Abstract: The present invention is related to a series of derivatives of novel ether diamine compounds prepared by the cyanobutylation reaction of an alcohol having 3 to 22 carbon atoms with 2-pentenenitrile to form a branched alkyl ether nitrile. The etheraminonitriles formed by the process are hydrogenated to form alkylether amines. The resulting product can be reacted with 2-pentenenitrile and or acrylonitrile and in a subsequent step, hydrogenated to yield a diamine. Specifically, the present invention deals with two types of tertiary amines one made by the reaction of novel ether diamines compounds with ethylene oxide, propylene oxide or butylene oxide or mixtures thereof, producing alkoxylated tertiary amines and the other made by the reaction of novel ether amine compounds with formaldehyde and hydrogen producing methylated tertiary amines. The invention also disclosed novel amine oxides, and quaternary compounds made from said tertiary amines.

Abstract: Aluminoxanes are used as activators for the gas, solution or slurry phase polymerization of olefins in the presence of single site catalysts. Aluminoxanes contain residual aluminum alkyls which may poison the catalysts. The residual aluminum alkyls may be bound an/or removed from the aluminoxanes by treatment with carbohydrates such as cellulose, starch or sugar.

Abstract: A process for the removal of impurities from a thermoplastic polymer, comprising mixing with the polymer in a molten state a stripping agent comprising a solution of carbon dioxide in water, passing the mixture to a vessel held at a pressure and which is less than atmospheric pressure, allowing impurities to defuse out of the polymer into the volatilised stripping agent, and removing the volatilised stripping agent with the impurities from the mixture. The invention also relates to the stripping agent itself, which is a solution of carbon dioxide in water.

Abstract: A method and corresponding device for compacting a powder material into a homogenous article. The method includes the steps of, placing the powder material in a molding cavity connected to a gas source, blowing gas into the lower end of the molding cavity so that the particles in the powder material are suspended in a gas stream, sealing the upper end of the molding cavity by an upper pressing punch, connecting the lower end of the molding cavity to a vacuum source, sealing the connection to the vacuum source by moving a lower punch relative to the lower end portion of the molding cavity, and thereafter compacting the powder material with the help of the pressing punch.

Abstract: An optical inspection system is presented, aimed at detecting defects on a substantially flat workpiece having an axis of symmetry. The workpiece is supported on a stage so as to be in an inspection plane, the stage being mounted for rotation in a plane parallel to the inspection plane. A scanning apparatus is accommodated above the workpiece, and comprises an illumination assembly, a plurality of optical assemblies, and a plurality of area sensors. The illumination assembly produces a plurality of incident radiation components for illuminating a strip on the workpiece extending parallel to the axis symmetry between two opposite sides thereof. The optical assemblies are aligned along the axis of symmetry in a spaced-apart parallel relationship, and are mounted for reciprocating movement within a plane parallel to an inspection area that covers substantially a half of the workpiece.

Abstract: A method is presented for controlling a process to be applied to a patterned structure in a production run. Reference data is provided being representative of diffraction signatures corresponding to a group of different fields in a structure similar to the patterned structure in the production line, and of a control window for the process parameters corresponding to a signature representative of desired process results. The group of different fields is characterized by different process parameters used in the manufacture of these fields. The method utilizes an expert system trained to be responsive to input data representative of a diffraction signature to provide output data representative of corresponding effective parameters of the process. Optical measurements are applied to different sites on the patterned structure in the production line to obtain diffraction signatures of thereof and generate corresponding measured data.

Abstract: The melt of polyvinyl aromatic polymers comprising from 10 to 45 weight % of star branched polymer prepared using a combination of thermal and tetra functional peroxide initiation has an improved melt strength permitting better foam formation for extrusion foam blown with conventional blowing agents and inert gases including CO2.

Abstract: A method is disclosed for separating a semiconductor epitaxial structure from an insulating growth substrate. The method utilizes electrochemical anodic reactions to remove a thin etch layer disposed near the growth interface. The thin etch layer can be an intentional layer made of a material different from the epitaxial structure and/or can include a material with a high defect density. The method can be applied in the fabrication of optoelectronic and electronic devices from III-V materials, in particular gallium-nitride based materials.

Abstract: Method and device for production of powder metal bodies comprising: introducing powder material (4) in a compacting chamber (4) in a hollow die (1), compacting the material in mainly axial direction in the compacting chamber by urging a first punch (2), axially into said compacting chamber, advancing said first punch (2) further into compacting chamber for further compacting the powder material and imparting upon the die plate (1) a biasing tension, causing the edge portion of the die opening to move under increasing tension in the same direction as the first punch (2), thereby causing opening radial size reduction, causing axial compression also in a direction opposed to that by the first punch (2) by a second punch (3), arranged to move opposed relative the die (1) as compared to that of the first punch (2), and retracting the first punch (2) axially, thereby relieving the hollow die from its biasing and regaining initial form, thereby simultaneously expelling the compact thus formed.

Abstract: This invention describes a method for fabricating light-emitting diodes with an improved external quantum efficiency on a transparent substrate. The LED device structure is mounted face-down on and bonded to a handling wafer. The LED dies on the transparent substrate are separated by applying mutually aligned separation cuts from both sides of the transparent substrate and by then cutting through the handling wafer and the substrate wafer. This method allow the use of substrates that are difficult to thin and cleave. Contacts can be applied from one side of the devices only. The method is suitable for low cost high volume manufacturing.

