Abstract: An optical element and image capture lens structure. The optical element includes a substrate and an optical component with at least one effective area and non-effective area, formed on the substrate, wherein the non-effective area has a rough surface. The image capture lens structure includes a substrate, an optical component formed on the substrate, and a spacer with a micro structure, attached to the substrate by an adhesive, wherein the micro structure is located between the adhesive and the optical component to prevent the overflow of the adhesive.

Abstract: The invention provides a method for fabricating a camera module. An exemplary embodiment of the method for fabricating a camera module comprises providing plurality of lens sets. A dry film layer is formed on the plurality of lens sets. The dry film layer is patterned to form a plurality of dry film patterns respectively attaching to a plurality of lens sets. The plurality of lens sets are separated. A lens set separated from the plurality of lens sets is bonded to an image sensor device chip. The dry film pattern on the lens set is removed.

Abstract: An image sensor includes a two-dimensional array of pixels having multiple column outputs and an output circuit connected to each column output. Each output circuit is configured to operate concurrent sample and read operations. A timing generator outputs a column address sequence that is received by a column decoder that is electrically connected to each output circuit. The timing generator suspends the output of the column address sequence during a sample operation and resumes the output of the column address sequence at the end of the sample operation.

Abstract: Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.

Abstract: A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.

Abstract: An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.

Abstract: A computer readable storage medium has executable instructions to select a plurality of macroblocks in a video sequence to be coded as anchor macroblocks, the anchor macroblocks distributed across the video sequence and facilitating random access decoding of a portion of the video sequence. The video sequence is coded into a bit stream. Auxiliary information associated with the anchor macroblocks is generated. The auxiliary information associated with the anchor macroblocks is inserted in a supplementary section of the bit stream.

Abstract: A method for forming a final digital color image includes capturing an image using an image sensor having panchromatic pixels and color pixels corresponding to at least two color photoresponses; providing from the captured image a digital panchromatic image and an intermediate digital color image; and using the digital panchromatic image and the intermediate digital color image to provide the final digital color image.

Abstract: An imaging system and method for producing a digital image from pixel signals captured by a pixel array is disclosed. First pixel signals, generated during a first exposure period, are read out from a first group of pixels of the pixel array. The first group of pixels is reset after reading out the first pixel signals. Second pixel signals from the first group of pixel are read out after resetting the first group of pixels. The second pixel signals are generated during a second exposure period. Third pixel signals from a second group of pixels of the pixel array are read out. The third pixel signals are generated during a third exposure period that overlaps at least a portion of the first and second exposure periods. The first, second, and third pixel signals are used to produce the digital image.

Abstract: The invention provides a compact camera module. The compact camera module includes an image sensing device, a set of optical elements, and a zooming device. The set of optical elements connects to the image sensing device, and comprises a lens set. The zooming device connects to the set of optical elements for adjusting a distance between the lens set and the image sensing device. The zooming device directly electrically joins with the image sensing device.

Abstract: A method for designing an optical device which includes a lens and a microlens array is disclosed. A point spread function (PSF) of the lens including rotationally symmetrical aberration coefficients is formulated, wherein the PSF presents various spherical spot sizes. A virtual phase mask having phase coefficients is provided and the phase coefficients are added to the PSF of the lens, such that the various spherical spot sizes are homogenized. The virtual phase mask is transformed into a polynomial function comprising high and low order aberration coefficients. A surface contour of the lens is determined according to the rotationally symmetrical aberration coefficients and the low order aberration coefficients, and a sag height of each microlens in the microlens array is determined according to the high order aberration coefficients. An optical device using the design method is also disclosed.

Abstract: An electronic assembly for an image sensing device is disclosed, comprising an image sensing element, a lens set comprising a feet enclosing a cavity to receive the image sensing element and an opaque conductive layer disposed on at least a portion of a top side, a sidewall and a bottom side of the lens set, wherein the opaque conductive layer is electrically connected to a grounding layer to reduce electromagnetic interference (EMI) to the image sensing element.

Abstract: An image sensor includes a substrate having a plurality of photosensitive areas, a light shield positioned spanning the photosensitive areas in which light shield a plurality of apertures are formed, and a plurality of microlens each disposed centered on one of the apertures such that a focal point of the incident light through each microlens is substantially extended into the substrate to a point where a portion of the incident light directed onto the periphery of each microlens is blocked by a light shield.

Abstract: A multiplexed pixel display includes a plurality of pixel electrodes, a plurality of storage elements, a first voltage supply terminal, a second voltage supply terminal, a common electrode, and a plurality of multiplexers each selectively coupling an associated one of the pixel electrodes with one of the first voltage supply terminal and the second voltage supply terminal responsive to a value of a data bit stored in an associated one of said storage elements. A controller is configured to sequentially write each bit of multi-bit data words to the storage elements, and assert, while each bit is stored in the storage elements, a first predetermined voltage on the first voltage supply terminal, a second predetermined voltage on the second voltage supply terminal, and a third predetermined voltage on the common electrode, for a time dependent on the significance of the stored bit. Various alternate controllers facilitate the use of additional driving schemes.

Abstract: A camera unit is provided, including a camera lens and a macro lens coupled with the camera lens module along an optical axis. The macro lens comprises a plane substrate and a plano-convex lens structure formed on the plane substrate by wafer level processing, wherein the effective focal length of the macro lens is between 80-150 mm.

Abstract: A color image sensor is disclosed. The color image sensor includes a pixel array including a color filter array (“CFA”) overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first color filter elements contribute to a first color channel of the color image and the second color filter elements contribute to a second color channel of the color image. The color image sensor further includes a color combiner unit coupled to combine the first color channel with the second color channel to generate a third color channel of the color image based on the first and second color channels. An output port is coupled to the pixel array to output the color image having three color channels including the first, second, and third color channels.

Abstract: A novel method for driving a display includes the steps of defining a modulation period during which a particular intensity value is asserted on a pixel of the display, dividing the modulation period into a plurality of coequal time intervals, receiving a data word, which includes a plurality of equally-weighted bits and is indicative of an intensity value to be displayed by the pixel, updating a signal asserted on the pixel during each of a plurality of consecutive time intervals during a first portion of the modulation period, and updating the signal asserted on the pixel every mth time interval during a second portion of the modulation period, where m is equal to the weight of each of the equally-weighted bits. The data word can either be composed of two groups of equally-weighed bits, or a combination of binary bits and equally-weighted. The invention also includes a novel display driver for executing the driving methods.

Abstract: Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may have a width that is no more than 0.3 micrometers and a height that is at least 1.5 micrometers. A semiconductor material may be epitaxially grown around the narrow, tall dielectric isolation structures. Other methods and apparatus are also disclosed.

Abstract: A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

Abstract: The invention involves the integration of curved micro-mirrors over a photodiode active area (collection area) in a CMOS image sensor (CIS) process. The curved micro-mirrors reflect light that has passed through the collection area back into the photo diode. The curved micro-mirrors are best implemented in a backside illuminated device (BSI).