Abstract: A method of producing a positive-electrode active material for a non-aqueous electrolyte secondary battery is provided. The method includes obtaining a precipitate containing nickel and manganese from a solution containing nickel and manganese, heat-treating the resulting precipitate at a temperature of from 850° C. to less than 1100° C. to obtain a first heat-treated product, mixing the first heat-treated product and a lithium compound, and heat-treating the resulting lithium-containing mixture at a temperature of from 550° C. to 1000° C. to obtain a second heat-treated product. The second heat-treated product contains a group of lithium transition metal composite oxide particles having an average particle diameter DSEM of from 0.5 ?m to less than 3 ?m and D50/DSEM of 1 to 2.5. The lithium transition metal composite oxide particles have a spinel structure based on nickel and manganese.

Abstract: A method of manufacturing a circuit substrate includes forming, in an insulating substrate and circuit patterns that are provided on a first surface and a second surface of the insulating substrate, a through-hole penetrating the insulating substrate and the circuit patterns, where the circuit patterns contain Cu as a main component. The method includes filling, in the through-hole, an electrically conductive paste that is a melting-point shift electrically conductive paste including Sn—Bi solder powder, Cu powder, and resin, and forming a protrusion obtained by causing the electrically conductive paste to protrude from the through-hole. The method further includes performing pressure treatment on the protrusion near the through-hole; and performing heat treatment on the insulating substrate whose protrusion is subjected to the pressure treatment and causing the circuit patterns and the electrically conductive paste to be electrically connected with each other.

Abstract: The present invention relates to a composition for bonded magnets having good hot water resistance and a method of manufacturing the composition. The method of manufacturing a composition for bonded magnets includes: obtaining a first kneaded mixture by kneading a rare earth-iron-nitrogen-based magnetic powder and an acid-modified polypropylene resin; and obtaining a second kneaded mixture by kneading the first kneaded mixture with a polypropylene resin and an amorphous resin having a glass transition temperature of 120° C. or higher and 250° C. or lower, wherein, with respect to 100 parts by weight of the rare earth-iron-nitrogen-based magnetic powder, the amount of the acid-modified polypropylene resin is 3.5 parts by weight or greater and less than 10.4 parts by weight, and the total amount of the polypropylene resin and the amorphous resin is 0.35 part by weight or greater and less than 3.88 parts by weight.

Abstract: Provided are silicon-containing aluminum nitride particles having a high reflectance, a method for producing the same, and a light emitting device. In certain embodiment, silicon-containing aluminum nitride particles having a total amount of aluminum and nitrogen of 90% by mass or more, a content of silicon in a range of 1.5% by mass or more and 4.0% by mass or less, and a content of oxygen in a range of 0.5% by mass or more and 2.0% by mass or less, and having an average reflectance in a wavelength range of 380 nm or more and 730 nm or less of 85% or more.

Abstract: A method of manufacturing a wiring substrate includes providing a conductive paste including metal nanoparticles, metal particles, and a resin, disposing the conductive paste on at least a first surface of an insulating base body, and forming a wiring layer by heating and pressurizing the conductive paste by using a roll press or a hard SUS plate. In the providing the conductive paste, the ratio of a mass of the metal nanoparticles to the total mass of the metal nanoparticles and the metal particles is in a range of 5 mass % to 95 mass %, and the conductive paste is heated and pressurized such that part of the wiring layer in a thickness direction is embedded in at least the first surface of the insulating base body.

Abstract: A method for manufacturing a light-emitting device includes: preparing a first structure comprising: a first substrate having a first surface and a second surface on a side opposite the first surface, a release layer disposed on the first surface, and one or more light-emitting elements fixed to the first surface of the first substrate via the release layer, the one or more light-emitting elements each having a third surface facing the release layer and a fourth surface on a side opposite the third surface, the fourth surface being larger than the third surface in a plan view, wherein: the release layer encloses the fourth surface in the plan view; preparing a second structure comprising a second substrate having an upper surface; and transferring the one or more light-emitting elements from the first substrate to the second substrate by removing the release layer.