Abstract: An avalanche photodetector (APD) is made from composite semiconductor materials. The absorption region of the APD is formed in a n-type InGaAs layer. The multiplication region of the APD is formed in a p-type silicon layer. The two layers are bonded together. The p-type silicon layer may be supported on an n+ type silicon substrate. A p-n junction formed at the interface between the silicon layer and the substrate. Alternatively, the n-type InGaAs layer may be supported on an InP substrate. In this case, a p-n junction is formed by making n-doped surface regions in the p-type silicon superlayer. In either case, the p-n junction is reverse biased for avalanche multiplication of charge carriers. The maximum of the electric field distribution in the APD under reverse bias operating conditions is located at p-n junction. This maximum is at a distance equal to about the thickness of the p-type silicon layer away from the absorption region.

Abstract: A planar avalanche photodetector (APD) is fabricated by forming a, for example, InGaAs absorption layer on a p+-type semiconductor substrate, such as InP, and wafer-bonding to the absorption layer a second p-type semiconductor, such as Si, to form a multiplication layer. The layer thickness of the multiplication layer is substantially identical to that of the absorption layer. A region in a top surface of the p-type Si multiplication layer is doped n+-type to form a carrier separation region and a high electric field in the multiplication region. The APD can further include a guard-ring to reduce leakage currents as well as a resonant mirror structure to provide wavelength selectivity. The planar geometry furthermore favors the integration of high-speed electronic circuits on the same substrate to fabricate monolithic optoelectronic transceivers.

Abstract: A method for producing a stress-engineered substrate includes selecting first and second materials for forming the substrate. An epitaxial material for forming a heteroepitaxial layer is then selected. If the lattice constant of the heteroepitaxial layer (aepi) is greater than that (asub) of the immediate substrate layer the epitaxial layer is deposited on, then the epitaxial layer is kept under “compressive stress” (negative stress) at all temperatures of concern. On the other hand, if the lattice constant of the heteroepitaxial layer (aepi) is less than that (asub) of the immediate substrate layer the epitaxial layer is deposited on, then the epitaxial layer is kept under “tensile stress” (positive stress). The temperatures of concern range from the annealing temperature to the lowest temperature where dislocations are still mobile.

Abstract: A positioning assembly is presented for positioning a substantially disk-shaped workpiece in a registered position. The positioning assembly comprises spaced-apart guiding members defining a common support plane for supporting the workpiece, such that they engage the circumference of the workpiece at spaced-apart locations. Each guiding member is mounted for pivotal movement in the support plane between its two extreme positions. The movements of the guiding members transport the workpiece towards the registered position.

Abstract: A planar avalanche photodetector (APD) is fabricated by forming a, for example, InGaAs absorption layer on a p+-type semiconductor substrate, such as InP, and wafer-bonding to the absorption layer a second p-type semiconductor, such as Si, to form a multiplication layer. The layer thickness of the multiplication layer is substantially identical to that of the absorption layer. A region in a top surface of the p-type Si multiplication layer is doped n+-type to form a carrier separation region and a high electric field in the multiplication region. The APD can further include a guard-ring to reduce leakage currents as well as a resonant mirror structure to provide to wavelength selectivity. The planar geometry furthermore favors the integration of high-speed electronic circuits on the same substrate to fabricate monolithic optoelectronic transceivers.

Abstract: An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafers top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined viewing location while maintaining the patterned surface completely under water. The optical system also includes a pull-down unit for pulling the measurement system slightly below the horizontal prior to the measurement and returns the measuring system to the horizontal afterwards.

Abstract: Olefin co- or homopolymers having a good molecular weight and short chain branching may be prepared in the presence of a pyridyl bridged bisphosphinimine complex of a Group 8, 9 or 10 metal.

Abstract: The present invention relates to syringes comprising a housing (1), a dose setting mechanism in the housing, an injection button (6), and a needle receiving member. By this syringe doses of a medicine can be set by the dose setting mechanism and by operating the injection button (6) the set dose can be pressed out from an ampoule accommodated in the housing (1) through a needle (5) mounted on the needle receiving member. The housing further comprises an accessible compartment covered by a lid (10) or a cap (8) in which compartment accessories (11) are stored.

Abstract: A load bearing attachment fitting for a composite material structure. The fitting includes an elongate body having a plurality of undulations formed along its longitudinal sides. The undulations engage the fibers in the fiber-resin matrix so as to transmit loads from the fitting into the body of the structure. To form the connection between the fitting and the composite material structure, longitudinal strips of fiber-resin tape are laid over the fitting and an adjacent form which defines the body of the structure. Crosswise fibers are then wound over the longitudinal tape to force and hold the longitudinal fibers in conformity with the undulations along the fitting, so that the longitudinal fibers transmit loads from the fitting into the composite material structure. A fluidizable form may be used to form the body of the structure, and after curing the forms may be removed by washing this out through a threaded bore in the attachment fitting.

Abstract: A new and distinct Betula pendula plant characterized by a unique combination of extremely cut, thread-like foliage and dwarf, vigorous habit.