Patents Assigned to OSRAM OLED GmbH
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Patent number: 11271140Abstract: A method for manufacturing a plurality of surface mounted optoelectronic devices and a surface mounted optoelectronic device are disclosed. In an embodiment, a surface mounted optoelectronic device includes a transparent base body having a mounting rear side, a radiation exit side opposite the mounting rear side, and mounting side surfaces which are each disposed transversely to the radiation exit side, a semiconductor layer sequence disposed laterally to at least one mounting side surface and a terminal contact extending from the at least one mounting side surface to the mounting rear side, wherein the semiconductor layer sequence includes an active region configured to emit radiation so that the radiation decouples from the surface mounted optoelectronic device via the radiation exit side of the base body.Type: GrantFiled: March 20, 2018Date of Patent: March 8, 2022Assignee: OSRAM OLED GMBHInventor: Siegfried Herrmann
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Patent number: 11264550Abstract: A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.Type: GrantFiled: April 18, 2018Date of Patent: March 1, 2022Assignee: OSRAM OLED GMBHInventors: Martin Rudolf Behringer, Alexander F. Pfeuffer, Andreas Plößl, Georg Bogner, Berthold Hahn, Frank Singer
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Patent number: 11258020Abstract: A method produces cross-linked hole-conducting electric layers by converting functionalized p-dopants. The functionalized p-dopants are organic metal complexes containing at least one central atom and organic ligands, wherein the central atom is selected from a metal of the groups 6-15 of the periodic table, and at least one of the organic ligands is selected from the following formulas I-V, in which E independently of one another is oxygen, sulfur, selenium, or N(E1)x, and each Rv has at least one functionalizing group selected from the group RF including —OH, —COOH, —NH2, —NHR?, halogen, C2-C40-alkenyl, -dienyl, -alkinyl, -alkenyloxy, -dienyloxy, -alkinyloxy, acrylic acid, oxetan, oxiran, silane, acrylic acid, anhydride, and cyclobutane or consists of the groups, and G=C(RF)uHvFw where u+v+w=3 and n=1-4.Type: GrantFiled: June 14, 2017Date of Patent: February 22, 2022Assignees: OSRAM OLED GmbH, MERCK Patent GmbHInventors: Günter Schmid, Florian Kessler, Katja Stegmaier, Fabrice Eckes, Holger Heil, Beate Burkhart, Henning Seim
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Patent number: 11257424Abstract: A display device is disclosed. In an embodiment a display device includes a plurality of image points, each image point comprising at least one active region configured to generate first radiation, a carrier including a drive circuit for the plurality of image points and a detector assigned to at least some image points, the detector configured to receive second radiation, wherein at least some image points are configured to act either as an emitter or as a detector during operation of the display device.Type: GrantFiled: February 19, 2019Date of Patent: February 22, 2022Assignee: OSRAM OLED GMBHInventors: Thorsten Frank Baumheinrich, Hubert Halbritter
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Patent number: 11257705Abstract: A method of selecting semiconductor chips includes: A) providing the semiconductor chips in a composite, B) producing a cohesive, mechanical first connection between the semiconductor chips and a carrier film, C) singulating the semiconductor chips, wherein the carrier film mechanically connects the semiconductor chips to one another after singulation, D) selectively weakening the first connection between some singulated semiconductor chips and the carrier film, depending on electro-optical and/or electrical properties of the semiconductor chips, and E) removing the semiconductor chips whose first connection is selectively weakened from the carrier film.Type: GrantFiled: January 24, 2018Date of Patent: February 22, 2022Assignee: OSRAM OLED GmbHInventors: Daniel Richter, Gunnar Petersen, Konrad Wagner
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Patent number: 11251347Abstract: A semiconductor light source includes at least one first emission unit, at least one second emission unit, and an optics, wherein the optical system has an inner region that converges radiation from the first emission unit, the optical system has an outer region that expands radiation from the second emission unit, a first light emission region of the inner region completely covers the first emission unit when viewed in plan view, and at least partially covers the second emission unit, a second light emission region of the outer region is partially or completely beside the second emission unit when viewed in plan view, and the inner region and the outer region have differently shaped light entry regions.Type: GrantFiled: May 30, 2018Date of Patent: February 15, 2022Assignee: OSRAM OLED GmbHInventors: Ulrich Streppel, Désirée Queren