Abstract: A method for manufacturing an image display device includes: preparing a substrate, the substrate including a circuit and a first insulating film covering the circuit; forming a graphene-including layer on the first insulating film; forming a semiconductor layer on the graphene-including layer; forming a light-emitting element by etching the semiconductor layer, the light-emitting element including a bottom surface on the graphene-including layer, and a light-emitting surface at a side opposite to the bottom surface; forming a second insulating film covering the graphene-including layer, the light-emitting element, and the first insulating film; forming a first via extending through the first and second insulating films; and forming a wiring layer on the second insulating film. The first via is located between the wiring layer and the circuit and electrically connects the wiring layer and the circuit. The light-emitting element is electrically connected to the circuit via the wiring layer.

Abstract: A method that includes providing a substrate having first and second regions for forming first and second light emitting devices, respectively, that are axisymmetrical in plan view with respect to a boundary line extending between the regions. The method includes mounting first and second light emitting elements in the first and second regions, respectively, arranging first and second light transmissive members respectively thereon, and arranging a covering member to collectively cover at least a portion of the first and second light emitting devices. The first and second devices have external connection terminals that are exposed. The terminals of the first light emitting device are on a side of the first light emitting device opposite to a side thereof adjacent the boundary line, and the terminals of the second light emitting device are on a side thereof opposite to a side of the second light emitting device adjacent the boundary line.

Abstract: A method for producing a phosphate-coated SmFeN-based anisotropic magnetic powder, the method includes: a phosphate treatment of adding an inorganic acid to a slurry containing an SmFeN-based anisotropic magnetic powder, water, and a phosphate compound to adjust a pH of the slurry to a range from 1 to 4.5 to form an SmFeN-based anisotropic magnetic powder having a surface on which a phosphate coating is formed; and oxidizing by heat treating the SmFeN-based anisotropic magnetic powder having the surface on which the phosphate coating is formed, in an oxygen-containing atmosphere at a temperature in a range of 200° C. to 330° C., to form the phosphate-coated SmFeN-based anisotropic magnetic powder.

Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

Abstract: A light emitting device includes: a light emitting element; a wavelength conversion member including: a wavelength conversion portion arranged on or above an upper surface of the light emitting element, and a light-transmissive portion, wherein, in a plan view, the light-transmissive portion surrounds at least one or more lateral surfaces of the wavelength conversion portion; a sealing member comprising a lens portion that is arranged on or above an upper surface of the wavelength conversion member; and a light reflection member that surrounds one or more lateral surfaces of the wavelength conversion member. In a plan view, the wavelength conversion member is inside a perimeter of the lens portion.

Abstract: A method for producing a ceramic complex includes: preparing a raw material mixture that contains 5% by mass or more and 40% by mass or less of first rare earth aluminate fluorescent material particles containing an activating element and a first rare earth element different from the activating element, 0.1% by mass or more and 32% by mass or less of oxide particles containing a second rare earth element, and the balance of aluminum oxide particles, relative to 100% by mass of the total amount of the first rare earth aluminate fluorescent material particles, the oxide particles, and the aluminum oxide particles; preparing a molded body of the raw material mixture; and obtaining a sintered body by calcining the molded body in a temperature range of 1,550° C. or higher and 1,800° C. or lower.

Abstract: A light emitting device includes a package, a cap fixed to the package, and at least one laser element. The cap includes a light-transmissive member having a lower surface facing the package and an upper surface opposite to the lower surface, and a light blocking film arranged on the lower surface of the light-transmissive member and having a shape which has at least one opening. The at least one laser element is disposed in a space bounded by the cap and the package at a position such that the at least one opening is irradiated by laser light emitted from the at least one laser element, at least a part of each of the at least one laser element being disposed in the at least one opening in the light blocking film in a top view.

