Patents Assigned to NXP
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Publication number: 20140181534Abstract: According to an example embodiment, a device provides cryptographic processing functions using secret data. The device can include protection from differential power analysis (DPA). The encryption processing circuit and its memory can be decoupled from external power source(s) during encryption-related computations. A local power storage element, such as a capacitive element, can provide power while the encryption processing circuit is decoupled from the external power source(s). The local power storage element can then be reconnected and charged once the encryption-related computations are completed or paused.Type: ApplicationFiled: December 21, 2012Publication date: June 26, 2014Applicant: NXP B.V.Inventor: Juergen Nowottnick
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Patent number: 8759174Abstract: A method of fabricating a device, including the steps of forming a first silicon oxide layer within a first region of the device and a second silicon oxide layer within a second region of the device, implanting doping ions of a first type into the first region, implanting doping ions of a second type into the second region, and etching the first and second regions for a determined duration such that the first silicon oxide layer is removed and at least a part of the second silicon oxide layer remains.Type: GrantFiled: September 15, 2009Date of Patent: June 24, 2014Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A., NXP B.V.Inventors: Markus Müller, Alexandre Mondot, Pascal Besson
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Patent number: 8761288Abstract: A multiuser downlink multiple-input multiple-output (MIMO) system with limited channel information feedback includes an error-free channel vector quantization scheme. Each user has multiple antennas, and the base station includes a matching number of antennas. Each MIMO channel is measured at the terminus end of a corresponding user, and used to obtain the channel state information at the receiver (CSIR). A few data bits of CSIR information are feed back to the base station through the limited feedback channels. The base station collects all these CSIR feedback data bits into a CSI at the transmitter (CSIT). The CSIT is used to determine which users are served, and how to configure a corresponding multi-user precoder. The user data channels will later all be transmitted through such precoder. A codebook of channel quantization vectors is pre-defined and distributed amongst the base station and all the users.Type: GrantFiled: February 26, 2009Date of Patent: June 24, 2014Assignee: NXP, B.V.Inventors: Wei Miao, Min Huang, Shindong Zhou, Gang Wu
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Publication number: 20140172700Abstract: A reconfigurable digital wallet device such as a smart card containing a secure element and acting as an instantiation of a subset of a virtual wallet stored in the cloud. The digital wallet device is managed and synchronized with the virtual wallet in the cloud using a mobile device such as a smartphone.Type: ApplicationFiled: December 19, 2012Publication date: June 19, 2014Applicant: NXP B.V.Inventors: Philippe Teuwen, Cedric Colnot
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Publication number: 20140167822Abstract: A cascode circuit arrangement has a low voltage MOSFET and a depletion mode power device mounted on a substrate (for example a ceramic substrate), which can then be placed in a semiconductor package. This enables inductances to be reduced, and can enable a three terminal packages to be used if desired.Type: ApplicationFiled: December 3, 2013Publication date: June 19, 2014Applicant: NXP B.V.Inventors: Philip Rutter, Jan Sonsky, Matthias Rose
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Publication number: 20140167055Abstract: Methods and systems for processing a silicon wafer are disclosed. A method includes providing a flash memory region in the silicon wafer and providing a bipolar transistor with a polysilicon external base in the silicon wafer. The flash memory region and the bipolar transistor are formed by depositing a single polysilicon layer common to both the flash memory region and the bipolar transistor.Type: ApplicationFiled: December 6, 2013Publication date: June 19, 2014Applicant: NXP B.V.Inventors: Evelyne Gridelet, Hans Mertens, Michiel Jos van Duuren, Tony Vanhoucke, Viet Thanh Dinh
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Publication number: 20140167797Abstract: Various automatic range scaling solutions for smart power switches are provided, to enable current monitoring across a wide dynamic range. In preferred examples, use is made of current sensing transistors. The circuits provide overload protection combined with wide range current measurement.Type: ApplicationFiled: December 11, 2013Publication date: June 19, 2014Applicant: NXP B.V.Inventor: Steven Aerts
