Abstract: A wiring substrate includes: a base body having an insulating property and including a first surface and a second surface on a side opposite the first surface; a resist portion covering at least part of the first surface and at least a part of the second surface of the base body and including a hole portion having a predetermined pattern; and a wiring line disposed in the hole portion of the resist portion so as to be in contact with the base body. In a cross-sectional view in a thickness direction of the base body, a length of an exposed surface of the wiring line exposed from the resist portion is less than a length of a contact surface of the wiring line in contact with the base body.

Abstract: A manufacturing method of a light-emitting device includes: providing a light source comprising: a plurality of light-emitting units, a support substrate comprising, on a first upper surface: a plurality of first terminal portions electrically connected with respective ones of the light-emitting units, each comprising a plurality of terminals, and one or more first wire-connecting portions, and a light-reflective member covering the plurality of light-emitting units and comprising a recess in which one or more first wire-connecting portions are exposed from the light-reflective member; providing a control unit comprising, on a second upper surface: a first region where the light source is to be disposed, and one or more second wire-connecting portions disposed in a second region other than the first region; disposing the light source in the first region; and connecting the first and second wire-connecting portions with a first wire.

Abstract: A light-emitting device comprising a package comprising a light-emitting element comprising a first surface and a second surface opposite to the first surface, a first light-transmissive member arranged on the second surface of the light-emitting element, paired electrodes at the first surface of the light-emitting element, and a first covering member covering the light-emitting element such that the paired electrodes are exposed from the first covering member. The light-emitting device further comprises a light-guiding plate on which the package is placed, and a second covering member arranged on the light-guiding plate and covering laterally the package. The light-emitting device further comprises paired wirings continuously covering the paired electrodes exposed and the first covering members and being connected to the paired electrodes respectively.

Abstract: The method of manufacturing a light emitting module includes: providing a light guiding plate having a first main surface serving as a light emitting surface; and a second main surface positioned opposite to the first main surface and provided with a recess; providing a light adjustment portion containing a fluorescent material; providing a light emitting element unit in which a light emitting element comprising an electrode is integrally bonded to the light adjustment portion; bonding the light adjustment portion of the light emitting element unit to the recess; and forming wiring on the electrode of the light emitting element.

Abstract: A light emitting element includes an n-side nitride semiconductor layer; an active layer disposed on the n-side nitride semiconductor layer and including a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers, the active layer being configured to emit ultraviolet light; and a p-side nitride semiconductor layer disposed on the active layer. At least one of the plurality of barrier layers including, successively from the n-side nitride semiconductor layer side, a first barrier layer containing Al and Ga, and a second barrier layer disposed in contact with the first barrier layer, containing Al, Ga, and In, and having a smaller band gap energy than the first barrier layer. At least one of the plurality of well layers is disposed in contact with a second barrier layer and has a smaller band gap energy than the second barrier layer.

Abstract: A method for manufacturing an image display device according to an embodiment includes: preparing a first substrate, the first substrate including a circuit element, a first wiring layer connected to the circuit element, and a first insulating film covering the circuit element and the first wiring layer; forming a conductive layer including a single-crystal metal on the first insulating film; forming a semiconductor layer including a light-emitting layer on the single-crystal metal; forming a light-emitting element including a light-emitting surface by patterning the semiconductor layer; forming a second insulating film covering the first insulating film, the conductive layer, and the light-emitting element; forming a first via extending through the first and second insulating films; forming a second wiring layer on the second insulating film; and removing at least a portion of the conductive layer on the light-emitting surface.

Abstract: A light emitting device includes multiple light source parts each including at least one first light source part and at least one second light source part, each including a light emitting element and a light-guiding member to guide light of the light emitting element. Each light-guiding member has a taper shape narrowing toward the light emitting element. Light from each light source part satisfies condition of ????tan?1×2 tan ?. (? is an angle of a straight line connecting a position on the light-irradiation surface having an illuminance of at least one-half of that at center position and the center of the light emitting surface of the first light source part, and ? is an angle of a straight line connecting a center of a light-irradiation region on a light-irradiation surface and a center of the light emitting surface of the second light source part.

Abstract: A semiconductor laser element includes: an n-side semiconductor layer formed of a nitride semiconductor; an active layer disposed on or above the n-side semiconductor layer and formed of a nitride semiconductor; a p-side semiconductor layer disposed on the active layer, formed of a nitride semiconductor, and including: an undoped first part disposed in contact with an upper face of the active layer and comprising at least one semiconductor layer, an electron barrier layer disposed in contact with an upper face of the first part, containing a p-type impurity, and having a band gap energy that is larger than a band gap energy of the first part, and a second part disposed in contact with the upper face of the electron barrier layer and comprising at least one p-type semiconductor layer containing a p-type impurity; and a p-electrode disposed in contact with the upper face of the second part.

Abstract: A light-emitting device includes a light-emitting element, the wavelength conversion member, and a light adjustment member. The light-emitting element includes a support substrate, and a first light-emitting portion and a second light-emitting portion disposed adjacent to each other. The wavelength conversion member is configured to perform wavelength conversion of first light emitted from the first light-emitting portion and second light emitted from the second light-emitting portion into third light. The light adjustment member overlaps one of the first light-emitting portion and the second light-emitting portion in a plan view. In the light-emitting element, an emission intensity of the first light at a light emission peak wavelength of the second light is lower than an emission intensity of the second light at the light emission peak wavelength of the second light, during light emission of the light-emitting device.

