Patents Assigned to OmniVision Technologies, Inc.
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Patent number: 10827143Abstract: An image sensor includes a pixel array including a plurality of pixels. A bit line is coupled to a column of pixels of the pixel array. The bit line is separated in to a plurality of portions coupled to the column of pixels. The portions of the bit line are electrically isolated from one another. A readout circuit is coupled to a first portion of the bit line coupled to a first portion of rows of pixels from the column of pixels to read image data from the first portion of rows of pixels from the column of pixels. The readout circuit is further coupled to a second portion of the bit line coupled to a second portion of rows of pixels from the column of pixels to read image data from the second portion of rows of pixels from the column of pixels.Type: GrantFiled: December 17, 2018Date of Patent: November 3, 2020Assignee: OmniVision Technologies, Inc.Inventor: Hiroaki Ebihara
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Patent number: 10826470Abstract: A ramp generator includes an integrator including a first stage having first and second inputs and first and second outputs, and a second stage including first and second transistors coupled between a power supply rail and ground. A node between the first and second transistors is coupled to the output of the integrator amplifier. A control terminal of the first transistor is coupled to the first output of the first stage, and a control terminal of the second transistor is coupled to the second output of the first stage. A first current flows from the output to ground during a ramp event in the ramp signal generated from the output. Trimming circuitry is coupled to the output of the integrator amplifier to provide a second current to the output of the integrator amplifier in response to trimming inputs. The second current substantially matches the first current.Type: GrantFiled: March 13, 2019Date of Patent: November 3, 2020Assignee: OmniVision Technologies, Inc.Inventors: Liang Zuo, Rui Wang, Hiroaki Ebihara, Nijun Jiang
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Patent number: 10819927Abstract: An imaging system comprises an image sensor and black level correction (BLC) circuitry. The image sensor includes an image pixel array adapted to generate an image signal in response to incident light and a dark pixel array adapted to generate a black reference signal representative of a black level value of the image sensor. The BLC circuitry is adapted to adjust the image signal of the image pixel array based, at least in part, on the black reference signal of the dark pixel array. The BLC circuitry includes a plurality of measurement circuits to readout the black reference signal from the dark pixel array to determine the black level value of the image sensor. The BLC circuitry also includes a plurality of calculation circuits to calculate a BLC value based, at least in part, on the black level value determined from the plurality of measurement circuits.Type: GrantFiled: July 2, 2019Date of Patent: October 27, 2020Assignee: OmniVision Technologies, Inc.Inventor: Gabor Mikes
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Patent number: 10819936Abstract: An image sensor includes a pixel array including a plurality of pixels. Each pixel is coupled to generate image data in response to incident light. A bit line is coupled to a column of pixels of the pixel array and is separated into first and second portions. Each portion is coupled to a corresponding portion of rows of pixels of the pixel array. A readout circuit coupled to the bit line to read out the image data from the pixel array. The readout circuit includes a cascode device coupled between the first and second portions of the bit line. The cascode device is coupled to be biased to electrically separate the first and second portions of the bit line from one another such that a capacitance of each portion of the bit line does not affect a settling time of an other portion of the bit line.Type: GrantFiled: February 13, 2019Date of Patent: October 27, 2020Assignee: OmniVision Technologies, Inc.Inventors: Hiroaki Ebihara, Zheng Yang, Rui Wang, Teijun Dai
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Publication number: 20200335534Abstract: An optical element comprising a transparent substrate and an anti-reflective coating, wherein the anti-reflective coating further comprises at least a transparent, high refractive index layer and a transparent, low refractive index layer, wherein the high refractive index layer is in contact with the low refractive index layer; and wherein the high refractive index layer is situated at an interface between the anti-reflective coating and air. Further, the low refractive index layer may be silicon oxide; the high refractive index layer may be tantalum oxide or silicon nitride.Type: ApplicationFiled: March 12, 2020Publication date: October 22, 2020Applicant: OmniVision Technologies, Inc.Inventors: Chun-Sheng Fan, Chen-Wei Tsai, Wei-Feng Lin
