Abstract: Systems and methods for generating images of an object having a known object velocity include imaging electromagnetic radiation from the object onto a sensor array of an imaging system, adjusting at least one of a shutter rate and a shutter direction of the imaging system in accordance with an image velocity of the image across the sensor array, and sampling output of the sensor array in accordance with the shutter rate and the shutter direction to generate the images. Systems and methods for generating images of an object moving through a scene include a first imaging system generating image data samples of the scene, a post processing system that analyzes the samples to determine when the object is present in the scene, and one or more second imaging systems triggered by the post processing system to generate one or more second image data samples of the object.

Abstract: A method and system for facilitating focusing of a camera module are disclosed. The camera module includes an image sensor, a lens cube, a barrel and an adjustable member. An adjustable member can be configured to fine-tune the focal length with respect to an image sensor, so that a lens cube with a shorter or longer focal length can be corrected and integrated into the camera module.

Abstract: A method for forming an image, implemented at least in part by a data processing apparatus, by obtaining a first image of a scene from a first subset of pixels in an image sensor array at a first f/# setting, adjusting the imaging optics that obtain light from the scene at a second f/# setting, obtaining a second image of the scene from a second subset of pixels in the image sensor array, and forming a composite image by combining image data from at least the first and second images.

Abstract: A multilayer optical device includes an arrangement, on a substrate, of a first layer, a second layer, and a space therebetween. The second layer is a thin-film. The arrangement of the first and second layers and the space therebetween produces transmitted, reflected, or dispersed spectrally modified electromagnetic energy from electromagnetic energy incident upon the arrangement. An optical function of the device is dependent at least in part on interference effects. An optical detector system includes a similar multilayer optical device. The space within the device is in fluid communication with structures for receiving a fluid such that the device operates in a first or second mode depending on absence or presence of the fluid within the space. The system includes a detector for receiving the modified electromagnetic energy, and a controller in fluid communication with the space that establishes the absence or presence of the fluid in the space.

Abstract: An image sensor pixel includes a photosensitive element having a first doping type disposed in semiconductor material. A deep extension having the first doping type is disposed beneath and overlapping the photosensitive element in the semiconductor material. A floating diffusion is disposed in the semiconductor material. A transfer gate is disposed over a gate oxide that is disposed over the semiconductor material. The transfer gate is disposed between the photosensitive element and the floating diffusion. The photosensitive element and the deep extension are stacked in the semiconductor material in a “U” shape extending from under the transfer gate.

Abstract: Method and apparatus for achieving high precision sampling recovery at a relatively low sampling rate. The apparatus includes: a sampling rate conversion module for converting the sampling rate of a received signal to an required sampling rate; a time domain impulse response estimation module for estimating a time domain impulse response of a transmission channel according to data output by the sampling rate conversion module; a high order interpolation module for performing high order interpolation to one or more selected transmission paths after obtaining the time domain impulse response; and a sampling error information extraction module for extracting sampling phase offset information and sampling frequency offset information based on interpolation results and drifts in two consecutive interpolation results of the high order interpolation step. The apparatus is capable of realizing fast high precision locking of sampling phase and correction of sampling frequency offset at a relatively low sampling rate.

Abstract: An image sensor includes a first imaging pixel for a first color having a photosensitive region disposed within a substrate of the image sensor and a second imaging pixel for a second color that is different from the first color having a photosensitive region disposed within the substrate. A refraction element disposed adjacent to the substrate, so that the refraction element refracts light of the first color to the photosensitive region of the first imaging pixel and refracts light of the second color to the photosensitive region of the second imaging pixel.

Abstract: A method of forming trenches in a semiconductor device includes forming an etchant barrier layer above a first portion of a semiconductor layer. A first trench is etched in a second portion of the semiconductor layer using a first etchant. The second portion of the semiconductor layer is not disposed underneath the etchant barrier layer. The etchant barrier layer is etched through using a second etchant that does not substantially etch the semiconductor layer. A second trench is etched in the first portion of the semiconductor layer using a third etchant. The third etchant also extends a depth of the first trench.

Abstract: An arithmetic counter circuit for high performance CMOS image sensors includes a plurality of flip-flops of a plurality of counter stages and a plurality of multiplexers of the plurality of counter stages being coupled to the plurality of flip-flops. Each of the plurality of multiplexers coupled to receive control signals including at least one of a toggle signal, a keep signal, a shift enable signal, or a mode signal. The control signals select the output of each of the plurality of multiplexers. Each of the plurality of flip-flops is coupled to be in one of a toggle state, a keep state, a reset state or a set state based on inputs received from the plurality of multiplexers. Other embodiments are described.

Abstract: Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.

