Abstract: In an optocoupler circuit, a first direction path, which transmits signals from a first to a second terminal, includes a first level shifter, a second level shifter, and a first optocoupler. The first level shifter receives a first input signal at the first terminal, and shifts a voltage level of the first input signal to a first shifted voltage level with respect to a first ground level in a first power domain, to provide a first shifted signal. The first optocoupler receives the first shifted signal, and generates a first optocoupler signal in response to the first shifted signal. The second level shifter receives the first optocoupler signal, and shifts a voltage level of the first optocoupler signal to a second shifted voltage level with respect to a second ground level in a second power domain, to provide a second shifted signal at the second terminal.

Abstract: An electronic component includes a device die and a substrate. The device die includes conductive contacts with conductive pillars conductively affixed to conductive contact. The conductive pillars include a cavity formed in an end of the conductive pillar opposite the conductive contact. The substrate includes of conductive pads that are each associated with one of the conductive contacts. The conductive pads include a conductive pad conductively affixed to the substrate, and a conductive ring situated within a cavity in the end conductive rings have a capillary formed along an axis of the conductive ring. A solder material fills the capillary of each of the conductive rings and the cavity formed in the end of the associated conductive pillars to form a conductive joint between the pillars and the conductive pads.

Abstract: A semiconductor device having a radiating element and a directing structure is provided. The semiconductor device includes a device package. A semiconductor die is coupled to the radiating element integrated in the device package. The directing structure is affixed to the device package by way of an adhesive. The directing structure is located over the radiating element and configured for propagation of radio frequency (RF) signals.

Abstract: One example discloses an open-circuit detector, comprising: a first current source configured to inject a current at an output of a closed-loop circuit; a detector configured to monitor a voltage of the closed-loop circuit; wherein the detector is configured to indicate whether the voltage monitored exceeds a predetermined threshold voltage; a controller configured to regulate the current injected by the first current source; wherein the controller is configured to set an open-circuit flag if the current injected caused the voltage to exceed the predetermined threshold voltage.

Abstract: An apparatus and method for updating the firmware version in a network node is described. The firmware is divided into a plurality of blobs, each blob having an associated blob version. Each blob version is associated with a firmware version. The method includes receiving notification from a client server network node of an updated version of a first blob and the compatible versions of the remaining blobs. A blob upgrade order is determined from the first blob updated version, the remaining blobs compatible versions, and the remaining blobs current versions. Each blob is upgraded in the blob upgrade order. The client is restarted after each blob upgrade.

Abstract: A waveguide antenna (200) is disclosed, comprising: a first plurality (220) of slots (222,224), for producing a beam having a first radiation pattern (301) at a first resonant frequency (f1); and a second plurality (230) of slots (232, 234), for producing a beam having a second radiation pattern (302) at a second resonant frequency (f2).

Abstract: A method for cartesian (IQ) to polar phase conversion includes: converting a first input value into a first absolute value, and a second input value into a second absolute value; converting the first absolute value into a first logarithmic value by calculating a scaled logarithmic value of the first absolute value, and the second absolute value into a second logarithmic value by calculating a scaled logarithmic value of the second absolute value; subtracting the first logarithmic value from the second logarithmic value, to provide a subtract value; and selecting a phase value from a plurality of phase values stored in a storage unit. Each of the plurality of phase values corresponds to a respective index value, and the phase value is selected taking the subtract value as the index value.

Abstract: A method and apparatus are described for compensating input voltage ripples of an interleaved boost converter using cycle times. In an embodiment, a phase compensator receives a first duty cycle measurement of a first converter and a second duty cycle measurement of a second converter, compares the first duty cycle to the second duty cycle and generates a phase compensation in response thereto. A phase combiner combines a phase adjustment output and the phase compensation and produces a phase control output, and a cycle controller is coupled to the first and the second converters to generate a first drive signal to control switching of the first converter and to generate a second drive signal to control switching of the second converter, wherein a time of the second drive signal is adjusted using the phase control output.

Abstract: A wafer-scale die packaging device is fabricated by providing a high-k glass carrier substrate having a ceramic region which includes a defined waveguide area and extends to a defined die attach area, and then forming, on a first glass carrier substrate surface, a differential waveguide launcher having a pair of signal lines connected to a radiating element that is positioned adjacent to an air cavity and surrounded by a patterned array of conductors disposed over the ceramic region in a waveguide conductor ring. After attaching a die to the glass carrier substrate to make electrical connection to the differential waveguide launcher, a molding compound is formed to cover the die, differential waveguide launcher, and air cavity, and an array of conductors is formed in the molding compound to define a first waveguide interface perimeter surrounding a first waveguide interface interior.

Abstract: One example discloses a level-shifter circuit, comprising: a pre-driver stage configured to receive differential inputs and generate differential pre-driver outputs; a first output stage coupled to receive the differential pre-driver outputs and generate a single-ended first stage output; a second output stage coupled to receive the differential pre-driver outputs and generate a single-ended second stage output; and wherein the first and second stage outputs together form a differential output.

