDH)-like compound with which pores of the porous substrate are plugged. A central region along the thickness of the LDH-like compound separator has a lower mean porosity than peripheral regions along the thickness of the LDH-like compound separator.
    Type: Application
    Filed: March 8, 2023
    Publication date: July 20, 2023
    Applicant: NGK INSULATORS, LTD.
    Inventors: Sota OKOCHI, Shohei YOKOYAMA, Sho YAMAMOTO, Naoko INUKAI
  • LDH-LIKE COMPOUND SEPARATOR AND SECONDARY ZINC BATTERY
    Publication number: 20230231153
    Abstract: Provided is an LDH-like compound separator including a porous substrate made of a polymeric material and an LDH-like compound plugging pores in the porous substrate. The LDH-like compound separator has a plurality of remaining flattened pores, longitudinal directions of the pores being non-parallel to a thickness direction of the LDH-like compound separator.
    Type: Application
    Filed: March 8, 2023
    Publication date: July 20, 2023
    Applicant: NGK INSULATORS, LTD.
    Inventors: Sota OKOCHI, Shohei YOKOYAMA, Sho YAMAMOTO, Naoko INUKAI
  • MULTILAYER STRUCTURE
    Publication number: 20230231013
    Abstract: A multilayer structure of the present invention is a multilayer structure including a base substrate and a semiconductor film that is made of ?-Ga2O3 or an ?-Ga2O3-based solid solution and has a corundum crystal structure, the semiconductor film being disposed on the base substrate. The semiconductor film has an average film thickness of greater than or equal to 10 ?m. The semiconductor film is convexly or concavely warped. An amount of warpage of the semiconductor film is 20 ?m or greater and 64 ?m or less.
    Type: Application
    Filed: March 10, 2023
    Publication date: July 20, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Hiroshi FUKUI, Morimichi WATANABE, Jun YOSHIKAWA
  • MEMBRANE REACTOR
    Publication number: 20230220283
    Abstract: A membrane reactor includes a catalyst layer, a separation membrane, and a buffer layer. The catalyst layer contains a catalyst for promoting a conversion reaction from a feed gas containing hydrogen and carbon oxide to a liquid fuel. The separation membrane is permeable to water vapor which is a byproduct of the conversion reaction. The buffer layer is disposed between the separation membrane and the catalyst layer, and permeable to the water vapor toward the separation membrane.
    Type: Application
    Filed: February 27, 2023
    Publication date: July 13, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Hirofumi KAN, Atsushi TORII, Kazuki IIDA
  • MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
    Publication number: 20230223291
    Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface including a wafer placement surface and resin porous plugs that have upper surfaces that are exposed from the wafer placement surface. The resin porous plugs are press-fitted and secured in plug insertion holes that extend through the ceramic plate in an up-down direction and allow gas to flow.
    Type: Application
    Filed: October 24, 2022
    Publication date: July 13, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Seiya INOUE, Tatsuya KUNO, Natsuki HIRATA
  • WAFER PLACEMENT TABLE
    Publication number: 20230223245
    Abstract: A wafer placement table includes a ceramic base, an electrode (FR attraction electrode), a bonding terminal (power supply terminal), and an electrode lead-out portion. The ceramic base has an upper surface serving as a wafer placement surface. The FR attraction electrode is embedded in the ceramic base. The power supply terminal is inserted into the ceramic base from a lower surface of the ceramic base and penetrates a through-hole formed in the FR attraction electrode. The electrode lead-out portion is provided at each of two or more positions at intervals along a peripheral edge of the through-hole to be thicker than the FR attraction electrode and has an inner peripheral surface bonded to a side surface of the power supply terminal.
    Type: Application
    Filed: November 17, 2022
    Publication date: July 13, 2023
    Applicant: NGK Insulators, Ltd.
    Inventors: Hiroshi TAKEBAYASHI, Mitsuru KOJIMA
  • Assembly of piezoelectric material substrate and support substrate, and method for manufacturing said assembly
    Patent number: 11700771
    Abstract: A bonded body includes a supporting substrate, silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalite. A nitrogen concentration at an interface between the piezoelectric material substrate and silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and the supporting substrate.
    Type: Grant
    Filed: March 30, 2020
    Date of Patent: July 11, 2023
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yuji Hori, Takahiro Yamadera, Tatsuro Takagaki
  • EUV TRANSMISSIVE MEMBRANE
    Publication number: 20230213848
    Abstract: Provided is an EUV transmissive membrane including a main layer composed of metallic beryllium and a protective layer composed of beryllium nitride that covers at least one side of the main layer.
    Type: Application
    Filed: February 24, 2023
    Publication date: July 6, 2023
    Applicant: NGK INSULATORS, LTD.
    Inventors: Toshikatsu KASHIWAYA, Atsuo KONDO, Hiroki CHAEN, Takashi TANIMURA
  • Ceramic porous body and method for producing the same, and dust collecting filter
    Patent number: 11691137
    Abstract: A ceramic porous body including: skeleton portions including an aggregate and at least one bonding material; and pore portions formed between the skeleton portions, the pore portions being capable of allowing a fluid to flow therethrough, wherein the pore portions have a pore volume ratio of pores having a pore diameter of from 10 to 15 ?m, of from 4 to 17%.
    Type: Grant
    Filed: March 25, 2020
    Date of Patent: July 4, 2023
    Assignee: NGK INSULATORS, LTD.
    Inventors: Suguru Kodama, Taira Hayakawa
  • Alloy member, cell stack, and cell stack device
    Patent number: 11695126
    Abstract: An alloy member includes a base member that includes a recess in a surface of the base member and is constituted by an alloy material containing chromium, an anchor portion is disposed in the recess and contains an oxide containing manganese and a covering layer is connected to the anchor portion and contains a low-equilibrium oxygen pressure element whose equilibrium oxygen pressure is lower than that of chromium.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: July 4, 2023
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yuta Matsuno, Yuki Tanaka, Toshiyuki Nakamura, Makoto Ohmori
  • Sensor element and gas sensor
    Patent number: 11692986
    Abstract: A sensor element includes element main body including side surfaces, a detection unit, connector electrodes disposed on the rear end-side part of the side surfaces, a porous layer that covers at least front end-side part of the side surface, the porous layer having a porosity of 10% or more, and a water-penetration reduction portion. The water-penetration reduction portion is disposed on the side surface so as to divide the porous layer or to be located closer to the rear end than the porous layer. The length L of the water-penetration reduction portion is 0.5 mm or more. The water-penetration reduction portion includes, among a dense layer covering the side surface and having a porosity of less than 10% and a gap region in which the porous layer is absent, at least the dense layer. The water-penetration reduction portion reduces the capillarity of water.
    Type: Grant
    Filed: May 27, 2022
    Date of Patent: July 4, 2023
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yuki Nakayama, Shota Kageyama, Yusuke Fujii, Kei Kosaka
  • Catalyst carrier for exhaust gas purification
    Patent number: D992111
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: July 11, 2023
    Assignee: NGK INSULATORS, LTD.
    Inventor: Yoichi Aoki