Abstract: Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor to the floating diffusion node.

Abstract: Systems and methods for processing a detected composite color image to form a processed composite color image includes the following, for each of a plurality of pixels in the image: (1) identifying a window of pixels in the image that surrounds the pixel, (2) calculating a weight factor coefficient for each detected color from detected color intensity values of the pixels that surround the pixel, (3) calculating raw color contributions corresponding to each nonselected color, (4) multiplying each of the detected color values of a selected color and the raw color contributions corresponding to the nonselected colors, with corresponding weight factor coefficients, to form weighted color contributions, and (5) summing the weighted color contributions to form a processed color intensity value for the pixel.

Abstract: A method of pre-processing a defocused image of an object includes applying an object-based sharpening filter on the defocused image to produce a sharper image; and quantizing the sharper image using block-wise quantization. A system for generating decoded text data from alphanumeric information printed upon an object includes a camera that obtains image data of the alphanumeric information. The system also includes a pre-processor that (a) performs block-wise quantization of the image data to form conditioned image data, and (b) performs optical character recognition on the conditioned image data to generate the decoded text data.

Abstract: A CMOS image sensor includes an image pixel array, a dark pixel array, data bit liens, reference bit lines, a driver, comparators, and analog-to-digital converter (“ADC”) circuits. The image pixel array generates analog image signals in response to incident light. The dark pixel array generates analog black reference signals for analog black level calibration of the analog image signals. In one embodiment, the data bit lines each coupled to a different column of image pixels of the image pixel array and the reference bit lines each coupled to a different column of black reference pixels within the dark pixel array. The driver is coupled to the reference bit lines to drive an analog black reference signal. The comparators each couple to one of the data bit lines and each coupled to an output of the driver and offset the analog image signals with the analog black reference signals in an analog domain. The ADC circuits each coupled to an output of a comparator.

Abstract: An image sensing systems supports independently setting sensor parameters in two or more different regions of interest. In one implementation resolution, exposure time, and gain are independently selectable in each region of interest. Independently setting exposure time and gain in different regions of interest improves image recognition when there are large differences in the illumination of objects within an image. Independently setting resolution permits the resolution to be selectively increased in regions of interest requiring high resolution in order to reduce the pixel data bandwidth and processing requirements.

Abstract: A method of fabricating a backside illuminated imaging sensor that includes a device layer, a metal stack, and an opening is disclosed. The device layer has an imaging array formed in a front side of the device layer, where the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer and includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The method includes depositing a film on the back side of the device layer and within the opening, then etching the film to form a frame within the opening to structurally reinforce the metal pad.

Abstract: In an embodiment, a method forms a lens with wavefront coding. The method includes positioning a lens in a mold; and curing material onto a surface of the lens to form an aspheric surface of the lens with wavefront coding. In another embodiment, a system for fabricating and evaluating a modified lens includes a collar for holding an initial lens, the initial lens having a front surface and a rear surface, a pin having a surface for molding a moldable material onto the front surface of the initial lens, to form the modified lens, an image forming arrangement; and a test object to be imaged by the modified lens and the image forming arrangement.

Abstract: An image sensor includes a pixel array, a bit line, a supplemental capacitance node line, and a control circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells different from the first group. The control circuit is coupled to the supplemental capacitance node line to selectively increase the potential at the FD node of each of the pixel cells of the second group by selectively asserting a FD boost signal on the supplemental capacitance node line.

Abstract: Systems and methods include imaging optics having one or more optical elements for modifying a wavefront of electromagnetic energy incident thereon. The wavefront, modified by the optical elements, exhibits a non-monotonic wavefront phase profile. The imaging optics are characterized by a modulation transfer function that is substantially invariant over a range of misfocus. The system optionally includes a detector for receiving the electromagnetic energy from the imaging optics. A method of maintaining modulation transfer invariance over a range of misfocus in an optical imaging system includes modifying a wavefront of electromagnetic energy incident to the optical imaging system such that the wavefront exhibits a non-monotonic wavefront phase profile and a substantially invariant modulation transfer function over the range of misfocus.

Abstract: A detector assembly is configured for characterizing electromagnetic energy that propagates along a light path. At least a component of the electromagnetic energy carries electromagnetic energy information along the light path. The detector assembly includes a first detector array arranged along the light path and having photosensitive elements aligned to receive at least some of the electromagnetic energy, including the component. The photosensitive elements selectively absorb a first portion of the component and produce a first set of electrical image data, based at least in part on the electomagnetic energy information, in response to the component. At least some of the photosensitive elements are at least partially transparent so that they selectively pass a second portion of the component to continue along the light path.

Abstract: Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.