Abstract: An apparatus includes a first photodetector array including visible light photodetectors disposed in semiconductor material to detect visible light included in light incident upon the semiconductor material. The apparatus also includes a second photodetector array including time of flight (“TOF”) photodetectors disposed in the semiconductor material to capture TOF data from reflected light reflected from an object included in the light incident upon the semiconductor material. The reflected light reflected from the object is directed to the TOF photodetectors along an optical path through the visible light photodetectors and through a thickness of the semiconductor material. The visible light photodetectors of the first photodetector array are disposed in the semiconductor material along the optical path between the object and the TOF photodetectors of the second photodetector array.

Abstract: Low-complexity channel noise reduction method and apparatus for multi-carrier mode in wireless LANs are disclosed. The method selects an optimal frequency domain channel impulse response by using a known long training sequence and a highly protected signaling sequence of the multi-carrier mode frame structure to ensure the receiver to have a good operation threshold in different time-delay spread environments at the cost of a low complexity. Instead of detecting time domain channel responses, the method directly performs noise reduction to a noise-containing frequency domain channel by using preset Wiener filtering coefficients to obtain multiple frequency domain channel responses, among which there must be a relatively optimal frequency domain channel response. The relatively optimal frequency domain channel response can be selected by using the highly protected signaling sequence to calculate the signaling frequency domain channel.

Abstract: In an embodiment, a low height imaging system has: one or more optical channels and a detector array, each of the optical channels (a) associated with at least one detector of the array, (b) having one or more optical components and a restrictive ray corrector, and (c) configured to direct steeper incident angle field rays onto the at least one detector.

Abstract: Disclosed is a method for forming an image sensor device. First, a lens is provided, and a first sacrificial element is then formed on the lens. Subsequently, an electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and the electromagnetic interference layer thereon are removed to form an electromagnetic interference pattern having an opening exposing a selected portion of the lens. A second sacrificial element is formed in the opening to cover a center region of the selected portion of the lens, while a peripheral region of the selected portion of the lens remains exposed. Next, a light-shielding layer is formed on the electromagnetic interference pattern, the second sacrificial element, and the peripheral region of the selected portion of the lens. Thereafter, the second sacrificial element and the light-shielding pattern thereon are removed to expose the center region of the selected portion of the lens as a light transmitting region.

Abstract: A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.

Abstract: An image sensor pixel includes a semiconductor layer, a photosensitive region to accumulate photo-generated charge, a floating node, a trench, and an entrenched transfer gate. The photosensitive region and the trench are disposed within the semiconductor layer. The trench extends into the semiconductor layer between the photosensitive region and the floating node and the entrenched transfer gate is disposed within the trench to control transfer of the photo-generated charge from the photosensitive region to the floating node.

Abstract: Embodiments of an apparatus comprising a CMOS image sensor including a pixel array formed in a substrate and a light guide formed on the substrate to receive light traveling in a plane parallel to a plane of the pixel array and incident on the edge of the image sensor and to re-direct the incident light into at least one pixel of the pixel array. Embodiments of an optical touch-screen imager comprising a substantially planar touch area and a detector positioned adjacent to the touch area, the detector comprising a CMOS image sensor as described above.

Abstract: A method of one aspect may include receiving an encapsulated image acquisition device having an internal memory. The internal memory may store images acquired by the encapsulated image acquisition device. The images may be transferred from the internal memory to an external memory that is external to the encapsulated image acquisition device. An image analysis station may be selected from among a plurality of image analysis stations to analyze the images. The images may be analyzed with the selected image analysis station. Other methods, systems, and kits are also disclosed.

Abstract: A backside illuminated image sensor includes a substrate layer having a frontside and a backside. An array of photosensitive pixels is disposed within the substrate layer and is sensitive to light incident through the backside of the substrate layer. A metal grid is disposed over the backside of the substrate layer. The metal grid surrounds each of the photosensitive pixels and defines optical apertures for receiving the light into the photosensitive pixels through the backside. The metal grid includes intersecting wires each having a triangular cross-section. A material layer surrounds the metal grid.

Abstract: An image sensor includes a two-dimensional array of pixels having multiple column outputs and an output circuit connected to each column output. Each output circuit is configured to operate concurrent sample and read operations. An analog front end (AFE) circuit processes pixel data output from the output circuits and an AFE clock controller transmits an AFE clocking signal to the AFE circuit to effect processing of the pixel data. A timing generator outputs a column address sequence that is received by a column decoder. During one or more sample operations the AFE clock controller suspends the output of the AFE clocking signal and the timing generator suspends the output of the column address sequence during the sample operation. The output of the AFE clocking signal and the column address sequence resume at the end of the sample operation.