Abstract: A system comprising: a LDO regulator configured to receive a supply voltage and provide an output voltage based on a function of the supply voltage, the LDO regulator switchable between at least a first and second mode, wherein the first and second modes each define the output voltage provided to the output terminal based on different functions of the supply voltage; and a digital logic controller configured to select the mode of the LDO regulator by control signalling to the LDO regulator, the digital logic controller configured to receive power for the provision of the control signalling from the LDO regulator; wherein the LDO regulator comprises LDO start-up circuitry configured to cause the LDO regulator, during start-up, to default to a predetermined one of the first and second mode and the LDO start-up circuitry further configured to prevent the digital logic controller from controlling the mode of the LDO regulator.

Abstract: Embodiments of a device and method are disclosed. In an embodiment, a calibration circuit for a temperature sensor circuit includes a current source configured to generate a temperature independent reference current and further includes a voltage window generator circuit. The voltage window generator circuit is configured to generate a voltage window for the temperature sensor circuit using at least the temperature independent reference current. The voltage window is defined by a first reference voltage and a second reference voltage. The voltage window generator circuit is further configured to control a width of the voltage window to include a range of proportional to absolute temperature (PTAT) voltage outputs of a temperature sensor in the temperature sensor circuit.

Abstract: A semiconductor device, such as a laterally diffused metal-oxide-semiconductor (LDMOS) transistor, includes a semiconductor substrate in which a source region and a drain region are disposed. The drain region has a drain finger terminating at a drain end. A gate structure is supported by the semiconductor substrate between the source region and the drain region, the gate structure extending laterally beyond the drain end. A drift region in the semiconductor substrate extends laterally from the drain region to at least the gate structure. The drift region is characterized by a first distance between a first sidewall of the drain finger and a second sidewall of the gate structure, and the gate structure is laterally tilted away from the drain region at the drain end of the drain finger to a second distance that is greater than the first distance.

Abstract: A self-optimizing System-on-Chip (SOC) includes multiple cores, multiple hardware accelerators, multiple memories and an interconnect framework. The SOC also includes a machine learning (ML) module that uses data flow information to build a ML network dynamically and configures all the various hardware blocks autonomously, to achieve predetermined application performance targets. The SOC is able to recover from hangs caused when testing various configuration settings. The SOC also avoids configuration settings that cause severe drops in performance.

Abstract: An amplifier includes a package that includes a carrier amplifier having a carrier amplifier input and output, a peaking amplifier having a peaking amplifier input and output, and corresponding input and output leads. The package includes a first integrated passive device including a first capacitor structure. The first integrated passive device includes a first contact pad coupled to the peaking amplifier output and a second contact pad coupled to the peaking output lead. The package includes a second integrated passive device including a second capacitor structure. The second integrated passive device includes a third contact pad coupled to the carrier amplifier output and a fourth contact pad coupled to the carrier output lead. The amplifier includes input circuitry a combining node configured to combine a carrier output signal and a peaking output signal.

Abstract: The disclosure relates to a controller area network, CAN, transceiver and a CAN controller. The CAN transceiver is configured to: compare a signal from the CAN bus with a negative threshold level; and provide a wake-up indication to the CAN controller based on the signal matching a predetermined pattern of one or more periods in which the signal is less than the negative threshold level. The CAN controller is configured to provide instructions to transmit a wake-up indication on the CAN bus.

Abstract: A packaging semiconductor device, such as a fan-out Wafer-Level Packaging (FOWLP) device, is fabricated by providing a semiconductor device (20) having conductive patterns (22) disposed on a first surface and then forming, on the conductive patterns, photoresist islands (24) having a first predetermined shape defined by a first critical width dimension and a minimum height dimension so that a subsequently-formed dielectric polymer layer (26) surrounds but does not cover each photoresist island (24), thereby allowing each photoresist island to be selectively removed from the one or more conductive patterns to form one or more via openings (28) in the dielectric polymer layer such that each via opening has a second predetermined shape which matches at least part of the first predetermined shape of the photoresist islands.

Abstract: A cost-effective process and structure is provided for a thermal dissipation element for semiconductor device packages incorporating antennas that can incorporate RF/EMI shielding from the antenna elements. Certain embodiments provide incorporated antenna element structures as part of the same process. These features are provided using a selectively-plated thermal dissipation structure that is formed to provide shielding around semiconductor device dies that are part of the package. In some embodiments, the thermal dissipation structure is molded to the semiconductor device, thereby permitting a thermally efficient close coupling between a device die requiring thermal dissipation and the dissipation structure itself.

Abstract: Doherty power amplifiers and devices are described with a low voltage driver stage in a carrier-path and a high voltage driver stage in a peaking-path. In an embodiment a Doherty power amplifier has a carrier-path driver stage transistor configured to operate using a first bias voltage at the driver stage output, and a final stage transistor configured to operate using a second bias voltage at the final stage output. A peaking-path driver stage transistor is configured to operate using a third bias voltage at the driver stage output, and a final stage transistor electrically coupled to the driver stage output of the peaking-path driver stage transistor is configured to operate using a fourth bias voltage at the final stage output, wherein the third bias voltage is at least twice as large as the first bias voltage.

Abstract: A packaged RF amplifier device includes input and output leads and a transistor die. The transistor die includes a transistor with a drain-source capacitance below 0.1 picofarads per watt. The device also includes a conductive connection between the transistor output terminal and the output lead, and a baseband termination circuit between the transistor output terminal and a ground reference node. The baseband termination circuit presents a low impedance to signal energy at envelope frequencies and a high impedance to signal energy at RF frequencies. The baseband termination circuit includes an inductive element, a resistor, and a capacitor connected in series between the transistor output terminal and the ground reference node. Except for a minimal impedance transformation associated with the conductive connection, the device is unmatched between the transistor output terminal and the output lead by being devoid of impedance matching circuitry between the transistor output terminal and the output lead.

