Abstract: An image sensor comprises a pixel array having a color filter array including a minimal repeating unit, where the minimal repeating unit consists of 4×4 pixels including two red pixels, four green pixels, two blue pixels, and eight clear pixels. When clear pixels are saturated and blooming, a blue pixel is affected by three or two clear pixels, but not four clear pixels.

Abstract: Low power event driven pixels and reset control circuits for the same are disclosed herein. In one embodiment, an event driven pixel comprises a photosensor; a photocurrent-to-voltage converter coupled to the photosensor; and a difference circuit coupled to the photocurrent-to-voltage converter. The difference circuit includes a source follower transistor and is configured to generate a signal at a gate of the source follower transistor that is based on a voltage output from the photocurrent-to-voltage converter. The difference circuit is further configured to output a difference signal in response to assertion of a row select signal. The event driven pixel can further include a reset control circuit coupled to the difference circuit and configured to initialize the difference circuit, and to reset the difference circuit when the difference signal output from the event driven pixel indicates a change in the voltage greater than a threshold amount.

Abstract: Fixed pattern noise (FPN) reduction techniques in image sensors operated with pulse illumination are disclosed herein. In one embodiment, a method includes, during a first sub-exposure period of a frame, (a) operating a first tap of a pixel to capture a first signal corresponding to first charge at a first floating diffusion, the first charge corresponding to first light incident on a photosensor, and (b) operating a second tap of the pixel to capture a first parasitic signal corresponding to FPN at a second floating diffusion. The method further includes, during a second sub-exposure period of the frame, (a) operating the second tap to capture a second signal corresponding to second charge at the second floating diffusion, the second charge corresponding to second light incident on the photosensor, and (b) operating the first tap to capture a second parasitic signal corresponding to FPN at the first floating diffusion.

Abstract: An arithmetic logic unit (ALU) includes a front end latch stage coupled to a Gray code (GC) generator to latch GC outputs, a signal latch stage coupled to latch outputs of the front end latch stage, a GC to binary stage coupled to generate a binary representation of the GC outputs, an adder stage including first inputs coupled to receive outputs of the GC to binary stage, a pre-latch stage coupled to latch outputs of the adder stage, and a feedback latch stage coupled to latch outputs of the pre-latch stage in response to a feedback latch enable signal. The feedback latch enable signal is one of a correlated multiple sampling (CMS) feedback enable signal and a non-CMS feedback enable signal. The ALU is configured to perform CMS calculations in response to the CMS feedback enable signal and perform non-CMS calculations in response to the non-CMS feedback enable signal.

Abstract: An imaging device includes a pixel array with 2×2 pixel circuits arranged in rows and columns. Each 2×2 pixel circuit includes 4 photodiodes. Bitlines are coupled to the 2×2 pixel circuits and a color filter array is disposed over photodiodes of the pixel array. The color filter array includes color filters having a first color, color filters having a second color, color filters having a third color. The photodiodes of each 2×2 pixel circuits are covered by one of the color filters. Photodiodes covered by color filters having the first color and photodiodes covered by color filters having the second color are configured to provide non-phase detection (non-PD) information. Photodiodes covered by color filters having the third color are configured to provide phase detection (PD) information. Half of the 2×2 pixel circuits have the photodiodes covered by color filters having the third color.

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a bias voltage source and the floating diffusion. A drain of the reset transistor is coupled to the bias voltage source. The reset transistor is configured to be switched in response to a reset control signal. A lateral overflow integration capacitor (LOFIC) including an insulating region is disposed between a first metal electrode and a second metal electrode. The first metal electrode is coupled to the drain of the reset transistor. The second metal electrode is coupled to a source of the reset transistor and selectively coupled to the floating diffusion.