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Publication number: 20140167858Abstract: The disclosure relates to an amplifier device comprising an integrated circuit die (701a; 701b) having a first amplifier (702a; 702b) and a second amplifier. A Doherty amplifier may be implemented in accordance with the present invention. The amplifier device also comprises a first connector (706a; 706b) having a first end coupled to the first amplifier and a second end for coupling with a circuit board (718a; 718b), a second connector (708a; 708b) having a first end coupled to the second amplifier (704a; 704b) and a second end for coupling with a circuit board (718a; 718b), a shielding member (710a; 710b) having a first end coupled to the integrated circuit die (701a; 701b) and a second end for coupling with a circuit board (718a; 718b), the shielding member (710a; 710b) situated at least partially between the second connector and the first connector (706a; 706b) and a capacitor. The capacitor has a first plate and a second plate.Type: ApplicationFiled: December 17, 2013Publication date: June 19, 2014Applicant: NXP B.V.Inventors: Albert Gerardus Wilhelmus Philipus van Zuijlen, Vittorio Cuoco, Josephus Henricus Bartholomeus van der Zanden
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Publication number: 20140170762Abstract: An integrated circuit arrangement (100) is disclosed comprising a substrate (210); and a gas such as a CO2 sensor comprising spatially separated electrodes including at least an excitation electrode (132) and a sensing electrode (142); a volume (120) in contact with said pair of electrodes, said volume including a chemical compound for forming a reaction product with said gas in an acid-base reaction; a signal generator (212) conductively coupled to the excitation electrode and adapted to provide the excitation electrode with a microwave signal; and a signal detector (214) conductively coupled to the sensing electrode and adapted to detect a change in said microwave signal caused by a permittivity change in said volume, said permittivity change being caused by said reaction product. A device comprising such an IC arrangement and a method of sensing the presence of a gas using such an IC arrangement are also disclosed.Type: ApplicationFiled: December 4, 2013Publication date: June 19, 2014Applicant: NXP B.V.Inventors: Dimitri Soccol, Youri Victorovitch Ponomarev, David van Steenwinckel
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Publication number: 20140167865Abstract: According to an example embodiment, a device includes a resonant circuit configured and arranged to provide a peak current flow at a resonance frequency. A trimming circuit provides variable impedances to the resonant circuit and thereby changes the resonance frequency for the resonant circuit. A driver circuit is configured to generate a trimming signal that oscillates at a desired frequency. A switch circuit couples and decouples the driver circuit to the resonant circuit for driving the resonant circuit with the trimming signal. An amplitude detection circuit detects amplitudes for signals generated in response to the trimming signal being connected to the resonant circuit. A processing circuit correlates detected amplitudes from the amplitude detection circuit with different impedance values of the variable trimming circuit.Type: ApplicationFiled: December 18, 2012Publication date: June 19, 2014Applicant: NXP B.V.Inventor: Sven Simons
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Publication number: 20140169590Abstract: A time modification system is disclosed. The time modification module includes a delay module for receiving an input signal comprising a series of digital samples at an input sample rate. The delay module provides a delayed output signal. The time modification module further includes a duration modification module for receiving the input signal or a delayed version thereof, and providing a modified output signal. A first switch is included for selecting either the delayed output signal or the modified output signal.Type: ApplicationFiled: December 18, 2013Publication date: June 19, 2014Applicant: NXP B.V.Inventors: Ronald Hubertus Bernardus Schiffelers, Temujin Gautama, Sebastian Schreuder
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Publication number: 20140167064Abstract: A GaN hetereojunction structure has a three-layer dielectric structure. The lowermost and middle portions of the gate electrode together define the gate foot, and this is associated with two dielectric layers. A thinner first dielectric layer is adjacent the gate edge at the bottom of the gate electrode. The second dielectric layer corresponds to the layer in the conventional structure, and it is level with the main portion of the gate foot.Type: ApplicationFiled: December 16, 2013Publication date: June 19, 2014Applicant: NXP B.V.Inventors: Godefridus Adrianus Maria Hurkx, Jeroen Antoon Croon, Johannes Josephus Theodorus Marinus Donkers, Stephan Heil, Jan Sonsky
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Publication number: 20140169504Abstract: A digital down converter is disclosed. The digital down converter includes an input for receiving a sampled signal having a frequency band of interest, sampled at a first sampling rate, a commutator structure for distributing a set of real sampled signals for polyphase filtering, a complex band pass polyphase filter associated with the distributed signals, for generating in phase and quadrature filtered components, a baseband notch filter, and a frequency translator for generating in phase and quadrature components of the frequency band of interest at baseband.Type: ApplicationFiled: November 14, 2013Publication date: June 19, 2014Applicant: NXP B.V.Inventor: Zahir SMAIL
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Patent number: 8754360Abstract: The present invention relates to a detection system for detecting movements of a movable object (6).Type: GrantFiled: September 26, 2009Date of Patent: June 17, 2014Assignee: NXP, B.V.Inventors: Johannes Anthonie Josephus van Geloven, Bernardus Martinus Johannes Kup
