Abstract: An image display device includes a plurality of driving circuits disposed on a substrate, and a plurality of light emitting elements corresponding to a plurality of pixels respectively. Each of the plurality of driving circuits being configured to provide a driving current to each of the plurality of light emitting elements and to control the driving current by a pulse amplitude modulation and a pulse width modulation. The driving circuit being configured using TFTs.

Abstract: Provided is a method for producing an electrode active material capable of forming a non-aqueous secondary battery with superior durability and output characteristics. The method for producing an electrode active material for a non-aqueous secondary battery includes contacting a dispersion containing graphene and a dispersion medium with alkali-metal-transition-metal composite oxide particles, and the dispersion has a dispersibility index of 0.25 or more.

Abstract: A light-emitting device includes a package having a recessed portion, a light-emitting element placed on a bottom surface of the recessed portion at a position away from an inner lateral surface of the recessed portion, and a light-reflective member disposed between the light-emitting element and the inner lateral surface so as to surround the light-emitting element at a position away from the light-emitting element and having a light reflecting surface configured to reflect light emitted from the light-emitting element. The light reflecting surface is inclined with respect to the bottom surface in a direction from the inner lateral surface toward the light-emitting element, and has different light reflection characteristics at different positions with different heights from the bottom surface to the light reflecting surface.

Abstract: A method of manufacturing a semiconductor element includes: providing a semiconductor stack including: a silicon substrate containing a first impurity of a first conductivity type that is one of p-type and n-type, at a first concentration, and a silicon semiconductor layer provided on the silicon substrate, the silicon semiconductor layer including: a first silicon semiconductor layer containing a second impurity of the first conductivity type at a second concentration that is lower than the first concentration, and a second silicon semiconductor layer containing a third impurity of a second conductivity type that is the other of p-type and n-type; and irradiating the silicon semiconductor layer with light having a predetermined peak wavelength in a presence of a forward current flowing through the silicon semiconductor layer such that the third impurity is diffused. The predetermined peak wavelength is longer than a wavelength corresponding to a magnitude of a bandgap of silicon.

Abstract: A method of manufacturing a semiconductor device includes: preparing a bottom plate having an upper surface and a lower surface, wherein the lower surface of the bottom plate comprises a reference part and one or more inclined surfaces that are inclined with respect to the reference part, an upper portion of the one or more inclined surfaces being positioned above the reference part, and wherein a thickness of the bottom plate at the reference part is greater than a thickness of the bottom plate at the upper portion of the one or more inclined surfaces; joining a frame member to the bottom plate, at least a part of the frame member being disposed directly above the one or more inclined surfaces, a linear expansion coefficient of the frame member being smaller than a linear expansion coefficient of the bottom plate; and fixing a semiconductor element to the bottom plate.

Abstract: A method of producing a positive electrode active material for a nonaqueous electrolyte secondary battery, the method includes preparing nickel-containing composite oxide particles having a ratio 1D90/1D10 of a 90% particle size 1D90 to a 10% particle size 1D10 in volume-based cumulative particle size distribution is 3 or less; mixing the composite oxide particles and a lithium compound to obtain a first mixture; subjecting the first mixture to a first heat treatment at a first temperature and a second heat treatment at a second temperature higher than the first temperature to obtain a first heat-treated product; and subjecting the first heat-treated material to a dispersion treatment.

Abstract: A method of manufacturing a light emitting device includes: a resin layer disposition step including disposing, on a support, a resin layer in an A-stage state; a light emitting element mounting step including mounting a light emitting element on the resin layer such that a first surface faces an upper surface of the resin layer; a load application step including applying a load to the light emitting element so as to embed the semiconductor stack structure at least partly in the resin layer while a second surface of the light emitting element is exposed from the resin layer; a first heating step including heating the resin layer at a first temperature without applying the load, to lower a viscosity of the resin layer; and a second heating step including heating the resin layer at a second temperature higher than the first temperature to harden the resin layer.

Abstract: A light emitting device includes a light emitting element having an upper emission face, a lower face and a lateral face(s); a reflecting member having an upper face, a lower face and inner and outer lateral faces, wherein the inner lateral face(s) is disposed on the lateral face side of the light emitting element; a wavelength conversion member having an upper emission face, a lower face and a lateral face(s), wherein the lower face is disposed on the upper emission face of the light emitting element and on the upper face of reflecting member; and a cover member having inner and outer lateral faces, wherein the inner lateral face(s) completely covers the lateral face(s) of the wavelength conversion member. The cover member contains a reflecting substance and a coloring substance, and the body color of the wavelength conversion member and body color of the cover member are the same or similar in color.

Abstract: Provided is a light-emitting device, a lighting appliance, and a street light that emit light with minimal negative effects on the behavior of sea turtles and which makes irradiated objects easily visible to humans. The light-emitting device includes a light-emitting element having an emission peak wavelength within a range from 400 nm to 490 nm; and a first phosphor having an emission peak wavelength within a range from 570 nm to 680 nm, wherein the light-emitting device, lighting appliance, and street light emit light that has a correlated color temperature of 1950 K or less, an average color rendering index Ra of 40 or greater, a full width at half maximum of an emission spectrum indicating a maximum emission intensity in an emission spectrum of the light-emitting device of 110 nm or less, and a sea turtle light attraction index T derived from Equation (1) of 0.416 or less.

Abstract: A light emitting element includes a first light emitting portion and a second light emitting portion. The first light emitting portion includes a first stacked body having a first n-type layer, a first active layer, a first p-type layer, a first tunnel junction layer, and a second n-type layer. The second light emitting portion includes a second stacked body having a third n-type layer, a second p-type layer, a second tunnel junction layer, a fourth n-type layer, a second active layer, a third p-type layer, and a transmissive conductive film. A resistivity of the second n-type layer is higher than a resistivity of the transmissive conductive film. A thickness of the second n-type layer is larger than a thickness of the transmissive conductive film.

