Abstract: A wafer-level bonding method for fabricating wafer level camera lenses is disclosed. The method includes: providing a lens wafer including lenses arranged in an array and a sensor wafer including sensors arranged in an array; measuring and analyzing an FFL of each lens to obtain a corresponding FFL compensation value for each lens; forming a thin transparent film (TTF) on each sensor of the sensor wafer, and the thickness of TTF is determined by the FFL compensation value of the corresponding lens; aligning and bonding the lens wafer with the sensor wafer having TTFs formed thereon. Since the focal length of each lens is adjusted to compensate the FFL of the lens by adding a TTF of transparent optical material with an index of refraction that is similar to the index of refraction of the sensor cover glass, the FFL variation of each camera lens can be reduced.

Abstract: Systems and methods for image data fusion include providing first and second sets of image data corresponding to an imaged first and second scene respectively. The scenes at least partially overlap in an overlap region, defining a first collection of overlap image data as part of the first set of image data, and a second collection of overlap image data as part of the second set of image data. The second collection of overlap image data is represented as a plurality of image data subsets such that each of the subsets is based on at least one characteristic of the second collection, and each subset spans the overlap region. A fused set of image data is produced by an image processor, by modifying the first collection of overlap image data based on at least a selected one of, but less than all of, the image data subsets.

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. An contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the contact etch stop layer.

Abstract: An example ramp analog-to-digital converter (ADC) for generating at least one bit of a digital signal includes a modified ramp signal generator, a comparator, and a control circuit. The modified ramp signal generator receives a ramp signal and generates a modified ramp signal in response thereto. The comparator compares an analog input with the modified ramp signal. The control circuit controls the modified ramp signal generator, such that the analog input is converted a variable M number of times for each period of the ramp signal. The number M is dependent on a magnitude of the analog input. In one example, the number M is greater for analog inputs of a lower magnitude, such that the analog inputs of the lower magnitude are converted more times than analog inputs of a higher magnitude.

Abstract: An image sensor pixel includes a photosensitive region and pixel circuitry. The photosensitive region accumulates an image charge in response to light incident upon the image sensor. The pixel circuitry includes a transfer-storage transistor, a charge-storage area, an output transistor, and a floating diffusion region. The transfer-storage transistor is coupled between the photosensitive region and the charge-storage area. The output transistor has a channel coupled between the charge-storage area and the floating diffusion region and has a gate tied to a fixed voltage potential. The transfer-storage transistor causes the image charge to transfer from the photosensitive region to the charge-storage area and to transfer from the charge-storage area to the floating diffusion region.

Abstract: A color image sensor includes a pixel array including CFA overlaying an array of photo-sensors for acquiring color image data. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first group of photo-sensors generate first color signals of a first color channel and the second group of photo-sensors generate second color signals of a second color channel. The color image sensor further includes a color signal combiner circuit (“CSCC”) coupled to receive the first and second color signals output from the pixel array. The CSCC includes a combiner coupled to combine the first and second colors signals to generate third color signals of a third color channel. An output port is coupled to the CSCC to output the color image data.

Abstract: A switch circuit including structures to reduce the effects of charge injection. In an embodiment, a first transistor of the switch circuit is to receive a first signal and first and second dummy transistors of the switch circuit are each to receive a second signal, wherein the first transistor is connected between the first and second dummy transistors. The second signal is complementary to the first signal. In another embodiment, the first transistor, the first dummy transistor and the second dummy transistors are each connected via respective body connections to a first low supply voltage.

Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion (“FD”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The FD region is disposed in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the FD region to selectively transfer the image charge from the photosensitive element to the FD region. The transfer device includes a gate, a buried channel dopant region and a surface channel region. The gate is disposed between the photosensitive element and the FD region. The buried channel dopant region is disposed adjacent to the FD region and underneath the gate. The surface channel region is disposed between the buried channel dopant region and the photosensitive element and disposed underneath the gate.

Abstract: A backside illuminated imaging sensor includes a semiconductor substrate having a front surface and a back surface. The semiconductor substrate has at least one imaging array formed on the front surface. The imaging sensor also includes a carrier substrate to provide structural support to the semiconductor substrate, where the carrier substrate has a first surface coupled to the front surface of the semiconductor substrate. A re-distribution layer is formed between the front surface of the semiconductor substrate and the second surface of the carrier substrate to route electrical signals between the imaging array and a second surface of the carrier substrate.