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Publication number: 20140159781Abstract: A local oscillator signal generation circuit is presented. The circuit comprises: a delay device adapted to delay a data signal according to a control signal; a data flip-flop having the delayed data signal provided to its data input terminal and a reference clocking signal provided to its clock input terminal; and a control circuit adapted to generate first and second partially overlapping pulse windows from the delayed data signal and to generate a control signal based on the first and second partially overlapping pulse windows and the reference clocking signal. The control signal is provided to the delay device to control the amount by which the data signal is delayed so as to align the rising edges of the data signal and the reference clock signal. A local oscillator signal is derived from the output of the data flip-flop.Type: ApplicationFiled: November 12, 2013Publication date: June 12, 2014Applicant: NXP B.V.Inventor: Jean-Robert TOURRET
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Publication number: 20140159598Abstract: An LED control circuit for controlling a current supplied to an LED unit is disclosed. A sense resistor is included for sensing an output current provided from an output node. A comparator circuit is provided for detecting upper and lower thresholds in the output current based on the voltages at ends of the sense resistor, and for controlling a current supply to maintain the current between the thresholds. The comparator circuit comprises a reference current source and reference resistors, for generating upper and lower threshold references. The comparator circuit further comprises a comparator for detecting a mid-range voltage dependent on the output current and deriving a control signal which indicates if the detected voltage is above or below the mid-range voltage. The control signal is used to adjust the reference current source, thereby to vary the upper and lower threshold references to maintain a constant median or average output current.Type: ApplicationFiled: November 6, 2013Publication date: June 12, 2014Applicant: NXP B.V.Inventor: Hendrik BOEZEN
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Publication number: 20140159935Abstract: The invention refers to an RF front-end (100) adapted to receive or transmit signals located in at least two separated frequency bands (100) comprising an input and an output and further comprising a first phase shifter (5) coupled to the input of the RF front-end (100); a second phase shifter (6) coupled to the output of the RF front-end (100); the first phase shifter (1) being coupled to the second phase shifter (2) via a first amplifier (3) and second amplifier (4), respectively.Type: ApplicationFiled: December 4, 2013Publication date: June 12, 2014Applicant: NXP B.V.Inventors: Antonius de Graauw, Markus van Schie
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Publication number: 20140162426Abstract: Disclosed is a method of manufacturing a bipolar transistor, comprising providing a substrate (10) comprising a first isolation region (12) separated from a second isolation region by an active region (11) comprising a collector impurity; forming a layer stack over said substrate, said layer stack comprising a base layer (14, 14?), a silicon capping layer (15) over said base layer and a silicon-germanium (SiGe) base contact layer (40) over said silicon capping layer; etching the SiGe base contact layer to form an emitter window (50) over the collector impurity, wherein the silicon emitter cap layer is used as etch stop layer; forming sidewall spacers (22) in the emitter window; and filling the emitter window with an emitter material (24). A bipolar transistor manufactured in accordance with this method and an IC comprising one or more of such bipolar transistors are also disclosed.Type: ApplicationFiled: February 11, 2014Publication date: June 12, 2014Applicant: NXP B.V.Inventors: Evelyne Gridelet, Johannes Josephus Theodorus Marinus Donkers, Tony Vanhoucke, Petrus Hubertus Cornelis Magnee, Hans Mertens, Blandine Duriez
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Publication number: 20140160607Abstract: An ESD protection circuit comprises a series connection of at least two protection components between a signal line to be protected and a return line (e.g. ground), comprising a first protection component connected to the signal line and a second protection component connected to the ground line. They are connected with opposite polarity so that when one conducts in forward direction the other conducts in reverse breakdown mode. A bias voltage source connects to the junction between the two protection components through a bias impedance. The use of the bias voltage enables the signal distortions resulting from the ESD protection circuit to be reduced.Type: ApplicationFiled: November 5, 2013Publication date: June 12, 2014Applicant: NXP B.V.Inventors: Klaus REIMANN, Hans-Martin RITTER, Wolfgang Schnitt, Anco HERINGA
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Publication number: 20140159173Abstract: A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.Type: ApplicationFiled: February 4, 2014Publication date: June 12, 2014Applicant: NXP B.V.Inventors: David van Steenwinckel, Thomas Merelle, Franciscus Petrus Widdershoven, Viet Hoang Nguyen, Dimitri Soccoi, Jan Leo Dominique Fransaer