Abstract: A pixel circuit includes a photodiode configured to photo generate image charge in response to incident light, a floating diffusion coupled to receive the image charge from the photodiode, a transfer transistor coupled between the photodiode and the floating diffusion to transfer the image charge from the photodiode to the floating diffusion, a reset transistor coupled between a variable voltage source and the floating diffusion, wherein the reset transistor is configured to be switched in response to a reset control signal, and a lateral overflow integration capacitor (LOFIC) coupled between the variable voltage source and the floating diffusion. The variable voltage source is configured to output a high-voltage level during a high conversion gain (HCG) reset signal readout and an HCG image signal readout, and a mid-voltage level during a LOFIC image signal readout and a LOFIC reset signal readout.

Abstract: A chip-level camera includes an image sensor; a concave L1 lens element on an inside surface of a first substrate; a convex L2 lens element on a first surface of a second substrate; a diaphragm stop on a second surface of the second substrate or on a first surface of a third substrate, the diaphragm stop between the second and third substrates; a convex L3 lens element on a second surface of the third substrate spaced from the image sensor; a first spacer holding first substrate at a predetermined distance from the second substrate; and a second spacer holding the second substrate a predetermined distance from the image sensor. In embodiments, lens element L1 has concave aspheric radius of R1, and lens L2 convex aspheric radius of R2, such that 1.3<ABS(R2/R1)<2.2 and/or lens L3 has convex aspheric radius R3, where 1.1<ABS(R3/R1)<2.4.

Abstract: An image sensor includes a photodiode disposed in a semiconductor substrate having a first surface and a second surface opposite to the first surface. A floating diffusion is disposed in the semiconductor substrate. A transfer transistor is configured for coupling the photodiode to the floating diffusion. The transfer transistor includes a vertical transfer gate extending a first depth in a depthwise direction from the first surface into the semiconductor substrate. A transistor is coupled to the floating diffusion. The transistor includes: a planar gate disposed proximate to the first surface of the semiconductor substrate; and a plurality of vertical gate electrodes, each extending a respective depth into the semiconductor substrate from the planar gate in the depthwise direction. The respective depth of at least one of the plurality of vertical gate electrodes is the same as the first depth of the vertical transfer gate.

Abstract: A pixel circuit includes: a phototransistor configured to receive, by one region of a source and a drain, inflow of photo-carriers generated by light entering a substrate, and configured to output a voltage signal from the one region; and a blocking layer provided on another region of the drain and the source and on a side of a channel far from a surface, and configured to prevent the photo-carriers from directly flowing into the other region. The phototransistor causes a sub-threshold current to flow between the source and the drain in a pinch-off state. Each of the source and the drain of the phototransistor is periodically reset to a reset voltage. The reset voltage is set to a voltage between a voltage at which a dark current of the phototransistor becomes zero and a voltage at which a bias voltage of the phototransistor becomes zero.

Abstract: A pixel circuit includes: a photodiode configured to operate in a photovoltaic mode and to accumulate charges corresponding to an incident light amount; a reset transistor configured to reset the accumulated charges of the photodiode; and a peak hold circuit configured to hold an output corresponding to the accumulated charges of the photodiode, the peak hold circuit including a peak hold transistor connected to an output end of the photodiode, a switching transistor configured to turn on/off an output of the peak hold transistor, and a holding capacitor configured to hold an output of the switching transistor. The peak hold transistor operates in a state where no carrier charge or only one carrier charge is present on a channel.

Abstract: Transistors, electronic devices, and methods are provided. Transistors include a gate trench formed in a semiconductor substrate and extending to a gate trench depth, and a source and a drain formed as doped regions in the semiconductor substrate and having a first conductive type. The source and the drain are formed along a channel length direction of the transistor at a first end and a second end of the gate trench, respectively, and the source and the drain each includes a first doped region and a second doped region extending away from the first doped region. The second doped region extends to a depth in the semiconductor substrate deeper than the first doped region relative to a surface of the semiconductor substrate.

Abstract: A method of operating an imaging system is described. The method comprising transferring first image charges accumulated during a long exposure period of a first image frame to respective floating diffusion regions of a first pixel and a second pixel, reading out long exposure image signals from the respective floating diffusion regions to a first storage capacitor associated with the first pixel and a second storage capacitor associated with the second pixel, transferring second image charges accumulated during a short exposure period of the first image frame to the respective floating diffusion regions of the first pixel and the second pixel, reading out a short exposure image signal from a corresponding one of the floating diffusion regions to the second storage capacitor, and reading out storage charge signals from the first storage capacitor and the second storage capacitor to generate image data for the first image frame.