Abstract: An integrated circuit is provided with a protected circuit wherein a first FinFET operably coupled to a signal node is protected against electrostatic discharge voltage damage by a standard cell electrostatic discharge protection circuit which is connected between first and second voltage supplies and which includes a first FinFET diode connected between the signal node and the first voltage supply, and a second FinFET diode connected between the signal node and the second voltage supply, where the first and second FinFET diodes are each formed with a FinFET device comprising (1) a body well region forming a first diode terminal connected to one of the first or second voltage supplies, and (2) a shorted gate, source, and drain regions forming a second diode terminal connected to the signal node.

Abstract: A thread management circuit of a processing system stores a thread identifier table and a thread completion table. The thread management circuit receives, from a processor core, a request for execution of a portion of an application by an accelerator circuit. The thread management circuit allocates a thread identifier available in the thread identifier table to the processor core for the execution of the portion by the accelerator circuit. The thread management circuit communicates a response and an acceleration request, both including the allocated thread identifier, to the processor core and the accelerator circuit, respectively. The thread management circuit communicates a thread joining response to the processor core based on a received thread joining request and an indication by the thread completion table that the execution of the portion by the accelerator circuit is complete. The executed portion is integrated with the application based on the thread joining response.

Abstract: A semiconductor die includes a transistor with an emitter, base, and collector. The base includes an intrinsic base that is located in monocrystalline semiconductor material grown in an opening of a first semiconductor layer. A second semiconductor layer is located above the first semiconductor layer and includes a monocrystalline portion. In some embodiments, an opening was formed in the second semiconductor layer wherein a portion of the underlying first semiconductor layer was etched to form a cavity in which a monocrystalline intrinsic base was grown.

Abstract: Embodiments of a device and a method for providing data are disclosed. In an embodiment, a device includes a processing system configured to split data of a request into messages by splitting the data based on a node of the data, where the messages fit a supported size, and provide the messages that include the data of the request to a communications interface.

Abstract: One example discloses a signal driver circuit, including: an input configured to receive an input signal; an output configured to transmit an output signal; a low drop-out voltage regulator (LDO) having a regulated voltage output; a set of voltage-modulated amplifiers having a first input coupled to the regulated voltage output, and a second input configured to receive the input signal; wherein the voltage-modulated amplifier is configured to amplify the input signal and transmit an amplified input signal on the output of the signal driver circuit; a de-emphasis controller, including a set of de-emphasis levels; wherein the de-emphasis controller is configured to selectively switch-on a first subset of the set of voltage-modulated amplifiers and switch-off a second subset of the set of voltage-modulated amplifiers based on the de-emphasis levels.

Abstract: An integrated electro-static discharge (ESD) device has a set of metal layers. Each metal layer in the set has one or more first-terminal metal features interleaved with one or more second-terminal metal features in a lateral direction, and at least one first-terminal metal feature in a metal layer of the set overlaps in a normal direction at least one second-terminal metal feature in an adjacent metal layer of the set. By overlapping metal features in the normal direction, capacitance can be added to the ESD device, which improves its operating characteristics, without increasing the layout size of the ESD device.

Abstract: An amplifier module includes a module substrate with a mounting surface, a signal conducting layer, a ground layer, and a ground terminal pad at the mounting surface. A thermal dissipation structure extends through the module substrate. A ground contact of a power transistor die is coupled to a surface of the thermal dissipation structure. Encapsulant material covers the mounting surface of the module substrate and the power transistor die, and a surface of the encapsulant material defines a contact surface of the amplifier module. A ground terminal is embedded within the encapsulant material. The ground terminal has a proximal end coupled to the ground terminal pad, and a distal end exposed at the contact surface. The ground terminal is electrically coupled to the ground contact of the power transistor die through the ground terminal pad, the ground layer of the module substrate, and the thermal dissipation structure.

Abstract: A transistor includes first and second sets of gate fingers formed in an active area of a semiconductor substrate, an input bond pad formed in the semiconductor substrate and spaced apart from the active area, a first conductive structure with a proximal end coupled to the input bond pad and a distal end coupled to the first set of gate fingers, and a second conductive structure with a proximal end coupled to the input bond pad and a distal end coupled to the second set of gate fingers. A non-conductive gap is present between the distal ends of the first and second conductive structures. The transistor further includes an odd-mode oscillation stabilization circuit that includes a first resistor with a first terminal coupled to the distal end of the first conductive structure, and a second terminal coupled to the distal end of the second conductive structure.

Abstract: Various embodiments relate to a method for a non simultaneous transmit and receive (NSTR) soft access point (AP) multi-link device (MLD) negotiating a traffic identifier (TID)-to-link mapping with a non-AP MLD, including: transmitting, by the NSTR soft AP MLD, a first frame that includes information on a first group of links that the NSTR soft AP MLD proposes to map to a first TID for the non-AP MLD; receiving, by the NSTR soft AP MLD, a second frame that includes an indication that the non-AP MLD agrees with the NSTR soft AP MLD's proposal on mapping of the first TID to the first group of links; and transmitting, by the NSTR soft AP MLD, traffic to the non-AP MLD on the first group of links based on the mapping.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming an assembly including placing a semiconductor die and a launcher structure on a carrier substrate, encapsulating at least a portion of the semiconductor die and the launcher structure, and applying a redistribution layer on a surface of the semiconductor die and a surface of the launcher structure to connect a bond pad of the semiconductor die with an antenna launcher of the launcher structure. The assembly is attached to a substrate and a waveguide overlapping the assembly is attached to the substrate. The waveguide structure is physically decoupled from the assembly.