Abstract: A transistor includes a trench formed in a semiconductor substrate. A conductive spacer is formed in the trench and offset from a first sidewall of the trench. A dielectric material is formed in the trench and surrounds the conductive spacer. A drift region is formed in the semiconductor substrate adjacent to the first sidewall and a first portion of a second sidewall of the trench. A drain region is formed in the drift region adjacent to a second portion of the second sidewall. A first gate region overlaps a portion of the drift region and is formed separate from the conductive spacer.

Abstract: Saturation of an A/D converter at a receiver is addressed by forcing a controlled clipping of a peak signal pulse in the analog domain and restoring the pulse using a digital algorithm within the receiver. An A/D converter saturates and clips the peak pulses in the signal. Saturated peaks are restored by an algorithm operating in a baseband digital signal processor that utilizes information related to the time intervals where clipping was applied, along with information associated with the portion of the pulse below the clipping threshold. The time interval information is available from the A/D converter or through use of a separate pulse clipping detection algorithm. Through the use of embodiments of the present invention, the effect of signal clipping on receiver performance is reduced and therefore allows for increased clipping of the received signal.

Abstract: Various embodiments relate to a level shifter circuit configured to generate a voltage output, including: a first charging path circuit; a second charging path circuit; and an enable circuit configured to enable the first charging path circuit and the second charging path circuit, wherein the voltage output is a combination of the voltage from the first charging path circuit and the second charging path circuit, the first charging path circuit charges up to a voltage limit, and the first charging path circuit charges the voltage output faster than the second charging path circuit.

Abstract: Within EMV payment specification, use of an unattended terminal to accept a payment is allowed. Creating a device that has both EMV level 1 (L1) and level 2 (L2) payment components combined with a virtual merchant creates a “card present” transaction for an on-line or e-commerce merchant. This device can be called a personal Point of Sale (pPOS). This specification discloses pPOS devices and methods that can provide for card present e-commerce transactions with a payment kernel that is local and/or remote to a pPOS device. In some embodiments, a pPOS device can include only a secure microcontroller function (MCF) and a secure element, wherein a payment kernel configured to process payment is local, remote, or split between local and remote to the device. In some embodiments, a pPOS device can further include a reader, a sensor switch, and/or a user interface function.

Abstract: A method for accurately measuring a battery temperature using a temperature sensor embodied in a battery monitoring integrated circuit is disclosed. The method includes performing calibration to estimate a thermal resistance between the battery monitoring integrated circuit and a terminal of a battery, measuring a temperature using the temperature sensor, measuring a voltage at the terminal or at a supply pin of the battery monitoring integrated circuit while a current is being used to charge or discharge the battery, calculating a power by multiplying the voltage and the current, and calculating a self-heating temperature adjustment to the temperature by multiplying the power and the thermal resistance.

Abstract: A power die package includes a lead frame having a flag with power leads on one lateral side and signal leads on one or more other lateral sides. A power die is attached to a bottom surface of the flag and electrically connected to the power leads with a conductive epoxy. A control die is attached to a top surface of the flag and electrically connected to the signal leads with bond wires. A mold compound is provided that encapsulates the dies, the bond wires, and proximal parts of the leads, while distal ends of the leads are exposed, forming a PQFN package.

Abstract: Exemplary aspects are directed to circuitry that assesses and differentiates a set of targeted data and updates a high-level bin with a numerical value indicating the number of data elements that compared successfully with a predefined value range defined for each bin. A cumulative sum of the high-level bins may then be calculated. Following, a target threshold may be compared to the cumulative sum at each bin and then providing an indication upon discovering a cumulative sum exceeding the threshold. The targeted data may be further refined by changing (through circuitry or other intervention) the predefined range values and then reprocessing the targeted data.

Abstract: In accordance with a first aspect of the present disclosure, a localization device is provided, comprising: an ultra-wideband, UWB, communication unit configured to transmit a localization signal to an external device and to receive a response signal from the external device; an angle of arrival measurement unit configured to measure an angle at which the response signal is received; an orientation sensor configured to sense an orientation of the localization device; and a processing unit configured to determine if an angle at which the localization signal is received by the external device, an orientation of the external device, said orientation of the localization device, and said angle at which the response signal is received meet a predefined relationship. In accordance with a second aspect of the present disclosure, a corresponding method of operating a localization device is conceived.

Abstract: A transceiver has a first interface supplied by a first supply voltage to interface with external devices operating in a first supply domain and a second interface supplied by a second supply voltage and adapted to interface to an external communication bus operating in a second supply domain. The transceiver has a first internal communication link, which is adapted to transfer transmit data generated by an external device operating in the first supply domain, from the first interface to the second interface, and a second internal communication link, which is adapted to transfer transmit data be supplied from the external communication bus operating in the second supply domain from the second interface to the first interface.

Abstract: A control system, that includes a primary controller and various auxiliary controllers, is configured to facilitate a built-in self-test (BIST) of a system-on-chip (SoC). The primary controller is configured to initiate a BIST sequence associated with the SoC. Based on the BIST sequence initiation, each auxiliary controller is configured to schedule execution of various self-test operations on various functional circuits, various memories, and various logic circuits of the SoC by various functional BIST controllers, various memory BIST controllers, and various logic BIST controllers of the SoC, respectively. Based on the execution of the self-test operations, each auxiliary controller further generates various status bits with each status bit indicating whether at least one functional circuit, at least one memory, or at least one logic circuit is faulty. Based on the status bits generated by each auxiliary controller, a fault diagnosis of the SoC is initiated.