Abstract: An imaging system comprising a phase-detection image sensor comprising a plurality of phase-detection pixel units and a processor configured to: interpolate a green image to obtain a full resolution interpolated green image including defocused portions having artifacts and in-focus portions having sharp image, low-pass filter the full resolution interpolated green image to obtain a blurred image of the interpolated green image, combine the full resolution interpolated green image and the blurred image of the full resolution interpolated green image to obtain a corrected full resolution interpolated green image, where the artifacts of the defocused portions of the full resolution interpolated green image are removed, and the sharp image of the in-focus portions of the full resolution interpolated green image is unaffected.

Abstract: Electrical Phase Detection Auto Focus. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes configured to receive incoming light through an illuminated surface of the semiconductor material. The plurality of pixels includes at least one autofocusing phase detection (PDAF) pixel having: a first subpixel without a light shielding, and a second subpixel without the light shielding. Autofocusing of the image sensor is at least in part determined based on different electrical outputs of the first subpixel and the second sub pixels.

Abstract: An image processing method and a device configured to implement the same are disclosed. The device comprises: a hybrid imaging device configured to obtain optical input; and a processing device in signal communication with the hybrid imaging device. The processing device comprises: a motion detection circuit that performs feature tracking based on a first component of an obtained optical input; a motion estimation circuit that performs motion compensation based on output of the motion detection unit; a frame reconstruction circuit that reconstructs image frame based on both the output of the motion estimation unit and a second component of the optical input; and an output unit that outputs image frame at a predetermined global frame rate.

Abstract: A pixel of an image sensor includes a photodiode, a reset transistor, a peak hold transistor, and a first capacitor and a second capacitor. The pixels include, a first mode in which the noise and image output voltages of the photodiode are held in the first and second capacitors, respectively, and a second mode in which the output voltage of the photodiode in a state where the reset transistor is turned on to reset the photodiode is held in the first capacitor or the second capacitor. In the first mode, an image signal corresponding to the light incident amount of the photodiode and a noise signal when the light incident amount is relatively low are obtained. In the second mode, a noise signal when the light incident amount of the photodiode is relatively high is obtained.

Abstract: An image sensor comprises a first photodiode, a second photodiode, and a deep trench isolation structure. The first photodiode and the second photodiode are each disposed within a semiconductor substrate. The first photodiode is adjacent to the second photodiode. The deep trench isolation structure has a varying depth disposed within the semiconductor substrate between the first photodiode and the second photodiode. The DTI structure extends the varying depth from a first side of the semiconductor substrate towards a second side of the semiconductor substrate. The first side of the semiconductor substrate is opposite of the second side of the semiconductor substrate.

Abstract: A pixel cell is formed on a semiconductor substrate having a front surface. The pixel cell includes a photodiode, a floating diffusion region, and a transfer gate. The photodiode is disposed in the semiconductor substrate. The floating diffusion region includes a first doped region disposed in the semiconductor substrate, wherein the first doped region extends from the front surface to a first junction depth in the semiconductor substrate. The transfer gate is configured to selectively couple the photodiode to the floating diffusion region controlling charge transfer between the photodiode and the floating diffusion region. The transfer gate includes a planar gate disposed on the front surface of the semiconductor substrate and a pair of vertical gate electrodes. Each vertical gate electrode extending a gate depth from the planar gate into the semiconductor substrate. The first junction depth is greater than the gate depth.

Abstract: An image sensor is an image sensor including a plurality of pixels. Each of the pixels includes a photodiode configured to generate charges based on a light incident amount, a reset transistor configured to reset the photodiode by supplying a reset voltage to the photodiode, a first capacitor configured to hold an output voltage of the photodiode immediately after the reset, and a second capacitor configured to hold the output voltage of the photodiode after a predetermined exposure period. An image signal is obtained from the voltage held by the first capacitor and the voltage held by the second capacitor.