Abstract: A method for manufacturing a nitride semiconductor light-emitting element includes: forming an n-side layer; forming an active layer on the n-side layer; and forming a p-side layer on the active layer. The step of forming the active layer includes: forming a first layered section comprising a first well layer having a first thickness, and a first barrier layer, at a first temperature, forming a second layered section on the first layered section, the second layered section comprising a second well layer having a thickness greater than the first thickness, and a second barrier layer, at a second temperature lower than the first temperature, and forming a third layered section on the second layered section, the third layered section comprising a third well layer having a third thickness less than the second thickness, and a third barrier layer, at a third temperature higher than the second temperature.

Abstract: A method for manufacturing an image display device includes: preparing a substrate comprising a circuit and a first insulating film covering the circuit; forming a conductive layer on the first insulating film, the conductive layer comprising a single-crystal metal; forming a semiconductor layer on the conductive layer, the semiconductor layer comprising a light-emitting layer; forming a light-emitting element including a bottom surface on the conductive layer, and a light-emitting surface at a side opposite to the bottom surface; forming a second insulating film covering the conductive layer, light-emitting element, and first insulating film; forming a first via extending through the first and second insulating films; and forming a wiring layer on the second insulating film. The first via is located between the wiring layer and the circuit and electrically connects the wiring layer and the circuit. The light-emitting element is electrically connected to the circuit via the wiring layer.

Abstract: A wavelength conversion member includes a substrate and a wavelength conversion layer containing a binder and a phosphor and disposed on the substrate. The wavelength conversion layer has a volume ratio of the phosphor to the binder in a range of 0.75 to 1.45 and an average thickness in a range of 55 ?m to 146 ?m. A method for manufacturing a wavelength conversion member includes applying a phosphor composition onto a substrate, the phosphor composition including a binder, a solvent, and a phosphor, a boiling point of the solvent being in a range of 200° C. to 300° C., a mass ratio of the solvent to the binder being in a range of 0.01 to 0.4, and a mass ratio of the phosphor to the binder being in a range of 3.15 to 6.05, and heat-treating the phosphor composition applied onto the substrate to form a wavelength conversion layer.

Abstract: A light-emitting device includes: a light-emitting unit having a light-emitting surface; a light guide member configured to guide light from the light-emitting unit, the light guide member having a first surface that includes an incident portion on which light from the light-emitting unit is incident, and a second surface from which the light exits, the second surface including a plurality of concentric protrusions; and a movement mechanism configured to move the light guide member such that the incident portion and the plurality of concentric protrusions move together relative to the light-emitting unit in a first direction that intersects a center axis of the light-emitting surface.

Abstract: A method for manufacturing a light-emitting device includes: providing a substrate on which a semiconductor portion is disposed; providing a support substrate having conductivity, including a first surface and a second surface on a side opposite to the first surface, and including a groove portion formed at the first surface; electrically connecting the semiconductor portion and the support substrate by disposing the semiconductor portion on the first surface across the groove portion in a plan view; removing the substrate from the semiconductor portion; bonding a wavelength conversion member to the semiconductor portion from which the substrate has been removed; supplying a resin member having light reflectivity into the groove portion and a space between the support substrate and the wavelength conversion member; and exposing the resin member in the groove portion from the support substrate by removing part of the support substrate from the second surface side.

Abstract: A semiconductor laser element includes: a first nitride semiconductor layer of a first conductivity-type; a second nitride semiconductor layer of a second conductivity-type; and an active region disposed between the first nitride semiconductor layer and the second nitride semiconductor layer, the active region having a single quantum well structure. The active region comprises a first barrier layer, an intermediate layer, a well layer, and a second barrier layer, in this order in a direction from the first nitride semiconductor layer toward the second nitride semiconductor layer. The thickness of the first barrier layer is 20 nm or less. A lattice constant of the intermediate layer is greater than a lattice constant of each of the first barrier layer and the second barrier layer, and smaller than a lattice constant of the well layer. A thickness of the intermediate layer is greater than a thickness of the well layer.