Abstract: Provided is a carbon material having a large specific surface area and good filling properties. The carbon material has a circularity of more than 0.83 and a specific surface area of not less than 400 m2/g. The carbon material is produced by a production method includes: providing a suspension containing first carbon particles having a specific surface area of not less than 50 m2/g, a water-soluble binder, and water; obtaining granular bodies from the suspension; and subjecting the granular bodies to heat treatment to obtain second carbon particles.

Abstract: A manufacturing method of an embodiment includes: providing a semiconductor growth substrate including a semiconductor layer including a light-emitting layer on a first substrate; forming a first insulating film on a second substrate that includes a circuit that includes a circuit element and a first wiring layer; forming a plug in the first insulating film to be connected with the circuit element; bonding the semiconductor layer to the second substrate and electrically connecting the plug to the semiconductor layer; forming a light-emitting element electrically connected to the plug by patterning the semiconductor layer; forming a second insulating film that covers the light-emitting element and the first insulating film; exposing a portion of the light-emitting element by removing a portion of the second insulating film; and forming a second wiring layer on the second insulating film.

Abstract: A light emitting device includes a light emitting element, a light-transmissive member, a bonding member and a light-reflective member. The bonding member is disposed between the light emitting element and the light-transmissive member, with the bonding member covering an upper surface of the light emitting element and at least a part of a lateral surface of the light emitting element. The light-reflective member covers the bonding member and a lateral surface of the light-transmissive member. The bonding member includes a surface that is flush with the lateral surface of the light-transmissive member, and an inclined surface that is inclined so as to extend toward the light-transmissive member.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: A soundproof member includes: a first elastic porous body layer; a first film layer; a second elastic porous body layer; and a second film layer, the layers arranged in the stated order from a sound source (S) side, wherein the first and second elastic porous body layer each have: a thickness of 0.5 mm or more and 10 mm or less; a bulk density of 45 kg/m3 or more and 550 kg/m3 or less; and a Young's modulus of 7,000 Pa or more and 28,000 Pa or less, and wherein a total (L1/?1+L2/?2) of a ratio (L1/?1) of the thickness L1 (mm) of the first elastic porous body layer to a viscous characteristic length ?1 (?m) thereof and a ratio (L2/?2) of the thickness L2 (mm) of the second elastic porous body layer (20) to a viscous characteristic length ?2 (?m) thereof is 0.11 or more.

Abstract: A method for producing a positive electrode active material for a non-aqueous electrolyte secondary battery, the method comprising: preparing first particles each comprising a lithium transition metal composite oxide containing lithium and nickel and having a layered structure; contacting the first particles with a cobalt compound to obtain a cobalt adhering material; heat-treating the cobalt adhering material at a temperature in a range of 500° C. to 900° C. to obtain second particles; contacting the second particles with a liquid medium to obtain a liquid medium processed material; and contacting the liquid medium processed material with a boron compound to obtain a boron adhering material.

Abstract: A light emitting device includes: a substrate; a package having an upward-facing surface and an inward-facing surface that define a recess; a light emitting element mounted on the upward-facing surface of the package; a first cover member including: a light transmitting layer that contacts at least a portion of a lateral surface of the light emitting element, the light transmitting layer having an upper surface that is inclined from the lateral surface of the light emitting element towards the upward-facing surface of the package, and a reflecting material-containing layer located below the light-transmitting layer; and a second cover member that contacts the inward-facing surface of the package and is separated from the light emitting element.

Abstract: A method that includes providing a substrate having first and second regions for forming first and second light emitting devices, respectively, that are axisymmetrical in plan view with respect to a boundary line extending between the regions. The method includes mounting first and second light emitting elements in the first and second regions, respectively, arranging first and second light transmissive members respectively thereon, and arranging a covering member to collectively cover at least a portion of the first and second light emitting devices. The first and second devices have external connection terminals that are exposed. The terminals of the first light emitting device are on a side of the first light emitting device opposite to a side thereof adjacent the boundary line, and the terminals of the second light emitting device are on a side thereof opposite to a side of the second light emitting device adjacent the boundary line.

Abstract: Provided is a positive electrode active material for a non-aqueous electrolyte secondary battery, the active material including a lithium-transition metal composite oxide containing lithium, nickel, cobalt, and manganese, having a layered structure, having a ratio D50/DSEM of from 1 to 4, and having a ratio of a number of moles of nickel to a total number of moles of metals other than lithium of greater than 0.8 and less than 1, a ratio of a number of moles of cobalt to the total number of moles of metals other than lithium of less than 0.2, a ratio of a number of moles of manganese to the total number of moles of metals other than lithium of less than 0.2, and a ratio of the number of moles of manganese to a sum of the number of moles of cobalt and the number of moles of manganese of less than 0.58.

Abstract: A light emitting device includes: a substrate; a light emitting element disposed on the substrate; a first wavelength conversion member disposed on the light emitting element and having a lower surface bonded to the light emitting element, an upper surface opposite the lower surface, and a lateral surface that meets the upper surface; a first light reflecting member disposed on an upper surface of the substrate and covering lateral surfaces of the light emitting element; and a second wavelength conversion member disposed on the first light reflecting member, on the upper surface of the substrate, and on the lateral surface of the first wavelength conversion member without covering the upper surface of the first wavelength conversion member.