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Patent number: 11251081Abstract: The method of manufacturing a plurality of semiconductor chips (100) comprises a step A) of providing a semiconductor substrate (1) having a plurality of integrated electronic circuits (2) on a top side (10) thereof. In a step B), a sacrificial layer (3) is applied on one side of the semiconductor substrate. In a step C), holes (30) are introduced in the sacrificial layer so that at least one hole is formed above each electronic circuit. In a step D), the semiconductor substrate is adhered to a carrier (5) with the sacrificial layer at the front, an adhesive layer (4) being used between the sacrificial layer and the carrier, and the adhesive layer filling the holes so that holding elements (40) from the adhesive layer are formed in the holes. In a step E) the semiconductor substrate is thinned.Type: GrantFiled: October 25, 2018Date of Patent: February 15, 2022Assignee: OSRAM OLED GMBHInventors: Thomas Schwarz, Lutz Höppel, Thorsten Frank Baumheinrich, Jens Richter
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Patent number: 11251587Abstract: A laser diode and a method for manufacturing a laser diode are disclosed. In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, and wherein the optical element and the semiconductor laser are cohesively connected to each other.Type: GrantFiled: May 30, 2018Date of Patent: February 15, 2022Assignee: OSRAM OLED GMBHInventors: Frank Singer, Hubert Halbritter
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Patent number: 11245246Abstract: A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, and at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element.Type: GrantFiled: May 31, 2017Date of Patent: February 8, 2022Assignee: OSRAM OLED GmbHInventor: Wolfgang Reill
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Patent number: 11239396Abstract: A light-emitting device and a method for manufacturing a light-emitting device are disclosed. In an embodiment a light-emitting device includes a light-emitting semiconductor chip with a light-outcoupling surface surrounded laterally by a first reflective material in a form-locking manner, a foil element on the light-outcoupling surface, an optical element on the foil element laterally surrounded by a second reflective material in a form-locking manner and a gas-filled gap located at least in a partial region between the foil element and the optical element.Type: GrantFiled: August 8, 2018Date of Patent: February 1, 2022Assignee: OSRAM OLED GMBHInventors: Luca Haiberger, Sam Chou
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Patent number: 11239402Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed.Type: GrantFiled: January 24, 2019Date of Patent: February 1, 2022Assignee: OSRAM OLED GMBHInventors: Simeon Katz, Markus Maute
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Patent number: 11239392Abstract: An optoelectronic semiconductor chip may include a semiconductor layer sequence having at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. A p-terminal contact may be electrically contacted to the p-doped semiconductor layer. An n-terminal contact may be electrically contacted to the n-doped semiconductor layer. The n-terminal contact may be arranged in direct contact with the p-doped semiconductor layer at least in regions.Type: GrantFiled: July 16, 2018Date of Patent: February 1, 2022Assignee: OSRAM OLED GMBHInventors: Fabian Kopp, Attila Molnar
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Patent number: 11239398Abstract: An optoelectronic semiconductor component may include at least one optoelectronic semiconductor chip, a reflector, a lens, and a connecting layer. The reflector may have a reflector recess where the semiconductor chip may be arranged. The lens may be fully located in the reflector recess, and the lens may have a lens recess. The connecting layer may fasten the lens on the reflector. The lens may have a lens outer side facing toward a reflector inner wall of the reflector recess. A gap may be between the reflector and the lens, and the gap may be filled only partially with the connecting layer. The semiconductor chip may not touch the lens. The optoelectronic semiconductor component may be incorporated into a biometric sensor.Type: GrantFiled: July 26, 2018Date of Patent: February 1, 2022Assignee: OSRAM OLED GMBHInventors: Thomas Kippes, Claus Jaeger, Jason Rajakumaran
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Patent number: 11233089Abstract: An optoelectronic component includes a light emitter including a multiplicity of segments, wherein each segment of the light emitter includes a multiplicity of image points configured to emit light, and an optical element configured to image light emitted by the light emitter into a target region, light emitted by the individual segments of the light emitter is superimposed in the target region, the optical element is subdivided into a number of segments corresponding to a number of segments of the light emitter, each segment of the optical element is respectively arranged over a segment of the light emitter, and the segments of the optical element are respectively configured as double-sided aspherical lenses.Type: GrantFiled: December 18, 2017Date of Patent: January 25, 2022Assignee: OSRAM OLED GmbHInventors: Ulrich Streppel, Désirée Queren