Abstract: An example image sensor system includes an image sensor having a first terminal and a host controller coupled to the first terminal. Logic is included in the image sensor system, that when executed transfers clock signals from the host controller to the image sensor through the first terminal of the image sensor and also transfers one or more digital control signals between the image sensor and the host controller through the same first terminal.

Abstract: A system, method and apparatus implementing a multiple-row concurrent readout scheme for high-speed CMOS image sensor with backside illumination are described herein. In one embodiment, the method of operating an image sensor starts acquiring image data within a color pixel array and the image data from a first set of multiple rows in the color pixel array is then concurrently readout. Concurrently reading out the image data from the first set of multiple rows includes concurrently selecting a first portion of the image data from the first set by first readout circuitry and a second portion of the image data from the first set by second readout circuitry. The first and second portions of the image data from the first set are different and the first and second readout circuitries are also different. Other embodiments are also described.

Abstract: A multiple image sensor image acquisition system includes a clock control unit to generate a synchronization clock signal. The synchronization clock signal has a prolonged constant cycle during which the synchronization clock signal is held at a constant level for a period of time corresponding to multiple clock cycles. A first image sensor is coupled with the clock control unit to receive the synchronization clock signal and has a first synchronization unit that is operable to synchronize operation for the first image sensor based on detection of an end of the prolonged constant cycle. A second image sensor is coupled with the clock control unit to receive the synchronization clock signal and has a second synchronization unit that is operable to synchronize operation for the second image sensor based on detection of the end of the prolonged constant cycle. The image sensors are synchronized operationally.

Abstract: A novel image sensor includes a pixel array, a row control circuit, a test signal injection circuit, a sampling circuit, an image processing circuit, a comparison circuit, and a control circuit. In a particular embodiment, the test signal injection circuit injects test signals into the pixel array, the sampling circuit acquires pixel data from the pixel array, and the comparison circuit compares the pixel data with the test signals. If the pixel data does not correspond to the test signals, the comparison circuit outputs an error signal. Additional comparison circuits are provided to detect defects in the control circuitry of an image sensor.

Abstract: An apparatus includes an image sensor module with a lens stack disposed on the image sensor module. A protective tube is disposed on the image sensor module and encloses the lens stack. The protective tube includes an outer wall having a snap-in latch element disposed thereon. A metal housing encloses the protective tube. The metal housing includes a housing foot and inner wall having an opposite snap-in latch element disposed thereon. The image sensor module is adapted to be secured between the housing foot of the metal housing and the protective tube when the opposite snap-in latch element of the metal housing is engaged with the snap-in latch element of the protective tube.

Abstract: Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle.

Abstract: An integrated die-level camera system and method of making the camera system include a first die-level camera formed at least partially in a die. A second die level camera is also formed at least partially in the die. Baffling is formed to block stray light between the first and second die-level cameras.

Abstract: Arrayed imaging systems include an array of detectors formed with a common base and a first array of layered optical elements, each one of the layered optical elements being optically connected with a detector in the array of detectors.

Abstract: Methods, system and apparatuses for carrier frequency offset estimation are disclosed. The method includes: receiving a preamble sequence rn with a correlator and correlating the preamble sequence with a locally stored Barker code bn to obtain a correlation result cn; extracting peak values from every L points in cn to form a peak value sequence xn, L being a length of a Barker code that corresponds to the sampling rate; performing frequency offset estimation to xn by using at least two frequency offset estimation apparatuses, the at least two frequency offset estimation apparatuses adopting different delay parameters D; and inputting the results output from the at least two frequency offset estimation apparatuses into a frequency offset combination module to calculate a final carrier frequency offset estimate, whereby accurate frequency estimation can be achieved and an appropriate acquisition range of frequency offset can be ensured.

Abstract: Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first clear hard mask layer and the second hard mask layer formed thereon, a second color filter having the first clear hard mask layer formed thereon, and a third color filter having no clear hard mask layer formed thereon. Other embodiments are disclosed and claimed.

Abstract: An apparatus includes an image sensor having N image sensor regions arranged thereon. A lens array having a including N lens structures is disposed proximate to the image sensor. Each one of the N lens structures is arranged to focus a single image onto a respective one of the N image sensor regions. The N lens structures include a first lens structure having a first focal length and positioned the first focal length away from the respective one of the N image sensor regions. A second lens structure having a second focal length is positioned the second focal length away from the respective one of the N image sensor regions. A third lens structure having a third focal length is positioned the third focal length away from the respective one of the N image sensor regions. The first, second and third focal lengths are different.