Abstract: A light emitting device includes three or more light emitting elements, and a package that includes a base having a mounting face on which the three or more light emitting elements are disposed and a lateral wall part disposed around the light emitting elements and having a light transmitting incident face. The three or more light emitting elements include a first light emitting element that emits first light having an emission peak at a first wavelength along a first optical axis, a second light emitting element that emits second light having an emission peak at a second wavelength along a second optical axis, and a third light emitting element that emits third light having an emission peak at a third wavelength along a third optical axis. An angle formed by the first optical axis and the second optical axis in a top view is 3° to 45°.

Abstract: A method for producing a sintered body includes: providing a raw material mixture containing oxide particles containing Ce, Al, Ga, optionally Sc, and a rare earth element R1 being at least one selected from the group consisting of Y, La, Gd, and Tb to obtain a target composition, wherein a total molar ratio of R1 and Ce is 3, and a molar ratio of Ce, a total molar ratio of Al, Ga, and Sc, a molar ratio of Al and a molar ratio of the Ga are as described in the disclosure; molding the raw material mixture to obtain a molded body; and calcining the molded body to obtain a sintered body containing a rare earth aluminate crystal phase and 2.7% by volume or more to 57.0% by volume or less of an aluminum oxide phase.

Abstract: A light-emitting device includes: a first light-emitting element and a second light-emitting element, each configured to be independently driven; a wall portion located between the first light-emitting element and the second light-emitting element; a first light-transmissive member separated from the second light-emitting element by the wall portion and covering at least a portion of lateral surfaces of the first light-emitting element, wherein the first light-transmissive member contains a first wavelength converting member; and a second light-transmissive member covering the first light-emitting element, the second light-emitting element, and the first light-transmissive member in a plan view, wherein the second light-transmissive member contains a second wavelength converting member. A peak emission wavelength of the first wavelength converting member is longer than a peak emission wavelength of the second wavelength converting member.

Abstract: A integrated light-emitting device includes: a base including a conductive wiring; a plurality of light-emitting devices mounted on the base and configured to emit a first light, each of the light-emitting devices comprising a light-emitting element and a encapsulant covering the light-emitting element; a light reflective film provided on an upper surface of the light-emitting element; and a plurality of light reflective members disposed between adjacent ones of the light-emitting devices. A ratio (H/W) of a height (H) of the encapsulant to a width (W) of a bottom surface of the encapsulant is less than 0.5. Each of the light-emitting devices has a batwing light distribution characteristics.

Abstract: Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN3; and performing a heat treatment of the mixture at a temperature of 1,300° C. to 1,900° C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.

Abstract: Provided are a light-emitting device, a lighting appliance, and a lighting fixture that emit light that tends to promote melatonin secretion. The light-emitting device, the lighting appliance, and the lighting fixture include a light-emitting element having an emission peak wavelength in a range of 400 nm to 490 nm and a first phosphor having an emission peak wavelength in a range of 570 nm to 680 nm. The emitted light has a correlated color temperature that is 1950 K or less, an average color rendering index Ra that is 40 or greater, a full width at half maximum of an emission spectrum indicating a maximum emission intensity in an emission spectrum of the light-emitting device that is 110 nm or less, and a melanopic ratio MR derived from Equation (1) that is 0.233 or less.

Abstract: Provided is a red light emitting phosphor having a high luminance. The fluoride phosphor has a first composition which includes an alkali metal containing K, Si, Al, Mn, and F. In the first composition, when a total number of moles of the alkali metal is 2: a total number of moles of Si, Al, and Mn is 0.9 to or more and 1.1 or less; a number of moles of Al is more than 0 but and 0.1 or less; a number of moles of Mn is more than 0 but and 0.2 or less; and the a number of moles of F is 5.9 to 6.1. The fluoride phosphor has a crystal structure of cubic system, and a lattice constant of not less than 0.8138 nm.

Abstract: A method for manufacturing a light-emitting element, includes: introducing a gas comprising gallium, an ammonia gas, and a gas comprising a p-type impurity to a reactor and forming a first p-type nitride semiconductor layer on a first light-emitting layer in a state in which the reactor has been heated to a first temperature; introducing an ammonia gas at a first flow rate and a nitrogen gas to the reactor in a state in which the reactor is held at the first temperature; and subsequently introducing a gas comprising gallium, an ammonia gas at a second flow rate, and a gas comprising an n-type impurity to the reactor, and forming a second n-type nitride semiconductor layer on the first p-type nitride semiconductor layer. The first flow rate is less than the second flow rate.

Abstract: A light-emitting element includes: a semiconductor stack having a triangular shape in a top plan view, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and seconds semiconductor layers; a first electrode located on the first semiconductor layer and including a first connecting portion and a first extension extending from the first connecting portion; and a second electrode located on the second semiconductor layer and including a second connecting portion and a second extension extending from the second connecting portion. The first extension includes a first portion extending from the first connecting portion toward the second connecting portion. The second extension includes a second portion including a portion extending along a first side, a third portion including a portion extending along a second side, and fourth and fifth portions each including a portion extending along a third side.

Abstract: A light emitting element includes: a semiconductor structure; first and second electrodes formed above the semiconductor structure; and a protective film. In a plan view: the first electrode has a first connecting portion, a first extending portion, and two second extending portions, the second electrode has a second connecting portion, and two third extending portions, the first extending portion extends linearly in a direction from the first connecting portion toward the second connecting portion, the two second extending portions are located on opposite sides of the first extending portion, respectively, with each of the second extending portions having two bent portions and a linear portion extending parallel to the first extending portion and located between the two bent portions, and the two third extending portions are located between the first extending portion and the two second extending portions, respectively.