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Patent number: 10811453Abstract: An image sensor includes a plurality of photodiodes arranged in rows and columns of a pixel array that is disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of deep trench isolation (DTI) structures are formed laterally with respect to the photodiodes on the backside of the semiconductor substrate. The plurality of DTI structures are arranged between adjacent photodiodes. A plurality of pillar structures extend from a metal grid proximate to the backside and is formed proximate to the backside and aligned with the DTI structures.Type: GrantFiled: November 1, 2019Date of Patent: October 20, 2020Assignee: OmniVision Technologies, Inc.Inventors: Seong Yeol Mun, Bill Phan, Alireza Bonakdar
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Patent number: 10790322Abstract: An image sensor include a semiconductor substrate, a first epitaxial layer, a second epitaxial layer, a plurality of photodiodes, and a plurality of pixel isolation structures. The first epitaxial layer is formed on the semiconductor substrate, and the second epitaxial layer is formed on the first epitaxial layer. Each photodiode includes a first diffusion region formed in the first epitaxial layer and a second diffusion region formed in the second epitaxial layer. The second diffusion region is extended through the second epitaxial layer and electrically coupled to the first diffusion region. Each pixel isolation structure include a first isolation structure formed between adjacent first diffusion regions in the first epitaxial layer and a second isolation structure formed between adjacent second diffusion regions in the second epitaxial layer. The second isolation structure is extended through the second epitaxial layer to connect to the first isolation structure.Type: GrantFiled: August 19, 2019Date of Patent: September 29, 2020Assignee: OmniVision Technologies, Inc.Inventors: Qin Wang, Gang Chen
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Patent number: 10775413Abstract: A method of increasing uniformity in light from a light source at a plurality of targets of the light includes locating a plurality of movable aperture elements between the light source and the targets. Each aperture element defines an aperture through which the light passes from the light source to an associated one of the plurality of targets associated with the aperture element along a longitudinal axis of the aperture element. The method also includes moving at least one of the aperture elements along its longitudinal axis to change a feature of light incident on the target associated with the aperture element.Type: GrantFiled: October 5, 2016Date of Patent: September 15, 2020Assignee: OmniVision Technologies, Inc.Inventors: Chih-Pin Jen, Ming-Chang Yang, Sheng-Kuai Yang
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Patent number: 10761385Abstract: A liquid crystal on silicon (LCOS) panel comprises: a silicon substrate having silicon circuit within the silicon substrate; a plurality of metal electrodes disposed on the silicon substrate, where the plurality of metal electrodes are periodically formed on the silicon substrate; a dielectric material disposed in and filling gaps between adjacent metal electrodes; and an oxide layer disposed on the plurality of metal electrodes and the dielectric material in the gaps between adjacent metal electrodes; where the refractive index of the dielectric material is higher than the refractive index of the oxide layer.Type: GrantFiled: December 22, 2017Date of Patent: September 1, 2020Assignee: OmniVision Technologies, Inc.Inventors: Ming Zhang, Libo Weng, Cheng Zhao, Yin Qian, Chia-Chun Miao, Zhiqiang Lin, Dyson H. Tai
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Patent number: 10753967Abstract: An apparatus configured to measure electromagnetic radiation coupled from an image sensor integrated circuit (IC) to a nearby cell phone antenna has an image sensor PCB with the image sensor IC on a first side and image sensor decoupling capacitors disposed on a second side, the image sensor PCB disposed within a shielding box. The apparatus also has an image processor PCB with an image processor IC on a first side and at least one image processor decoupling capacitors, the image processor IC electrically coupled to the image sensor IC. The image processor IC is located outside the shielding box, and the at least one image processor decoupling capacitor is within the shielding box. In embodiments, the decoupling capacitors are shielded with separate, additional, metal covers.Type: GrantFiled: November 27, 2018Date of Patent: August 25, 2020Assignee: OmniVision Technologies, Inc.Inventors: Qianyi Zhao, Xiaojun Zhang, Pan-Xun Jiang, Bao-Hua Xu, Heng Fan