Abstract: A substrate module includes: a substrate having top and bottom surfaces and comprising, at the top surface, a plurality of first wiring regions and a plurality of second wiring regions that are electrically connected to the plurality of first wiring regions; one or more power receiving devices disposed on the plurality of first wiring regions; a first connection component disposed on the plurality of second wiring regions, wherein the first connection component has opposite ends in a first direction; and a protected component disposed on the top surface of the substrate. In a top plan view, (i) the protected component is located between two straight lines passing through the respective opposite ends of the first connection component and extending in a second direction perpendicular to the first direction, and (ii) the protected component is located between the one or more power receiving devices and the first connection component.

Abstract: A light-emitting device includes: a light-emitting element having an upper surface, a lower surface opposite to the upper surface, and lateral surfaces between the upper surface and the lower surface; a plurality of electrodes electrically connected to the light-emitting element and disposed on the lower surface of the light-emitting element; and a resin member covering the upper surface, the lower surface, and the lateral surfaces of the light-emitting element, the resin member having an upper surface, a lower surface opposite to the upper surface, and lateral surfaces between the upper surface and the lower surface. A portion of each of the electrodes is exposed at the lower surface of the resin member. A plurality of grooves are defined in the lower surface of the resin member, each of the grooves extending from a position apart from the electrode to an outer edge of the lower surface of the resin member.

Abstract: A light emitting device includes a flexible substrate, a light emitting element, a conductive connecting material and a first holding member. The flexible substrate includes a flexible base and a wire. The first holding member is arranged on an opposite side surface to a surface of a side of the substrate on which the light emitting element is mounted. The first holding member surrounds a region corresponding to a region on the substrate including the light emitting element and the conductive connecting material in a plan view. The first holding member is arranged adjacent to the wire. The first holding member includes an inner region arranged on an inner side of the first holding member, and having higher rigidity than rigidity of the flexible base, and an outer region arranged adjacent to the inner region outside the inner region, and having lower rigidity than rigidity of the inner region.

Abstract: Provided is a carbon material having a large specific surface area and good filling properties. The carbon material has a circularity of more than 0.83 and a specific surface area of not less than 400 m2/g. The carbon material is produced by a production method includes: providing a suspension containing first carbon particles having a specific surface area of not less than 50 m2/g, a water-soluble binder, and water; obtaining granular bodies from the suspension; and subjecting the granular bodies to heat treatment to obtain second carbon particles.

Abstract: A manufacturing method of an embodiment includes: providing a semiconductor growth substrate including a semiconductor layer including a light-emitting layer on a first substrate; forming a first insulating film on a second substrate that includes a circuit that includes a circuit element and a first wiring layer; forming a plug in the first insulating film to be connected with the circuit element; bonding the semiconductor layer to the second substrate and electrically connecting the plug to the semiconductor layer; forming a light-emitting element electrically connected to the plug by patterning the semiconductor layer; forming a second insulating film that covers the light-emitting element and the first insulating film; exposing a portion of the light-emitting element by removing a portion of the second insulating film; and forming a second wiring layer on the second insulating film.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: A light emitting device includes a light emitting element, a light-transmissive member, a bonding member and a light-reflective member. The bonding member is disposed between the light emitting element and the light-transmissive member, with the bonding member covering an upper surface of the light emitting element and at least a part of a lateral surface of the light emitting element. The light-reflective member covers the bonding member and a lateral surface of the light-transmissive member. The bonding member includes a surface that is flush with the lateral surface of the light-transmissive member, and an inclined surface that is inclined so as to extend toward the light-transmissive member.

Abstract: A soundproof member includes: a first elastic porous body layer; a first film layer; a second elastic porous body layer; and a second film layer, the layers arranged in the stated order from a sound source (S) side, wherein the first and second elastic porous body layer each have: a thickness of 0.5 mm or more and 10 mm or less; a bulk density of 45 kg/m3 or more and 550 kg/m3 or less; and a Young's modulus of 7,000 Pa or more and 28,000 Pa or less, and wherein a total (L1/?1+L2/?2) of a ratio (L1/?1) of the thickness L1 (mm) of the first elastic porous body layer to a viscous characteristic length ?1 (?m) thereof and a ratio (L2/?2) of the thickness L2 (mm) of the second elastic porous body layer (20) to a viscous characteristic length ?2 (?m) thereof is 0.11 or more.

Abstract: A method for producing a positive electrode active material for a non-aqueous electrolyte secondary battery, the method comprising: preparing first particles each comprising a lithium transition metal composite oxide containing lithium and nickel and having a layered structure; contacting the first particles with a cobalt compound to obtain a cobalt adhering material; heat-treating the cobalt adhering material at a temperature in a range of 500° C. to 900° C. to obtain second particles; contacting the second particles with a liquid medium to obtain a liquid medium processed material; and contacting the liquid medium processed material with a boron compound to obtain a boron adhering material.

Abstract: A method that includes providing a substrate having first and second regions for forming first and second light emitting devices, respectively, that are axisymmetrical in plan view with respect to a boundary line extending between the regions. The method includes mounting first and second light emitting elements in the first and second regions, respectively, arranging first and second light transmissive members respectively thereon, and arranging a covering member to collectively cover at least a portion of the first and second light emitting devices. The first and second devices have external connection terminals that are exposed. The terminals of the first light emitting device are on a side of the first light emitting device opposite to a side thereof adjacent the boundary line, and the terminals of the second light emitting device are on a side thereof opposite to a side of the second light emitting device adjacent the boundary line.