Abstract: A method for manufacturing a light-emitting device includes providing a light-emitting element having element electrodes including a positive element electrode and a negative element electrode, a wiring substrate having wiring layers, and conductive members each electrically connecting one of the element electrodes and a corresponding one of the wiring layers, with at least one member of the element electrodes, the wiring layers, or the conductive members containing Au; arranging, between a lower surface of the light-emitting element and the wiring substrate, a resin composition in a liquid state; oxidizing a component B in the resin composition in contact with the at least one member containing Au; and after the oxidizing of the component B, heating and curing the resin composition not in contact with the at least one member containing Au.

Abstract: A method of manufacturing a positive electrode material for a lithium ion secondary battery includes: firing a mixture containing a lithium compound, a nickel-containing complex compound, and a molybdenum compound, to obtain first particles containing a lithium transition metal complex oxide having a composition in which a ratio of a number of moles of nickel to a total number of moles of metals other than lithium is greater than 0.6 and less than 1; and bringing the first particles into contact with a liquid medium in such that a solid content concentration of the first particles is in a range of 20 mass % to 80 mass % to remove a part of molybdenum element contained in the first particles to obtain second particles.

Abstract: A positive electrode active material for a nonaqueous electrolyte secondary battery includes particles of a lithium-transition metal composite oxide that contains nickel in the composition thereof and has a layered structure. The particles have an average particle size DSEM based on electron microscopic observation in a range of 1 ?m to 7 ?m in which a ratio D50/DSEM of a 50% particle size D50 in volume-based cumulative particle size distribution to the average particle size based on electron microscopic observation is in a range of 1 to 4, and a ratio D90/D10 of a 90% particle size D90 to a 10% particle size D10 in volume-based cumulative particle size distribution is 4 or less.

Abstract: A method for manufacturing an image display device according to an embodiment includes: preparing a first substrate that includes a circuit element formed on a first surface of a substrate, a first wiring layer connected to the circuit element, and a first insulating film covering the circuit element and the first wiring layer; forming a graphene-including layer on the first insulating film; forming a semiconductor layer that includes a light-emitting layer on the graphene-including layer; forming a light-emitting element that includes a light-emitting surface on the graphene-including layer and includes a top surface at a side opposite to the light-emitting surface by patterning the semiconductor layer; forming a second insulating film covering the first insulating film, the graphene-including layer, and the light-emitting element; forming a first via extending through the first and second insulating films; and forming a second wiring layer on the second insulating film.

Abstract: A method for manufacturing a light-emitting element includes forming a first n-layer made of a nitride semiconductor layer above a first substrate using a first source gas including an Al source gas, a Ga source gas, and a Ge source gas. The method further includes forming a second n-layer made of a nitride semiconductor layer above the first n-layer using a second source gas including an Al source gas, a Ga source gas, and a Si source gas, exposing the second n-layer by removing the first substrate and the first n-layer, and forming an n-electrode on the second n-layer exposed in the exposing of the second n-layer.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: A nitride semiconductor light-emitting element includes: an n-side nitride semiconductor layer; a p-side nitride semiconductor layer; and an active layer between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer. The active layer includes: one or more well layers comprising a first well layer that is nearest to the n-side nitride semiconductor layer, and one or more barrier layers comprising a first barrier layer between the first well layer and the n-side nitride semiconductor layer. The first barrier layer comprises a Si-doped InGaN barrier layer and an undoped GaN barrier layer in this order from the n-side nitride semiconductor layer side.

Abstract: A light emitting apparatus includes: an electrically insulating base member having, in a top plan view, a first edge, a second edge opposite the first edge, a third edge, and a fourth edge opposite the third edge, wherein the first and second edges of the base member extend in a first direction, and the third and fourth edges of the base member extend in a second direction; first and second electrically conductive pattern portions formed on an upper surface of the base member; at least one light emitting device that is electrically connected to the first and second electrically conductive pattern portions; a transparent member disposed on the at least one light emitting device; and a resin portion that surrounds the transparent member in the top plan view, and that partially covers the first and second electrically conductive pattern portions.

Abstract: A light emitting device includes: a plurality of laser elements including a first laser element and a second laser element; a case enclosing the laser elements and including a light-transmissive region; and a plurality of main lenses including a first main lens configured to collimate or converge light emitted from the first laser element and a second main lens configured to collimate or converge light emitted from the second laser element. At least a first portion of the light-transmissive region is disposed on a first imaginary line passing through a light emitting end surface of the first laser element and the first main lens, and at least a second portion of the light-transmissive region is disposed on a second imaginary line passing through a light emitting end surface of the second laser element and the second main lens.

Abstract: A light-emitting device includes: a light-emitting element; a package in which the light-emitting element is arranged; an optical member fixed to the package, the optical member having a lens portion having a lens surface including a first lens, and a non-lens portion that is a portion that does not overlap the lens surface in a top view; and one or more adhesives fixing the optical member to the package. The package has an emission surface through which light from the light-emitting element exits the package. The optical member has an incidence surface on which the light exiting the package enters the optical member, and the lens surface from which the light that has entered the optical member exits the optical member.

Abstract: The present invention relates to a method of producing a composite component, the method including: preparing a second composite by fitting a first molded body onto a first composite including a rare earth magnet and a component contacting the rare earth magnet, such that the first molded body covers at least the entire surface of the first composite corresponding to the rare earth magnet; and forming a second molded body by inserting the second composite into a mold and injection-molding a thermoplastic resin such that the thermoplastic resin covers at least the entire surface of the first composite not covered by the first molded body and also contacts the first molded body.