Abstract: An imaging system includes an image sensor and an optical filter. The image sensor captures image data in response to incident light. The optical filter filters the light and includes a dual window transmission spectrum. The dual window transmission spectrum includes a first transmission window having a first pass band aligned to pass visible light and a second transmission window having a second pass band overlapping with an absorption band of infrared light in Earth's atmosphere.

Abstract: A pixel array in an image sensor includes multiple pixels arranged in rows and columns with each column of pixels electrically connected to a column output line. A sample and hold circuit is electrically connected to each column output line. In one embodiment in accordance with the invention, each sample and hold circuit includes one capacitor for receiving and storing a signal voltage and a second capacitor for receiving and storing a reset voltage. The sample and hold circuits are divided into distinct groups, with each group including two or more sample and hold circuits. A pair of buffers is electrically connected to each distinct group. One global bus receives the signal voltages from at least a portion of buffers and another global bus receives the reset voltages from at least a portion of the other buffers. The global buses can include one or more signal lines.

Abstract: Embodiments of an apparatus comprising a pixel array comprising a plurality of macropixels. Each macropixel includes a pair of first pixels each including a color filter for a first color, the first color being one to which pixels are most sensitive, a second pixel including a color filter for a second color, the second color being one to which the pixels are least sensitive and a third pixel including a color filter for a third color, the third color being one to which pixels have a sensitivity between the least sensitive and the most sensitive, wherein the first pixels each occupy a greater proportion of the light-collection area of the macropixel than either the second pixel or the third pixel. Corresponding process and system embodiments are disclosed and claimed.

Abstract: A CMOS image sensor includes an image pixel array, a dark pixel array, data bit liens, reference bit lines, a driver, comparators, and analog-to-digital converter (“ADC”) circuits. The image pixel array generates analog image signals in response to incident light. The dark pixel array generates analog black reference signals for analog black level calibration of the analog image signals. In one embodiment, the data bit lines each coupled to a different column of image pixels of the image pixel array and the reference bit lines each coupled to a different column of black reference pixels within the dark pixel array. The driver is coupled to the reference bit lines to drive an analog black reference signal. The comparators each couple to one of the data bit lines and each coupled to an output of the driver and offset the analog image signals with the analog black reference signals in an analog domain. The ADC circuits each coupled to an output of a comparator.

Abstract: A method for designing a first optical filter, exhibiting a first filter performance satisfying a first preset criterion, and a second optical filter, exhibiting a second filter performance satisfying a second preset criterion, includes providing initial first and second filter designs for the first and second optical filters, respectively, as first and second ordered stacks of layers, respectively. A pair of layers, including a first layer, characterized by a first thickness, and a second layer, characterized by a second thickness, is selected from the first and second ordered stacks of layers. The first thickness is constrained to a first constrained thickness that is a positive integer multiple of the second thickness to yield a constrained first filter design. A predicted performance of the constrained first filter design is determined and compared with the first preset criterion for one of accepting and rejecting the constrained first filter design.

Abstract: An image sensor includes an array of pixels comprising a plurality of kernels that repeat periodically and each kernel includes n photosensitive regions for collecting charge in response to light, n is equal to or greater than 2; and a transparent layer spanning the photosensitive regions having n optical paths, at least two of which are different, wherein each optical path directs light of a predetermined spectral band into specific photosensitive regions.

Abstract: An image sensor includes a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is connected to an output of the horizontal shift register. A charge directing switch is electrically connected to the non-destructive sense node. The charge directing switch includes two outputs. A charge multiplying horizontal shift register is electrically connected to one output of the charge directing switch. A discharging element is connected to the other output of the charge directing switch.

Abstract: An image sensor in accordance with embodiments disclosed herein includes an array of imaging pixels, an insulator layer, and a plurality of metal reflectors. The array of imaging pixels are disposed within a semiconductor layer, where each imaging pixel in the array of imaging pixels includes a photosensitive element configured to receive light from a backside of the image sensor. The insulator layer is disposed on a frontside of the semiconductor layer and the plurality of metal reflectors are disposed within the insulator layer to reflect the light to a respective photosensitive element. A width of each of the plurality of metal reflectors is equal to a width of a metal reflector at the center of the array multiplied by a scaling factor, where the scaling factor is dependent on a distance of the metal reflector from the center of the array.

Abstract: An optical lens module is provided, including a first lens, a second lens, a third lens, and an aperture stop formed in the first lens by wafer level processing. The first lens, the second lens, and the third lens are sequentially arranged from an object side to an image side along an optical axis of the optical lens module. The first lens has a convex surface and a concave surface, respectively, on an object side and an image side. The second lens has a concave surface and a convex surface, respectively, on the object side and the image side. The third lens has a convex peripheral portion on the image side, wherein the convex peripheral portion forms a surface with a concave center on the image side, and the surface has an inflection point.