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Patent number: 10750111Abstract: An image sensor includes a pixel array including a plurality of pixels. A bit line coupled to a column of pixels is separated in to a plurality of electrically portions that are coupled to corresponding portions of rows of the pixel array. A first switching circuit of a readout circuit is coupled to the bit line. A first switching circuit is configured to couple a bit line current source to the bit line to provide a DC current coupled to flow through the bit line and through the first switching circuit during a readout operation of a pixel coupled to the bit line. A second switching circuit is configured to couple and ADC to the bit line during the readout operation of the pixel. Substantially none of the DC current provided by the bit line current source flows through the second switching circuit during the readout operation of the pixel.Type: GrantFiled: December 17, 2018Date of Patent: August 18, 2020Assignee: OmniVision Technologies, Inc.Inventors: Hiroaki Ebihara, Rui Wang, Zheng Yang, Eiichi Funatsu
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Patent number: 10750108Abstract: An imaging system comprises an image pixel array, a dark pixel array, and a controller. The image pixel array includes a plurality of pixel clusters adapted to generate image signals. The dark pixel array is adapted to generate one or more black reference signals corresponding to a global black level value of the imaging system. The controller includes logic that when executed by the controller causes the system to perform operations including determining local black level values for each of the pixel clusters and correcting a first image signal included in the image signals based, at least in part, on the global black level and a first local black level value included in the local black level values.Type: GrantFiled: September 25, 2018Date of Patent: August 18, 2020Assignee: OmniVision Technologies, Inc.Inventor: Gabor Mikes
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Patent number: 10750061Abstract: An endoscope comprises a FPC (flexible printed circuit) having a first side and a second side, where the FPC comprises a first head part, a body part, and tail part. At least one solder pad is on the first side of the first head part, and at least one solder pad is on the first side of the body part. The endoscope further comprises a camera module mounted on the first side of the body part and a first LED (light emitting diode). A first side of the first LED is mounted on the first side of the first head part and a second side of the first LED is mounted on a first side of the camera module, while the first head part is bent. The second side of the body part is mounted on an end of a flexible fiber, and the tail part of the FPC is bent to mount on the flexible fiber.Type: GrantFiled: September 15, 2017Date of Patent: August 18, 2020Assignee: OmniVision Technologies, Inc.Inventor: Chun-Sheng Fan
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Patent number: 10741593Abstract: A pixel cell includes a photodiode disposed in a semiconductor material layer to accumulate image charge photogenerated in the photodiode in response to incident light. A storage transistor is coupled to the photodiode to store the image charge photogenerated in the photodiode. The storage transistor includes a storage gate disposed proximate a first surface of the semiconductor material layer. The storage gate includes a pair of vertical transfer gate (VTG) portions. Each one of the pair of VTG portions extends a first distance into the semiconductor material layer through the first surface of the semiconductor material layer. A storage node is disposed below the first surface of the semiconductor material layer and between the pair of VTG portions of the storage gate to store the image charge transferred from the photodiode in response to a storage signal.Type: GrantFiled: May 24, 2019Date of Patent: August 11, 2020Assignee: OmniVision Technologies, Inc.Inventors: Keiji Mabuchi, Sohei Manabe
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Patent number: 10739838Abstract: A smart camera system including an image sensor and a controller is presented. The image sensor generates video data that is initially at a bit rate of a pre-determined bit rate value. The controller is coupled to the image sensor to transmit the video data. The controller includes a processor operating at a clock rate of a first frequency. The processor is coupled to memory, the memory including instructions, which when executed by the controller causes the smart camera system to perform operations. The operations include dynamically scaling the clock rate of the processor to an adjustment frequency in response to receiving an input to change the bit rate of the video data. The adjustment frequency for the clock rate of the processor based, at least in part, on the input bit rate value. The operations further include changing the bit rate to the input bit rate value.Type: GrantFiled: December 28, 2017Date of Patent: August 11, 2020Assignee: OmniVision Technologies, Inc.Inventors: Jiyan Wu, Jun Wei, Haiyang Fang, Shunbo Mou