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Patent number: 11230664Abstract: A dimmable light source for emitting white overall radiation may include a dimmer and a light-emitting diode. The dimmer may vary a current intensity of a current for operating the light-emitting diode during the operation of the light source. The LED may include a semiconductor layer sequence to emit primary radiation, and the LED may further include a conversion element configured to at least partially convert the primary radiation into secondary radiation having a first emission band with a first emission maximum ranging from 400 nm to 500 nm and a second emission band with a second emission maximum ranging from 510 nm to 700 nm. A relative intensity of the first emission band may reduce with decreasing current intensity of the current for operating the LED, and a relative intensity of the second emission band may increase with decreasing current intensity of the current for operating the LED.Type: GrantFiled: February 12, 2018Date of Patent: January 25, 2022Assignee: OSRAM OLED GmbHInventors: Dominik Baumann, Stefan Lange
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Patent number: 11233373Abstract: A radiation-emitting semiconductor arrangement includes at least one semiconductor body having an active region that generates a primary radiation, and includes a radiation conversion element, wherein the radiation conversion element converts the primary radiation at least partially into a secondary radiation during operation of the semiconductor arrangement, the radiation conversion element emits the secondary radiation at a narrow angle, the radiation conversion element emits the secondary radiation into a projected spatial angle of not more than ?/5, and the semiconductor arrangement includes an optical deflector movable during operation of the semiconductor arrangement.Type: GrantFiled: January 18, 2018Date of Patent: January 25, 2022Assignee: OSRAM OLED GmbHInventors: Peter Brick, Hubert Halbritter
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Publication number: 20220020899Abstract: A light-emitting component a first layer stack configured to generate light, at least one additional layer stack configured to generate light, where each of the first layer stack and the at least one additional layer stack are separately drivable from one another and where an auxiliary structure is arranged between the first layer stacks and the at least one additional layer stacks.Type: ApplicationFiled: September 28, 2021Publication date: January 20, 2022Applicant: OSRAM OLED GmbHInventors: Daniel Riedel, Andreas Rausch, Ulrich Niedermeier
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Patent number: 11228161Abstract: A semiconductor laser array may include a plurality of semiconductor lasers and a common substrate configured as a common anode of said plurality of semiconductor lasers. Each semiconductor laser may have a pn junction region between the common anode and a cathode contact layer. The pn junction region may include a p-doped layer and an n-doped layer. The p-doped layer of the pn junction region may face the substrate. The semiconductor laser array circuit arrangement may include a semiconductor laser array, each laser may be controlled by a driver with an n-MOSFET.Type: GrantFiled: October 25, 2018Date of Patent: January 18, 2022Assignee: OSRAM OLED GMBHInventors: Martin Mueller, Guenther Groenninger
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Patent number: 11227977Abstract: An optoelectronic semiconductor device includes a semiconductor layer sequence having an active zone that generates radiation, a first electrode that supplies current directly to a bottom side of the semiconductor layer sequence, and a second electrode that supplies current and extends from the bottom side to a top side of the semiconductor layer sequence opposite the bottom side, wherein the second electrode includes at least one current distribution structure on the top side, and the current distribution structure is impermeable to the generated radiation and electrically connected in a plurality of contact regions to at least one further component of the second electrode and configured for lateral current distribution starting from the contact regions.Type: GrantFiled: December 19, 2018Date of Patent: January 18, 2022Assignee: OSRAM OLED GmbHInventor: Benjamin Michaelis
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Patent number: 11222999Abstract: A device with a lead frame, a moulded body and a plurality of semiconductor chips configured to generate radiation is specified, wherein the lead frame has two connection parts for external electrical contacting of the device; the moulded body is formed to the lead frame; the moulded body is transmissive to the radiation generated during operation of the device; and the semiconductor chips are arranged on a front-side of the moulded body and each of the semiconductor chips overlap with the device with the moulded body in plan view of the device. Furthermore, a method for producing devices is specified.Type: GrantFiled: September 21, 2018Date of Patent: January 11, 2022Assignee: OSRAM OLED GmbHInventors: Reiner Windisch, Florian Bösl, Andreas Dobner, Matthias Sperl
