Abstract: A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.

Abstract: A light source device includes: a combined body including light emitting portions including: a first light emitting portion including a first light emitting element, and a second light emitting portion provided separately from and along an outer periphery of the first light emitting portion in a plan view, the second light emitting portion including a plurality of second light emitting elements; and a lens disposed above the combined body. The first light emitting element and the plurality of second light emitting elements are arrayed in first and second directions that are perpendicular to each other. The first light emitting element and the plurality of second light emitting elements are controllable to be lit independently.

Abstract: A light-emitting device includes: a plurality of light-emitting elements arranged in an array on a base member; and a lens that comprises at least four Fresnel lenses disposed above the base member and facing the plurality of light-emitting elements. In a top plan view, a center of each of the plurality of light-emitting elements is offset from a lens center of the corresponding one of the Fresnel lenses of the lens in a direction toward a center of the lens. The plurality of light-emitting elements include at least two first light-emitting elements and at least two second light-emitting elements, wherein an emission color of the first light-emitting elements is different from an emission color of the second light-emitting elements.

Abstract: A light emitting device includes a substrate including first, second, third and fourth wiring portions on a top surface of a base member and arrayed in a first direction, and a connection wiring portion connecting the second and third wiring portions. The connection wiring portion includes first and second connection ends respectively connected with the second and third wiring portions, and a connection central portion connecting the first and second connection ends and having a maximum width in a second direction different from each of a maximum width of the first connection end and a maximum width of the second connection end. In the second direction, at least a part of the connection wiring portion has a width narrower than each of a maximum width of the second wiring portion and a maximum width of the third wiring portion.

Abstract: A semiconductor device includes: a package including: a heat dissipating body comprising a metal, an insulting part surrounding the heat dissipating body, one or more semiconductor laser elements disposed on the heat dissipating body, at least one outer metal layer that is located on a lower surface of the insulting part and is spaced from a lower surface of the heat dissipating body; a mounting substrate including: at least one first metal pattern located at an upper surface of the mounting substrate, and a second metal pattern located at the upper surface of the mounting substrate; at least one first bonding member located between the at least one outer metal layer and the first metal pattern; and a second bonding member located between the lower surface of the heat dissipating body and the second metal pattern, wherein the second bonding member comprises a metal material.

Abstract: A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element M on the nickel cobalt complex hydroxide particles.

Abstract: A method for manufacturing a semiconductor element includes preparing a semiconductor structure body that includes a p-side layer and an n-side layer; forming a first carbon film on the p-side layer by vapor deposition, the vapor deposition utilizing carbon ions generated by an arc discharge without introducing a gas to a discharge space, the discharge space being a vacuum; forming a second carbon film on the n-side layer by the vapor deposition; removing the first carbon film; and removing the second carbon film. A first bias voltage of the forming during the first carbon film on the p-side layer is higher than a second bias voltage of the forming during the second carbon film on the n-side layer.

Abstract: A cap has a cavity for accommodating a light-emitting element and includes a front wall defining a front surface of the cavity and made of a material that transmits light emitted from the light-emitting element; a rear wall defining a rear surface of the cavity and located opposite to the front wall; and a main body defining an upper surface and a lateral surface of the cavity and joined with the front wall and the rear wall. A lower end surface of each of the front wall, the rear wall, and the main body defines a bonding surface of the cap, and the main body includes a plurality of portions layered between the rear wall and the front wall.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: A display driving circuit drives a display unit including a plurality of light-emitting elements connected along respective common lines and arranged in a matrix. The driving circuit includes one or more element drivers for driving the plurality of light-emitting elements of the display unit, a memory that stores lighting period information indicating a lighting period in which each light-emitting element is lit by the one or more element drivers, an element lighting period controller that outputs the lighting period information stored in the memory to each element driver, a switching unit that selects each common line based on the lighting period information stored in the memory, and a common line lighting period controller that is interposed between the memory and the switching unit and controls a lighting period in which each common line is activated according to the lighting period information.

Abstract: A method of manufacturing a light emitting device includes providing an intermediate body having a light emitting element, a bottom part on which the light emitting element is disposed, and a first wall disposed on the bottom part and surrounding the light emitting element apart from a lateral face of the light emitting element. The method further includes disposing a light transmissive member having a height in excess of the height of the first wall and covering the upper face of the first wall and the light emitting element, forming a first groove by removing a portion of the light transmissive member thereby exposing at least a portion of the upper face of the first wall, forming a second wall by disposing a first resin in the first groove, and cutting the second wall along a lengthwise direction of the first groove thereby obtaining the light emitting device.