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Patent number: 10739646Abstract: A reflective semiconductor device includes integrated circuitry disposed in a semiconductor layer. A first plurality of mirrors is formed in a mirror layer over the semiconductor layer, and each of the first plurality of mirrors is spaced apart from one another by at least a uniform width. A thin dielectric film layer covers sidewalls of the first plurality of mirrors and the semiconductor layer in the regions between the spaced apart first plurality of mirrors. A second plurality of mirrors are formed in the mirror layer between the thin dielectric film layer covered sidewalls of the first plurality of mirrors and over the thin dielectric film layer covering the semiconductor layer. Each one of the first and second plurality of mirrors has the uniform width, and is coupled to the integrated circuitry disposed in the semiconductor layer.Type: GrantFiled: April 30, 2019Date of Patent: August 11, 2020Assignee: OmniVision Technologies, Inc.Inventors: Ming Zhang, Yin Qian, Libo Weng, Dyson H. Tai, Chia-Ying Liu, Chia-Jung Liu
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Publication number: 20200249536Abstract: A novel liquid crystal on silicon (LCoS) device includes an array of pixel electrodes having a highly reflective material formed thereon. In a particular embodiment, the pixel electrodes are aluminum and have silver pixel mirrors electroplated thereon. In a more particular embodiment, the LCoS device includes auxiliary circuitry facilitating the electroplating of the pixel mirrors.Type: ApplicationFiled: February 4, 2019Publication date: August 6, 2020Applicant: OmniVision Technologies, Inc.Inventor: Chun-Sheng (CS) Fan
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Patent number: 10734437Abstract: A chip-scale packaging process for wafer-level camera manufacture includes aligning an optics component wafer with an interposer wafer having a photoresist pattern that forms a plurality of transparent regions, bonding the aligned optics component wafer to the interposer wafer, and dicing the bonded optics component wafer and interposer wafer such that each optics component with interposer has a transparent region. The process further includes dicing an image sensor wafer, aligning the pixel array of each image sensor with the transparent region of a respective optics component with interposer, and bonding each image sensor to its respective optics component with interposer. Each interposer provides alignment between its respective optics component center and its respective pixel array center of the image sensor based on the respective transparent region. The interposer further provides a back focal length for focusing light from the optics component onto a top surface of the pixel array.Type: GrantFiled: February 4, 2019Date of Patent: August 4, 2020Assignee: OmniVision Technologies, Inc.Inventors: Teng-Sheng Chen, Chia-Yang Chang, Yi Qin
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Patent number: 10735682Abstract: An image sensor has multiple blocks each with multiple pixels; each block uses a separate analog-to-digital converter (ADC). The ADCs feed digitized images into an image DRAM, and the image DRAM feeds digitized images to an alignment buffer in turn providing images to an image processor. The ADCs feed digitized image data into the image DRAM in hyperlong words, using staggered, overlapping, word lines to write each hyperlong word. A method of imaging includes exposing a photosensor array to light, reading pixels of the array in sequence within each block of pixels, one pixel in each block simultaneously; and digitizing pixels in separate ADCs for each block. Digitized pixels are written to image DRAM as hyperlong words with one pixel from each block in parallel using staggered, overlapping, word lines. Pixels are read from the image DRAM into an alignment buffer and thence to the image processor.Type: GrantFiled: November 14, 2018Date of Patent: August 4, 2020Assignee: OmniVision Technologies, Inc.Inventors: Chia-Ming Chen, Jong-sik Na
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Publication number: 20200243384Abstract: A chip comprises a semiconductor substrate having a first side and a second side opposite to the first side, a plurality of conductive metal patterns formed on the first side of the semiconductor substrate, a plurality of solder balls formed on the first side of the semiconductor substrate, and at least one code pattern formed using laser marking on the first side of the semiconductor substrate in a space free from the plurality of conductive metal patterns and the plurality of solder balls, wherein the at least one code pattern is visible from a backside of the chip, the at least one code pattern represents a binary number having four bits; and the binary number represents a decimal number to represent a tracing number of the chip.Type: ApplicationFiled: January 25, 2019Publication date: July 30, 2020Applicant: OmniVision Technologies, Inc.Inventors: Wei-Feng Lin, Chi-Chih Huang