Abstract: A light emitting device includes: a base; a first terminal and a second terminal located at a surface of the base; a light emitting element array chip mounted on the base, the light emitting element array chip including: a support substrate, a plurality of first wirings and a plurality of second wirings disposed on the support substrate, and a plurality of light emitting elements, each of the light emitting elements arranged on the first wiring and the second wiring and electrically connected to the first wiring and the second wiring; and a plurality of wires including a first wire connecting the first wiring to the first terminal, and a second wire connecting the second wiring to the second terminal.

Abstract: A light-emitting module including a substrate, a light-emitting device disposed on the substrate, a lens, and an optical sensor. The light-emitting device includes at least one light-emitting element and a light-transmissive member disposed on a light extraction surface of the at least one light-emitting element. The lens is disposed apart from the light-emitting device at a position where the lens faces the light-emitting device. The optical sensor has an upper surface including a light-receiving surface to receive light through the lens and is disposed on the substrate at a position where at least a part of the light-receiving surface faces the lens. A center of the light-emitting device is located at a center of the lens in a plan view.

Abstract: A method for manufacturing a wavelength conversion member, includes: providing a wavelength conversion layer having a phosphor-containing portion and a light reflecting portion surrounding the phosphor-containing portion, and the wavelength conversion layer having an upper surface, a bottom surface and at least one side surface; forming a light-blocking film on the upper surface of the wavelength conversion layer; and removing a part of the light-blocking film by laser processing to expose at least a part of the phosphor-containing portion from the light-blocking film.

Abstract: A method of producing a positive electrode active material, the method includes: contacting first particles that contain a lithium transition metal composite oxide with a solution containing sodium ions to obtain second particles containing the lithium transition metal composite oxide and sodium element, wherein the lithium transition metal composite oxide has a layered structure and a composition ratio of a number of moles of nickel to a total number of moles of metals other than lithium in a range of from 0.7 to less than 1; mixing the second particles and a boron compound to obtain a mixture; and heat-treating the mixture at a temperature in a range of from 100° C. to 450° C.

Abstract: A method for manufacturing a light-emitting element includes: preparing a semiconductor structure body that includes: an n-side layer, a p-side layer, and an active layer positioned between the n-side layer and the p-side layer, where the n-side layer includes a plurality of first regions arranged in a first direction in a top view, the first regions exposed from the active layer and the p-side layer; forming a first insulating film on the p-side layer, between the first regions; forming a second insulating film to continuously cover the first regions, the p-side layer, and the first insulating film; forming an n-side opening in the second insulating film by removing the second insulating film on the first regions and on the first insulating film; and forming an n-side electrode in the n-side opening, the n-side electrode contacting the first regions and the first insulating film.

Abstract: A light emitting device includes: at least one semiconductor laser element; a base member on which the at least one semiconductor laser element is disposed; a light-transmissive member including: an upper surface, a lower surface, and a light-transmissive region through which laser light emitted from the at least one semiconductor laser element is transmitted from the lower surface to the upper surface; and a lens member through which the laser light emitted from the at least one semiconductor laser element, the lens member being fixed to the base member or the light-transmissive member. At least the light-transmissive region is made of sapphire. The light-transmissive member includes an incident surface on which the laser light is incident, the incident surface being an a-plane of the sapphire.

Abstract: A light-emitting device includes: a substrate having an upper surface; at least one light-emitting element on or above the substrate, the at least one light-emitting element having a rectangular shape in a plan view from above the light-emitting device and having an upper surface serving as a light-emitting surface of the at least one light-emitting element; a plate-shaped light-transmissive member having a rectangular shape in a plan view from above the light-emitting device and having a lower surface that faces the upper surface of the at least one light-emitting element; and a light-guiding member that is disposed between the light-emitting element and the light-transmissive member.

Abstract: A method for manufacturing a ceramic sintered body substrate includes of disposing a first metal paste on a surface of a ceramic substrate, and of firing the ceramic substrate on which the first metal paste is disposed. In the disposing the first metal paste, the first metal paste contains a plurality of first metal powders, a plurality of active metal powders, and a plurality of inorganic fillers excluding metals, and in the firing the ceramic substrate, a firing temperature is equal to or higher than a melting point of the first metal powders.

Abstract: The vehicle light-emitting device includes a light-emitting element having a peak emission wavelength of 400 nm or greater and 510 nm or less, and a fluorescent member including a first phosphor excited by light emitted by the light-emitting element and emitting light having a peak emission wavelength of 480 nm or greater and 530 nm or less a second phosphor excited by the light emitted by the light-emitting element and emitting light having a peak emission wavelength of 540 nm or greater and 600 nm or less. The vehicle light-emitting device emits light in a region AL in a CIE1931 chromaticity diagram as defined in the present disclosure.